251. Antimonide type-II 'W' lasers: growth studies and guided-mode leakage into substrate
- Author
-
Igor Vurgaftman, Chadwick L. Canedy, Chul Soo Kim, William W. Bewley, Jerry R. Meyer, and Mijin Kim
- Subjects
Photoluminescence ,Materials science ,business.industry ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Spectral line ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Antimonide ,Optoelectronics ,Wafer ,business ,Lasing threshold ,Quantum well ,Leakage (electronics) - Abstract
The lasing characteristics of mid-IR type-II “W” [InAs/GaInSb/InAs/AlAsSb] structures are found to correlate strongly with the growth conditions and low-temperature photoluminescence (PL) properties. The highest PL intensities and narrowest PL lines are obtained when the wafers are grown at ≈480–510°C with mixed interface bonds. A number of structures grown at a non-optimal lower temperature (≈425°C) nonetheless yielded lower lasing thresholds, lower internal losses, and longer Shockley-Read lifetimes than any grown previously on the present Riber 32P MBE system. All of the laser spectra display regularly-spaced multiple peaks that are consistent with periodic modulation of the cavity loss due to mode-leakage into the GaSb substrate.
- Published
- 2004
- Full Text
- View/download PDF