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application/pdf, We have measured photoluminescence (PL) spectra and time-resolved PL in CdTe quantum dots (QDs) under the longitudinal magnetic field up to 10T. Circular polarization of PL increases with increasing magnetic field, while its linear polarization is absent under linearly polarized excitation. Time-resolved PL measurements clarified that this behavior is caused by the suppression of spin relaxation induced by the longitudinal magnetic field. We believe that this behavior is related to the hyperfine interaction of electron spin with magnetic momenta of lattice nuclei.

An exogenous supply of growth factors and bioreplaceable scaffolds may help bone regeneration. The aim of this study was to examine the effects of TGF-β1 and VEGF-A transgenes on the osteogenic potential of bone marrow stromal cells. Rat bone marrow stromal cells were transfected with plasmids encoding mouse TGF-β1 and/or VEGF-A complementary DNAs and cultured for up to 28 days. Furthermore, collagen scaffolds carrying combinations of the plasmids-transfected cells were implanted subcutaneously in rats. The transgenes increased alkaline phosphatase activity, enhanced mineralized nodule formation, and elevated osteogenic gene expressions in vitro. In vivo, messenger RNA expression of osteogenic genes such as BMPs and Runx2 elevated higher by the transgenes. The data indicate that exogenous TGF-β1 and VEGF-A acted synergistically and could induce osteoblastic differentiation of bone marrow stromal cells in both cell culture and an animal model. The results may provide valuable information to optimize protocols for transgene-and-cell-based tissue engineering.

Nanoparticles represent a novel class of agents for cancer treatment. In the present study, we examined the effects of epidermal growth factor receptor (EGFR)-targeted hybrid plasmonic magnetic nanoparticles (NP) on non-small cell lung cancer (NSCLC) cells. The nanoparticles (NP) consisted of a paramagnetic iron core that is surrounded by a gold layer and is functionalized with monoclonal anti-EGFR antibody (C225) or control rabbit IgG antibody (IgG). The nanoparticles were tested against a panel of human lung cancer cells that were mutant (HCC827, H1819), wild-type (H1299) or null (H520) for EGFR and compared to EGFR-positive normal fibroblasts (MRC9, WI38) and normal human bronchial epithelial (NHBE) cells. Treatment of tumor cells with C225-NP resulted in a strong and significant inhibitory effect of cell growth compared to normal cells. C225-NP-mediated inhibitory effect was observed only in EGFR-positive tumor cells (HCC827, H1819, H1299) but not in EGFR-null H520 cells. EGFR-mutant cells (HCC827) were the most sensitive to C225-NP. No significant growth inhibitory effects were observed in IgG-NP-treated cells when compared to untreated cells. Molecular analysis showed C225-NP selectively inhibited phosphorylated p-EGFR protein expression and EGFR-mediated signal transduction resulting in induction of autophagy followed by apoptosis. Autophagy occurred as early as twenty-four hours after treatment with an increase in LC3-II content and autophagic vacuoles observed by Western blotting and electron microscopy respectively. Apoptosis as determined by flow cytometry and Western blotting showed an increase in the number of sub-G1 population cells and cleavage of caspase-3 and PARP in C225-NP-treated cells. Optical images determined by dark-field microscopy showed an increase in the concentration of C225-NP bound to EGFR-expressing NSCLC cells but not EGFR-null NSCLC cells. C225-NP exhibited 2-7 fold higher efficiency in induction of cell killing in comparison with the same amount of free C225 antibody. Free C225 antibody did not induce autophagy in cells. Investigation into how C225-NP but not C225 antibody or NP-alone triggers autophagy and initiates apoptosis showed induction of a DNA damage response as evidenced by the formation of γH2AX foci in C225-NP-treated cells. Minimal to no γH2AX foci were observed in cells that were untreated, treated with C225 antibody or NP-alone or treated with IgG-NP. Our data show that EGFR specific NP selectively induced cytotoxic effects in EGFR-expressing lung cancer cells via a novel cell-death mechanism that is not characteristic of the free antibody thus increasing efficacy of therapy. Citation Format: {Authors}. {Abstract title} [abstract]. In: Proceedings of the 101st Annual Meeting of the American Association for Cancer Research; 2010 Apr 17-21; Washington, DC. Philadelphia (PA): AACR; Cancer Res 2010;70(8 Suppl):Abstract nr 3505.

