251. Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths.
- Author
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Romero-García S, Merget F, Zhong F, Finkelstein H, and Witzens J
- Subjects
- Equipment Design, Equipment Failure Analysis, Photons, Systems Integration, Refractometry instrumentation, Semiconductors, Silicon Compounds chemistry, Surface Plasmon Resonance instrumentation
- Abstract
Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained.
- Published
- 2013
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