264 results on '"Mingwei Zhu"'
Search Results
252. Crystallization of Ferroelectric Lead Zirconate Titanate Thin Films by Microwave Annealing at Low Temperatures.
- Author
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Zhanjie Wang, Yanna Chen, Yuka Otsuka, Mingwei Zhu, Ziping Cao, and Kokawa, Hiroyuki
- Subjects
CRYSTALLIZATION ,TITANATES ,FERROELECTRIC thin films ,IRRADIATION ,X-ray diffraction ,PEROVSKITE ,METALS at low temperatures - Abstract
Lead zirconate titanate (PZT) thin films were coated on Pt/Ti/ SiO
2 /Si substrates by the sol-gel method and then crystallized by microwave annealing using a single-mode 2.45 GHz microwave irradiation system in the magnetic field. The crystalline phases and microstructures as well as the ferroelectric properties of the PZT films were investigated as a function of the elevated temperature generated by microwave irradiation, and the phase transition in the crystallization of the PZT thin films was discussed. X-ray diffraction analysis and transmission electron microscopic study indicated that the crystallization to the perovskite phase in the PZT films by microwave annealing started at 430°C, and mostly finished at 450°C for 30 min. The remanent polarization of the PZT films increased with the increasing annealing temperature, and the lowest temperature required to obtain perovskite PZT films with good ferroelectric properties in the microwave irradiation processing was 450°C, which is much lower than that in conventional thermal processing. [ABSTRACT FROM AUTHOR]- Published
- 2011
- Full Text
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253. Activation of JNK signaling links lgl mutations to disruption of the cell polarity and epithelial organization in Drosophila imaginal discs.
- Author
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Mingwei Zhu, Tianchi Xin, Shunyan Weng, Yin Gao, Yingjie Zhang, Qi Li, and Mingfa Li
- Subjects
LETTERS to the editor ,CANCER research - Abstract
A letter to the editor is presented regarding a study which was conducted to analyze the potential function of c-Jun N-terminal kinase (JNK) signaling in lethal giant larvae (lgl) tumor development.
- Published
- 2010
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254. Effect of different experimental conditions on biodegradable polylactide membranes prepared with supercritical CO2 as nonsolvent.
- Author
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Qun Xu, Maizhi Pang, Qi Peng, Yu Jiang, Jianbo Li, Hongying Wang, and Mingwei Zhu
- Published
- 2005
255. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire.
- Author
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Yufeng Li, Shi You, Mingwei Zhu, Liang Zhao, Wenting Hou, Detchprohm, T., Taniguchi, Y., Tamura, N., Tanaka, S., and Wetzel, C.
- Subjects
LIGHT emitting diodes ,SAPPHIRES ,EPITAXY ,QUANTUM wells ,TRANSMISSION electron microscopy ,QUANTITATIVE research - Abstract
Green GaInN/GaN quantum well light-emitting diode (LED) wafers were grown on nanopatterned c-plane sapphire substrate by metal-organic vapor phase epitaxy. Without roughening the chip surface, such LEDs show triple the light output over structures on planar sapphire. By quantitative analysis the enhancement was attributed to both, enhanced generation efficiency and extraction. The spectral interference and emission patterns reveal a 58% enhanced light extraction while photoluminescence reveals a doubling of the internal quantum efficiency. The latter was attributed to a 44% lower threading dislocation density as observed in transmission electron microscopy. The partial light output power measured from the sapphire side of the unencapsulated nanopatterned substrate LED die reaches 5.2 mW at 525 nm at 100 mA compared to 1.8 mW in the reference LED. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF
256. Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates.
