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Abstract: A heavily boron (B)-doped germanium (Ge) bulk crystal was grown by the Czochralski method. The B concentrations in the crystal were evaluated by measuring the carrier concentration with the Hall effect and resistance method. Maximum solubility of B into Ge was estimated to be 2.5×1018 cm−3. The equilibrium segregation coefficient of B in Ge was considered to be 5–6, much smaller than that reported previously. [Copyright &y& Elsevier]

Electron transport across individual Si nanochains and silicide nanochains is investigated using a micro-manipulator in a transmission electron microscope. The current increases nonlinearly with increasing the bias voltage. Electrical breakdowns occur with a current typically as large as 10(1)-10(2) nA. Furthermore, some FN plots exhibit a bend presumably due to the formation of a heavily distorted nanotube of carbon.

A SiC nanowire can be transformed into a carbon nanotube or a SiC-C core-sheath nanowire owing to Joule heating by applying a current typically on the order of 10 muA, and the transformation can be observed in situ by means of transmission electron microscopy.