251. 40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes
- Author
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K. Fukuoka, A. Tanaka, K. Gen-ei, M. Okada, O. Horiuchi, Watanabe Minoru, H. Okuda, Y. Itoh, and N. Shimada
- Subjects
Materials science ,Relative intensity noise ,business.industry ,Doping ,Optical power ,Heterojunction ,Laser ,Atomic and Molecular Physics, and Optics ,law.invention ,Optics ,law ,Modulation ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Frequency modulation ,Diode - Abstract
High-power and high-temperature operation of 40 mW at 100/spl deg/C has been realized in 655-nm band multiple-quantum-well (MQW) laser diodes. Both low threshold current density and low optical power density have been achieved by optimizing InGaP-InGaAlP strained MQW separate-confinement heterostructure, high doping for acceptors in p-cladding layer and adopting low-optical-loss high-reflectivity-coating at the rear facet. Fundamental-transverse-mode operation, up to 70 mW, was obtained. High-frequency and large-intensity modulation characteristics above 1 GHz were demonstrated. The relative intensity noise values were as low as -135 dB/Hz under an optical feedback with high-frequency modulation. Stable operation of 30 mW at 70/spl deg/C over 1000 h was accomplished.
- Published
- 1999
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