Geometric structures for II-VI diluted magnetic semiconductor iodine-doped Zn1-xCrxTe films (x = 0.05) grown by molecular-beam epitaxy with high-temperature ferromagnetism were investigated by using fluorescence x-ray absorption fine structure (XAFS) measurement in order to elucidate the relationship between the geometric structure and the magnetic properties. The XAFS analysis has revealed that the local structures around Cr atoms are dependent on the growth temperature. For the samples grown at 360 and 390 °C, the majority of Cr atoms are tetrahedrally coordinated to Te atoms, indicating the formation of substitutional Cr on Zn-site in ZnTe lattice and/or zinc-blende (ZB) CrTe. On the contrary, for the samples grown at 300 and 330 °C the additional formation of secondary phases such as Cr-Te compounds was suggested. Therefore, it is deduced that the formation of secondary phase such as Cr-Te compounds are related to the increase of Curie temperature. The XAFS analysis has also revealed that the local structures do not depend on the I concentration. For the samples with different I concentrations, the Cr atoms form substitutional Cr on Zn-site in ZnTe lattice and/or ZB CrTe, corresponding to the result of TEM measurement.

We report a reversible manipulation of short-range spin ordering in Co-doped ZnO through hydrogenation and dehydrogenation processes. In both magnetic-circular dichroism and superconducting quantum interference device measurements, the ferromagnetism was clearly induced and removed by the injection and ejection of hydrogen, respectively. The x-ray photoelectron spectroscopy results and the first-principles electronic structure calculations consistently support the dependence of the ferromagnetism on the hydrogen position and the contribution of transition metal ions. The results suggest the ferromagnetic interaction between Co ions can be reversibly controlled by the hydrogen-mediated intrinsic spin ordering in Co doped ZnO.

Recent theoretical and experimental achievements on far-infrared (FIR) laser oscillation in p-Ge are reported. The experimentally observed cyclotron-resonance and inter-valence band laser oscillations are explained by theories. The Luttinger Hamiltonian describing the valence bands in the presence of crossed electric and magnetic fields are solved and the distribution functions of holes are derived to evaluate (negative) absorption coefficients in the FIR-range. Experimental results studying the influence of uniaxial stress on the oscillations are also presented and compared with the theory.

Manganese silicide (Mn–Si) related compound with a Curie temperature (TC) of 300K was synthesized on a 4H-SiC homoepitaxial wafer. Thin Mn layer was deposited on the SiC wafer, and then annealing was performed to diffuse the Mn atoms into the SiC epitaxial layer. Transmission magnetic circular dichroism spectra reflected that of the SiC wafer, although the structural investigations suggested that the dominant phase of the synthesized layer was paramagnetic Mn5Si2. At this stage, two possible explanations are considered the origin of the observed ferromagnetism. One is that a small amount of carbon (C) incorporated into the Mn5Si2 host induced the ferromagnetic order in Mn5Si2. On the other hand, the partial formation of a ferromagnetic SiC-related component at the vicinity of the lower side of the interface between SiC and Mn5Si2 layers is considered the other possible explanation.

Electric and magnetic properties were investigated on p-type Zn1−xCrxTe doped with nitrogen (N) as an acceptor. Thin films of p-Zn1−xCrxTe(x≦0.09) were grown by molecular-beam epitaxy with the supply of N2 gas excited by rf plasma. With the increase of Cr composition x at an almost fixed N concentration of the order of 1020cm−3, the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped Zn1−xCrxTe were suppressed due to the nitrogen doping; with N concentrations of the order of 1020cm−3, hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on...

Detailed measurements of magnetoresistance(MR), the angular dependence as well as the magnetic field dependence, of PrxY1−xBa2Cu3O7−δ single crystals have been performed aboveTc forx up to 0.5. In the samples withx around 0.4, it is found that a negative component is observed as a clear dip in the angular dependence of MR, which is hidden by a large positive component in the measurement of the magnetic field dependence. According to the analysis based on a model wher the negative component is due to the Anderson weak localization, the temperature dependence of the dephasing lengthLc is obtained asLc(T) ∝T−1, which is expected for the inelastic scattering between 2D-electrons. The result indicates that the random potential induced by Pr strongly affects the conduction in CuO2 layer.

