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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. We propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC) [1]. The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.

Experimenta data

Experimental data and calculations.

Color centers in silicon carbide has been widely studied in view of the promising near-infrared emission near the low-loss telecom wavelengths as well as the maturity of semiconductor technology of silicon carbide material. Recently, there is an urgent need to generate color centers in predetermined location so as to integrate with photonic cavities of waveguides. In this paper, we report an experimentally demonstration of the generation of VSi, CSiVC, and NCVSi color centers in 4H-SiC using helium ion microscope in 5×5 µm areas with subsequent annealing treatment. Combined with transmission electron microscopy (TEM), photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and Raman stress analysis, the evolution and distribution of color centers were thoroughly investigated. Cross-sectional TEM revealed the presence of helium bubbles in center of the implanted region with high doses which account for the observed quench of PL emission in center of the implanted regions in both PL and CL measurements. PL spectra from the virgin, implanted and annealed samples proved the appearance of VSi after implantation and the transformation from VSi to CSiVC and NCVSi centers after annealing at 1000 ℃. Moreover, as the increase of the implantation dose, the area of NCVSi centers increases whereas that of CSiVC decreases, which implied a competitive relationship between the formation of CSiVC and NCVSi defects. The comparison between stress distribution and CSiVC defect distribution illustrated that CSiVC centers predominantly distributed around the surface rupture region after thermal annealing where significant stress repair occurred. The results suggest that focused helium ion implantation holds promise for the precise coupling of VSi, CSiVC and NCVSi centers in predefined location in integrated photonics applications.

There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.

Experimental data in OriginPro

Zunächst stelle ich die Grundlagen der Quantenmechanik vor. Dann beschreibe ich das Funktionsprinzip von Qubits. Danach stelle ich Beispiele für Quantenprogrammierung vor. Schließlich diskutiere ich mögliche Anwendungen für Quantentechnologien.

The integration of heterogeneous modular units for building large-scale quantum networks requires engineering mechanisms that allow a suitable transduction of quantum information. Magnon-based transducers are especially attractive due to their wide range of interactions and rich nonlinear dynamics, but most of the work to date has focused on linear magnon transduction in the traditional system composed of yttrium iron garnet and diamond, two materials with difficult integrability into wafer-scale quantum circuits. In this work, we present a different approach by utilizing wafer-compatible materials to engineer a hybrid transducer that exploits magnon nonlinearities in a magnetic microdisc to address quantum spin defects in silicon carbide. The resulting interaction scheme points to the unique transduction behavior that can be obtained when complementing quantum systems with nonlinear magnonics.

The file "figures.hdf5" contains all numbers plotted in the figures of the main manuscript. Each entry in the first hierarchy level of the file, e.g. "Figure 2a", corresponds to one subfigure. Each entry in the second hierarchy level (if existent) corresponds to one of the curve/subset of the the respective figure, e.g. if curves for multiple fluences are plotted. The innermost hierarchy level contains the data arrays. The dataset name corresponds to the axis label and units. The file "analyzed.hdf5" contains frequencies, quality factors, stress and Young's modulus fit results for each measured nanostring device on each measured sample. The first hierarchy level represents the sample (A or B). The second hierarchy level represents the accumulated implantation fluence that the sample has seen before the respective measurements. The third hierarchy level represents the write field, i.e. string array index, on the chip (0-3) and the fourth hierarchy level represents the string length within the write field. Each length exists exactly once in each write field. The innermost hierarchy level contains arrays of mode number, frequency, quality factor and "raw data indices" (see next paragraph) representing each measured resonance. The fields Young's modulus and pre-stress are scalars containing the respective fit result and its uncertainty. The file "raw.hdf5" finally contains all raw spectra. The first hierarchy level corresponds to unique indices of the respective measurement. This is intended as a look up table for the "raw data indices" of the "analyzed.hdf5" file. Using the index found in the "analyzed.hdf5", one can obtain the raw frequency sweep data and metadata. The file "srim-VACANCY.txt" is the vacancy output file of the SRIM simulation discussed in the main manuscript.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many approaches lack the required spatial placement accuracy and Si technology compatibility required for many of the envisioned applications. Here, we present a method to place single or few SPEs emitting in the telecom O-band1. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit for which this work lays the foundations. To achieve our goal, we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabrication methods have been irradiated with Si++ 40 keV ions in a spot pattern of 6 to 500 ions per spot. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom with a zero phonon lines (ZPL) at 1278 nm have been created in carbon rich SOI wafers. In ultra clean SOI wafers W-centers, a tri-interstitial Si complex has been created with a ZPL at 1218 nm. The achieved lateral SPE placement accuracy is below 50 nm in both cases and the success rate of SPE formation is more than 50%. Finally, we give an overview on possible other applications and give an outlook on future projects and instrumentation developments. 1Hollenbach, M., Klingner, N., Jagtap, N.S. et al. Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nature Communications 13, 7683 (2022). https://doi.org/10.1038/s41467-022-35051-5

