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251. Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

254. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

256. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm

257. Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics

258. Elaboration and Characterization of Interfacial Abruptness in Si/SiGe Heterostructured Nanowires obtained by VLS-CVD Method

259. Elaboration and Characterization of Si-SiGe Axial Heterostructures in Nanowires, poster presentation

272. Transducing energy loss in water electrolysis with a 0D ion-sensitive field-effect transistor

273. Strain effect on the electronic properties of thiolated sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

274. Effet des contraintes sur les propriétés électroniques de nanocristaux facettés d'or thiolés de 10 nm de diamètre

275. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

276. Strain effect on the electronic properties of molecular junctions on sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

277. Highly oriented (00.2) aluminum nitride close to single crystal using (111) titanium nitride buffer layer for microwave high power electro-acoustic devices

278. Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

279. Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

283. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

284. Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

285. Strain effect on the electronic properties of thiolated 10-nm-diameter facetted gold nanocrystals

286. Study of ohmic contact formation on diamond surfaces

287. Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition

288. Comparaison des modes d'imagerie fond noir TEM et STEM pour l'observation de structures moléculaires

289. B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

290. Investigation of dopants in silicon nanowires grown by solid-liquid-solid or vapor-liquid-solid

291. Electrical and structural properties of as-grown core-shell silicon nanowires

292. Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors

293. Charge generation efficiency of core-shell Si nanowires

294. INCLINE - Inductively coupled plasma for CMOS-compatible etching of III-V integrated laser sources

296. Abrupt GaP/Si hetero-interface using bistepped Si buffer

297. Comparative molecular dark field modes in cell imaging

298. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

300. Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE

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