834 results on '"Heitz, R."'
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302. Intensity‐dependent energy and line shape variation of donor–acceptor‐pair bands in ZnSe:N at different compensation levels
303. Thermal stability of the midgap acceptor rhodium in indium phosphide
304. Dephasing of acceptor bound excitons in II–VI semiconductors
305. InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
306. Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers
307. Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
308. Zeeman Spectroscopy on the Nitrogen Acceptor-Bound Exciton in Epitaxial ZnSe
309. Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System
310. Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
311. Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
312. Transition Metal Luminescence in AlN Crystals
313. Identification of Transition Metals in GaN
314. High-resolution Zeeman spectroscopy ofNi2+in ZnS
315. Novel ways to grow thermally stable semi-insulating InP-based layers
316. Spatially indirect photoluminescence from InAs/AlSb heterostructures
317. Exciton dynamics in Ni-activated CdS
318. Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy
319. Calorimetric absorption spectroscopy of copper centers in II–VI semiconductors at mK temperatures
320. Energy transfer processes via the interface of ZnSe/GaAs epilayers
321. Degenerate four-wave mixing at bound excitons in II–VI semiconductors
322. Recombination dynamics in strained In1-xGaxAs/InP-quantum well structures
323. Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition
324. The influence of nitrogen on the p-conductivity in ZnSe epilayers grown by molecular beam epitaxy
325. Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors
326. Recombination mechanisms in highly doped CdS:In
327. Spontaneous photon echo from the (A0, X) complex in CdS
328. Nonradiative transition rates of Fe2+ in III–V and II–VI semiconductors
329. InAs Nanostructures in a Silicon Matrix: Growth and Properties.
330. Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy.
331. Nonlinear Zeeman Splitting and Electron-Phonon Coupling
332. Energy Transfer between Fe2+ Centers in Polymorphic ZnS
333. Fine Structure of the (Fe2+, h) Bound States in GaP and InP
334. Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO
335. Magneto-optics of Ni-bound shallow states in ZnS and CdS
336. Rh: a Dopant with Mid-Gap Levels in InP and InGaAs and Superior Thermal Stability
337. Nonradiative recombination processes of Ni-impurities in CdS and ZnS
338. Picosecond recombination dynamics at Ni-centres in ZnS and CdS
339. Fe3+center in ZnO
340. Picosecond relaxation of Ni-centers in II–VI semiconductors
341. Nonlinear Zeeman effect of the Ni3+ centre in ZnO
342. Recombination kinetics of CdS: In
343. Fast relaxation phenomena in Ni-doped II–VI compounds
344. Optical nonlinearity and fast switching due to birefringence and mode coupling in CdS crystals
345. The copper centre: a transient shallow acceptor in ZnS and CdS
346. Picosecond Energy Transfer between Excitons and Defects in II-IV Semiconductors
347. Gain and loss mechanisms in InGaAs/InGaAsP multi-quantum-well laser structures
348. Luminescence of A 5d-Centre in ZnS
349. Growth, characterizations, theory and lasing of vertically stacked quantum dots.
350. 10/sup 16/ cm/sup -3/ electrically active and thermally stable deep Rh acceptors in InP.
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