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We calculated Single Event Upset (SEU) cross-section as well as the neutron Soft Error Rate (SER) at ground level for three SRAMs (90 nm, 65 nm an 40 nm). For this purpose, we first investigate the transient current pulse induced at each drain electrode, by using the diffusion model for the transient current pulses. Then, we performed the same simulations by replacing each transient current by a simple double exponential law model, for which the parameters were set in order to keep the same fundamental parameters of the diffusion model such as total charge, maximum value of current and its corresponding occurrence time. Our results show a little systematic increase of the cross section while using the double exponential law. Moreover, we showed that only two parameters of the double exponential law are actually required to investigate Single Event Upsets. Finally, we provided for the 90-nm some analytical expression in order to estimate the distribution of parameters that appear in the double exponential law. [ABSTRACT FROM PUBLISHER]

In this paper, the single-event effects on a 28-nm static random access memory-based field-programmable gate array (FPGA) under CERN’s mixed-particle field are analyzed. The methodology followed for CERN electronics radiation hardness assurance and the particularities of testing an FPGA under a mixed-particle field are demonstrated. More specifically, the potential contribution of low-energy particles to the configuration memory (CRAM) and block memory (BRAM) bit upset sensitivity is investigated. By using a method of irradiating the device in different locations at CERN high-energy accelerator mixed field/facility with different particle energy spectra, it has been found that there is a significant impact of thermal neutrons, increasing the CRAM and BRAM cross section by a factor of $\times 3$. As a complement to this paper, an example application is also tested, in the context of future upgrades at the CERN accelerator complex. Results estimate that the application fails less than 10 times per year, leading to the conclusion that such devices may be used for low criticality applications along the accelerator complex. [ABSTRACT FROM AUTHOR]

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. [ABSTRACT FROM AUTHOR]

This paper presents a comparative analysis of the single-event effect (SEE) sensitivity of Double Data Rate memories from different manufacturers. Two-photon laser testing is performed to extract technological information such as the memory array organization and an estimation of the cell size. SEE laser energy thresholds are compared as well as the impact of the applied power mode. Bitline upsets are experimentally observed and confirmed by an analysis based on Monte-Carlo simulations. Heavy-ion testing results, including various kinds of SEFIs, are presented and discussed. [ABSTRACT FROM PUBLISHER]

Instead of using encapsulated sensitive volumes to simulate charge collection during single event upset (SEU) mechanism, we use continuous variation of the charge collection in the device. Basically, the collection efficiency is equal to 1 in the core of the sensitive volume and decreases outside. Assuming that the collection efficiency decreases as a power law of the distance, we analytically find that heavy ion SEU cross-section follows a power law of the linear energy transfer (LET). Results are in agreement with a set of various experimental data from 250nm to 28nm. We also show that experimental results allow extracting technological parameters of the sensitive volume as well as the threshold LET, which is a feature of the device. [ABSTRACT FROM PUBLISHER]

The possibility to evaluate simultaneously the total ionizing dose and the displacement damage dose using a single OSL integrated sensor is demonstrated. Results obtained during the real time monitoring of both proton and electron beams are presented. [ABSTRACT FROM AUTHOR]

This paper investigates the sensitivity of bulk technologies in the terrestrial neutron environment as a function of technology scaling. Their sensitivity is analyzed with both experiments and Monte Carlo simulations. The soft error rate (SER) of future technology generations is extrapolated, analyzed and discussed on the basis of different parameters such as the interaction volume, the secondary ion species and the incident neutron energy ranges. [ABSTRACT FROM AUTHOR]

Presents a study that assessed the results of proton irradiation in a commercial off-the-shelf charge-coupled device (CCD). Investigation of the mean dark current of the CCD; Examination of the mean dark-current function of non-ionizing energy loss; Analysis of the appearance of dark-signal nonuniformity pixel to pixel after proton irradiation.