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many approaches lack the required spatial placement accuracy and Si technology compatibility required for many of the envisioned applications. Here, we present a method to place single or few SPEs emitting in the telecom O-band1. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit for which this work lays the foundations. To achieve our goal, we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabrication methods have been irradiated with Si++ 40 keV ions in a spot pattern of 6 to 500 ions per spot. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom with a zero phonon lines (ZPL) at 1278 nm have been created in carbon rich SOI wafers. In ultra clean SOI wafers W-centers, a tri-interstitial Si complex has been created with a ZPL at 1218 nm. The achieved lateral SPE placement accuracy is below 50 nm in both cases and the success rate of SPE formation is more than 50%. Finally, we give an overview on possible other applications and give an outlook on future projects and instrumentation developments. 1Hollenbach, M., Klingner, N., Jagtap, N.S. et al. Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nature Communications 13, 7683 (2022). https://doi.org/10.1038/s41467-022-35051-5

Single photon emitters (SPE) are the starting point and foundation for future photonic quantum technologies. We present the laterally controlled fabrication of single G and W centers in silicon that emit in the telecom O-band. We utilized home built gold-silicon liquid metal alloy ion sources (LMAIS) in a focused ion beam (FIB) system to perform mask-free implantation of 40 keV Si ions from 6 to 500 ions per spot. Analysis and confirmation of SPEs has been done in a home-build cryo-photoluminescence setup. We will demonstrate a success rate of more than 50% and upscaling to wafer-scale. We will also provide an insight and overview on the LMAIS technology and an outlook on other potential applications of FIB implantation.

The long-lived and optically addressable spin states of silicon vacancies (VSi) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has been elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both V1 and V2 centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.

Negatively-charged boron vacancy centers hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors of temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.

Nonlinear phenomena in the THz spectral domain are important for the understanding of optoelectronic properties of quantum systems and provide a basis for modern information technologies. Here, we report a giant THz nonlinearity in high-mobility 2D topological insulators based on HgTe quantum wells, which manifests itself in a highly efficient third harmonic generation. We observe a third harmonic THz susceptibility several times higher than in bare graphene and many orders of magnitude higher than in trivial quantum well structures based on other materials. To explain the strong nonlinearity of HgTe-based heterostructures at the THz frequencies, we consider the acceleration of free carriers with high mobility and variable dispersion. This acceleration model, for which the non-parabolicity of the band dispersion is key, in combination with independently measured scattering time and conductivity is in good agreement with our experimental data in a wide temperature range for THz fields below the saturation. Our approach provides a route to material engineering for THz applications based on frequency conversion.

In the first part, we present our recent result on mask-free nanofabrication involving a quasi-deterministic creation of single G- and W-centers in silicon wafers using focused-ion beam (FIB) writing. Using these centers, we implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate telecom single photon emitters at desired positions on the nanoscale In the second part, we present a concept of ultralong, high-density data archiving based on optically active atomic-size defects in silicon carbide (SiC). The information is written in these defects by FIB and read using photoluminescence (PL) or cathodoluminescence (CL). With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs.

A review of single photon emitters in silicon based on ion-induced defects is provided. Fabrication methods and current state of the art are discussed.

