298 results on '"Coffa, S."'
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252. Plasma Etching Processes
253. A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in Inert-Gas Implanted Silicon
254. Plasma Immersion Ion Implantation: A Perspective
255. Structural Study of the Epitaxial Realignment of Polycrystalline Si Films Onto Si Substrates
256. The effect of electronic energy loss on epitaxial YBa2Cu3O7 thin films after heavy ion irradiation and annealing up to room temperature
257. Preparation and Characterisation of Thin Film Simox Material
258. Dislocation formation in Si implanted at elevated temperature
259. Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N+ Implantation in Silicon
260. Orientation Phenomena in MeV Implants of P IN Si
261. Basic Aspects of Ion Implantation
262. Lithography for Manufacturing at 0.25 Micrometer and Below
263. Surface Science and Semiconductor Processing
264. Optical Analysis of Oxygen in Epitaxial Silicon
265. On the Dirty Contacts on N-Type Silicon
266. Electrical Properties of 'Clean' and Fe — Decorated Stacking Faults in P-Type Silicon
267. Fundamentals of Semiconductor Processing
268. Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation
269. Optoelectronic Materials
270. Kinetics and Dynamics of MBE Growth
271. Rapid Thermal Chemical Vapor Deposition of SixGe1-x Alloys on Si and SiO2 and New Applications of SixGe1-x Alloys in Advanced Mosfet Processes
272. Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layers
273. Defect Aspects of Advanced Device Technologies
274. Silicon and Silicon:Germanium Alloy Growth; Means and Applications
275. Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin Pecvd a-SiO2 Gate Dielectric
276. Preparation and Characterization of Silicon Ribbons
277. Microstructural evolution of SiO{sub x} films and its effect on the luminescence of Si nanoclusters
278. Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices.
279. Beta1 integrin is required for ureteric bud branching development
280. Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiO x
281. 3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE)
282. Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si
283. Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
284. MATERIALS AND PROCESSING ISSUES FOR THE MANUFACTURING OF INTEGRATED PASSIVE AND ACTIVE DEVICES ON FLEXIBLE SUBSTRATES
285. Properties of ion beam synthesized iron disilicide dots
286. Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100)
287. Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si
288. EXAFS analysis of Er sites in Er-O and Er-F co-doped crystalline Si
289. A single mutation in arrestin-2 prevents ERK1/2 activation by reducing c-Raf1 binding.
290. The effect of arrestin conformation on the recruitment of c-Raf1, MEK1, and ERK1/2 activation.
291. High sensitivity protein assays on microarray silicon slides.
292. How does arrestin assemble MAPKs into a signaling complex?
293. Beta1 integrin expression by podocytes is required to maintain glomerular structural integrity.
294. H-Ras, R-Ras, and TC21 differentially regulate ureteric bud cell branching morphogenesis.
295. Adding semantics to gene expression profiles: new tools for drug discovery.
296. Differential expression of collagen- and laminin-binding integrins mediates ureteric bud and inner medullary collecting duct cell tubulogenesis.
297. Gene expression profiles of apoptotic neurons.
298. Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si.
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