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252. Formation of Long-Lived Color Centers for Broadband Visible Light Emission in Low-Dimensional Layered Perovskites

Author

Booker, Edward P., Thomas, Tudor H., Quarti, Claudio, Stanton, Michael R., Dashwood, Cameron D., Gillett, Alexander J., Richter, Johannes M., Pearson, Andrew J., Davis, Nathaniel J. L. K., Sirringhaus, Henning, Price, Michael B., Greenham, Neil C., Beljonne, David, Dutton, Siân E., and Deschler, Felix

Abstract

We investigate the origin of the broadband visible emission in layered hybrid lead-halide perovskites and its connection with structural and photophysical properties. We study ⟨001⟩ oriented thin films of hexylammonium (HA) lead iodide, (C6H16N)2PbI4, and dodecylammonium (DA) lead iodide, (C12H28N)2PbI4, by combining first-principles simulations with time-resolved photoluminescence, steady-state absorption and X-ray diffraction measurements on cooling from 300 to 4 K. Ultrafast transient absorption and photoluminescence measurements are used to track the formation and recombination of emissive states. In addition to the excitonic photoluminescence near the absorption edge, we find a red-shifted, broadband (full-width at half-maximum of about 0.4 eV), emission band below 200 K, similar to emission from ⟨110⟩ oriented bromide 2D perovskites at room temperature. The lifetime of this sub-band-gap emission exceeds that of the excitonic transition by orders of magnitude. We use X-ray diffraction measurements to study the changes in crystal lattice with temperature. We report changes in the octahedral tilt and lattice spacing in both materials, together with a phase change around 200 K in DA2PbI4. DFT simulations of the HA2PbI4crystal structure indicate that the low-energy emission is due to interstitial iodide and related Frenkel defects. Our results demonstrate that white-light emission is not limited to ⟨110⟩ oriented bromide 2D perovskites but a general property of this class of system, and highlight the importance of defect control for the formation of low-energy emissive sites, which can provide a pathway to design tailored white-light emitters.

Published
2024
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253. Multitype Electronic Interactions in Precursor Solutions of Molecular Doped P3HT Polymer

Author

Tiwari, Vandana, Li, Xin, Li, Zheng, Jacobs, Ian E., Duan, Hong-Guang, Sirringhaus, Henning, Miller, R. J. Dwayne, and Jha, Ajay

Abstract

Spin-casting of molecularly doped polymer solution mixtures is one of the commonly used methods to obtain conductive organic semiconductor films. In spin-casted films, electronic interaction between the dopant and polymer is one of the crucial factors that dictates the doping efficiency. Here, we investigate excitonic couplings using ultrafast two-dimensional electronic spectroscopy to examine the different types of electronic interactions in ion pairs of the prototype F4TCNQ-doped P3HT polymer system in a precursor solution mixture for spin-casting. Off-diagonal peaks in the 2D spectra clearly establish the excitonic coupling between P3HT+and F4TCNQ–ions in solution. The observed excitonic coupling is the direct manifestation of a Coulombic interaction between the ion pair. The excited-state lifetime of F4TCNQ–in ion pairs shows biexponential decay at 30 and 200 fs, which hints toward the presence of a heterogeneous population with different interaction strengths. To examine the nature of these different types of interactions in solution mixtures, we study the system using molecular dynamics simulations on a fully solvated model employing the generalized Amber force field. We retrieve three dominant interaction modes of F4TCNQ anions with P3HT: side chain, π-stack, and slipped stack. To quantify these interactions, we complement our studies with electronic structure calculations, which reveal the excitonic coupling strengths of ∼ 75 cm–1for side chain, ∼ 150 cm–1for π–π-stack, and ∼69 cm–1for slipped stack. These various interaction modes provide information about the key geometries of the seed structures in precursor solution mixtures, which may determine the final structures in spin-casted films. The insights gained from our study may guide new strategies to control and ultimately tune Coulomb interactions in polymer-dopant solutions.