Single-photon emitters (SPEs) are one of the elementary building blocks for photonic quantum information and optical quantum computing. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements, and single-photon detection on a silicon chip in a controllable manner. Particularly, fully integrated SPEs on-demand are required for enabling a smart integration of advanced functionalities in on-chip quantum photonic circuits. The major challenge in realizing a fully monolithic, photonic integrated circuitry lies in the development of a quantum light source in silicon since the indirect nature of the small energy bandgap does not allow for efficient PL emission. Nevertheless, below-bandgap light emission can be used for good advantage by exploiting extrinsic and intrinsic point defects acting as SPEs. Indeed, the isolation of SPEs, such as G-, W-, and T-centers, in the optical telecommunication O-band has been recently realized in silicon.. In all these cases, however, SPEs were created uncontrollably in random locations, preventing their scalability. We present mask-free nanofabrication involving a quasi-deterministic creation of single G- and W-centers in silicon wafers using focused-ion beam (FIB) writing. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate telecom SPEs at desired positions on the nanoscale.

An overview of quantum technologies based on spin defects in SiC is presented. It includes microwave assisted spectroscopy, inverted excited-state structure for spin-photon entanglement protocols and acoustic control of spin qubits.

Single-photon emitters (SPEs) are one of the elementary building blocks for photonic quantum information and optical quantum computing. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements, and single-photon detection on a sili- con chip in a controllable manner. Particularly, fully integrated SPEs on-demand are required for enabling a smart integration of advanced functionalities in on-chip quantum photonic circuits. The major challenge in realizing a fully monolithic, photonic integrated circuitry lies in the development of a quantum light source in silicon since the indirect nature of the small energy bandgap does not allow for efficient PL emission. Nev- ertheless, below-bandgap light emission can be used for good advantage by exploiting extrinsic and intrinsic point defects acting as SPEs. Indeed, the isolation of SPEs, such as G-, W-, and T-centers, in the optical telecom- munication O-band has been recently realized in silicon [1-4]. In all these cases, however, SPEs were created uncontrollably in random locations, preventing their scalability. We present mask-free nanofabrication involving a quasi-deterministic creation of single G- and W-centers in silicon wafers using focused-ion beam (FIB) writing. We also implement a scalable, broad-beam implan- tation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabri- cate telecom SPEs at desired positions on the nanoscale [5]. [1] M. Hollenbach et al., Optics Express 28, 26111 (2020) [2] W. Redjem et al., Nature Electronics 3, 738 (2020) [3] Y. Baron et al., ACS Photonics 9, 2337 (2022) [4] D. B. Higginbottom et al., Nature 607, 266 (2022) [5] M. Hollenbach et al., Nat. Commun. 13, 7683 (2022)

This upload represents the data used for publication <> including datasets, images and programming code. 1. Raw_data.rar contains raw data files obtained during transport measurements, two-colour pump-probe experiments(FELBE) and third harmonic generation experiments. 2. Drude_fit.rar contains the result of fitting the complex change in conductivity with Drude fit. 3. Band_structure_calculation.rar contains the result of the fermi energy and dispersion calculations based on kp-method. 4. Theoretical_model_calculation.rar contains the code of the program for the theoretical model for THG and fitting it with experimental data and its result 5. Presentation_Sample_QC0600.pptx contains the information about used sample.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many ap- proach lack the required spatial placement accuracy and Si tech- nology compatibility required for many of the envisioned applica- tions. Here, we present a method to fabricate at will placed single or few SPEs emitting in the telecom O-band in Silicon [1] . The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way to- ward a monolithic, all-silicon-based semiconductor-supercon- ductor quantum circuit for which this work lays the foundations. To achieve our goal we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabri- cation methods have been irradiated with a spot pattern. 6 to 500 Si2+ ions have been implanted per spot using an energy of 40 keV. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom are confirmed by measurements of zero phonon lines (ZPL) at the expected wave length of 1278 nm for the case of carbon rich SOI wafers. In the case of ultra clean SOI wafers and high ion fluxes emission from tri-interstitial Si complexes is observed. The SPE nature of these so called W-centers has also been confirmed by ZPL measurements at 1218 nm. The achieved lateral SPE placement accuracy is below 100 nm in both cases and the success rate of SPE formation is more than 50%. After a discus- sion of the formation statistic we also present an approach how our FIB based approach can be upscaled to wafer-scale nanofabrication of telecom SPEs compatible with complementary metal oxide semiconductor (CMOS) technology for very large scale integration (VLSI).

