251. Stress-Induced Indirect to Direct Band Gap Transition in β-FeSi2 Nanocrystals Embedded in Si.
- Author
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Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Iinuma, M., and Terai, Y.
- Subjects
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STRAINS & stresses (Mechanics) , *BAND gaps , *NANOCRYSTALS , *SILICON , *CRYSTAL growth - Abstract
Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and β-FeSi nanocrystals is formed on the surface, sometimes β and β phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all β-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm² with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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