Published
2024
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254. Identification of Dipole Disorder in Low Temperature Solution Processed Oxides: its Utility and Suppression for Transparent High Performance Solution-processed Hybrid Electronics

Author

Banger, Kulbinder, Warwick, Christopher, Lang, Jiang, Broch, Katharina, Halpert, Jonathan Eugene, Socratous, Josephine, Brown, Adam, Leedham, Timothy, Sirringhaus, Henning, Banger, Kulbinder, Warwick, Christopher, Lang, Jiang, Broch, Katharina, Halpert, Jonathan Eugene, Socratous, Josephine, Brown, Adam, Leedham, Timothy, and Sirringhaus, Henning

Abstract

The ability to deposit high-quality inorganic semiconductors and dielectrics from solution at low process temperatures (∼200 °C) has become a very important research focus. During the course of our investigation, we identify the presence of an induced dipole present in solid state solution processed inorganic oxide insulator layers processed at reduced temperature (200-350 °C) from either molecular precursors, or well-dispersed metal oxide nanoparticles. Chemical composition analysis coupled with electrical measurements shows that the dielectric instability occurs due to proton migration via the Grotthuss mechanism inducing a long lived dipole disorder. Thus we established conditions for suppressing this effect to afford

Published
2016

256. High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

Author

Nikolka, Mark, primary, Nasrallah, Iyad, additional, Rose, Bradley, additional, Ravva, Mahesh Kumar, additional, Broch, Katharina, additional, Sadhanala, Aditya, additional, Harkin, David, additional, Charmet, Jerome, additional, Hurhangee, Michael, additional, Brown, Adam, additional, Illig, Steffen, additional, Too, Patrick, additional, Jongman, Jan, additional, McCulloch, Iain, additional, Bredas, Jean-Luc, additional, and Sirringhaus, Henning, additional

Published
2016
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260. Limits for Recombination in a Low Energy Loss Organic Heterojunction

Author

Menke, S. Matthew, primary, Sadhanala, Aditya, additional, Nikolka, Mark, additional, Ran, Niva A., additional, Ravva, Mahesh Kumar, additional, Abdel-Azeim, Safwat, additional, Stern, Hannah L., additional, Wang, Ming, additional, Sirringhaus, Henning, additional, Nguyen, Thuc-Quyen, additional, Brédas, Jean-Luc, additional, Bazan, Guillermo C., additional, and Friend, Richard H., additional

Published
2016
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263. Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors

Author

Di Pietro, Riccardo, primary, Nasrallah, Iyad, additional, Carpenter, Joshua, additional, Gann, Eliot, additional, Kölln, Lisa Sophie, additional, Thomsen, Lars, additional, Venkateshvaran, Deepak, additional, O'Hara, Kathryn, additional, Sadhanala, Aditya, additional, Chabinyc, Michael, additional, McNeill, Christopher R., additional, Facchetti, Antonio, additional, Ade, Harald, additional, Sirringhaus, Henning, additional, and Neher, Dieter, additional

Published
2016
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265. Naphthacenodithiophene Based Polymers—New Members of the Acenodithiophene Family Exhibiting High Mobility and Power Conversion Efficiency

Author

Knall, Astrid‐Caroline, primary, Ashraf, Raja Shahid, additional, Nikolka, Mark, additional, Nielsen, Christian B., additional, Purushothaman, Balaji, additional, Sadhanala, Aditya, additional, Hurhangee, Michael, additional, Broch, Katharina, additional, Harkin, David J., additional, Novák, Jiří, additional, Neophytou, Marios, additional, Hayoz, Pascal, additional, Sirringhaus, Henning, additional, and McCulloch, Iain, additional

Published
2016
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267. 2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion

Author

Kang, Keehoon, primary, Watanabe, Shun, additional, Broch, Katharina, additional, Sepe, Alessandro, additional, Brown, Adam, additional, Nasrallah, Iyad, additional, Nikolka, Mark, additional, Fei, Zhuping, additional, Heeney, Martin, additional, Matsumoto, Daisuke, additional, Marumoto, Kazuhiro, additional, Tanaka, Hisaaki, additional, Kuroda, Shin-ichi, additional, and Sirringhaus, Henning, additional

Published
2016
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268. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

Author

Luo, Hewei, primary, Yu, Chenmin, additional, Liu, Zitong, additional, Zhang, Guanxin, additional, Geng, Hua, additional, Yi, Yuanping, additional, Broch, Katharina, additional, Hu, Yuanyuan, additional, Sadhanala, Aditya, additional, Jiang, Lang, additional, Qi, Penglin, additional, Cai, Zhengxu, additional, Sirringhaus, Henning, additional, and Zhang, Deqing, additional