High harmonic generation (HHG) has applications in various fields, including ultrashort pulse measurements, material characterization and imaging microscopy. Strong THz nonlinearity and efficient third harmonic generation (THG) were demonstrated in graphene [1], therefore it is natural to assume the presence of the same effect in other Dirac materials, such as topological insulators (TI). Topological states can be found in HgTe quantum wells with a thickness of more than 6.3 nm [2], and strained 3D Hg1-xCdxTe thin films with cadmium fraction x < 0.16 [3]. We used a series of HgTe samples corresponding to three qualitatively different cases: 2D trivial and topological structures and 3D topological insulators. By using moderate THz fields, the presence of highly efficient THG was measured in these samples at different temperatures and THz powers. This provides insight into physical mechanisms leading to THG in TIs. For in-depth understanding of Dirac fermions dynamics and dominating scattering mechanisms in HgTe TI, we conducted THz pump-probe experiments that reveal several relaxation time scales. [1] Hafez, H. A. et al., Nature 561, 507 (2018). [2] Bernevig, B. et al. Science 314, 5806 (2006): 1757-1761. [3] Brüne, C., et al. Phys. Rev. Lett. 106, 12 (2011): 126803.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many ap- proach lack the required spatial placement accuracy and Si tech- nology compatibility required for many of the envisioned applica- tions. Here, we present a method to fabricate at will placed single or few SPEs emitting in the telecom O-band in Silicon [1] . The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way to- ward a monolithic, all-silicon-based semiconductor-supercon- ductor quantum circuit for which this work lays the foundations. To achieve our goal we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabri- cation methods have been irradiated with a spot pattern. 6 to 500 Si2+ ions have been implanted per spot using an energy of 40 keV. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom are confirmed by measurements of zero phonon lines (ZPL) at the expected wave length of 1278 nm for the case of carbon rich SOI wafers. In the case of ultra clean SOI wafers and high ion fluxes emission from tri-interstitial Si complexes is observed. The SPE nature of these so called W-centers has also been confirmed by ZPL measurements at 1218 nm. The achieved lateral SPE placement accuracy is below 100 nm in both cases and the success rate of SPE formation is more than 50%. After a discus- sion of the formation statistic we also present an approach how our FIB based approach can be upscaled to wafer-scale nanofabrication of telecom SPEs compatible with complementary metal oxide semiconductor (CMOS) technology for very large scale integration (VLSI).

High harmonic generation (HHG) has applications in various fields, including ultrashort pulse measurements, material characterization and imaging microscopy. Strong THz nonlinearity and efficient third harmonic generation (THG) were demonstrated in graphene [1], therefore it is natural to assume the presence of the same effect in other Dirac materials, such as topological insulators (TI). Topological states can be found in HgTe quantum wells with a thickness of more than 6.3 nm [2], and strained 3D Hg1-xCdxTe thin films with cadmium fraction x < 0.16 [3]. We used a series of HgTe samples corresponding to three qualitatively different cases: 2D trivial and topological structures and 3D topological insulators. By using moderate THz fields, the presence of highly efficient THG was measured in these samples at different temperatures and THz powers. This provides insight into physical mechanisms leading to THG in TIs. For in-depth understanding of Dirac fermions dynamics and dominating scattering mechanisms in HgTe TI, we conducted THz pump-probe experiments that reveal several relaxation time scales. [1] Hafez, H. A. et al., Nature 561, 507 (2018). [2] Bernevig, B. et al. Science 314, 5806 (2006): 1757-1761. [3] Brüne, C., et al. Phys. Rev. Lett. 106, 12 (2011): 126803.

