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Intersubband transitions and quantum cascade lssers

Supervisor:片山信一教授, マテリアルサイエンス研究科, 博士

Considering the Coulomb many-body interactions, we theoretically investigate the terahertz optical gain spectrum in an asymmetric step quantum well by employing the intersubband semiconductor-Bloch equations (SBEs). We show the effects of various many-body interactions on the THz gain spectrum. Because of the pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted. The dependence of optical gain on electron density, temperature is also explored in detail. © 2009 SPIE.

We investigate the conduction intersubband linear response of a n-type quantum well driven by one or two infrared optical fields with arbitrary strengths. The fields couple the third subband to the second energy subband and the ground subband, forming a A system. We investigate the dependences of the absorption spectrum on the pump field strengths. The results for the equal Rabi frequencies can be understood in terms of quantum coherence processes of the intersubband transitions, such as coherent population trapping, and electromagnetically induced transparency. The effects of different Rabi frequencies on the absorption spectrum due to fields are also discussed. © 2009 SPIE.

This seminar gives an overview on our recent experimental studies involving ps and fs lasers, including the free-electron laser at FZD. In particular, I briefly discuss nonlinear sideband spectroscopy and time-resolved photoluminescence. Then I will focus on quadratic photocurrent autocorrelation involving intersubband transitions in semiconductor quantum wells at mid-infrared wavelengths, and present our concept for scalable photoconductive Terahertz emitters.

This talk summarizes our activities in nonlinear laser spectroscopy using the free-electron laser at FZD and tabletop lasers. Our research concentrates on III-V semiconductor quantum wells and superlattices. In particular, I will focus on pump-probe spectroscopy, two-photon absorption, and photocurrent autocorrelation involving intersubband transitions in quantum wells at mid-infrared wavelengths, and discuss a concept for scalable photoconductive Terahertz emitters.

We report on two-photon detection based on quantum well intersubband nonlinear absorption. Three equidistant subbands, two of which are bound in the quantum well, and the third one in the continuum, result in a resonantly enhanced optical nonlinearity, which is by six orders of magnitude stronger than in usual semiconductors [1]. This device is very promising for quadratic autocorrelation measurements of pulsed mid-infrared sources, including modelocked quantum cascade lasers, radiation obtained by nonlinear optical frequency conversion, and free-electron lasers (FEL). Using these detectors as a quadratic autocorrelator for mid-infrared pulses, temporal resolution is only limited by the sub-ps intrinsic time constants of the intersubband transitions, namely the intersubband relaxation time and the phase relaxation time. We have investigated the performance of devices operating at various wavelengths from the mid-infrared to the Terahertz regimes using ps optical pulses from the FEL at the Forschungszentrum Dresden Rossendorf. In particular, device operation at shorter wavelengths around 5.5 µm is still possible at room temperature, which is crucial for applications in practical systems. [1] H. Schneider, T. Maier, H. C. Liu, M. Walther, and P. Koidl, Optics Lett. 30, 287 (2005).

We have studied electron intersubband relaxation and dephasing in n-type InGaAs/AlGaAs quantum wells by femtosecond two-photon photocurrent spectroscopy using mid-infrared pulses of 165 fs duration. The approach enables us to determine systematically the dependence of these time constants on structural parameters, including carrier density and modulation/well doping, and to discriminate between different scattering processes [1]. By varying the excitation energy, we also tuned the two-photon transition from resonant, yielding optimum resonant enhancement with a real intermediate state, to nearly-resonant, with a virtual but resonantly enhanced intermediate state [2]. For autocorrelation purposes, the latter configuration improves time resolution whilst partially retaining a resonant enhancement of the two-photon transition strength. [1] H. Schneider, T. Maier, M. Walther, H. C. Liu, Appl. Phys. Lett. 91, 191116 (2007). [2] H. Schneider, T. Maier, H. C. Liu, M. Walther, Opt. Express 16, 1523 (2008).

Quantum well infrared photodetectors (QWIPs) provide unique opportunities for high-performance thermal imaging. Due to their narrow absorption bands with relative spectral widths of the order of 10%, QWIPs are particularly suitable for thermal imaging applications involving several atmospheric transmission bands or several colors within the same band. For dual-band/dual-color FPAs, QWIP technology has the unique property that the active region for the long-wavelength band is transparent for the short-wavelength band. Narrow intersubband transition linewidths also enable us to enhance resonantly the cross section for two-photon-absorption by several orders of magnitude. This approach results in particularly sensitive quadratic two-photon detectors, which are useful for pulse diagnostics and photon correlation measurements of mid-infrared laser sources. In the first part of this talk, I will report on QWIP structures optimized for thermal imaging applications and on the performance of QWIP thermal imagers which were jointly realized by the Fraunhofer-Institute for Applied Solid State Physics (Freiburg, Germany) and AIM Infrarot-Module GmbH (Heilbronn, Germany). In particular, a dual-band QWIP FPA with 384x288 pixels detecting simultaneously in the 8 – 12 µm long-wavelength infrared (LWIR) and 3 – 5 µm mid-wavelength infrared (MWIR) regimes was found to exhibit a noise-equivalent temperature difference as low as 20.6 mK in the LWIR and 26.7 mK in the MWIR spectral bands. The array, which is based on a photoconductive QWIP for the MWIR and a photovoltaic "low-noise" QWIP for the LWIR, allows for synchronous and pixel-registered image acquisition in both bands. This functionality yields several advantages, including better distinction between target and background clutter, operation in a much wider range of ambient conditions, and the ability of remote absolute temperature measurement. The second part of my talk will address quadratic detection involving two-photon trans