Published
2016
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270. Reducing dynamic disorder in small-molecule organic semiconductors by suppressing large-amplitude thermal motions

Author

Illig, Steffen, primary, Eggeman, Alexander S., additional, Troisi, Alessandro, additional, Jiang, Lang, additional, Warwick, Chris, additional, Nikolka, Mark, additional, Schweicher, Guillaume, additional, Yeates, Stephen G., additional, Henri Geerts, Yves, additional, Anthony, John E., additional, and Sirringhaus, Henning, additional

Published
2016
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273. A Vertical C60 Transistor with a Permeable Base Electrode

Author

Leo, Karl, Sirringhaus, Henning, Technische Universität Dresden, Fischer, Axel, Leo, Karl, Sirringhaus, Henning, Technische Universität Dresden, and Fischer, Axel

Abstract

A high performance vertical organic transistor based on the organic semiconductor C60 is developed in this work. The sandwich geometry of this transistor, well known from organic light-emitting diodes or organic solar cells, allows for a short transfer length of charge carriers in vertical direction. In comparison to conventional organic field-effect transistors with lateral current flow, much smaller channel lengths are reached, even if low resolution and low-cost shadow masks are used. As a result, the transistor operates at low voltages (1 V), drives current densities in the range of 10 A/cm², and enables a switching speed in the MHz range. The operation mechanism is studied in detail. It is demonstrated that the transistor can be described by a nano-porous permeable base electrode insulated by a thin native aluminum oxide film on its surface. Thus, the transistor has to be understood as two metal-oxide-semiconductor diodes, sharing a common electrode, the base. Upon applying a bias to the base, charges accumulate in front of the oxide, similar to the channel formation in a field-effect transistor. Due to the increased conductivity in this region, charges are efficiently transported toward and through the pinholes of the base electrode, realizing a high charge carrier transmission. Thus, even a low concentration of openings in the base electrode is sufficient to ensure large transmission currents. The device concept turns out to be ideal for applications where high transconductance and high operation frequency are needed, e.g. in analog amplifier circuits. The full potential of the transistor is obtained if the active area is structured by an insulating layer in order to perfectly align the three electrodes. Besides that, molecular doping near the charge injecting contact is essential to minimize the contact resistance. Due to the high power density in the vertical C60 transistor, Joule self-heating occurs, which is discussed in this work in the context of organi, In dieser Arbeit wird ein vertikaler organischer Transistor mit hoher Leistungsfähigkeit vorgestellt, der auf dem organischen Halbleiter C60 basiert. Die von organischen Leuchtdioden und organischen Solarzellen bekannte \'Sandwich’-Geometrie wird verwendet, so dass es möglich ist, für die vertikale Stromrichtung kurze Transferlängen der Ladungsträger zu erreichen. Im Vergleich zum konventionellen organischen Feldeffekttransistor mit lateralem Stromfluss werden dadurch viel kleinere Kanallängen erreicht, selbst wenn preisgünstige Schattenmasken mit geringer Auflösung für die thermische Verdampfung im Vakuum genutzt werden. Daher kann der Transistor bei einer Betriebsspannung von 1 V Stromdichten im Bereich von 10 A/cm² und Schaltgeschwindigkeiten im MHz-Bereich erreichen. Obwohl diese Technologie vielversprechend ist, fehlt bislang ein umfassendes Verständnis des Funktionsmechanismus. Hier wird gezeigt, dass der Transistor eine nanoporöse Basiselektrode hat, die durch ein natives Oxid auf ihrer Oberfläche elektrisch isoliert ist. Daher kann das Bauelement als zwei Metall-Oxid-Halbleiter-Dioden verstanden werden, die sich eine gemeinsame Elektrode, die Basis, teilen. Unter Spannung akkumulieren Ladungsträger vor dem Oxid, ähnlich zur Ausbildung eines Ladungsträgerkanals im Feldeffekttransistor. Aufgrund der erhöhten Leitfähigkeit in dieser Region werden Ladungsträger effizient zu und durch die Öffnungen der Basis transportiert, was zu hohen Ladungsträgertransmissionen führt. Selbst bei einer geringen Konzentration von Löchern in der Basiselektrode werden so hohe Transmissionsströme erzielt. Das Bauelementkonzept ist ideal für Anwendungen, in denen eine hohe Transkonduktanz und eine hohe Schaltgeschwindigkeit erreicht werden soll, z.B. in analogen Schaltkreisen, die kleine Signale verarbeiten. Das volle Potential des Transistors offenbart sich jedoch, wenn die aktive Fläche durch eine Isolatorschicht strukturiert wird, um den Überlapp der drei Elektroden zu optimieren

