1. Engineering DyCrO3 ceramics toward room-temperature high-κ dielectric applications.
- Author
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Mishra, Suryakanta and Choudhury, Debraj
- Subjects
- *
DIELECTRIC relaxation , *CERAMIC engineering , *DIELECTRIC materials , *TRANSISTORS , *DIELECTRICS , *DIELECTRIC loss - Abstract
The search for a high- κ dielectric material that combines a high dielectric constant (ϵ ′ ) and low dielectric loss is very crucial because of its widespread use in gate dielectrics to avoid the leakage current that arises due to continued miniaturization of present SiO 2 -based metal-oxide semiconductor field-effect transistor devices. RCrO 3 (R is a rare-earth ion) materials have been at the center of interest because of their intriguing ferroelectric and magnetic properties, as well as their room-temperature colossal dielectric constant (CDC) values. Although CDC (ϵ ′ ∼ 10 4) in RCrO 3 materials is quite common, it is unsuitable for device applications since it is associated with a larger dielectric loss value (tan δ ∼ 7 at 11 kHz). Here we have focused on polycrystalline DyCrO 3 , prepared using multiple synthesis techniques, and thoroughly investigated the origin and tuning of the various dielectric relaxations that give rise to CDC and large dielectric loss values. A clear understanding of the origin of dielectric relaxations enables us to design a specially synthesized DyCrO 3 (SPS-DCO) in which the extrinsic dielectric relaxations driven large dielectric loss values can be completely suppressed and which is found to be associated with optimized high- κ dielectric properties [ ϵ ′ ∼ 130 , tan δ ∼ 0.06 , and temperature coefficient of dielectric constant (TC ϵ) ∼ 2280 ppm/K at 11 kHz, 300 K]. The only remaining intrinsic Debye-type dielectric relaxation in SPS-DCO arises due to electric-field-assisted charge hopping among various valences of Cr (investigated using x-ray photoelectron spectroscopy) that presently limits the lowest attainable loss value. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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