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This work presents the analog performance of nMOS and pMOS triple-gate FinFETs with high-k dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation are explored. No halo FinFETs can achieve extremely large gain at similar channel length and improved unity gain frequency. The FinFETs with channel length of 110 nm achieved an intrinsic gain of 25 dB. Extremely large Early voltages have been measured on long channel nMOS and pMOS with relatively wide fins compared to the results usually reported in the literature. The large Early voltage obtained suggests the devices are in the onset of volume inversion phenomena due to the low doping level of the device body.

This paper studies the temperature reduction influence on some analog figures of merit of n-type triple-gate FinFETs with undoped body, using DC measurements. It is demonstrated that the temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L=90 nm FinFET is degraded by 3 dB when the temperature reduces from 300 K down to 100 K. A comparison with planar single gate fully depleted SOI reveals that the temperature degradation of the output conductance in FinFETs is less temperature-dependent.