191 results on '"Tiller, W. A."'
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152. Impurity Striations in Czochralski Grown Al-Doped Si Single Crystals
153. Discussion: “Macroscopic Interface Shape During Solidification” (Wilcox, W. R., and Duty, R. L., 1966, ASME J. Heat Transfer, 88, pp. 45–49)
154. ChemInform Abstract: VERUNREINIGUNGS‐STREIFENBILDUNGEN IN NACH DER CZOCHRALSKI‐METHODE GEZUECHTETEN, MIT AL DOTIERTEN SI‐EINKRISTALLEN
155. ALLOY DENDRITIC GROWTH
156. GROWTH TWINS IN GERMANIUM
157. THE FUNCTION OF CONSTITUTIONAL SUPERCOOLING IN CRYSTAL GROWTH
158. Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si.
159. A Structural Analysis of Thin Amorphous Silicon Films.
160. Surface Stress Tensor Mediation of the Ledge Nucleation/Growth Process with the Surface Reconstruction Process in GaAs.
161. Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation.
162. Corona-Discharge-Induced Stress Relaxation in Silicon Dioxide Films on Silicon.
163. Intrinsic LiNbO~3 melt species partitioning at the congruent melt composition. I. Dynamic interface case
164. Intrinsic LiNbO~3 melt species partitioning at the congruent melt composition. I. Static interface case
165. Incorporating convection into one-dimensional solute redistribution during crystal growth from the melt. II. The initial transient solution
166. Cr migration associated with interface electric fields during transient LiNbO~3 crystal growth
167. Microbubble formation during crystallization of LiNbO~3 melts
168. Algorithm for degree reduction of B-spline curves
169. Software-engineering approach to degree elevation of B-spline curves
170. Indiana Missionary Convention.
171. ANNUAL MEETING OF THE 4th (IND.) DISTRICT.
172. Annual Convention of the Fourth Missionary District of Indiana.
173. Fourth Indiana District.
174. A model potential function for carbon systems: Clusters
175. Steric origin of the silicon-oxygen-silicon angle distribution in silica
176. Apparatus for producing controlled positive or negative corona discharge for semiconductor materials processing
177. Interface morphology during crystallization. I. Single filament, unconstrained growth from a pure melt
178. Interface morphology during crystallization. II. Single filament, unconstrained growth from a binary alloy melt
179. Controlled reactive sputter synthesis of refractory oxides SiO /SUB x/ , the silicon-oxygen system
180. Effects of corona-discharge-induced oxygen ion beams and electric fields on silicon oxidation kinetics. II. Electric field effects
181. Effects of high carbon concentration upon oxygen precipitation and related phenomena in CzSi
182. THERMOELECTRICITY. Progress Report No. 6. JULY 30, 1958. Includes paper: SOLID-LIQUID PHASE EQULIBRIA IN THE PSEUDO-BINARY SYSTEM Bi$sub 2$Te$sub 3$-Bi$sub 2$Se$sub 3$
183. APPLICATION OF CONTROLLED ELECTROMAGNETIC FORCES DURING SOLIDIFICATION OF TYPE 304 STAINLESS STEEL. Quarterly Progress Report No. 5, June 1--September 30, 1970.
184. Biological processes, quantum mechanics and electromagnetic fields: the possibility of device-encapsulated human intention in medical therapies.
185. Can an aspect of consciousness be imprinted into an electronic device?
186. Cardiac coherence: a new, noninvasive measure of autonomic nervous system order.
187. The effects of emotions on short-term power spectrum analysis of heart rate variability .
188. Letters to the editor.
189. Simple and economical capacitive displacement system for UHV operation.
190. Towards the development of a mathematical model for acupuncture meridians.
191. Dendrites: Understanding of this familiar phenomenon has led to the development of useful man-made materials.
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