251. Kinetics of grain growth in doped polycrystalline silicon thin films
- Author
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R. Dhanasekaran, S. Kalainathan, and P. Ramasamy
- Subjects
Materials science ,Dopant ,Annealing (metallurgy) ,Kinetics ,Metallurgy ,Doping ,Metals and Alloys ,Nanocrystalline silicon ,Surfaces and Interfaces ,engineering.material ,Grain size ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Grain growth ,Polycrystalline silicon ,Materials Chemistry ,engineering ,Composite material - Abstract
We have investigated the kinetics of grain growth, during thermal annealing, in polycrystalline silicon heavily doped with phosporus and arsenic. We have used a thermodynamic approach to evaluate the driving force behind grain growth. An expression for grain size has been derived as a function of time and temperature of annealing and concentration of dopants, and a numerical analysis has been carried out using a computer simulation technique. The results are presented and discussed in detail.
- Published
- 1988
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