251. Terrestrial neutron-induced single events in GaN.
- Author
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Munteanu, D. and Autran, J.L.
- Subjects
- *
NEUTRON irradiation , *LINEAR energy transfer , *SINGLE event effects , *WIDE gap semiconductors , *ALPHA rays , *NEUTRONS - Abstract
We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction. • Interactions of atmospheric neutrons with GaN materials are investigated using Geant4 simulations. • Secondaries produced in GaN are characterized in terms of energy, linear energy transfer and range. • Single event transients induced by alpha particles in GaN bulk junction are simulated. • Implications for the occurrence of single events in GaN material with respect to Si are discussed. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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