Search

Germanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging applications. The Ge absorption layer detects light at wavelengths up to ≈ 1600 nm with the Si acting as an avalanche medium, providing high gain with low excess avalanche noise. Such APDs are typically used in waveguide configurations as growing a sufficiently thick Ge absorbing layer is challenging. Here, we report on a new vertically illuminated pseudo-planar Ge-on-Si APD design utilizing a 2 µm thick Ge absorber and a 1.4 µm thick Si multiplication region. At a wavelength of 1550 nm, 50 µm diameter devices show a responsivity of 0.41 A/W at unity gain, a maximum avalanche gain of 101 and an excess noise factor of 3.1 at a gain of 20. This excess noise factor represents a record low noise for all configurations of Ge-on-Si APDs. These APDs can be inexpensively manufactured and have potential integration in silicon photonic platforms allowing use in a variety of applications requiring high-sensitivity detectors at wavelengths around 1550 nm.

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26µ m diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7×10 -17 W H z -12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134±10 p s are demonstrated.

A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared integrated photonic waveguides is demonstrated. The technique utilizes lithography patterned polymer blocks that absorb light strongly within the molecular fingerprint region. These act as integrated waveguide detectors when combined with an atomic force microscope that measures the photothermal expansion when infrared light is guided to the block. As a proof of concept, the technique is used to experimentally characterize propagation loss and grating coupler response of Ge-on-Si waveguides at wavelengths from 6 to 10 µm. In addition, when the microscope is operated in scanning mode at fixed wavelength, the guided mode exiting the output facet is imaged with a lateral resolution better than 500 nm i.e. below the diffraction limit. The characterization technique can be applied to any mid-infrared waveguide platform and can provide non-destructive in-situ testing of discrete waveguide components.

We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles played by the deposition rate, substrate temperature, and substrate pattern geometry are identified. By combining various scanning and transmission electron microscopy techniques, it has been possible to link the appearance pits of a few hundred nanometer width at the microcrystal surface with the formation of nanovoids within the crystal volume. A phase-field model, including surface diffusion and the flux of incoming material with shadowing effects, reproduces the qualitative features of the nanovoid formation thereby opening new perspectives for the bottom-up fabrication of 3D semiconductors microstructures., Competing Interests: The authors declare no competing financial interest.

We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells, optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling barrier are designed to operate as a three-level laser system with non-equilibrium population generated by optical pumping around the 1→3 intersubband transition at 10 THz. The non-equilibrium subband population dynamics are studied by absorption-saturation measurements and compared to a numerical model. In the emission spectroscopy experiment, we observed a photoluminescence peak at 4 THz, which can be attributed to the 3→2 intersubband transition with possible contribution from the 2→1 intersubband transition. These results represent a step towards silicon-based integrated terahertz emitters.

Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of the mid-infrared spectrum. Sensing is carried out using two spin-coated films, with strong absorption in the mid-infrared. These films are used to calibrate the modal overlap with an analyte, and therefore experimentally demonstrate the potential for Ge-on-Si waveguides for mid-infrared sensing applications. The results are compared to Fourier transform infrared spectroscopy measurements. The advantage of waveguide spectroscopy is demonstrated in terms of the increased optical interaction, and a new multi-path length approach is demonstrated to improve the dynamic range, which is not possible with conventional FTIR or attenuated total reflection (ATR) measurements. These results highlight the potential for Ge-on-Si as an integrated sensing platform for healthcare, pollution monitoring and defence applications.

A silicon nitride micro-ring resonator with a loaded Q factor of 1.4 × 10 6 at 780 nm wavelength is demonstrated on silicon substrates. This is due to the low propagation loss waveguides achieved by optimization of waveguide sidewall interactions and top cladding refractive index. Potential applications include laser frequency stabilization allowing for chip-scale atomic systems targeting the 87 Rb atomic transition at 780.24 nm. The temperature dependent wavelength shift of the micro-ring was determined to be 13.1 pm/K indicating that a minimum temperature stability of less than ±15 mK is required for such devices for wavelength locking applications. If a polyurethane acrylate top cladding of an optimized thickness is used then the micro-ring could effectively be athermal, resulting in reduced footprint, power consumption, and cost of potential devices.

We present a scanning light detection and ranging (LIDAR) system incorporating an individual Ge-on-Si single-photon avalanche diode (SPAD) detector for depth and intensity imaging in the short-wavelength infrared region. The time-correlated single-photon counting technique was used to determine the return photon time-of-flight for target depth information. In laboratory demonstrations, depth and intensity reconstructions were made of targets at short range, using advanced image processing algorithms tailored for the analysis of single-photon time-of-flight data. These laboratory measurements were used to predict the performance of the single-photon LIDAR system at longer ranges, providing estimations that sub-milliwatt average power levels would be required for kilometer range depth measurements.

Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.

We demonstrate third harmonic generation in plasmonic antennas consisting of highly doped germanium grown on silicon substrates and designed to be resonant in the mid-infrared frequency range that is inaccessible with conventional nonlinear plasmonic materials. Owing to the near-field enhancement, the result is an ultrafast, subdiffraction, coherent light source with a wavelength tunable between 3 and 5 µm, and ideally overlapping with the fingerprint region of molecular vibrations. To observe the nonlinearity in this challenging spectral window, a high-power femtosecond laser system equipped with parametric frequency conversion in combination with an all-reflective confocal microscope setup is employed. We demonstrate spatially resolved maps of the linear scattering cross section and the nonlinear emission of single isolated antenna structures. A clear third-order power dependence as well as mid-infrared emission spectra prove the nonlinear nature of the light emission. Simulations support the observed resonance length of the double-rod antenna and demonstrate that the field enhancement inside the antenna material is responsible for the nonlinear frequency mixing., Competing Interests: The authors declare that they have no conflict of interest.

Anion exchange has been performed with nanoplates of tin sulfide (SnS) via "soft chemical" organic-free solution syntheses to yield layered pseudo-ternary tin chalcogenides on a 10 g-scale. SnS undergoes a topotactic transformation to form a series of S-substituted tin selenide (SnSe) nano/micro-plates with tuneable chalcogenide composition. SnS 0.1 Se 0.9 nanoplates were spark plasma sintered into phase-pure, textured, dense pellets, the ZT of which has been significantly enhanced to ≈1.16 from ≈0.74 at 923 K via microstructure texturing control. These approaches provide versatile, scalable and low-cost routes to p-type layered tin chalcogenides with controllable composition and competitive thermoelectric performance.

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 10 8 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.