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Abstract: Reservoir computing is a new paradigm for using recurrent neural network with a much simpler training method. The key idea is to use a large but fixed recurrent part as a reservoir of dynamic features and to train only the output layer to extract the desired information. We propose to study how pruning some connections from the reservoir to the output layer can help on the one hand to increase the generalization ability, in much the same way as regularization techniques do, and on the other hand to improve the implementability of reservoirs in hardware. [Copyright &y& Elsevier]

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. [ABSTRACT FROM AUTHOR]

Highly P doped Ge layers are proposed as a material to realize an on-chip laser for optical interconnect applications. In this work, we demonstrate that these donor impurities have a dramatic impact on the excess carrier lifetime and introduce detrimental many-body effects such as linewidth broadening in the gain medium. Linewidth broadening Γopt = 10 meV for undoped Ge and Γopt ≥ 45 meV for Ge with a doping level up to 5.4 × 1019 cm−3 were extracted using photoluminescence spectroscopy and pump-probe spectroscopy. In addition, we observed that the excess carrier lifetime (τc) drops by more than an order of magnitude from 3 ns in undoped Ge to <0.3 ns in doped Ge. [ABSTRACT FROM AUTHOR]

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL. [ABSTRACT FROM AUTHOR]

Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers strongly depend on the thickness and width of the waveguide due to defect assisted surface recombination. Interface recombination velocities of 0.975×104 cm/s and 1.45×104 cm/s were extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively. [ABSTRACT FROM AUTHOR]

Abstract: Today''s construction industry relies heavily on high-performing building information modelling (BIM) systems. By deploying the Industry Foundation Classes (IFC) as a description language, these systems offer building information in a widely interoperable format, so that several applications are able to infer extra information. For a certain functionality, IFC shows limitations however. Existing semantic web technology may be able to overcome these limitations, thereby enabling a range of significant improvements and possibilities for automation in building design and construction. This paper gives a short overview of the functionality of IFC as a language, compared to the functionality of languages deployed in the semantic web domain. The improvements generated by deploying semantic web languages are briefly discussed, after which a concrete implementation approach is presented for a semantic rule checking environment for building design and construction. An implemented test case for acoustic performance checking illustrates the improvements of such an environment compared to traditionally deployed approaches in rule checking. [Copyright &y& Elsevier]

Abstract: Reconfigurable interconnection networks have been shown to benefit performance in distributed shared-memory multiprocessor machines. Usually, performance measurements for these networks require large numbers of slow full-system simulations, making design-space exploration a cumbersome and time-consuming task. In this paper, we present a prediction model for the performance of a reconfigurable network, based on a single full-system simulation and a much shorter, per parameter set post-processing phase. We provide simulation results establishing the relative accuracy of the technique and analyze the impact of several assumptions that were made. With our method, a quick evaluation of a large range of parameters is now possible, allowing the designer to make well-founded design trade-offs. [Copyright &y& Elsevier]

We present a semi-analytical model that can accurately explain the working principle behind the recently reported electrically injected In 0.2 Ga 0.8 As/GaAs monolithic nano-ridge lasers and more importantly show how the model can be used to study the effect of device parameters on the spectral behavior, the slope efficiency and the threshold gain. We show that mode beating between the fundamental mode and a higher order mode is fundamental in the operation of these lasers. Analytical expressions for codirectional mode coupling are used in developing the round-trip laser model. Results from analytical expressions are verified by comparisons with simulations and the model is supported later by measurement results.