Single-photon sources are one of the elementary building blocks for photonic quantum information and optical quantum computing [1]. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements and single-photon detection on a silicon chip in a controllable manner. Particularly, fully integrated single-photon emitters on-demand are required for enabling a smart integration of advanced functionalities in on-chip quantum photonic circuits [2]. This work presents a mask-free nanofabrication method involving a quasi-deterministic creation of scalable extrinsic color centers in silicon emitting in the optical telecom O-band [3] on a commercial silicon-on-insulator platform using focused ion beam writing. We also show the local writing of an intrinsic color center in silicon, which is linked to a tri-interstitial complex and reveals quantum emission close to the telecom band [4]. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars [5] and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit. [1]D. D. Awschalom et al.,Nature Photonics 12,516 (2018) [2]J. C. Adcock et al.,IEEE, 27, 2, (2021) [3]M. Hollenbach et al.,Optics Express 28,26111 (2020) [4]Y. Baron et al.,arXiv:2108.04283 (2021) [5]M. Hollenbach et al.,arXiv:2112.02680 (2021)

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many ap- proach lack the required spatial placement accuracy and Si tech- nology compatibility required for many of the envisioned applica- tions. Here, we present a method to fabricate at will placed single or few SPEs emitting in the telecom O-band in Silicon [1] . The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way to- ward a monolithic, all-silicon-based semiconductor-supercon- ductor quantum circuit for which this work lays the foundations. To achieve our goal we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabri- cation methods have been irradiated with a spot pattern. 6 to 500 Si2+ ions have been implanted per spot using an energy of 40 keV. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom are confirmed by measurements of zero phonon lines (ZPL) at the expected wave length of 1278 nm for the case of carbon rich SOI wafers. In the case of ultra clean SOI wafers and high ion fluxes emission from tri-interstitial Si complexes is observed. The SPE nature of these so called W-centers has also been confirmed by ZPL measurements at 1218 nm. The achieved lateral SPE placement accuracy is below 100 nm in both cases and the success rate of SPE formation is more than 50%. After a discus- sion of the formation statistic we also present an approach how our FIB based approach can be upscaled to wafer-scale nanofabrication of telecom SPEs compatible with complementary metal oxide semiconductor (CMOS) technology for very large scale integration (VLSI).

Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (VSi) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the VSi into their mS = ±1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q 10^4 – 10^5) with which we find indications of superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of an ensemble of telecom photon emitters in a two-dimensional array of silicon nanopillars. We developed a top-down nanofabrication method, enabling the production of thousands of nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.

Achieving efficient, high-power harmonic generation in the terahertz (THz) spectral domain has technological applications, for example in sixth generation (6G) communication networks [1, 2]. Massless Dirac fermions possess extremely large THz nonlinear susceptibilities and harmonic conversion efficiencies [3–7]. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene [8]. Here, we demonstrate room-temperature THz harmonic generation in a Bi2Se3 topological insulator (TI) and TI-grating metamaterial structures with surface-selective THz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW – an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip THz (opto)electronic applications.

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Negatively charged boron vacancies (VB−) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron−phonon coupling and Jahn−Teller mixing of electronic states. As such, the direct measurement of the zero- phonon line (ZPL) of VB− has remained elusive. Here, we measure the room-temperature ZPL wavelength to be 773 ± 2 nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to VB−. Our observations are consistent with the spatial redistribution of VB− emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using VB− as cavity spin−photon interfaces.

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

High harmonic generation (HHG) has applications in various fields, including ultrashort pulse measurements, material characterization and imaging microscopy. Strong THz nonlinearity and efficient third harmonic generation (THG) were demonstrated in graphene [1], therefore it is natural to assume the presence of the same effect in other Dirac materials, such as topological insulators (TI). Topological states can be found in HgTe quantum wells with a thickness of more than 6.3 nm [2], and strained 3D Hg1-xCdxTe thin films with cadmium fraction x < 0.16 [3]. We used a series of HgTe samples corresponding to three qualitatively different cases: 2D trivial and topological structures and 3D topological insulators. By using moderate THz fields, the presence of highly efficient THG was measured in these samples at different temperatures and THz powers. This provides insight into physical mechanisms leading to THG in TIs. For in-depth understanding of Dirac fermions dynamics and dominating scattering mechanisms in HgTe TI, we conducted THz pump-probe experiments that reveal several relaxation time scales. [1] Hafez, H. A. et al., Nature 561, 507 (2018). [2] Bernevig, B. et al. Science 314, 5806 (2006): 1757-1761. [3] Brüne, C., et al. Phys. Rev. Lett. 106, 12 (2011): 126803.