Published
2015

274. Enabling high-mobility, ambipolar charge-transport in a DPP-benzotriazole copolymer by side-chain engineering

Author

Gruber, Mathias, Jung, Seok-Heon, Schott, Sam, Venkateshvaran, Deepak, Kronemeijer, Auke Jisk, Andreasen, Jens Wenzel, McNeill, Christopher R., Wong, Wallace W H, Shahid, Munazza, Heeney, Martin, Lee, Jin Kyun, Sirringhaus, Henning, Gruber, Mathias, Jung, Seok-Heon, Schott, Sam, Venkateshvaran, Deepak, Kronemeijer, Auke Jisk, Andreasen, Jens Wenzel, McNeill, Christopher R., Wong, Wallace W H, Shahid, Munazza, Heeney, Martin, Lee, Jin Kyun, and Sirringhaus, Henning

Abstract

In this article we discuss the synthesis of four new low band-gap co-polymers based on the diketopyrrolopyrrole (DPP) and benzotriazole (BTZ) monomer unit. We demonstrate that the BTZ unit allows for additional solubilizing side-chains on the co-monomer and show that the introduction of a linear side-chain on the DPP-unit leads to an increase in thin-film order and charge-carrier mobility if a sufficiently solubilizing, branched, side chain is attached to the BTZ. We compare two different synthetic routes, direct arylation and Suzuki-polycondensation, by a direct comparison of polymers obtained via the two routes and show that direct arylation produces polymers with lower electrical performance which we attribute to a higher density of chain Furthermore we demonstrate that a polymer utilizing this design motif and synthesized via Suzuki-polycondensation ((l-C18)-DPP-(b-C17)-BTZ) exhibits exceptionally high and near balanced average electron and hole mobilities >2 cm2 V-1 s-1 which are among the highest, robustly extracted mobility values reported for DPP copolymers in a top-gate configuration to date. Our results demonstrate clearly that linear side chain substitution of the DPP unit together with co-monomers that allow for the use of sufficiently long or branched solubilizing side chains can be an attractive design motif for solution processable, high mobility DPP copolymers.

Published
2015

275. Ballistic-Electron-Emission Microscopy at Epitaxial Metal/Semiconductor Interfaces(STM-BEEM interfaces)

Author

Kanel, Hans von, Meyer, Thomas, Sirringhaus, Henning, and Lee, Edwin Y.

Subjects
BEEM, CoSi2, BEES, Si(100), Si(111)
Abstract

The invention of ballistic-electron-emission microscopy (BEEM) has made it possible to study hot electron transport across interfaces with a spatial resolution unparalleled before. In order to exploit the limits of the method we have applied BEEM experiments carried out in UHV and at 77 K to epitaxial CoSi_2 films on silicon. CoSi_2/Si may be considered as a model system for the metal/semiconductor interface, because its atomic structure can be rather well controlled experimentally and has been well characterized by transmission electron microscopy. This overview contains a discussion of the various processes leading to contrast in BEEM images for CoSi_2/Si interfaces. The BEEM current may be affected by (a) the atomic surface structure or surface defects, both of which can change the tunneling distribution, (b) inelastic and elastic scattering processes within the metal films and (c) interface scattering or variations of the Schottky barrier height, resulting from interfacial defects. Scattering processes will be shown to be dominant in the case of CoSi_2/Si(111) interfaces, since the Schottky barrier height is not measurably affected by interfacial dislocations and other defects. Here the ultimate resolution limits of the BEEM technique have been reached, in the sense that individual point defects can be resolved. The CoSi_2/Si(100) interface represents a more complicated case, where extended defects lead to significant barrier lowering, whereas interface scattering is obscured by the strong modification of the tunneling distribution by surface reconstructions.