Background: Myalgic encephalomyelitis/chronic fatigue syndrome (ME/CFS) and fibromyalgia (FM) are comorbid disorders with overlapping symptoms. Research highlights autonomic dysfunction compared to healthy individuals, particularly involving the sympathetic branch. While past reviews focused on neurophysiological assessments, this systematic review summarises biological adrenergic markers, offering deeper insights into the observed sympathetic dysfunction in ME/CFS and FM aiming to identify targetable pathophysiological mechanisms., Methods: A systematic search was performed on PubMed, Web of Science, Embase and Scopus. Studies investigating peripheral biological markers of adrenergic function in patients with ME/CFS or FM compared to healthy controls at baseline were included. Meta-analyses were performed using R statistical software., Results: This meta-analysis of 37 studies, encompassing 543 ME/CFS patients and 651 FM patients, compared with 747 and 447 healthy controls, respectively, revealed elevated adrenaline (SMD = .49 [.31-.67]; Z = 5.29, p < .01) and β1 adrenergic receptor expression (SMD = .79 [.06-1.52]; Z = 2.13; p = .03) in blood of ME/CFS patients at rest. Additionally, patients with ME/CFS had a greater increase in the expression of α2A adrenergic receptor (AR, SMD = .57 [.18-.97]; Z = 2.85, p < .01), β2 AR (SMD = .41 [.02-.81]; Z = 2.04; p = .04) and COMT (SMD = .42 [.03-.81]; Z = 2.11; p = .03) after exercise and an increased response of noradrenaline to an orthostatic test (SMD = .11 [-.47 to -.70]; Z = 2.10; p = .04), both found in blood. FM patients showed no significant differences at baseline but exhibited a diminished adrenaline response to exercise (SMD = -.79 [-1.27 to -.30]; Z = -3.14; p < .01)., Conclusion: This systematic review and meta-analysis revealed adrenergic dysfunction mainly in patients with ME/CFS. Higher baseline adrenaline levels and atypical responses to exercise in ME/CFS indicate that sympathetic dysfunction, underscored by adrenergic abnormalities, is more involved in the pathophysiology of ME/CFS rather than FM., (© 2024 Stichting European Society for Clinical Investigation Journal Foundation. Published by John Wiley & Sons Ltd.)

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world 1-6 . However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon 7-12 , monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p-i-n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond., Competing Interests: Competing interests: The authors declare no competing interests., (© 2025. The Author(s), under exclusive licence to Springer Nature Limited.)

Chronic pain is the most prevalent disease worldwide, leading to substantial disability and socioeconomic burden. Therefore, it can be regarded as a public health disease and major challenge to scientists, clinicians and affected individuals. Behavioral lifestyle factors, such as, physical (in)activity, stress, poor sleep and an unhealthy diet are increasingly recognized as perpetuating factors for chronic pain. Yet, current management options for patients with chronic pain often do not address lifestyle factors in a personalized multimodal fashion. This state-of-the-art clinical perspective aims to address this gap by discussing how clinicians can simultaneously incorporate various lifestyle factors into a personalized multimodal lifestyle intervention for individuals with chronic pain. To do so the available evidence on (multimodal) lifestyle interventions targeting physical (in)activity, stress, sleep and nutritional factors, specifically, was reviewed and synthetized from a clinical point of view. First, advise is provided on how to design a personalized multimodal lifestyle approach for a specific patient. Subsequently, best-evidence recommendations on how to integrate physical (in)activity, stress, sleep and nutritional factors as treatment targets into a personalized multimodal lifestyle approach are outlined. Evidence supporting such a personalized multimodal lifestyle approach is growing, but further studies are needed.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impressive modulation efficiency (0.038 dBµm -1 V -1 ) and bandwidth (≈ 16 GHz). Starting from these results, we carried out an extensive design study, focusing on three crucial design parameters and exploring the associated trade-offs in insertion loss, extinction ratio and bandwidth. The simulation results offer valuable insights into the influence of each design parameter, reaffirming that our slot waveguide platform holds great promise for realizing a high-performance EAM balancing optical and electrical performance. It is important to note that the slot waveguide was defined through standard deep ultraviolet (DUV) lithography, allowing seamless integration into high-density systems.