We performed the crystal structure analysis of PrxNd1−x(Ba1.9Nd0.1)Cu3O7−δ system from x = 0 to 1.0 by neutron powder diffraction. We are especially interested in the distances of M(2)–O(4) and M(2)–O(5) in order to reveal the effect of substitution of Nd by Pr, where M(2) indicates the site occupied by Nd/Pr and O(4) and O(5) are the oxygen sites in the CuO2 layer. As a result, both distances become anomalously smaller with increase of the Pr-contents. According to an estimation by the Bond-Valence-Sum of M(2), the valence of Pr ranges from +3.4 to +3.5.

The effect of oxygen on polycrystalline-Si (poly-Si) and SiO2 etching in hydrogen bromide (HBr) reactive ion etching plasmas has been studied by measuring etch rates and using x-ray photoelectron spectroscopy (XPS) to study compositional changes in the surface layer. The etch rate of the poly-Si increases dramatically from 30 to 235 nm/min as the O2 concentration increases from 0% to 25%, whereas the SiO2 etch rate gradually decreases from 3 to 1 nm/min. Above 30% O2 in HBr, the poly-Si etch rate abruptly decreases by a factor of 16 compared with that at 25%. From XPS analysis, it is found that the abrupt decrease of the poly-Si etch rate at O2 concentrations of more than 30% is closely related with the composition and thickness of an SiBrxOy layer formed during the HBr/O2 plasma exposure. The SiBrxOy layer has a composition of nearly SiO2. Br ions cannot permeate the SiBrxOy layer formed in plasmas containing 30% O2 in HBr (or greater), and therefore, the poly-Si etch terminates.

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L/sub g/=0.9 mu m). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5*21.5 mu m/sup 2/, one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size. >

Polarization of far‐infrared laser oscillation in p‐Ge under crossed electric and magnetic fields is studied by use of a linear polarizer. The laser emission is found to be polarized with the primary axis nearly parallel to the current vector in the Ge laser rod, independent of the strength of electric and magnetic fields and the oscillation wavelength. An analysis of the resonance condition of an optical resonant cavity placed in Faraday configuration together with the experimental results make it probable that net Faraday rotation vanishes in the laser oscillation. To support this it is pointed out that both the free‐carrier Faraday effect and the intervalence band Faraday effect are strongly affected by the strong radiations caused by laser oscillation. The relation of the anisotropy of carrier distribution in velocity space to the observed polarization is also discussed.

We have investigated nonalloyed ohmic contacts on HEMT's using a highly conductive n+-InGaAs layer. The minimum specific contact resistance obtained was 4.8 × 10-7Ω.cm2, and the IV characteristics were equal to or better than those of conventional HEMT's with alloyed ohmic contacts. The maximum transconductances of a nonalloyed ohmic HEMT were 240 mS/mm at 300K and 340 mS/mm at 88K for a gate length of 1.1 µm. We conclude that it is not necessary for HEMT's with two-dimensional electron gas (2DEG) channels to have alloyed ohmic contacts, because the tunneling conduction is significant at the n-GaAs/n-AlGaAs/undoped GaAs double heterojunction.

The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that of lattice-matched InGaAs/InAlAs HEMTs on InP. The current-gain cutoff frequency (f/sub t/) characteristics as a function of gate length (L/sub g/) indicate that the f/sub t/-L/sub g/ product of approximately 26 GHz- mu m in InGaAs/InAlAs HEMTs is 23% higher than that of approximately 21 GHz- mu m in InGaAs/AlGaAs HEMTs. The performance of InGaAs/AlGaAs HEMTs is also 46% higher than that of conventional GaAs/AlGaAs HEMTs ( approximately 18 GHz- mu m). These data are very useful in improving the device performance of HEMTs for a given gate length. >

In-situ crystallized Bi,Ga:DyIG films were deposited on GGG substrates by sputtering. The films had quite smooth surfaces and showed square hysteresis loops with high coercivity. Dynamic recording was carried out using an Ar laser. The figure of merit of the disk with an Al reflector was about 10 times larger than that of amorphous rare-earth transition metal magneto-optic films. A CNR as high as 54 dB was obtained for a bit length of 1.4 μm.

