301. Enhancement in Thermoelectric Properties of TiS2 by Sn Addition
- Author
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Sankar Raman, Li-Chyong Chen, Anbalagan Ramakrishnan, and Kuei-Hsien Chen
- Subjects
010302 applied physics ,Materials science ,Annealing (metallurgy) ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Microstructure ,Thermoelectric materials ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Thermal conductivity ,Impurity ,Electrical resistivity and conductivity ,Seebeck coefficient ,0103 physical sciences ,Thermoelectric effect ,Materials Chemistry ,Electrical and Electronic Engineering ,0210 nano-technology - Abstract
A series of Sn added TiS2 (TiS2:Sn x ; x = 0, 0.05, 0.075 and 0.1) were prepared by solid state synthesis with subsequent annealing. The Sn atoms interacted with sulfur atoms in TiS2 and formed a trace amount of misfit layer (SnS)1+m(TiS2−δ)n compound with sulfur deficiency. A significant reduction in electrical resistivity with moderate decrease in the Seebeck coefficient was observed in Sn added TiS2. Hence, a maximum power factor of 1.71 mW/m-K2 at 373 K was obtained in TiS2:Sn0.05. In addition, the thermal conductivity was decreased with Sn addition and reached a minimum value of 2.11 W/m-K at 623 K in TiS2:Sn0.075, due to the impurity phase (misfit phase) and defects (excess Ti) scattering. The zT values increased from 0.08 in pristine TiS2 to an optimized value of 0.46 K at 623 K in TiS2:Sn0.05.
- Published
- 2017