537 results on '"Lu, Zhong‐Yi"'
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352. Electronic structure ofFe1.04Te0.66Se0.34
353. Affordance Information Retrieval in Text Comprehension
354. Electronic structures of ternary iron arsenides AFe2As2 (A = Ba, Ca, or Sr)
355. πJunction to Probe Antiphases-Wave Pairing in Iron Pnictide Superconductors
356. First-Principles Calculations of the Electronic Structure of Tetragonalα-FeTe andα-FeSe Crystals: Evidence for a Bicollinear Antiferromagnetic Order
357. Publisher's Note: Arsenic-bridged antiferromagnetic superexchange interactions in LaFeAsO [Phys. Rev. B78, 224517 (2008)]
358. Arsenic-bridged antiferromagnetic superexchange interactions in LaFeAsO
359. Iron-based layered compound LaFeAsO is an antiferromagnetic semimetal
360. Multichannel interaction mechanism in a molecule-metal interface
361. PROTECTIVE EFFECT OF N -ACETYLCYSTEINE ON HYPEROXIA-INDUCED LUNG INJURY AND ITS INTERACTION WITH P38 MITOGEN-ACTIVATED PROTEIN KINASE SIGNALING PATHWAY
362. Ji, Lu, and Gao Reply
363. Electron Core-Hole Interaction and Its Induced Ionic Structural Relaxation in Molecular Systems under X-Ray Irradiation
364. First-Principles Theory of Quantum Well Resonance in Double Barrier Magnetic Tunnel Junctions
365. First-principles theory of tunneling currents in metal-oxide-semiconductor structures
366. A first-principles study of Group IV dimer chains on Si(100)
367. Spin-Dependent Resonant Tunneling through Quantum-Well States in Magnetic Metallic Thin Films
368. Mixed PbSi dimer chains on Si(100): a first-principles study
369. Erratum: Structure, Properties, and Dynamics of Oxygen Vacancies in AmorphousSiO2[Phys. Rev. Lett.PRLTAO0031-900789, 285505 (2002)]
370. First-principles studies of structures and stabilities of Pb/Si(111)
371. Self-Intercalated 1T-FeSe2as an Effective Kagome Lattice
372. Structure, Properties, and Dynamics of Oxygen Vacancies in AmorphousSiO2
373. Mixed SiGe ad-dimer on Si(001): diffusion triggers intermixing
374. Unique Dynamic Appearance of a Ge-Si Ad-dimer on Si(001)
375. Correlated piecewise diffusion of a Ge ad-dimer on the Si(001) surface
376. Structures and dynamical properties ofCn,Sin,Gen,andSnnclusters withnup to 13
377. Structures of Germanium Clusters: Where the Growth Patterns of Silicon and Germanium Clusters Diverge
378. Ionization of medium-sized silicon clusters and the geometries of the cations
379. Dissociation Energies of Silicon Clusters: A Depth Gauge for the Global Minimum on the Potential Energy Surface
380. Atomic and electronic structure of ideal and reconstructedα-Sn (100) surfaces
381. Atomic and electronic structure of ideal and reconstructed α-Sn (111) surface
382. Impurity energy level in the Haldane gap
383. Doping Induced Quantum Bound States within the Haldane Gap
384. Haldane energy gap of a doped linear-chain Heisenberg antiferromagnet
385. The q -Deformed SU(2) Quantum Antiferromagnetic Model
386. The q -Deformed SU(2) Quantum Ferromagnetic Model
387. The Superfluidity of the Charged Bosons' System
388. Electronic structures of ternary iron arsenides AFe2As2 ( A = Ba, Ca, or Sr).
389. Mixed PbSi dimer chains on Si(1 0 0): a first-principles study
390. Distinct superconducting behaviors of pressurized WB2and ReB2with different local B layers
391. Mixed SiGe ad-dimer on Si(0 0 1): diffusion triggers intermixing
392. Author Correction: Experimental observation of bulk nodal lines and electronic surface states in ZrB2.
393. Experimental observation of bulk nodal lines and electronic surface states in ZrB2.
394. Antiperovskite Chalco-Halides Ba3(FeS4)Cl, Ba3(FeS4)Br, and Ba3(FeSe4)Br with Spin Super-Super Exchange.
395. Realization of multiple topological states and topological phase transitions in (4,0) carbon nanotube derivatives.
396. Degenerate antiferromagnetic states in spinel oxide LiV2O4.
397. Self-Intercalated 1T-FeSe 2 as an Effective Kagome Lattice.
398. A two-dimensional topological nodal-line material MgN 4 with extremely large magnetoresistance.
399. Quasi-degenerate magnetic states in α-RuCl 3 .
400. The melilite-type compound [Formula: see text] (A = K, La) being a room temperature ferromagnetic semiconductor.
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