WA detailed thermal analysis of a hybrid, flip-chip InP-Si DFB laser is presented in this work. The lasers were experimentally tested at different operating temperatures, which allowed for deriving their thermal performance characteristics: the temperature dependence of threshold current, lasing slope, and output spectrum. Using these data, the laser thermal resistance was calculated ( R th = 75.9 K/W), which allows for predicting the laser temperature during operation. This metric is also used to validate the thermal finite element models of the laser. A sensitivity study of the laser temperature was performed using these models, and multiple routes for minimising both the laser thermal resistance and thermal coupling to the carrier die are presented. The most effective way of decreasing the laser temperature is the direct attachment of a heat sink on the laser top surface.

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.

We present a loss-coupled distributed feedback microlaser, monolithically grown on a standard 300-mm Si wafer using nano-ridge engineering. The cavity is formed by integrating a metallic grating on top of the nano-ridge. This allows forming a laser cavity without etching the III-V material, avoiding damaged interfaces and the associated carrier loss. Simulations, supported by experimental characterisation of the modal gain of the nano-ridge devices, predict an optimal duty cycle for the grating of ~0.4, providing a good trade-off between coupling strength and cavity loss for the lasing mode. The model was experimentally verified by characterising the lasing threshold and external efficiency of devices exhibiting gratings with varying duty cycle. The high modal gain and low threshold obtained prove the excellent quality of the epitaxial material. Furthermore, the low loss metal grating might provide a future route to electrical injection and efficient heat dissipation of these nanoscale devices.

To increase the manufacturing throughput and lower the cost of silicon photonics packaging, an alignment tolerant approach is required to simplify the process of fiber-to-chip coupling. Here, we demonstrate an alignment-tolerant expanded beam backside coupling interface (in the O-band) for silicon photonics by monolithically integrating microlenses on the backside of the chip. After expanding the diffracted optical beam from a TE-mode grating through the bulk silicon substrate, the beam is collimated with the aid of microlenses resulting in an increased coupling tolerance to lateral and longitudinal misalignment. With an expanded beam diameter of 32 μm, a ±7 μm lateral and a ±0.6 ° angular fiber-to-microlens 1-dB alignment tolerance is demonstrated at the wavelength of 1310 nm. Also, a large 300 μm longitudinal alignment tolerance with a 0.2 dB drop in coupling efficiency is obtained when the collimated beam from the microlens is coupled into a thermally expanded core single-mode fiber.

We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co-packaged with a silicon photonic segmented traveling-wave Mach-Zehnder modulator (MZM). The MZM is split into two traveling-wave segments to increase the bandwidth and to allow a 2-bit DAC functionality. Two limiting driver channels are used to drive these segments, allowing both NRZ and PAM4 signal generation in the optical domain. The voltage swing as well as the peaking of the driver output are tunable, hence the PAM4 signal levels can be tuned and possible bandwidth limitations of the MZM segments can be partially alleviated. Generation of 50 Gbaud and 53 Gbaud PAM4 yields a TDECQ of 2.8 and 3.8 dB with a power efficiency of 3.9 and 3.6 pJ/bit, respectively; this is the best reported efficiency for co-packaged silicon transmitters for short-reach datacenter interconnects at these data rates. With this work, we show the potential of limiting drivers and segmented traveling-wave modulators in 400G capable short-reach optical interconnects.

