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251. Electro-grafted Organic Memristors as Synapses: Spike Timing-Dependent Plasticity and Supervised Function Learning

Author

Lin, Yu-Pu, Bennett, Christopher H., Vodenicarevic, Damir, Chabi, Djaafar, Querlioz, Damian, Cabaret, Théo, Balan, Adrian, Jousselme, Bruno, Gamrat, Christian, Klein, Jacques-Olivier, Derycke, Vincent, Laboratoire Innovation en Chimie des Surfaces et NanoSciences (LICSEN UMR 3685), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Calculateurs Embarqués et Image (LCEI), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Innovation en Chimie des Surfaces et NanoSciences (LICSEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), and Laboratoire d'Intégration des Systèmes et des Technologies (LIST)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry
Abstract

International audience; Neuromorphic computing is an efficient way to handle complex tasks such as image recognition andclassification. Hardware implementation of an artificial neural network (ANN) requires arrays of scalablememory elements to act as artificial synapses. Memristors, which are two-terminal analog memory devices,are excellent candidates for this application as their tunable resistance could be used to code and storesynaptic weights. We studied metal-organic-metal memristors in which the organic layer is a dense androbust electro-grafted thin film of redox complexes. The process allows fabricating planar and verticaljunctions, as well as small crossbar arrays. The unipolar devices display non-volatile multi-levelconductivity states with high Rmax/Rmin ratio and two thresholds. We characterized in depth thecharacteristics of individual memristors with respect to the targeted synaptic function. We notably showedthat they possess the Spike Timing-Dependent Plasticity (STDP) property (their conductivity evolves as afunction of the time-delay between incoming pulses at both terminals), which is critical for futureapplications in neuromorphic circuits based on unsupervised learning. In parallel, we implemented memristors as synapses in a simple prototype: a mixed circuit with the neuron implemented withconventional electronics. This ANN is able to learn linearly separable 3-input logic functions through aniterative supervised learning algorithm inspired by the Widrow-Hoff rule.

Published
2016

252. Carbon-based optoelevtronics on silicon using semiconducting single wall carbon nanotubes

Author

Balestrieri, Matteo, Keita, A., Duran-Valdeiglesias, Elena, Sarti, Francesco, Caselli, Niccolò, Zhang, W., Alonso-Ramos, C, Le Roux, Xavier, Yang, H., Cassan, Eric, Bezugly, Viktor, Biccari, Francesco, Vinattieri, Anna, Cuniberti, Gianaurelio, Gurioli, Massimo, Derycke, Vincent, Vivien, Laurent, Filoramo, Arianna, Laboratoire Innovation en Chimie des Surfaces et NanoSciences (LICSEN UMR 3685), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Università degli Studi di Firenze = University of Florence (UniFI), Institut d'électronique fondamentale (IEF), Leibniz Institute for Solid State and Materials Research (IFW Dresden), Leibniz Association, Center for Advancing Electronics in Dresden (CFAED), Technische Universität Dresden = Dresden University of Technology (TU Dresden), European Project: 618025,EC:FP7:ICT,FP7-ICT-2013-C,CARTOON(2013), Laboratoire Innovation en Chimie des Surfaces et NanoSciences (LICSEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), and Università degli Studi di Firenze = University of Florence [Firenze] (UNIFI)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry
Abstract

International audience; Single-wall carbon nanotubes (SWNTs) are known for their exceptional physical properties ranging from mechanics to electronics and optics. These properties are expected to give rise to innovative applications, especially when nanotubes are incorporated in new functional devices. However, the conception of an effective SWNT-based electronic or optoelectronic technology faces three main concerns: the extraction of semiconducting SWNTs having the desired optoelectronic characteristics from the as-synthetized poly-disperse mixture; the deposition of high nanotube concentrations at desired areas to increases transport and optical performances and the alignment of nanotubes on the substrate. Using an effective polymer-assisted sorting approach, we obtain highly-selective separation of semiconducting SWNTs that can be coupled with optoelectronic silicon-based devices operating at the telecom wavelength of 1.5 µm. Our modified evaporative self-assembly approach can deposit concentrated SWNT networks with configurations varying from random to highly-oriented assembly. In the latter case, the obtained orientation is particularly favorable for device fabrication and operation. Several configurations enabling photo-detection and electroluminescence at the chip level are currently under investigation and the latest results will be presented.

