301. Polar code-based error correction code scheme for NAND flash memory applications
- Author
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Xiaohu You, Haochuan Song, Chuan Zhang, and Shunqing Zhang
- Subjects
Hardware_MEMORYSTRUCTURES ,Polar code ,business.industry ,Computer science ,Nand flash memory ,Reliability (computer networking) ,05 social sciences ,050801 communication & media studies ,020206 networking & telecommunications ,Data_CODINGANDINFORMATIONTHEORY ,02 engineering and technology ,Flash memory ,Gray code ,Flash (photography) ,0508 media and communications ,0202 electrical engineering, electronic engineering, information engineering ,business ,Error detection and correction ,Flash file system ,Computer hardware ,Decoding methods - Abstract
With the development of flash technology, multilevel per cell (MLC) NAND flash memory has mastered the key market because of its storage capacity superiority. However, excessive density increment leads to decay of reliability of MLC NAND flash memory, thus an appropriate error correction code (ECC) is required to address this issue. This paper presents an efficient multi-strategy ECC scheme called pre-check scheme which consists of hard, quantized-soft, and pure-soft decoders geared to MLC NAND flash memory based on polar code proposed by E. Arikan to overcome the aforementioned drawbacks with better performance and lower complexity. The hard decoder is designed to correct the majority of erroneous codewords in the initial phase of the flash memory, while the soft decoders aim to correct codewords which contain larger amount of errors. In addition, we clarify that the mapping scheme using Gray code can achieve best performance compared to other alternatives.
- Published
- 2016
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