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401. AMS Measurement of 53 Mn at CIAE

402. Erratum: 'Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates'

403. GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template

404. 2,6-Dinitrotoluene

405. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

406. Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

407. Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer

408. Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

409. Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth

410. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

411. Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process

412. Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N2 and H2 atmospheres

413. Enhancing the Emission Efficiency of In[sub 0.2]Ga[sub 0.8]N∕GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates

414. Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates

417. Micrometam C Protects against Oxidative Stress in Inflammation Models in Zebrafish and RAW264.7 Macrophages.

418. Infrequent DNA methylation of mi-9-1 and mi-9-3 in multiple myeloma.

420. Effects of Carbide Formation in Graphene Growth.

421. High quality ultraviolet AlGaN∕GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

422. Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

432. Editorials

437. High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers.

438. Lignans from the bark of Eucommia ulmoides inhibited Ang II-stimulated extracellular matrix biosynthesis in mesangial cells.

441. Hypertensive Cardiac Remodeling Effects of Lignan Extracts from Eucommia ulmoides Oliv. Bark -- A Famous Traditional Chinese Medicine.

442. Disruption of E627 and R683 interaction is responsible for B-cell acute lymphoblastic leukemia caused by JAK2 R683G(S) mutations.

443. Synthesis and Crystal Structure of Tetrabutylammonium 4-(2-Bromothiophene-5-Sulfanilamide)-Benzoate.

444. Origin and phylogenetic relationships of the Old World Gesneriaceae with actinomorphic flowers inferred from ITS and trnL-trnF sequences.

445. Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition.

446. Enhancing the Emission Efficiency of In0.2Ga0.8N/GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates.

447. Selective growth of well-aligned carbon nanotubes by APCVD.

448. A new species of Chirita (Gesneriaceae) from Yunnan, China.

449. Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers.

450. Further Daphniphyllum Alkaloids from the Leaves of Daphniphyllum macropodumMiq.

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