- Author
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Detchprohm, Theeradetch, Mingwei Zhu, Yufeng Li, Liang Zhao, Shi You, Wetzel, Christian, Preble, Edward A., Paskova, Tanya, and Hanser, Drew
- Subjects
- *
LIGHT emitting diodes , *ELECTROLUMINESCENT devices , *QUANTUM wells , *OPTICAL communications , *ENERGY-band theory of solids - Abstract
We report the development of 480 nm cyan and 520 nm green light emitting diodes (LEDs) with a highly stable emission wavelength. The shift is less than 3 nm when the drive current density is changed from 0.1 to 38 A/cm2. LEDs have been obtained in GaInN-based homoepitaxy on nonpolar m-plane GaN bulk substrates. For increasing emission wavelength we find a large number of additional dislocations generated within the quantum wells (2×108 to ∼1010 cm2) and a decrease in the electroluminescence efficiency. This suggests that the strain induced generation of defects plays a significant role in the performance limitations. [ABSTRACT FROM AUTHOR]
- Published
- 2010
- Full Text
- View/download PDF
257. Green light emitting diodes on a-plane GaN bulk substrates.
- Author
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Detchprohm, Theeradetch, Mingwei Zhu, Yufeng Li, Yong Xia, Wetzel, Christian, Preble, Edward A., Liu, Lianghong, Paskova, Tanya, and Hanser, Drew
- Subjects
- *
LIGHT emitting diodes , *ELECTROLUMINESCENT devices , *CRYSTAL texture , *WAVELENGTHS , *DENSITY , *QUANTUM wells - Abstract
We report the development of 520–540 nm green light emitting diodes (LEDs) grown along the nonpolar a axis of GaN. GaInN/GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphire. Both structures show a much smaller wavelength blue shift for increasing current density (<10 nm for 0.1 to 12.7 A/cm2) than conventional LEDs grown along the polar c axis. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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- View/download PDF
258. UV light emitter on bulk semipolar (11-22) GaN
- Author
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Tanya Paskova, Wenting Hou, Edward A. Preble, K. Evans, Michael Dibiccari, Shi You, Theeradetch Detchprohm, Christian Wetzel, Mingwei Zhu, Liang Zhao, and Christoph Stark
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Materials science ,business.industry ,Wide-bandgap semiconductor ,Gallium nitride ,Heterojunction ,Epitaxy ,law.invention ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Quantum efficiency ,business ,Quantum well ,Light-emitting diode ,Visible spectrum - Abstract
A 392 nm GaInN-based UV light emitter has been demonstrated by homoepitaxial growth technique aiming to improve quantum efficiency by crystalline perfection of the heterostructures on naturally stable semipolar (11–22) bulk GaN.
259. Structural analysis in low-V-defect blue and green GaInN/GaN light emitting diodes
- Author
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Y. Xia, W. Zhao, J. Senawiratne, Edward A. Preble, Lianghong Liu, Theeradetch Detchprohm, Christian Wetzel, Shi You, Drew Hanser, Mingwei Zhu, and Yufeng Li
- Subjects
Materials science ,business.industry ,chemistry.chemical_element ,Nitride ,Epitaxy ,law.invention ,chemistry ,law ,Sapphire ,Optoelectronics ,Dislocation ,business ,Order of magnitude ,Indium ,Quantum well ,Light-emitting diode - Abstract
In this study, we characterized the structural defects in blue and green GaInN/GaN LEDs grown on c-plane bulk GaN and sapphire substrates. Low density large V-defects with diameters around 600 nm were found in the blue LEDs on bulk GaN. They were initiated by edge-type threading dislocations (TDs) around the homoepitaxial growth interface. On the other hand, a high density 7×109 cm−2 of smaller V-defects with sidewalls on {1101} facets was observed in the active region of green LEDs on sapphire. Their diameter ranges from 150 to 200 nm. Misfit dislocations (MDs) generated in the quantum wells are found to initiate these V-defects. With optimizing the epitaxial growth conditions, the generation of MDs and their smaller V-defects was largely suppressed. As a result, the light output power improved by one order of magnitude. For green LEDs on bulk GaN, another unique type of defect was found in the active region: an inclined dislocation pair (IDP). In it a pair of dislocations propagate at a tilt angle of 18 to 23° from the [0001] growth direction towards 100>. This defect seems to be a path of strain relief in the high indium composition quantum wells.