In Alpine regions changes in seasonal climatic parameters, such as temperature, rainfall, and snow amount have already been observed. Specifically, in the South Tyrol area, meteorological observations indicate that temperatures are increasing and the number of snow days has generally diminished over time with perennial snow line now observed at higher elevations. Changes in rainfall have also been observed with more events associated with higher temperatures in the summer season. Natural hazards - mainly debris and mud flows, landslides, avalanches, rock falls, and (flash) floods - that affect this area every year, damaging population and infrastructures, are either weather or cryosphere-related. While these events have been recorded sporadically since the beginning of the 20th century, a systematic approach of their inventory has been done by local authorities since the 1990s. So far, Earth observation data has not been exploited to complete or complement existing inventories nor have they been used to investigate the influence of climate perturbation on potentially dangerous natural phenomena. The research presented here thus has three objectives: (i) analyse long time series of climate data and hazard occurrence in South Tyrol to examine if these records exhibit a coherent response of hazards to changes in climate; (ii) measure the spatio-temporal evolution of climatic and natural hazard events recorded, and (iii) explore potential relations between meteorological conditions and the hazard occurrence. In this context, in-situ and satellite-based climate data are exploited to study natural hazard triggers while the potential of Earth observation data is evaluated as a complement to the existing historical records of natural hazards. Specifically, Copernicus Sentinel-1 images are used to detect the spatio-temporal distribution of slow earth surface deformations and the results used for checking the completeness of the actual slow-moving landslide inventories. Hazard-related changes in the South Tyrolian landscape have also been analysed in relation to particular meteorological events at a regional scale, assessing trends and anomalies. Results show that: (i) satellite data are very useful to complement the existing natural hazard inventories; (ii) in-situ and satellite-based climate records show similar patterns but differ due to regional versus local variability; (iii) even in a data-rich region such as the analysed area, the overall response of natural hazard occurrence, magnitude, and frequency to change in climate variables is difficult to decipher due to the presence of multiple triggers and locally driven ground responses. However, an increase in the average annual duration of rainfall events and debris flow occurrence can be observed.

We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4×50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of -9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.

Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable fabrication processes to demonstrate three five-channel wavelength-division multiplexing (WDM) transmitters, each based on five graphene-silicon electro-absorption modulators. A passivation-first approach is used to encapsulate graphene, which results in hysteresis-free and uniform performance across the five channels of each WDM transmitter, for a total of 15 modulators. Open-eye diagrams are obtained at 25 Gb/s using $ 2.5\;{{\rm V}&#95;{{\rm pp}}} $2.5V pp , thus demonstrating potential for multi-channel data transmission at ${5}\times {25}\;{\rm Gb/s}$5×25Gb/s on each of the three WDM transmitters.

While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 μm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.

A major problem in fruit cultivation in Flanders is replant disease due to a lack of uncultivated soils available for new plantings. Replant disease can cause poor growth and affect time to full production, however Arbuscular Mycorrhizal Fungi (AMF) can prove their usefulness with regard to these problems. To further investigate the effect of AMF on nematodes, different AMF species were amended to potted apple seedlings in the presence of the nematode Pratylenchus penetrans . Generally, apple seedlings grew better in the presence of nematodes when mycorrhiza were inoculated into the soil. Moreover, a positive correlation (R² ≥ 0.88) was found between the percentage root length colonization of the roots of apple seedlings, by AMF species, and nematode reduction in the soil of the seedlings. Indigenous AMF could colonize the roots of apple seedlings the most efficiently, resulting in a higher biocontrol effect. Besides, a synergistic effect was observed when two AMF strains were applied together leading to a significant growth response of the seedlings.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm 2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

We report an 8 × 8 silicon photonic integrated Arrayed Waveguide Grating Router (AWGR) targeted for WDM routing applications in O-band. The AWGR was designed for cyclic-frequency operation with a channel spacing of 10 nm. The fabricated AWGR exhibits a compact footprint of 700 × 270 μm 2 . Static device characterization revealed 3.545 dB maximum channel loss non-uniformity with 2.5 dB best-case channel insertion losses and 11 dB channel crosstalk, in good agreement with the simulated results. Successful data routing operation is demonstrated with 25 Gb/s signals for all 8 × 8 AWGR port combinations with a maximum power penalty of 2.45 dB.

We study the frequency chirp properties of graphene-on-silicon electro-absorption modulators (EAMs). By experimentally measuring the chirp of a 100 µm long single layer graphene EAM, we show that the optoelectronic properties of graphene induce a large positive linear chirp on the optical signal generated by the modulator, giving rise to a maximum shift of the instantaneous frequency up to 1.8 GHz. We exploit this peculiar feature for chromatic-dispersion compensation in fiber optic transmission thanks to the pulse temporal lensing effect. In particular, we show dispersion compensation in a 10Gb/s transmission experiment on standard single mode fiber with temporal focusing distance (0-dB optical-signal-to-noise ratio penalty) of 60 km, and also demonstrate 100 km transmission with a bit error rate largely lower than the conventional Reed-Solomon forward error correction threshold of 10 -3 .