Published
1997

276. Fused electron deficient semiconducting polymers for air stable electron transport.

Author

Onwubiko, Ada, Wan Yue, Jellett, Cameron, Mingfei Xiao, Hung-Yang Chen, Ravva, Mahesh Kumar, Hanifi, David A., Knall, Astrid-Caroline, Purushothaman, Balaji, Nikolka, Mark, Flores, Jean-Charles, Salleo, Alberto, Bredas, Jean-Luc, Sirringhaus, Henning, Hayoz, Pascal, and McCulloch, Iain

Subjects
CHARGE carrier mobility, ELECTRON affinity, TRANSITION metal catalysts, ORGANIC thin films, THIN film transistors, CONFORMATIONAL analysis, ELECTRON transport
Abstract

Conventional semiconducting polymer synthesis typically involves transition metal-mediated coupling reactions that link aromatic units with single bonds along the backbone. Rotation around these bonds contributes to conformational and energetic disorder and therefore potentially limits charge delocalisation, whereas the use of transition metals presents difficulties for sustainability and application in biological environments. Here we show that a simple aldol condensation reaction can prepare polymers where double bonds lock-in a rigid backbone conformation, thus eliminating free rotation along the conjugated backbone. This polymerisation route requires neither organometallic monomers nor transition metal catalysts and offers a reliable design strategy to facilitate delocalisation of frontier molecular orbitals, elimination of energetic disorder arising from rotational torsion and allowing closer interchain electronic coupling. These characteristics are desirable for high charge carrier mobilities. Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors. [ABSTRACT FROM AUTHOR]

Published
2018
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278. Polaron spin dynamics in high-mobility polymeric semiconductors

Author

Schott, Sam, Chopra, Uday, Lemaur, Vincent, Melnyk, Anton, Olivier, Yoan, Di Pietro, Riccardo, Romanov, Igor, Carey, Remington, Jiao, Xuechen, Jellett, Cameron, Little, Mark, Marks, Adam, McNeill, Christopher, McCulloch, Iain, McNellis, Erik, Andrienko, Denis, Beljonne, David, Sinova, Jairo, and Sirringhaus, Henning

Abstract

Polymeric semiconductors exhibit exceptionally long spin lifetimes, and recently observed micrometre spin diffusion lengths in conjugated polymers demonstrate the potential for organic spintronics devices. Weak spin–orbit and hyperfine interactions lie at the origin of their long spin lifetimes, but the coupling mechanism of a spin to its environment remains elusive. Here, we present a systematic study of polaron spin lifetimes in field-effect transistors with high-mobility conjugated polymers as an active layer. We demonstrate how spin relaxation is governed by the charges’ hopping motion at low temperatures, whereas an Elliott–Yafet-like relaxation due to a transient localization of the carrier wavefunctions is responsible for spin relaxation at high temperatures. In this regime, charge, spin and structural dynamics are intimately related and depend sensitively on the local conformation of polymer backbones and the crystalline packing of the polymer chains. The long spin lifetimes observed in polymeric semiconductors hold promise for potential applications. A careful study untangles the main mechanism behind them.

Published
2019
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279. Bulk Incorporation of Molecular Dopants into Ruddlesden–Popper Organic Metal–Halide Perovskites for Charge Transfer Doping (Adv. Funct. Mater. 38/2023).

Author

Lee, Jonghoon, Baek, Kyeong‐Yoon, Lee, Jeongjae, Ahn, Heebeom, Kim, Yongjin, Lim, Hyungbin, Kim, Yeeun, Woo, Jaeyong, Stranks, Samuel D., Lee, Sung Keun, Sirringhaus, Henning, Kang, Keehoon, and Lee, Takhee

Subjects
PEROVSKITE, CHARGE transfer, ELECTRIC conductivity
Abstract

Keywords: 2D perovskites; metal-halide perovskites; molecular doping EN 2D perovskites metal-halide perovskites molecular doping 1 1 1 09/22/23 20230919 NES 230919 B Molecular Doping b In article number 2302048, Keehoon Kang, Takhee Lee, and co-workers demonstrate a novel immersion doping strategy for enhancing the electrical conductivity of 2D perovskites. 2D perovskites, metal-halide perovskites, molecular doping Immersion of perovskite films in dopant solution induces bulk incorporation of molecular dopants within the organic spacer layer, a strategy for which specific doping conditions for maximizing the conductivity are formulated. [Extracted from the article]

Published
2023
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280. Electrons in the fast lane

Author

Sirringhaus, Henning

Subjects
Transistors -- Usage -- Electric properties -- Research, Electron transport -- Research -- Usage -- Electric properties, Environmental issues, Science and technology, Zoology and wildlife conservation, Usage, Research, Electric properties
Abstract

Organic semiconductors that operate through the conduction of positive charges are the first choice for use in printable electronic circuitry. A device that uses electrons instead has just joined the rankings, Transistors, the semiconductor electronic switches at the heart of any integrated circuit, come in two main flavours: p-type transistors, which switch on when a negative voltage is applied to the [...]