260. Charge profiling of the p-AlGaN electron blocking layer in AlGaInN light emitting diode structures
- Author
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E. Fred Schubert, W. Zhao, Christian Wetzel, Yufeng Li, Mingwei Zhu, Y. Xia, and Theeradetch Detchprohm
- Subjects
Diffraction ,Profiling (computer programming) ,Materials science ,business.industry ,Charge (physics) ,Heterojunction ,law.invention ,Characterization (materials science) ,Active layer ,Optics ,law ,Optoelectronics ,business ,Layer (electronics) ,Light-emitting diode - Abstract
Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs) is critical to their performance optimization and time-to-failure analysis. Typically, device performance data needs to be corroborated with structural information such as layer thicknesses, charge profiles, and the absolute location of the pn-junction. Here, non-destructive testing by capacitance-voltage profiling is being applied to AlGaInN LED structures. Within a large set of samples with different active layer geometry, we observe distinct layers of high mobile charge accumulation. We correlate those with layer thicknesses derived from an x-ray diffraction analysis of the corresponding epiwafers. In this way, we identify the charge maxima as the upper and lower interfaces of the p-type AlGaN electron blocking layer to the neighboring GaN layers. By means of this successful analysis, we now have the opportunity to monitor epi process performance and stability as well as device degradation progress quasi-continuously over the device lifetime in a non-destructive mode.
261. Green light emitting diodes under photon modulation
- Author
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Theeradetch Detchprohm, Y. Xia, Mingwei Zhu, Yufeng Li, W. Zhao, Christian Wetzel, and J. Senawiratne
- Subjects
Photocurrent ,Materials science ,Photoluminescence ,business.industry ,Electroluminescence ,law.invention ,law ,Optoelectronics ,Spontaneous emission ,business ,Current density ,Quantum well ,Diode ,Light-emitting diode - Abstract
With an external laser excitation, the electroluminescence (EL) of GaInN/GaN green light emitting diodes (LEDs) grown on sapphire by metal organic vapor phase epitaxy has been investigated. The EL was found significantly enhanced under this bias and the difference can not merely be attributed to additional photoluminescence (PL). Under 325 nm photon bias, the EL enhancement starts at its highest value and decreases along with an increase of the LED current. Under 408 nm and 488 nm bias, it increases first to a value smaller than that of the 325 nm bias and then decreases with a much lower rate along the current increase. The EL enhancement is attributed to the more efficient carrier injection into quantum wells (QWs) resulting from the screening of the QW polarization by photon bias. Therefore, an enhanced balance of majority and minority carriers was obtained resulting in a better radiative recombination rate. Meanwhile, the current-voltage characteristics show a negative current first and then a voltage reduction as forward voltage increases. The reverse photocurrent indicates carrier loss due to the solar cell effect in our LED device while at high current region the carrier loss is attributed to another effect controlled by the external electrical field. At the balance point of those two effects, the EL enhancement is the highest. These findings clarify the transition from highly efficient radiative recombination at low current density to the region of efficiency droop at high current densities.
262. Low-temperature cathodoluminescence mapping of green, blue, and UV GaInN/GaN LED dies
- Author
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Yufeng Li, Theeradetch Detchprohm, Y. Xia, Mingwei Zhu, J. Senawiratne, Christian Wetzel, and W. Zhao
- Subjects
Materials science ,business.industry ,Cathodoluminescence ,Secondary electrons ,law.invention ,Solid-state lighting ,Wavelength ,Optics ,law ,Optoelectronics ,Light emission ,business ,Luminescence ,Image resolution ,Light-emitting diode - Abstract
GaInN based light emitting diodes (LEDs) play an important role as energy efficient light sources in solid state lighting. A controversial discussion addresses the origin of lateral light emission variations and their correlation with either of the identified defects, e.g., threading dislocations and V-defects. In order to establish any possible correlation of defects and luminescence centers, we analyze three UV, blue and green LED dies by microscopic mapping of spectroscopic cathodoluminescence and secondary electrons at variable low temperature from 7 K to room temperature. Particular effort is being placed on a quantitative analysis of the luminescence signal. Image intensities are not being scaled and offset for highest contrast as otherwise typical for imaging mode. In standard configuration, we analyze image areas of (0.037 mm)2 with pixel resolution of 72 nm. Following regions of strong and weak emission we find that remain bright and dark respectively even at low temperature. Those variations increase with the mean emission wavelength of the LEDs and with temperature. The largest peak wavelength variation associated with the intensity contrast was observed in the green LEDs and amounts to 5 nm. Here the peak wavelength is higher in the dark spots than in the bright ones. This finding corresponds to the general trend when comparing the lower efficiency in longer wavelength green emitters to the blue ones.