We investigate nonlinear mid-infrared detection via two-photon transitions involving two bound subbands and one continuum resonance in an n-type multiple quantum well. By varying the excitation energy, we have tuned the two-photon transition from resonant, yielding optimum resonant enhancement with a real intermediate state, to nearly-resonant, with a virtual but resonantly enhanced intermediate state. For autocorrelation purposes, the latter configuration improves time resolution whilst partially retaining a resonant enhancement of the two-photon transition strength.

Quantum wells comprising three equidistant subbands, two of which are bound in the well and the third one in the continuum, result in a resonantly enhanced coefficient for two-photon absorption, which is by six orders of magnitude stronger than in usual semiconductors. Exploiting this nonlinearity in two-photon detectors, quadratic autocorrelation of a free-electron laser has recently been demonstrated at room temperature [1]. Temporal resolution of such a two-photon autocorrelator is only limited by the sub-ps intrinsic time constants of the intersubband transition, namely the intersubband relaxation time and the phase relaxation time. Using sub-ps mid-infrared pulses, the approach allows us to determine systematically the dependence of these time constants on structural parameters, and to discriminate between different scattering processes [2]. [1] H. Schneider, H. C. Liu, S. Winnerl, O. Drachenko, M. Helm, J. Faist, Appl. Phys. Lett. 93, 101114 (2008). [2] H. Schneider, T. Maier, M. Walther, H. C. Liu, Appl. Phys. Lett. 91, 191116 (2007).

The characteristics of intersubband transitions in III-nitride quantum wells are promising for detectors and all-optical switches through a high intrinsic speed (similar to 1 THz), and can also provide a high optical saturation power and a desired small negative chirp parameter in electroabsorption modulators. The high LO-phonon energy allows to improve the operating temperature of THz emitters. Recent achievements and prospects for intersubband III-nitride photonic devices, mainly for lambda=1.55 mu m, are briefly reviewed. Further, means to enhance material quality by achieving crack-free growth of GaN/AlN multiple-quantum-well (MQW) structures, and by employing intersubband transitions in multiple-quantum-disk (MQD) structures incorporated into dislocation free GaN nanocolumns are discussed. We investigate the occurrence of cracks in MBE-grown GaN/AlN MQWs on GaN MOVPE templates with respect to the buffer layer, the number of QWs and the temperature reduction rate after growth. Intersubband absorption in GaN/AlN MQDs in the wavelength range 1.38-1.72 mu m is demonstrated in three samples grown on Si(111).

The impact of indium segregation and diffusion of antimony on intersubband transition (IST) wavelengths in AlAsSb/GaInAs multiple quantum well (MQW) and double quantum well (DQW) structures has been evaluated. By means of 8-band k·p calculations the effect of non-abrupt interfaces on IST wavelengths in such structures is elucidated. Comparison of measured and calculated absorption spectra reveals the sacrificial character of AlAs interfacial layers for diffused or segregated atoms and allows for estimating the limits of the intersubband approach as regards short wavelength relaxation transitions.

Intersubband optical transitions at short wavelengths in strain-compensated In0.70Ga0.30As—AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55 µm, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2–4 µm. Significant oscillator strength, however, also extends out to 800 meV, 1.55 µm.

The overall objective of this project is to develop a commercial quality, validated computer aided design (CAD) tool, THz quantum based semiconductor devices. THz device design must account for quantum effects such as quantum resonant modes, quantum mode mixing, tunneling, intersubband transitions, side wall scattering, and surface recombination. Currently, there are no CAD tools available that incorporate all the proper physics for designing THz quantum devices. The proposed quantum CAD tool will be a device simulator with the ability to investigate the operation of and generate reduced models (S-parameters) for quantum based, electronic and photonic THz sources and detectors such as quantum cascade lasers, superlattices, and multiple quantum wells., S. J. Allen, R. C. Bowen, R. Lake. Prepared in collaboration with Jet Propulsion Laboratory, University of California, Santa Barbara, Texas Instruments and University of California, Riverside.

We have studied the interminiband absorption and the current-voltage characteristics on the same GaAs/AlGaAs superlattices. The Esaki-Tsu type negative differential resistance is observed as well as the thermal (de)population of the minibands. The possibility of mapping the nonequilibrium electron distribution function through infrared absorption measurements under bias is discussed.