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1,483 results on '"Vandervorst, W."'

305. Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Author

Gencarelli, F., primary, Vincent, B., additional, Demeulemeester, J., additional, Vantomme, A., additional, Moussa, A., additional, Franquet, A., additional, Kumar, A., additional, Bender, H., additional, Meersschaut, J., additional, Vandervorst, W., additional, Loo, R., additional, Caymax, M., additional, Temst, K., additional, and Heyns, M., additional

Published
2013
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308. Advanced carrier depth profiling on Si and Ge with M4PP

Author

Clarysse, T., Eyben, P., Parmentier, B., Van Daele, B., Satta, A., Vandervorst, W., Lin, Rong, Petersen, Dirch Hjorth, Nielsen, Peter Folmer, Clarysse, T., Eyben, P., Parmentier, B., Van Daele, B., Satta, A., Vandervorst, W., Lin, Rong, Petersen, Dirch Hjorth, and Nielsen, Peter Folmer

Published
2007

312. Sub-10nm low current resistive switching behavior in hafnium oxide stack.

Author

Hou, Y., Celano, U., Goux, L., Liu, L., Fantini, A., Degraeve, R., Youssef, A., Xu, Z., Cheng, Y., Kang, J., Jurczak, M., and Vandervorst, W.

Subjects
ELECTRIC properties of hafnium oxide, RANDOM access memory, ELECTRIC resistance, STRAY currents, ATOMIC force microscopy
Abstract

In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50×50 nm2 device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design. [ABSTRACT FROM AUTHOR]

Published
2016
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313. The analysis of a thin SiO2/Si3N4/SiO2 stack: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering, and secondary ion mass spectrometry

Author

Brijs, B, Sajavaara, T, Giangrandi, S, Janssens, T, Conard, T, Arstila, K, Nakajima, K, Kimura, K, Bergmaier, A, Dollinger, G, Vantomme, A, Vandervorst, W, Brijs, B, Sajavaara, T, Giangrandi, S, Janssens, T, Conard, T, Arstila, K, Nakajima, K, Kimura, K, Bergmaier, A, Dollinger, G, Vantomme, A, and Vandervorst, W

Published
2006

314. The analysis of a thin SiO2/Si3N4/SiO2 stack: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering, and secondary ion mass spectrometry

Author

80293885, 50127073, Brijs, B, Sajavaara, T, Giangrandi, S, Janssens, T, Conard, T, Arstila, K, Nakajima, K, Kimura, K, Bergmaier, A, Dollinger, G, Vantomme, A, Vandervorst, W, 80293885, 50127073, Brijs, B, Sajavaara, T, Giangrandi, S, Janssens, T, Conard, T, Arstila, K, Nakajima, K, Kimura, K, Bergmaier, A, Dollinger, G, Vantomme, A, and Vandervorst, W

Published
2006

315. Electrical Characterization of Submicrometer Silicon Devices by Cross-Sectional Contact Mode Atomic Force Microscopy

Author

De Wolf, P., Trenkler, T., Clarysse, T., Caymax, M., Vandervorst, W., Snauwaert, J. J., and Hellemans, L.

Subjects
potentiometry, Atomic force microscopy (AFM), dopant profiling, spreading resistance profiling (SRP), Biology, carrier profiling
Abstract

Two contact mode atomic force microscopic (AFM) techniques under ambient conditions are presented for the electrical evaluation of cross sectioned silicon devices. In the first technique, a conductive AFM tip is used as a voltage probe to determine the local potential distribution on the cross section of a silicon device under operation. The electrical potential is measured simultaneously with the surface topography with nanometer resolution and mV accuracy, offering an easy way of correlating topographic and electrical features. A second method, nanometer spreading resistance profiling (nano-SRP), performs localized spreading resistance measurements to determine the spatial distribution of charge carriers in silicon structures. The conversion of the resistance profiles into charge carrier profiles as well as the applied correction factors are discussed in more detail. Both methods are used to map electrical characteristics of state-of-the-art silicon structures.

Published
1996

316. Interpretation of TOF-SIMS depth profiles from ultrashallow high-K dielectric stacks assisted by hybrid collisional computer simulation

Author

Ignatova, V. A., Möller, W., Conard, T., Vandervorst, W., Gijbels, R., Ignatova, V. A., Möller, W., Conard, T., Vandervorst, W., and Gijbels, R.

