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Primary B-cell lymphoma of the testis, breast and thyroid are rare and data concerning cytogenetic aberrations at these extranodal sites are scarce. We examined the presence of extranodal marginal zone lymphoma-associated translocations, t(11;18)(q21;q21), t(1;14)(p22;q32), t(14;18)(q32;q21), t(3;14)(p14.1;q32) and numerical aberrations of chromosomes 1, 3, 12 and 18 by fluorescence in situhybridization in 6 extranodal marginal zone lymphomas and 24 diffuse large B-cell lymphomas with (n=9) or without (n=15) marginal zone lymphoma components, with primary localizations in the breast (n=15), testis (n=9) and thyroid (n=6). We found t(14;18)(q32;q21), with breakpoints in IGHand MALT1, in one testicular diffuse large B-cell lymphoma and in two diffuse large B-cell lymphomas of the breast. No other translocations, amplifications or deletions involving IGH, BCL-10, BCL-2, MALT1and IAP2were detected. Numerical aberrations occurred in 67% of the lymphomas, 67% of extranodal marginal zone lymphomas, 56% of diffuse large B-cell lymphomas with marginal zone lymphoma components and in 73% of ‘de novo' diffuse large B-cell lymphomas. These included 78% of testis, 67% of thyroid and 60% of breast lymphomas, and included mainly trisomy 18 (n=16), trisomy 3 (n=8) and trisomy 1 (n=3). One testicular diffuse large B-cell lymphoma harbored both t(14;18)(q32;q21) and trisomy 3. Our results indicate that at least a few cases of diffuse large B-cell lymphoma of the testis and the breast belong to the spectrum of extranodal marginal zone lymphoma.

The desire to reduce cost in volume manufacturing has driven up the throughput in the lithographic exposure machines. As a result the power transmitted in the projection optics increases. Although small, the absorption levels in the lens materials are not zero, which leads to localized heating of the lens and hence lens aberrations. To squeeze out the maximum process windows, the pupil shapes have transformed from simple annular shapes to shapes with very concentrated poles. As a result, the exposure energy transported through the lens is no longer equally distributed over the lenses of the projection options. Instead only a fraction of the lens gets to transport the total power. This concentration of power further aggravates the lens heating induced aberrations and enhances the importance of advanced lens heating control schemes which are available on ASML scanners. To analyze the effects of lens heating on the final imaging, a model was developed by the lens manufacturer Carl Zeiss SMT GmbH, and incorporated into a litho simulation environment by ASML BRION. This tool can be used to analyze the impact of dose/throughput, illumination shapes and reticle layout on aberrations. It provides a means to assess potential lens heating issues even before production masks are manufactured. Moreover, this computational tool opens the possibility to calculate parameters for lens heating correction, rather than measuring them, saving valuable machine time. In this paper, the performance of the novel computational lens heating control is demonstrated on wafer and compared with the traditional way of measuring the relevant parameters. In addition, a modeling study is performed to assess possible lens heating effects for freeform or non-traditional source shapes, thereby demonstrating the advanced correction potential of ASML latest aberration manipulator, called FlexWaveTM.

Once a process is set-up in an integrated circuit (IC) manufacturer's fabrication environment, any drift in the proximity fingerprint of the cluster will negatively impact the yield. In complement to the dose, focus and overlay control of the cluster, it is therefore also of ever growing importance to monitor and maintain the proximity stability (or CD through pitch behavior) of each cluster. In this paper, we report on an experimental proximity stability study of an ASML XT:1900i cluster for a 32 nm poly process from four different angles. First, we demonstrate the proximity stability over time by weekly wafer exposure and CD through pitch measurements. Second, we investigate proximity stability from tool-to-tool. In a third approach, the stability over the exposure field (intra-field through-pitch CD uniformity) is investigated. Finally, we verify that proximity is maintained through the lot when applying lens heating correction. Monitoring and maintaining the scanner's optical proximity through time, through the lot, over the field, and from toolto- tool, involves extensive CD metrology through pitch. In this work, we demonstrate that fast and precise CD through pitch data acquisition can be obtained by scatterometry (ASML YieldStarTMS-100), which significantly reduces the metrology load. The results of this study not only demonstrate the excellent optical proximity stability on a XT:1900i exposure cluster for a 32 nm poly process, but also show how scatterometry enables thorough optical proximity control in a fabrication environment.