Published
2016

253. Multiscale approaches to high efficiency photovoltaics

Author

Huang, Yong, Gheno, Alexandre, Rolland, Alain, Pedesseau, Laurent, Vedraine, Sylvain, Durand, Olivier, Bouclé, Johann, Etgar, Lioz, Even, Jacky, Molière, T., Jaffré, A., Alvarez, J., Connolly, James, Vincent, L., Hallais, G., Mangelinck, D., Descoins, M., Bouchier, D., Renard, C., Connolly, James Patrick, Koduvelikulathu, Lejo, Mencaraglia, D., Rimada, Julio, Nejim, Ahmed, Sanchez, Guillermo, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), International Solar Energy Research Center (ISE Konstanz e.V.), Université Pierre et Marie Curie - Paris 6 (UPMC), University of Havana (Universidad de la Habana) (UH), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Université Bretagne Loire (UBL)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, The Hebrew University of Jerusalem (HUJ), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-SUPELEC-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris-Sud - Paris 11 (UP11), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), ISC Konstanz e.V., and Universidad de la Havana

Subjects
Engineering, lcsh:TJ807-830, lcsh:Renewable energy sources, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Photovoltaics, 0103 physical sciences, Cost action, lcsh:TJ163.26-163.5, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Simulation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed Matter - Materials Science, Wind power, business.industry, Photovoltaic system, General Engineering, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Solar energy, Renewable energy, lcsh:Energy conservation, Obstacle, Systems engineering, Defragmentation, 0210 nano-technology, business, Physics - Optics, Optics (physics.optics)
Abstract

While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency. The so-called third generation concepts attempt to break this limit through a combination of novel physical processes and new materials and concepts in organic and inorganic systems. Some examples of semi-empirical modelling in the field are reviewed, in particular for multispectral solar cells on silicon (french ANR project MULTISOLSI). Their achievements are outlined, and the limits of these approaches shown. This introduces the main topic of this contribution, which is the use of multiscale experimental and theoretical techniques to go beyond the semi-empirical understanding of these systems. This approach has already led to great advances at modelling which have led to modelling software which is widely known. Yet a survey of the topic reveals a fragmentation of efforts across disciplines, firstly, such as organic and inorganic fields, but also between the high efficiency concepts such as hot carrier cells and intermediate band concepts. We show how this obstacle to the resolution of practical research obstacles may be lifted by inter-disciplinary cooperation across length scales, and across experimental and theoretical fields, and finally across materials systems. We present a European COST Action MultiscaleSolar kicking off in early 2015 which brings together experimental and theoretical partners in order to develop multiscale research in organic and inorganic materials. The goal of this defragmentation and interdisciplinary collaboration is to develop understanding across length scales which will enable the full potential of third generation concepts to be evaluated in practise, for societal and industrial applications., Comment: Draft paper accompanying a plenary presentation to the World Renewable Energy Conference WREC 2015, June 2015, Bucharest. In press (IOP)

Published
2016

254. Pluto's atmosphere from stellar occultations in 2012 and 2013

Author

A. Dias-Oliveira, B. Sicardy, E. Lellouch, R. Vieira-Martins, M. Assafin, J. I. B. Camargo, F. Braga-Ribas, A. R. Gomes-Júnior, G. Benedetti-Rossi, F. Colas, A. Decock, A. Doressoundiram, C. Dumas, M. Emilio, J. Fabrega Polleri, R. Gil-Hutton, M. Gillon, J. H. Girard, G. K. T. Hau, V. D. Ivanov, E. Jehin, J. Lecacheux, R. Leiva, C. Lopez-Sisterna, L. Mancini, J. Manfroid, A. Maury, E. Meza, N. Morales, L. Nagy, C. Opitom, J. L. Ortiz, J. Pollock, F. Roques, C. Snodgrass, J. F. Soulier, A. Thirouin, L. Vanzi, T. Widemann, D. E. Reichart, A. P. LaCluyze, J. B. Haislip, K. M. Ivarsen, M. Dominik, U. Jørgensen, J. Skottfelt, Observatório Nacional/MCTI, Laboratoire d'études spatiales et d'instrumentation en astrophysique (LESIA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Observatório do Valongo, Universidade Federal do Rio de Janeiro, UTFPR, Institut de Mécanique Céleste et de Calcul des Ephémérides (IMCCE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Astéroïdes, comètes, météores et éphémérides (ACME), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, ESO, UEPG, Observatorio Panemno, CASLEO-CONICET, Universite de Liege, PUC, Universidade Nacional de San Juan, Max-Planck-Institut für Astronomie (MPIA), S.P.A.C.E, Instituto de Astrofisica de Andalucia, CSIC (IAA), Appalachian State University, CEPSAR, The Open University, Association T60, Observatoire Midi-Pyrénées, Observatoire Midi-Pyrénées (OMP), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France, Lowell Observatory, Flagstaff, University of North Carolina, School of Chemistry, University of St Andrews, University of Copenhagen, Observatorio Nacional [Rio de Janeiro], Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Observatoire de Paris, PSL Research University (PSL)-PSL Research University (PSL)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC), Observatório Nacional/MCT, PSL Research University (PSL)-PSL Research University (PSL)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Observatório do Valongo/UFRJ [Rio de Janeiro], Universidade Federal do Rio de Janeiro [Rio de Janeiro] (UFRJ), Universidade Estadual de Ponta Grossa, Universidade Estadual de Ponta Grossa - State University of Ponta Grossa (UEPG), Universidad Nacional de San Juan (UNSJ), Arctic and Antarctic Research Institute (AARI), Russian Federal Service for Hydrometeorology and Environmental Monitoring (Roshydromet), European Southern Observatory (ESO), Southwest Research Institute [Boulder] (SwRI), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'Astrophysique et de Géophysique [Liège], Université de Liège, Astrophysique Interprétation Modélisation (AIM (UMR_7158 / UMR_E_9005 / UM_112)), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris Diderot - Paris 7 (UPD7), Instituto de Astrofísica de Andalucía (IAA), Consejo Superior de Investigaciones Científicas [Spain] (CSIC), Department of Physics and Astronomy [Boone], University of North Carolina System (UNC)-University of North Carolina System (UNC), School of Physical Sciences [Milton Keynes], The Open University [Milton Keynes] (OU), Lowell Observatory [Flagstaff], Dynamiques patrimoniales et culturelles (DYPAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC), Universidade Federal do Rio de Janeiro (UFRJ), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Faculty of Science, Technology, Engineering and Mathematics [Milton Keynes], The Open University [Milton Keynes] (OU)-The Open University [Milton Keynes] (OU), Universidad Nacional de San Juan [Argentine] (UNSJ), Astrophysique Interprétation Modélisation (AIM (UMR7158 / UMR_E_9005 / UM_112)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), The Royal Society, and University of St Andrews. School of Physics and Astronomy

