251. Self-consistent study of electron confinement to metallic thin films on solid surfaces
- Author
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Eugene V. Chulkov, Martti J. Puska, E. Ogando, Nerea Zabala, Department of Applied Physics, Aalto-yliopisto, Aalto University, Universidad del País Vasco, Ministerio de Ciencia y Tecnología (España), Academy of Finland, European Commission, Perustieteiden korkeakoulu, School of Science, and Teknillisen fysiikan laitos
- Subjects
Materials science ,Band gap ,Quantum well states ,Jellium ,Scanning tunneling spectroscopy ,FOS: Physical sciences ,Overlayer ,law.invention ,Pseudopotential ,symbols.namesake ,Condensed Matter::Materials Science ,law ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Electronic band structure ,Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed matter physics ,Physics ,Fermi level ,Electron confinement ,Materials Science (cond-mat.mtrl-sci) ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,symbols ,Scanning tunneling microscope - Abstract
We present a method for density-functional modeling of metallic overlayers grown on a support. It offers a useful tool to study nanostructures, combining the power of self-consistent pseudopotential calculations with the simplicity of a one-dimensional approach. The model is illustrated for Pb layers grown on the Cu(111) surface. The analysis provides the strength of the electron confinement barriers in thin slabs with accuracy, supporting the interpretation of the quantum well state spectra measured by scanning tunneling spectroscopy. On the other hand, it offers a benchmark to check the simple analytical models commonly used in the literature to study metallic films on semiconducting or metallic surfaces. As a result, some deficiencies are detected in the applicability of those models, which often lead to an overestimation of the number of wetting layers. Finally, an improved formula is proposed., We acknowledge partial support by the University of the Basque Country s9/UPV00224.310-14553/2002d, the Basque Hezkuntza Unibertsitate eta Ikerkuntza Saila and the Spanish Ministerio de Ciencia y Tecnología MAT 2001-0946 and MAT2002-04087-CO2-O1d. This work was also partially supported by the Academy of Finland through its Centre of Excellence Program s2000–2005d and by the European Community sixth Framework Network of Excellence NANOQUANTA sNMP4-CT-2004-500198d.
- Published
- 2004
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