251. Band-Order Anomaly at the γ-Al2O3/SrTiO3Interface Drives the Electron-Mobility Boost
- Author
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Chikina, Alla, Christensen, Dennis V., Borisov, Vladislav, Husanu, Marius-Adrian, Chen, Yunzhong, Wang, Xiaoqiang, Schmitt, Thorsten, Radovic, Milan, Nagaosa, Naoto, Mishchenko, Andrey S., Valentí, Roser, Pryds, Nini, and Strocov, Vladimir N.
- Abstract
The rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about 2 orders of magnitude has been demonstrated at the spinel–perovskite γ-Al2O3/SrTiO3interface compared to the paradigm perovskite–perovskite LaAlO3/SrTiO3interface. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3which depopulates electron states in the top SrTiO3layer. This rearrangement of the mobile electron system pushes the electron density away from the interface, which reduces its overlap with the interfacial defects and weakens the electron–phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3and perovskite SrTiO3. Band-order engineering, exploiting the fundamental symmetry properties, emerges as another route to boost the performance of oxide devices.
- Published
- 2021
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