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Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics.Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2 layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2 substrates. CVD affords the controllable, large-scale preparation of MoS2 on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2 layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2 grown on h-BN as well as the interactions between MoS2 and the supporting substrate. Compared to silica, MoS2 layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation. [ABSTRACT FROM AUTHOR]

Since we are expecting consumers to pay more for lamb, the outstanding flavor of lamb must be consistent and/or improved allowing for lamb consumers to be continually satisfied. The importance of lamb flavor in the marketplace is underscored by the fact that consumers' flavor preferences are reflected in their lamb purchase decisions. The most recent National Lamb Quality Audit (NLQA) data identified eating satisfaction at the most prominent factor defining lamb quality, and eating satisfaction was most commonly defined as lamb flavor and/or taste. Additionally, 71.7% of the purchasers of U.S. lamb surveyed in the NLQA indicated that they were willing to pay a premium for guaranteed eating satisfaction, and they also indicated, on average, that they were willing to pay an 18.6% premium for this guarantee. This information serves as an indication that differentiating lamb on the basis of flavor may result in considerable premiums and allow for the American lamb industry to capitalize on opportunities with lamb flavor to increase demand. It has been well established that production practices and animal age influence lamb flavor by altering fat and lean composition. Specifically, as lambs mature, and even if lambs are grain-fed for extended/excessive periods of time, there is an increase in the concentration of branched-chain fatty acids resulting in undesirable, "mutton-like" off-flavors. Also, grass-finishing results in a higher proportion of long-chain, unsaturated fatty acids which are less stable and an increase in skatole potentially result in undesirable flavors. The NLQA data indicated that respondents closest to the consumer identified characterized American lamb as having "good flavor", "milder flavor", flavorful, and "different than grass flavor". Responses regarding the image of imported lamb resulted in lamb described as "less flavorful", "gamey flavor", "different flavor", "stronger flavor", and "consistent flavor" .The NLQA data suggest that consumers desire for lamb flavor to be characterized for individual products allowing the purchaser to make a purchase on the basis of their flavor preference (e.g., bold, medium, or mild). Fat and lean compositional differences can be measured using volatile flavor compound analysis and olfactometry (electronic nose), and researchers focusing on the flavor or meat have been able to associate meat flavor attributes with these methods. The purpose of this research is to develop a proof of concept for using these technologies to differentiate lamb flavor and identify the opportunity to utilize these technologies at production speeds to segregate lambs into unique flavor groups. [ABSTRACT FROM AUTHOR]

Abstract Background The Arabidopsis thaliana dgat1 mutant, AS11, has an oil content which is decreased by 30%, and a strongly increased ratio of 18:3/20:1, compared to wild type. Despite lacking a functional DGAT1, AS11 still manages to make 70% of WT seed oil levels. Recently, it was demonstrated that in the absence of DGAT1, PDAT1 was essential for normal seed development, and is a dominant determinant in Arabidopsis TAG biosynthesis. Methods Biochemical, metabolic and gene expression studies combined with genetic crossing of selected Arabidopsis mutants have been carried out to demonstrate the contribution of Arabidopsis PDAT1 and LPCAT2 in the absence of DGAT1 activity. Results Through microarray and RT-PCR gene expression analyses of AS11 vs. WT mid-developing siliques, we observed consistent trends between the two methods. FAD2 and FAD3 were up-regulated and FAE1 down-regulated, consistent with the AS11 acyl phenotype. PDAT1 expression was up-regulated by ca 65% while PDAT2 expression was up-regulated only 15%, reinforcing the dominant role of PDAT1 in AS11 TAG biosynthesis. The expression of LPCAT2 was up-regulated by 50-75%, while LPCAT1 expression was not significantly affected. In vitro LPCAT activity was enhanced by 75-125% in microsomal protein preparations from mid-developing AS11 seed vs WT. Co-incident homozygous knockout lines of dgat1/lpcat2 exhibited severe penalties on TAG biosynthesis, delayed plant development and seed set, even with a functional PDAT1; the double mutant dgat1/lpcat1 showed only marginally lower oil content than AS11. Conclusions Collectively, the data strongly support that in AS11 it is LPCAT2 up-regulation which is primarily responsible for assisting in PDAT1-catalyzed TAG biosynthesis, maintaining a supply of PC as co-substrate to transfer sn-2 moieties to the sn-3 position of the enlarged AS11 DAG pool.

Abstract Introduction As urban and rural land development become widespread features of the global landscape so an understanding of the landscape requirements of displaced and isolated wildlife species becomes increasingly important for conservation planning. In the Cape Peninsula, South Africa, rapid human population growth, and the associated urban and rural land transformation, threatens the sustainability of the local chacma baboon population. Here we analyse spatial data collected from nine of the 12 extant troops to determine their population-level landscape requirements. We use hurdle models to ascertain the key landscape features influencing baboon occurrence and abundance patterns on two hierarchical spatial scales. Results Both spatial scales produced similar results that were ecologically reliable and interpretable. The models indicated that baboons were more likely to occur, and be more abundant, at low altitudes, on steep slopes and in human-modified habitats. The combination of these landscape variables provides baboons with access to the best quality natural and anthropogenic food sources in close proximity to one another and suitable sleeping sites. Surface water did not emerge as an influential landscape feature presumably as the area is not water stressed. Conclusions The model results indicate that land development in the Cape Peninsula has pushed baboons into increasingly marginal natural habitat while simultaneously providing them with predictable and easily accessible food sources in human-modified habitats. The resultant spatial competition between humans and baboons explains the high levels of human-baboon conflict and further erosion of the remaining land fragments is predicted to exacerbate competition. This study demonstrates how the quantification of animal landscape requirements can provide a mechanism for identifying priority conservation areas at the human-wildlife interface.

Abstract The association of paraneoplastic hypoglycemia [Doege-Potter syndrome] and finger clubbing [Pierre-Marie-Bamberg syndrome] with pleural solitary fibrous tumour is rare. We present a previously unpublished but typical example of this rare occurrence together with a detailed updated literature review of previously published cases of pleural SFT discussing the histopathology of SFT; pathophysiology of the hypoglycemia and finger clubbing; treatment and outcome of pleural SFT. The patient, a 57-year-old African male was admitted at our hospital with recurrent episodes of hypoglycemia. He was found to have digital clubbing and decreased breath sounds in the right lower chest but no other significant clinical findings. His insulin level measured during an episode of hypoglycemia was undetectable. Chest radiograph and CT-scan revealed a lobulated mass in the right chest which was diagnosed to be SFT on histology. Surgical excision of the mass resulted in cure of the hypoglycemic episodes and rapid regression of the clubbing. Less than 65 cases of pleural SFT manifesting with hypoglycemia with or without finger-clubbing have been published in the English literature. The mean diameter of these tumours manifesting with hypoglycemia is 20 cm, 54% being benign while 42% were malignant. They predominantly present in the 6th-8th decade, average age of 64 years and a slight male preponderance at 58%. Complete surgical resection remains the most important predictor of clinical outcome in terms of recurrence and metastases, while providing instant cure for the hypoglycemia and rapid resolution of the finger clubbing.