We report for the first time and characterize experimentally the complex optical conductivity of graphene on silicon photonic waveguides. This permits us to predict accurately the behavior of photonic integrated devices encompassing graphene layers. Exploiting a Si microring add/drop resonator, we show the effect of electrical gating of graphene on the complex effective index of the waveguide by measuring both the wavelength shift of the resonance and the change in the drop peak transmission. Due to electro-refractive effect of graphene a giant (>10 -3 ) change in the effective index is demonstrated for the first time on Si photonics waveguides and this large effect will crucially impact performances and consumption of Si photonics devices. We confirmed the results by two independent experiments involving two different gating schemes: Si gating through the ridge waveguide, and polymer-electrolyte gating. Both the experiments demonstrate a very large phase effect in good agreement with numerical calculations. The reported results validate the Kubo model for the case of graphene-Si photonics interfaces and for propagation in this type of waveguide. This is fundamental for the next design and fabrication of future graphene-silicon photonics devices.

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

Bathyal cold seeps are isolated extreme deep-sea environments characterized by low species diversity while biomass can be high. The Håkon Mosby mud volcano (Barents Sea, 1,280 m) is a rather stable chemosynthetic driven habitat characterized by prominent surface bacterial mats with high sulfide concentrations and low oxygen levels. Here, the nematode Halomonhystera hermesi thrives in high abundances (11,000 individuals 10 cm(-2)). Halomonhystera hermesi is a member of the intertidal Halomonhystera disjuncta species complex that includes five cryptic species (GD1-5). GD1-5's common habitat is characterized by strong environmental fluctuations. Here, we compared the transcriptomes of H. hermesi and GD1, H. hermesi's closest relative. Genes encoding proteins involved in oxidative phosphorylation are more strongly expressed in H. hermesi than in GD1, and many genes were only observed in H. hermesi while being completely absent in GD1. Both observations could in part be attributed to high sulfide concentrations and low oxygen levels. Additionally, fatty acid elongation was also prominent in H. hermesi confirming the importance of highly unsaturated fatty acids in this species. Significant higher amounts of transcription factors and genes involved in signaling receptor activity were observed in GD1 (many of which were completely absent in H. hermesi), allowing fast signaling and transcriptional reprogramming which can mediate survival in dynamic intertidal environments. GC content was approximately 8% higher in H. hermesi coding unigenes resulting in differential codon usage between both species and a higher proportion of amino acids with GC-rich codons in H. hermesi. In general our results showed that most pathways were active in both environments and that only three genes are under natural selection. This indicates that also plasticity should be taken in consideration in the evolutionary history of Halomonhystera species. Such plasticity, as well as possible preadaptation to low oxygen and high sulfide levels might have played an important role in the establishment of a cold-seep Halomonhystera population., (© The Author 2015. Published by Oxford University Press on behalf of the Society for Molecular Biology and Evolution.)

An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III-V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated. The generated fundamental RF tone shows a 1.7 kHz 3 dB linewidth. Over 9 mW waveguide coupled output power is demonstrated.

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Laser frequency combs, sources with a spectrum consisting of hundred thousands evenly spaced narrow lines, have an exhilarating potential for new approaches to molecular spectroscopy and sensing in the mid-infrared region. The generation of such broadband coherent sources is presently under active exploration. Technical challenges have slowed down such developments. Identifying a versatile highly nonlinear medium for significantly broadening a mid-infrared comb spectrum remains challenging. Here we take a different approach to spectral broadening of mid-infrared frequency combs and investigate CMOS-compatible highly nonlinear dispersion-engineered silicon nanophotonic waveguides on a silicon-on-insulator chip. We record octave-spanning (1,500-3,300 nm) spectra with a coupled input pulse energy as low as 16 pJ. We demonstrate phase-coherent comb spectra broadened on a room-temperature-operating CMOS-compatible chip.