Abstract

The TRIDYN collisional computer simulation has been modified to account for emission of ionic species and molecules during sputter depth profiling, by introducing a power law dependence of the ion yield as a function of the oxygen surface concentration, and by modelling the sputtering of monoxide molecules. The results are compared to experimental data obtained with dual beam TOF-SIMS depth profiling of ZrO2/SiO2/Si high-k dielectric stacks with thicknesses of the SiO2 interlayer of 0.5, 1, and 1.5 nm. Reasonable agreement between experiment and computer simulation is obtained for most of the experimental features, demonstrating the effects of ion-induced atomic relocation, i.e. atomic mixing and recoil implantation, and preferential sputtering. The depth scale of the obtained profiles is significantly distorted by recoil implantation and the depth-dependent ionization factor. A pronounced double peak structure in the experimental profiles related to Zr is not explained by the computer simulation, and is attributed to ion-induced bond breaking and diffusion, followed by a decoration of the interfaces by either mobile Zr or O.

Published
2005

317. Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

Author

Vandervorst, W., Janssens, T., Brijs, B., Delhougne, R., Loo, R., Caymax, M., Pawlak, B. J., Posselt, M., Vandervorst, W., Janssens, T., Brijs, B., Delhougne, R., Loo, R., Caymax, M., Pawlak, B. J., and Posselt, M.

Abstract

The formation of a thin strained Si layer on top of a strain-relaxed SiGe buffer is a recent approach to improve the drive current of complementary metal-oxide-semiconductor devices by inducing strain within the transistor channel. At the same time, advanced process technologies require junction formation processes with minimal diffusion and very high dopant activation. Solid-phase epitaxial regrowth is a low temperature process based on preamorphization and subsequent regrowth leading to highly activated and shallow junctions. In this letter, we investigate the stability of the thin strained Si layer, during solid-phase epitaxial regrowth process by monitoring the Ge redistribution/strain after the preamorphization step (without any anneal) and after the thermal regrowth process.

Published
2005

318. Ge1-xSnxMaterials: Challenges and Applications

Author

Loo, R., primary, Vincent, B., additional, Gencarelli, F., additional, Merckling, C., additional, Kumar, A., additional, Eneman, G., additional, Witters, L., additional, Vandervorst, W., additional, Caymax, M., additional, Heyns, M., additional, and Thean, A., additional

Published
2012
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319. Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Author

Eneman, G., primary, Brunco, D. P., additional, Witters, L., additional, Vincent, B., additional, Favia, P., additional, Hikavyy, A., additional, De Keersgieter, A., additional, Mitard, J., additional, Loo, R., additional, Veloso, A., additional, Richard, O., additional, Bender, H., additional, Lee, S. H., additional, Van Dal, M., additional, Kabir, N., additional, Vandervorst, W., additional, Caymax, M., additional, Horiguchi, N., additional, Collaert, N., additional, and Thean, A., additional

Published
2012
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322. Towards the Monolithic Integration of III-V Compound Semiconductors on Si: Selective Area Growth in High Aspect Ratio Structures vs. Strain Relaxed Buffer-Mediated Epitaxy

Author

Cantoro, M., primary, Merckling, C., additional, Jiang, S., additional, Guo, W., additional, Waldron, N., additional, Bender, H., additional, Moussa, A., additional, Douhard, B., additional, Vandervorst, W., additional, Heyns, M. M., additional, Dekoster, J., additional, Loo, R., additional, and Caymax, M., additional

Published
2012
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323. Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

Author

Horiguchi, N., primary, Zschaetzsch, G., additional, Sasaki, Y., additional, Kambham, A. K., additional, Togo, M., additional, Ragnarsson, L.-Å., additional, Mitard, J., additional, Franco, J., additional, Eneman, G., additional, Hellings, G., additional, Witters, L., additional, Romeo, T., additional, Pantisano, L., additional, Waldron, N., additional, Lin, D., additional, Collaert, N., additional, Vandervorst, W., additional, and Thean, A., additional

Published
2012
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328. Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Author

Pawlak, M. A., primary, Swerts, J., additional, Popovici, M., additional, Kaczer, B., additional, Kim, M.-S., additional, Wang, W.-C., additional, Tomida, K., additional, Govoreanu, B., additional, Delmotte, J., additional, Afanas’ev, V. V., additional, Schaekers, M., additional, Vandervorst, W., additional, and Kittl, J. A., additional

Published
2012
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331. Atom Probe Tomography for 3D-dopant analysis in FinFET devices

