401. Air Processed Cs2AgBiBr6 Lead-free Double Perovskite High-mobility Thin Film Field-effect Transistors
- Author
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Punniamoorthy Ravirajan, Gnanasampanthan Abiram, Fatemeh Heidari Gourji, Dhayalan Velauthapillai, Selvakumar Pitchaiya, and Thanihaichelvan Murugathas
- Subjects
Materials science ,business.industry ,Optoelectronics ,Field-effect transistor ,Double perovskite ,Thin film ,business ,Lead (electronics) - Abstract
This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirms the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in SEM image and was found to be around 412 (±44) nm the larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated on an electrode deposited heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric under ideal conditions in air processing under ambient pressure and temperature. The Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2s-1V-1 was obtained for the FETs with a channel length of 30 µm, and the hole mobility was reduced by an order of magnitude (0.012 cm2s-1V-1) when the channel length was doubled. The on current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in or FET that could be attributed to the much larger grain size of Cs2AgBiBr6 film made in this work.
- Published
- 2021
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