Single-photon sources are one of the elementary building blocks for photonic quantum information and optical quantum computing. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements and single-photon detection on a silicon chip by a controllable manner. To this end, deterministic single-photon sources monolithically integrated with silicon quantum photonic integrated circuits (QPIC) represent a new tool in quantum photonics, complementing heralded probabilistic sources and offering very-large-scale integration (VLSI). The isolation of single-photon emitters in the optical telecommunication O-band, such as the G centers and W centers, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created randomly and uncontrollably, preventing their scalability. We realize the controllable fabrication of single G and W centers in silicon wafers using focused ion beams with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters in desired positions on the nanoscale. Our results enable the direct realization of QPIC with monolithically integrated single-photon sources with electrical control. Our findings also provide a route for the quasi-deterministic creation of single G and W centers at desired locations of photonic structures, including SOI waveguides and tunable cavities. This altogether unlocks clear pathways toward the implementation of industrial-scale photonic quantum processors.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many ap- proach lack the required spatial placement accuracy and Si tech- nology compatibility required for many of the envisioned applica- tions. Here, we present a method to fabricate at will placed single or few SPEs emitting in the telecom O-band in Silicon [1] . The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way to- ward a monolithic, all-silicon-based semiconductor-supercon- ductor quantum circuit for which this work lays the foundations. To achieve our goal we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabri- cation methods have been irradiated with a spot pattern. 6 to 500 Si2+ ions have been implanted per spot using an energy of 40 keV. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom are confirmed by measurements of zero phonon lines (ZPL) at the expected wave length of 1278 nm for the case of carbon rich SOI wafers. In the case of ultra clean SOI wafers and high ion fluxes emission from tri-interstitial Si complexes is observed. The SPE nature of these so called W-centers has also been confirmed by ZPL measurements at 1218 nm. The achieved lateral SPE placement accuracy is below 100 nm in both cases and the success rate of SPE formation is more than 50%. After a discus- sion of the formation statistic we also present an approach how our FIB based approach can be upscaled to wafer-scale nanofabrication of telecom SPEs compatible with complementary metal oxide semiconductor (CMOS) technology for very large scale integration (VLSI).

Single-photon sources are one of the elementary building blocks for photonic quantum information and optical quantum computing [1]. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements and single-photon detection on a silicon chip in a controllable manner. Particularly, fully integrated single-photon emitters on-demand are required for enabling a smart integration of advanced functionalities in on-chip quantum photonic circuits [2]. This work presents a mask-free nanofabrication method involving a quasi-deterministic creation of scalable extrinsic color centers in silicon emitting in the optical telecom O-band [3] on a commercial silicon-on-insulator platform using focused ion beam writing. We also show the local writing of an intrinsic color center in silicon, which is linked to a tri-interstitial complex and reveals quantum emission close to the telecom band [4]. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars [5] and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit. [1]D. D. Awschalom et al.,Nature Photonics 12,516 (2018) [2]J. C. Adcock et al.,IEEE, 27, 2, (2021) [3]M. Hollenbach et al.,Optics Express 28,26111 (2020) [4]Y. Baron et al.,arXiv:2108.04283 (2021) [5]M. Hollenbach et al.,arXiv:2112.02680 (2021)

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many ap- proach lack the required spatial placement accuracy and Si tech- nology compatibility required for many of the envisioned applica- tions. Here, we present a method to fabricate at will placed single or few SPEs emitting in the telecom O-band in Silicon [1] . The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way to- ward a monolithic, all-silicon-based semiconductor-supercon- ductor quantum circuit for which this work lays the foundations. To achieve our goal we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabri- cation methods have been irradiated with a spot pattern. 6 to 500 Si2+ ions have been implanted per spot using an energy of 40 keV. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom are confirmed by measurements of zero phonon lines (ZPL) at the expected wave length of 1278 nm for the case of carbon rich SOI wafers. In the case of ultra clean SOI wafers and high ion fluxes emission from tri-interstitial Si complexes is observed. The SPE nature of these so called W-centers has also been confirmed by ZPL measurements at 1218 nm. The achieved lateral SPE placement accuracy is below 100 nm in both cases and the success rate of SPE formation is more than 50%. After a discus- sion of the formation statistic we also present an approach how our FIB based approach can be upscaled to wafer-scale nanofabrication of telecom SPEs compatible with complementary metal oxide semiconductor (CMOS) technology for very large scale integration (VLSI).

