1,322 results on '"Godlewski, M"'
Search Results
352. Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
353. Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy - Growth and Characterization
354. Investigation of Photoelectric Properties of ZnSe:Cr and ZnTe:V:Al by Picosecond Four-Wave Mixing Technique
355. Optically Pumped Mid-Infrared Stimulated Emission of ZnSe:Cr Crystals
356. Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy
357. Spin-dependent recombination processes in wide band gap II-Mn-VI compounds
358. Monocrystalline ZnO Films on GaN/Al2O3 by Atomic Layer Epitaxy in Gas Flow
359. Spin dependent and nonlinear effects in ZnCrSe and ZnCrTe
360. X‐ray, photo‐ESR and optical spectroscopy studies of ZnSxSe1−x solid solutions doped with Co
361. Diffusion length of carriers and excitons in GaN—influence of epilayer microstructure
362. Luminescent properties of wide bandgap materials at room temperature
363. Compensation mechanisms in magnesium doped GaN
364. Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers
365. In-depth and in-plane profiling of light emission properties of InGaN-based laser diode
366. Atomic layer deposition of thin films of ZnSe—structural and optical characterization
367. Optical and magnetic resonance investigations of ZnO crystals doped with TM ions
368. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
369. Electronic Structure of ZnS:Co Semiconductors: X-ray and Optical Spectroscopy Studies
370. Microwave-Induced Delocalization of Excitons in Ternary Compounds of II-VI and III-V Semiconductors
371. Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction
372. Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
373. Role of Auger-Type Energy Transfer Processes in Quenching of Anti-Stokes Emission in Chromium and Iron Doped ZnSe: ODMR, Optical and Time-Resolved Study
374. Origin of white color light emission in ALE-grown ZnSe
375. Preface: phys. stat. sol. (c) 0/2
376. Nanoparticles doped with rare earth and transition metal ions for optoelectronic applications.
377. Ultralow threshold powers for optical pumping of homoepitaxial InGaN/GaN/AlGaN lasers
378. Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
379. Spin Relaxation Processes in Quantum Well Structures of Cd1-xMnxTe/Cd1-xMgxTe
380. Mn2+ intra-shell recombination in bulk and quantum dots of II–VI compounds
381. Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation
382. Spin Selection Rules in Radiative and Nonradiative Recombination Processes in Bulk Crystals and in Thin Films of II-VI Compounds
383. Interaction of Microwave Heated Hot Carriers with Recombination Centers
384. Blue Anti-Stokes Emission in Chromium and Iron Doped Wide Band Gap II-VI Compounds
385. Influence of Structural Properties and of Growth Conditions on Exciton Properties in ZnCdSe/ZnSe Quantum Well Structures
386. In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers
387. Excitation mechanism of blue anti-Stokes and 2.4μm infrared emission in ZnSe:Cr
388. Cathodoluminescence Investigations of Interfaces in InGaN/GaN/Sapphire Structures
389. Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN
390. Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films
391. Mechanism of Radiative Mn2+Intra-Shell Recombination in Bulk ZnMnS
392. Optical and Structural Properties of Thin Films of ZnS Grown by Atomic Layer Epitaxy
393. Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
394. Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system
395. Effects of localization in CdTe-based quantum well structures
396. Role of localization effects in GaN and InGaN
397. Thin films of wide band gap II-VI compounds grown by atomic layer epitaxy-properties and application
398. Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
399. Light emitters fabricated on bulk GaN substrates. Challenges and achievements.
400. Atomic layer epitaxy of ZnO for substrates for GaN epitaxy.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.