251. Segregation of boron in germanium crystal
- Author
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Taishi, T., Murao, Y., Ohno, Y., and Yonenaga, I.
- Subjects
- *
GERMANIUM crystals , *CRYSTAL growth , *BORON , *HALL effect , *SOLUBILITY , *SOLUTION (Chemistry) , *TWINNING (Crystallography) , *CRYSTAL lattices - Abstract
Abstract: A heavily boron (B)-doped germanium (Ge) bulk crystal was grown by the Czochralski method. The B concentrations in the crystal were evaluated by measuring the carrier concentration with the Hall effect and resistance method. Maximum solubility of B into Ge was estimated to be 2.5×1018 cm−3. The equilibrium segregation coefficient of B in Ge was considered to be 5–6, much smaller than that reported previously. [Copyright &y& Elsevier]
- Published
- 2008
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