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201. Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature.

203. Channel width dependent subthreshold operation of tri-gate junctionless transistors.

204. Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs.

205. Statistical charge-based modeling of 1/f noise in standard and high-voltage MOS transistors

206. Nanodevices Tend to Be Round.

207. Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing.

208. Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy.

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