263. Microstructure evolution of zinc oxide films derived from dip-coating sol-gel technique: formation of nanorods through orientation attachment.
- Author
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Nan Huang, Chao Sun, Mingwei Zhu, Bin Zhang, Jun Gong, and Xin Jiang
- Subjects
ZINC oxide thin films ,MICROSTRUCTURE ,METAL coating ,NANOTECHNOLOGY ,MOLECULAR structure ,COLUMNAR structure (Metallurgy) ,WURTZITE ,NANOSTRUCTURED materials - Abstract
ZnO:Al thin films with Al incorporation of 0-20 at.% were deposited through the sol-gel technique. Such a film undergoes a significant microstructure development, from columnar to granular structures and then nanorod arrays with increasing Al content. The important role of Al incorporation level in the microstructure evolution was determined using scanning electron microscopy, x-ray photoelectron spectroscopy and transmission electron microscopy. At low Al level, the transition from columnar to granular grains can be attributed to the coarsening barrier resulting from the introduction of Al into the matrix. However, oriented structures of ZnO nanorod arrays are formed at a high Al level. TEM investigation reveals that a nanorod with smooth morphology at the top and rough morphology at the bottom has a single-crystalline wurtzite structure, which is the aggregation of nanoparticles of a few nanometers in size formed through the orientation attachment mechanism followed by epitaxial growth on the aggregated particles. Finally, the physical properties of the ZnO films with different degrees of Al concentration are discussed. Such detailed microstructure studies may aid the understanding of the doping effect process on the growth of a film, which is essential to altering its physical or chemical properties. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF
264. Predictive Value of Geriatric Nutritional Risk Index in Older Adult Cancer Patients.
- Author
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Liu C, Lu Z, Chen L, Yang X, Xu J, Cui H, and Zhu M
- Subjects
- Aged, Geriatric Assessment methods, Humans, Nutrition Assessment, Nutritional Status, Retrospective Studies, Risk Assessment, Risk Factors, Malnutrition complications, Malnutrition diagnosis, Malnutrition epidemiology, Neoplasms complications
- Abstract
Background and Aims: To compare the association of geriatric nutritional risk index (GNRI) and controlling nutritional status (CONUT) scores with malnutrition, and to study their association with clinical outcomes in older adult cancer patients., Methods: This retrospective analysis was conducted on 854 older adult cancer patients collected from 34 hospitals in 18 cities in China between June and September 2014. Anthropometric and hematological examination results at admission were collected, and subjective global assessment was used. Clinical outcomes, such as complications, length of hospital stays, and hospital costs, were recorded. Receiver operating characteristic curves were used to evaluate the accuracy of the two nutritional assessment tools for malnutrition. The association between GNRI and CONUT score and clinical outcomes was analyzed using the chi-square test, t-test, or rank sum test., Results: Among 854 patients with cancer, the prevalence of malnutrition was 42.7%. Compared with subjective global assessment, the GNRI had a significantly higher accuracy than the CONUT score in predicting malnutrition (area under the curve 0.704, 95% confidence interval, 0.658 - 0.750, P < 0.001). The GNRI was significantly associated with the occurrence of complications (χ2 = 4.985, P = 0.026), and low GNRI (≤98) was associated with a longer length of hospital stay (t = -2.179, P = 0.030)., Conclusions: The GNRI may be used to assess malnutrition in older adult cancer patients and can predict poor clinical outcomes in these patients., Competing Interests: The authors declare that they have no conflicts of interest.
- Published
- 2022
- Full Text
- View/download PDF
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