433 results on '"Silard, A."'
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252. Performance of n+-p-p+ silicon solar cells fabricated through masked ion implantation
253. FULL THERMAL INVESTIGATION OF THE INTEGRATED CIRCUIT μA726
254. Consuming Low Energy in Generation of Power Half-Sine Waves with High Rate of Current Rise
255. Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation
256. Effective intrinsic concentrationniein degenerately doped silicon
257. Design/technological experiments on low cost, BSF-type, bifacial solar cells fabricated on large-area silicon wafers
258. Transient thermal response of amplifying gate thyristors
259. Temperature distribution in nonlinear multilayer structures with several heat sources
260. Two-dimensional computer design of dual-ring thyristors
261. Efficiency of gate control in double-interdigitated (TIL) GTO thyristors
262. Refined method for measurement of small-signal alphas of thyristors
263. Electro-Optical Characteristics of Shallow Silicon Junctions Fabricated Through Masked Ion Implantation
264. Computer-aided experimental investigation of the correct turn-on in thyristors with amplifying gate
265. On the History of the Workers' Councils
266. An approach to the heat flow problems and transient temperature rise in nonlinear semiconductor media
267. An approach to the heat flow problems and transient temperature rise in nonlinear semiconductor media
268. Analysis of ‘anomalous’ I- V characteristics of silicon p+-n-n+photodiodes fabricated by boron implant through SiO2layers
269. Increasing the current-handling capability of TIL GTO thyristors up to its limits—II. Experimental
270. TILBW Bipolar Power Switching Transistor
271. Simple method for increasing current gain and voltage ratings of power transistors
272. Gate-assisted turn-off effect in TIL-type thyristors
273. Silicon optical sensors fabricated through masked ion implantation
274. High efficiency, large-area p+-n-n+ silicon solar cells
275. An Introduction
276. Gate-assisted turn-off effect in TIL-type thyristors
277. A novel GTO thyristor structure
278. Lonely, but Different, at the Top and Bottom.
279. An Introduction
280. Predicting the surge capability of power thyristors
281. Ultrahigh-voltage double-interdigitated (TIL) gate-assisted turnoff thyristors
282. Computer-aided experimental investigation of the correct turn-on in thyristors with amplifying gate
283. Double-interdigitated (TIL) bipolar transistor with heavily doped base wells
284. Two-dimensional computer design of dual-ring thyristors
285. Increasing IATO in TIL GTO thyristors
286. Simple method for increasing current gain and voltage ratings of power transistors
287. Transient thermal response of amplifying gate thyristors
288. Monitoring the final on-zone dynamics in TIL GTO thyristors
289. Refined method for measurement of small-signal alphas of thyristors
290. The Differential Temporal Effects of Leader Emotion Display on Follower Engagement.
291. The Price of Wearing the Crown: The Antecedents and Outcomes of Leader Loneliness.
292. A Constitutional Forecast: Demise of the 'State Action' Limit on the Equal Protection Guarantee
293. Fire on Ice: How Emotion Juxtaposition Generates Leadership Effectiveness.
294. The Internet Bait-and-Switch: The Influence of Connectivity on Contactedness and Connectedness.
295. A novel GTO thyristor structure.
296. Correct analytical model of the output characteristics of vertical power MOSFETs.
297. A novel power GTO thyristor.
298. FET-controlled, double-interdigitated (TIL) bipolar power transistors.
299. Novel power bipolar devices.
300. Electro-Optical Characteristics of Shallow Silicon Junctions Fabricated Through Masked Ion Implantation.
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