We successfully observed the time development of an electric‐field‐induced drift of a negatively‐charged exciton X− formed in an n‐type modulation‐doped (Cd,Mn)Te quantum well. The drift of X− was found to be promoted by magnetic fields. This could be resulting from the suppression of an exciton‐magnetic‐polaron formation.

Intervalence band laser oscillation in p-Ge is achieved in a semiconfocal resonator system using external reflectors and the directivity of the output radiation is thereby largely improved. The spectrum of the radiation consists of several discrete lines due to simultaneous oscillations in multimodes. Preliminary attempts to select a single oscillation line by means of Fabri-Perot type interference are also described.

Two different single spin systems are studied in this thesis: single Mn spin in positively charged quantum dots, and single Cr atom in a neutral quantum dots. Both are probed optically, using the photoluminescence of a single dot. Both systems are strongly coupled to phonons and strains. This coupling opens new ways to probe and control the spins of the magnetic atoms, not only optically, but also by modulating the strain state at their position.Using resonant photoluminescence, we demonstrate the existence of optical Λ-level systems in Mn-doped positively charged quantum dots, and use them to study the dynamics of the hole-Mn hybrid spin. It reveals hole-Mn spin flip-flops in the nanosecond range due to the interplay of the interaction with acoustic phonons and the hole-Mn exchange interaction. We also show that degenerated electron-Mn states separated by spin flips of two units are coupled through the in-plane strain anisotropy, and study this strain induced coherent dynamics.Using magneto-optic experiments, we are able to probe the spin of a single Cr atom and extract a magnetic anisotropy D0 in the meV range. Several parameters of the QD are extracted from these experiments, and, especially, we show that the h-Cr coupling is anti-ferromagnetic. We demonstrate that the Cr spin can be prepared using resonant optical pumping. These experiments evidence a Cr relaxation time under excitation in the 10 nanoseconds range. This relaxation is driven by hole-Cr spin flip-flops caused by the interplay of the interaction with acoustic phonons and the hole-Cr exchange interaction. A relaxation in the dark in the microseconds range was also measured. Possibility of control of the Cr spin was also demonstrated using the optical Stark effect., Deux systèmes de spins uniques sont étudiés dans cette thèse : d’abord un unique atome de Mn dans une boîte quantique chargée positivement, puis un unique atome de Cr dans une boîte quantique neutre. Cette étude a été entièrement réalisée par des moyens optiques, via la photoluminescence d’une boîte unique. Ces deux systèmes sont fortement couplés aux phonons et aux contraintes. Ce couplage permet de ne plus se limiter à une détection et une manipulation du spin optique, mais ouvre également la possibilité de le faire en modulant le champ de contrainte.Par des expériences de photoluminescence résonante, nous montrons l’existence de niveaux optique en Λ dans les boîtes quantiques chargées positivement et dopées d’un unique atome de Mn. Ces niveaux en Λ sont utilisés pour étudier la dynamique du spin hybride trou-Mn. Cette étude révèle l’existence de flip-flops des spins du trou et du Mn à l’échelle de la nanoseconde, dus à l’interaction d’échange trou-Mn et à l’interaction avec les phonons acoustiques. Un couplage par l’anisotropie des contraintes dans le plan de niveaux électron-Mn dégénérés et séparé par un spin flip de deux unités est aussi démontré, et dynamique cohérente induite par les contraintes est étudiée en détail.Grâce à des expériences magnéto-optiques, nous avons pu détecter la photoluminescence d’un atome de Cr unique dans une boîte quantique, et extraire une anisotropie magnétique du spin du Cr de quelques meV. De nombreux paramètres des boîtes étudiées peuvent être extrait de ces expériences, et nous montrons notamment que le couplage trou-Cr est antiferromagnétique. Nous démontrons que le spin du Cr peut être préparé par pompage optique résonant. Ces expériences ont permis de montrer que, sous excitation, le spin du Cr fait des flip-flops avec celui du trou, causé par l’interaction d’échange trou-Cr et le couplage aux phonons acoustiques. Ces flip-flops causent une relaxation rapide du spin du Cr sous excitation, mesurée comme de l’ordre de quelques dizaines de nanosecondes. Dans le noir, nous avons trouvé que le spin du Cr relaxe en quelques microsecondes. Finalement, nous avons aussi démontré la possibilité de contrôler le spin du Cr par l’effet Stark optique.