Published
2009

285. Photoluminescence: Local Versus Long-Range Diffusion Effects of Photoexcited States on Radiative Recombination in Organic-Inorganic Lead Halide Perovskites (Adv. Sci. 9/2015)

Author

Vrućinić, Milan, primary, Matthiesen, Clemens, additional, Sadhanala, Aditya, additional, Divitini, Giorgio, additional, Cacovich, Stefania, additional, Dutton, Sian E., additional, Ducati, Caterina, additional, Atatüre, Mete, additional, Snaith, Henry, additional, Friend, Richard H., additional, Sirringhaus, Henning, additional, and Deschler, Felix, additional

Published
2015
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286. Local Versus Long-Range Diffusion Effects of Photoexcited States on Radiative Recombination in Organic-Inorganic Lead Halide Perovskites

Author

Vrućinić, Milan, primary, Matthiesen, Clemens, additional, Sadhanala, Aditya, additional, Divitini, Giorgio, additional, Cacovich, Stefania, additional, Dutton, Sian E., additional, Ducati, Caterina, additional, Atatüre, Mete, additional, Snaith, Henry, additional, Friend, Richard H., additional, Sirringhaus, Henning, additional, and Deschler, Felix, additional

Published
2015
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292. Chalcogenophene Comonomer Comparison in Small Band Gap Diketopyrrolopyrrole-Based Conjugated Polymers for High-Performing Field-Effect Transistors and Organic Solar Cells

Author

Ashraf, Raja Shahid, primary, Meager, Iain, additional, Nikolka, Mark, additional, Kirkus, Mindaugas, additional, Planells, Miquel, additional, Schroeder, Bob C., additional, Holliday, Sarah, additional, Hurhangee, Michael, additional, Nielsen, Christian B., additional, Sirringhaus, Henning, additional, and McCulloch, Iain, additional

Published
2015
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295. All-Inkjet-Printed, All-Air-Processed Solar Cells

Author

Jung, Sungjune, Sou, Antony, Banger, Kulbinder K., Ko, Doohyun, Chow, Chi Yung Philip, McNeill, Christopher R., Sirringhaus, Henning, Jung, Sungjune, Sou, Antony, Banger, Kulbinder K., Ko, Doohyun, Chow, Chi Yung Philip, McNeill, Christopher R., and Sirringhaus, Henning

Abstract

The prospective of using direct-write printing techniques for the manufacture of organic photovoltaics (OPVs) has made these techniques highly attractive. OPVs have the potential to revolutionize small-scale portable electronic applications by directly providing electric power to the systems. However, no route is available for monolithically integrating the energy-harvesting units into a system in which other components, such as transistors, sensors, or displays, are already fabricated. Here, the fabrication and the measurement of inkjet-printed, air-processed organic solar cells is reported for the first time. Highly controlled conducting and semiconducting films using engineered inks for inkjet printing enable good efficiencies for printed OPVs between H2 and 5% power conversion efficiency. The results show that inkjet printing is an attractive digital printing technology for cost-effective, environmentally friendly integration of photovoltaic cells onto plastic substrates.

Published
2014

300. Approaching disorder-free transport in high-mobility conjugated polymers

Author

Venkateshvaran, Deepak, primary, Nikolka, Mark, additional, Sadhanala, Aditya, additional, Lemaur, Vincent, additional, Zelazny, Mateusz, additional, Kepa, Michal, additional, Hurhangee, Michael, additional, Kronemeijer, Auke Jisk, additional, Pecunia, Vincenzo, additional, Nasrallah, Iyad, additional, Romanov, Igor, additional, Broch, Katharina, additional, McCulloch, Iain, additional, Emin, David, additional, Olivier, Yoann, additional, Cornil, Jerome, additional, Beljonne, David, additional, and Sirringhaus, Henning, additional

Published
2014
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