351. RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach–Zehnder Modulator
- Author
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Gyungock Kim, Jong-Moo Lee, Jong-Bum You, and Jeong-Woo Park
- Subjects
Materials science ,Silicon ,business.industry ,Photonic integrated circuit ,Electro-optic modulator ,Silicon on insulator ,chemistry.chemical_element ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Optics ,chemistry ,Modulation ,Optoelectronics ,Time domain ,Radio frequency ,Electrical and Electronic Engineering ,business ,Diode - Abstract
We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a VpiLpi of 1.88times10-2Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO3-based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.
- Published
- 2008