Two different single spin systems are studied in this thesis: single Mn spin in positively charged quantum dots, and single Cr atom in a neutral quantum dots. Both are probed optically, using the photoluminescence of a single dot. Both systems are strongly coupled to phonons and strains. This coupling opens new ways to probe and control the spins of the magnetic atoms, not only optically, but also by modulating the strain state at their position.Using resonant photoluminescence, we demonstrate the existence of optical Λ-level systems in Mn-doped positively charged quantum dots, and use them to study the dynamics of the hole-Mn hybrid spin. It reveals hole-Mn spin flip-flops in the nanosecond range due to the interplay of the interaction with acoustic phonons and the hole-Mn exchange interaction. We also show that degenerated electron-Mn states separated by spin flips of two units are coupled through the in-plane strain anisotropy, and study this strain induced coherent dynamics.Using magneto-optic experiments, we are able to probe the spin of a single Cr atom and extract a magnetic anisotropy D0 in the meV range. Several parameters of the QD are extracted from these experiments, and, especially, we show that the h-Cr coupling is anti-ferromagnetic. We demonstrate that the Cr spin can be prepared using resonant optical pumping. These experiments evidence a Cr relaxation time under excitation in the 10 nanoseconds range. This relaxation is driven by hole-Cr spin flip-flops caused by the interplay of the interaction with acoustic phonons and the hole-Cr exchange interaction. A relaxation in the dark in the microseconds range was also measured. Possibility of control of the Cr spin was also demonstrated using the optical Stark effect.; Deux systèmes de spins uniques sont étudiés dans cette thèse : d’abord un unique atome de Mn dans une boîte quantique chargée positivement, puis un unique atome de Cr dans une boîte quantique neutre. Cette étude a été entièrement réalisée par des moyens optiques, via la photoluminescence d’une boîte unique. Ces deux systèmes sont fortement couplés aux phonons et aux contraintes. Ce couplage permet de ne plus se limiter à une détection et une manipulation du spin optique, mais ouvre également la possibilité de le faire en modulant le champ de contrainte.Par des expériences de photoluminescence résonante, nous montrons l’existence de niveaux optique en Λ dans les boîtes quantiques chargées positivement et dopées d’un unique atome de Mn. Ces niveaux en Λ sont utilisés pour étudier la dynamique du spin hybride trou-Mn. Cette étude révèle l’existence de flip-flops des spins du trou et du Mn à l’échelle de la nanoseconde, dus à l’interaction d’échange trou-Mn et à l’interaction avec les phonons acoustiques. Un couplage par l’anisotropie des contraintes dans le plan de niveaux électron-Mn dégénérés et séparé par un spin flip de deux unités est aussi démontré, et dynamique cohérente induite par les contraintes est étudiée en détail.Grâce à des expériences magnéto-optiques, nous avons pu détecter la photoluminescence d’un atome de Cr unique dans une boîte quantique, et extraire une anisotropie magnétique du spin du Cr de quelques meV. De nombreux paramètres des boîtes étudiées peuvent être extrait de ces expériences, et nous montrons notamment que le couplage trou-Cr est antiferromagnétique. Nous démontrons que le spin du Cr peut être préparé par pompage optique résonant. Ces expériences ont permis de montrer que, sous excitation, le spin du Cr fait des flip-flops avec celui du trou, causé par l’interaction d’échange trou-Cr et le couplage aux phonons acoustiques. Ces flip-flops causent une relaxation rapide du spin du Cr sous excitation, mesurée comme de l’ordre de quelques dizaines de nanosecondes. Dans le noir, nous avons trouvé que le spin du Cr relaxe en quelques microsecondes. Finalement, nous avons aussi démontré la possibilité de contrôler le spin du Cr par l’effet Stark optique.