Author

Kambham, Ajay Kumar, primary, Zschaetzsch, G., additional, Sasaki, Y., additional, Togo, M., additional, Horiguchi, N., additional, Mody, J., additional, Florakis, A., additional, Gajula, D.R., additional, Kumar, A., additional, Gilbert, M., additional, and Vandervorst, W., additional

Published
2012
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334. On the rseries extraction techniques for sub-22nm CMOS finfet and SiGe technologies

Author

Pantisano, Luigi, primary, Zschaetzsch, G., additional, Hellings, G., additional, Krom, R., additional, Lee, S.-H, additional, Ritzenthaler, R., additional, Mitard, J., additional, Eneman, G., additional, Roussel, P. J., additional, Chiarella, T., additional, Ragnarsson, L.-A, additional, Togo, M., additional, Vandervorst, W., additional, Groeseneken, G., additional, Thean, A., additional, and Horiguchi, N., additional

Published
2012
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335. Challenges for introducing Ge and III/V devices into CMOS technologies

Author

Heyns, M., primary, Alian, A., additional, Brammertz, G., additional, Caymax, M., additional, Eneman, G., additional, Franco, J., additional, Gencarelli, F., additional, Groeseneken, G., additional, Hellings, G., additional, Hikavyy, A., additional, Houssa, M., additional, Kaczer, B., additional, Lin, D., additional, Loo, R., additional, Merckling, C., additional, Meuris, M., additional, Mitard, J., additional, Nyns, L., additional, Sioncke, S., additional, Vandervorst, W., additional, Vincent, B., additional, Waldron, N., additional, and Witters, L., additional

Published
2012
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342. Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

Author

Kluth, S. M., Álvarez, D., Trellenkamp, St., Moers, J., Mantl, S., Kretz, J., Vandervorst, W., Kluth, S. M., Álvarez, D., Trellenkamp, St., Moers, J., Mantl, S., Kretz, J., and Vandervorst, W.

Abstract

B implants of 1keV, 1×10¹⁵at.cm⁻² into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistancemicroscopy following a 0s, 1050°Canneal in N₂. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

Published
2004

343. Errors in near-surface and interfacial profiling of boron and arsenic

Author

Vandervorst, W, Janssens, T, Brijs, B, Conard, T, Huyghebaert, C, Fruhauf, J, Bergmaier, A, Dollinger, G, Buyuklimanli, T, VandenBerg, JA, Kimura, K, Vandervorst, W, Janssens, T, Brijs, B, Conard, T, Huyghebaert, C, Fruhauf, J, Bergmaier, A, Dollinger, G, Buyuklimanli, T, VandenBerg, JA, and Kimura, K

Published
2004

344. Errors in near-surface and interfacial profiling of boron and arsenic

Author

50127073, Vandervorst, W, Janssens, T, Brijs, B, Conard, T, Huyghebaert, C, Fruhauf, J, Bergmaier, A, Dollinger, G, Buyuklimanli, T, VandenBerg, JA, Kimura, K, 50127073, Vandervorst, W, Janssens, T, Brijs, B, Conard, T, Huyghebaert, C, Fruhauf, J, Bergmaier, A, Dollinger, G, Buyuklimanli, T, VandenBerg, JA, and Kimura, K

Published
2004

347. 3D-carrier profiling in FinFETs using scanning spreading resistance microscopy

Author

Mody, J., primary, Zschatzsch, G., additional, Kolling, S., additional, De Keersgieter, A., additional, Eneman, G., additional, Kambham, A K, additional, Drijbooms, C., additional, Schulze, A., additional, Chiarella, T., additional, Horiguchi, N., additional, Hoffmann, T-Y, additional, Eyben, P., additional, and Vandervorst, W., additional

Published
2011
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348. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Author

Vincent, B., primary, Gencarelli, F., additional, Bender, H., additional, Merckling, C., additional, Douhard, B., additional, Petersen, D. H., additional, Hansen, O., additional, Henrichsen, H. H., additional, Meersschaut, J., additional, Vandervorst, W., additional, Heyns, M., additional, Loo, R., additional, and Caymax, M., additional

Published
2011
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350. Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

Author

Vincent, B., primary, Loo, R., additional, Vandervorst, W., additional, Delmotte, J., additional, Douhard, B., additional, Valev, V.K., additional, Vanbel, M., additional, Verbiest, T., additional, Rip, J., additional, Brijs, B., additional, Conard, T., additional, Claypool, C., additional, Takeuchi, S., additional, Zaima, S., additional, Mitard, J., additional, De Jaeger, B., additional, Dekoster, J., additional, and Caymax, M., additional

Published
2011
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