662 results on '"Zhuravlev, K. S."'
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252. Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs
253. Photoluminescence kinetics of type II GaAs/AlAs superlattices under the influence of an electric field
254. TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE FROM CdS NANOCLUSTERS FORMED IN THE MATRIX OF A LANGMUIR-BLODGETT FILM
255. Influence of trapping on the exciton dynamics of AlxGa1−xAs films
256. Dynamics of relaxation and trapping of excitons in AlxGa1– xAs films
257. Excitonic polaritons in semiconductor solid solutions AlxGa1– xAs
258. Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1−xAs matrices
259. Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix
260. Origin of Below Band-Gap Photoluminescence from GaN Quantum Dots in AlN Matrix
261. Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines
262. Symmetry of electron states and optical transitions in GaN/AlN hexagonal quantum dots
263. Exciton fine structure and spin dynamics in high purity AlGaAs layers
264. Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions
265. Effect of uniform compression on photoluminescence spectra of GaAs layers heavily doped with beryllium
266. Comparative analysis of (0001)GaN and (001)GaAs growth kinetics under Ga‐rich conditions
267. Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing
268. Mechanism of Photoluminescence from Sl-Nanocrystals Fabricated in SiO2 -Matrix
269. Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy.
270. Growth kinetics of (0001)GaN from Ga and NH3 fluxes
271. Photoluminescence from cadmium sulfide nanoclusters formed in the matrix of a Langmuir-Blodgett film
272. Raman and HRTEM investigations of Ge nanocrystals produced by Ge+-ion implantation of SiO2 films and subsequent high-pressure annealing
273. Porous-like silicon prepared from Si:H annealed at high argon pressure
274. Observation of exchange interaction effects under optical orientation of excitons in AlGaAs
275. Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix
276. PHOTOLUMINESCENCE STUDIES ON CdS NANOCLUSTERS FABRICATED IN LANGMUIR-BLODGETT FILMS
277. Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure
278. Recombination of excitons bound on donor-acceptor impurity pairs in δ-doped type II GaAs/AlAs superlattices
279. Optically detected magnetic resonance of shallow donors in GaAs observed in photoluminescence kinetics
280. Quantum-sized silicon precipitates in silicon-implanted and pulse-annealed silicon dioxide films: Photoluminescence and structural transformations
281. Structural and optical properties of Si/-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE.
282. Exciton recombination in δ-doped type-II GaAs/AlAs superlattices
283. Predominance of Geminate Process of Exciton Formation in AlGaAs Layers at Low Excitation.
284. Field Effect Transistor Constructed of Novel Structure With Short-Period (GaAs)n/(AlAs)m Superlattice.
285. Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasma
286. Millisecond phosphorescence of free electrons in pure GaAs
287. The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions
288. Optical properties of germanium monolayers on silicon
289. Photoluminescence kinetics in GaAs under the influence of surface acoustic waves
290. Visible photoluminescence from Ge+-ion-implanted SiO x N y annealed under hydrostatic pressure
291. Kinetics of exciton photoluminescence in type-II semiconductor superlattices
292. Self-trapped exciton recombination in silicon nanocrystals
293. Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure
294. Visible photoluminescence from Ge+-ion-implanted SiOxNy annealed under hydrostatic pressure.
295. Photoresistance of Si/Ge/Si structures with germanium quantum dots
296. Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide
297. The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers
298. Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
299. Polariton luminescence in high-purity layers of AlGaAs solid solutions
300. Use of high-purity AlxGa1−x as layers in epitaxial structures for high-power microwave field-effect transistors
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