High harmonic generation (HHG) has applications in various fields, including ultrashort pulse measurements, material characterization and imaging microscopy. Strong THz nonlinearity and efficient third harmonic generation (THG) were demonstrated in graphene [1], therefore it is natural to assume the presence of the same effect in other Dirac materials, such as topological insulators (TI). Topological states can be found in HgTe quantum wells with a thickness of more than 6.3 nm [2], and strained 3D Hg1-xCdxTe thin films with cadmium fraction x < 0.16 [3]. We used a series of HgTe samples corresponding to three qualitatively different cases: 2D trivial and topological structures and 3D topological insulators. By using moderate THz fields, the presence of highly efficient THG was measured in these samples at different temperatures and THz powers. This provides insight into physical mechanisms leading to THG in TIs. For in-depth understanding of Dirac fermions dynamics and dominating scattering mechanisms in HgTe TI, we conducted THz pump-probe experiments that reveal several relaxation time scales. [1] Hafez, H. A. et al., Nature 561, 507 (2018). [2] Bernevig, B. et al. Science 314, 5806 (2006): 1757-1761. [3] Brüne, C., et al. Phys. Rev. Lett. 106, 12 (2011): 126803.

We report the use of optically addressable spin qubits in SiC to probe the static magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

Silicon, the ubiquitous material for computer chips, has recently been shown to be instrumental for hosting sources of single-photons emitting in the strategic optical telecommunication O-band (1260-1360 nm)[1], the so-called G center. To increase the brightness and the photon extraction efficiency of single G center, the coupling of these centers into photonic structures is strong. This work presents a top-down approach avoiding the use of ion beam-based etching methods for fabricating high-quality defect-free photonic structures such as silicon nanopillars, which can host singlephoton emitters. This method builds upon a wet-chemical process known as metal-assisted chemical etching. We report the successful fabrication of two-dimensional arrays of vertically-directed waveguiding silicon nanopillars. We also show the etch chemistry dependence on the Si wafer resistivity along with its effect on the etch rate and the sidewall roughness of pillars for a variety of pillar diameters. References:[1] M. Hollenbach, et al. Opt. Express 28,26111-26121

We report the use of optically addressable spin qubits in SiC to probe the static magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

We report the use of optically addressable spin qubits in SiC to probe the static magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

We report the use of optically addressable spin qubits in SiC to probe the static magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices.

The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerface of the AlN/4H-SiC structure has been studied. Stresses near the heterointerface have been determined using con- focal Raman spectroscopy. The spin–strain coupling constants −0.1 GHz/strain and −0.8 GHz/strain for the V2 center in 4H-SiC have been experimentally determined for the first time using the optically detected magnetic resonance method. The results obtained can be used to control spin states in SiC by means of the controlled piezoelectric strain in AlN and to estimate the fine-structure parameter D of spin centers using Raman scattering. Such an estimate makes it possible to forecast magnetometric parameters of nanosensors based on SiC nanocrystals.

We report the use of optically addressable spin qubits in SiC to probe the static magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

We report the use of optically addressable spin qubits in SiC to probe the static magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

Optically active spin centers associated with atomic-scale defects in SiC are promising candidates for quantum technology owing to their outstanding optical and spin properties. Photoluminescence as a mature optical investigating tool is widely used for the identification of spin defects and exploration of their properties. However, in the case of spectrally overlapped contributions from different types of defects, the traditional photoluminescence measurement cannot be used to separately obtain their optical and vibrational properties, such as the local phonon energy and the Debye-Waller factor. Here, we apply spin resonant microwave-assisted spectroscopy to investigate the optical and vibrational properties of silicon vacancies in 6H-SiC and divacancies in 4H- and 6H-SiC. We isolate contributions from each type of defect, investigate their local vibrational modes and obtain the Debye-Waller factor. This work proves that microwave-assisted spectroscopy is a suitable tool for the investigation of optical and vibrational properties of a large variety of spin defects.