Subjects
010504 meteorology & atmospheric sciences, NDAS, FOS: Physical sciences, Astrophysics, 01 natural sciences, Mesosphere, Troposphere, Atmosphere, Settore FIS/05 - Astronomia e Astrofisica, 0103 physical sciences, QB Astronomy, observational [Methods], data analysis [Methods], 010303 astronomy & astrophysics, Stratosphere, physical evolution [Planets and satellites], QC, ComputingMilieux_MISCELLANEOUS, 0105 earth and related environmental sciences, QB, Physics, Earth and Planetary Astrophysics (astro-ph.EP), [PHYS]Physics [physics], photometric [Techniques], Center (category theory), Astronomy and Astrophysics, Radius, Pluto, Temperature gradient, QC Physics, 13. Climate action, Space and Planetary Science, terrestrial planets [Planets and satellites], atmospheres [Planets and satellites], [PHYS.ASTR]Physics [physics]/Astrophysics [astro-ph], Astrophysics - Earth and Planetary Astrophysics
Abstract

We analyze two multi-chord stellar occultations by Pluto observed on July 18th, 2012 and May 4th, 2013, and monitored respectively from five and six sites. They provide a total of fifteen light-curves, twelve of them being used for a simultaneous fit that uses a unique temperature profile, assuming a clear (no-haze) and pure N_2 atmosphere, but allowing for a possible pressure variation between the two dates. We find a solution that fits satisfactorily (i.e. within the noise level) all the twelve light-curves, providing atmospheric constraints between ~1,190 km (pressure ~ 11 \mubar) and ~ 1,450 km (pressure ~0.1 \mubar) from Pluto's center. Our main results are: (1) the best-fitting temperature profile shows a stratosphere with strong positive gradient between 1,190 km (at 36 K, 11 \mubar) and r = 1,215 km (6.0 \mubar), where a temperature maximum of 110 K is reached; above it is a mesosphere with negative thermal gradient of -0.2 K/km up to ~ 1,390 km (0.25 \mubar), where, the mesosphere connects itself to a more isothermal upper branch around 81 K; (2) the pressure shows a small (6 %) but significant increase (6-\sigma level) between the two dates; (3) without troposphere, Pluto's radius is found to be R_P = 1,190 +/- 5km. Allowing for a troposphere, R_P is constrained to lie between 1,168 and 1,195 km; (4) the currently measured CO abundance is too small to explain the mesospheric negative thermal gradient. Cooling by HCN is possible, but only if this species is largely saturated; Alternative explanations like zonal winds or vertical compositional variations of the atmosphere are unable to explain the observed mesospheric trend., Comment: 41 pages, 13 figures, 4 tables

Published
2015

255. Wideband Ge-Rich SiGe Polarization-Insensitive Waveguides for Mid-Infrared Free-Space Communications

Author

Xavier Le Roux, Carlos Alonso-Ramos, Winnie N. Ye, Giovanni Isella, Laurent Vivien, Qiankun Liu, Jacopo Frigerio, Joan Manel Ramirez, Vladyslav Vakarin, Pavel Cheben, Andrea Ballabio, Delphine Marris-Morini, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Politecn Milan, LNESS Dipartimento Fis, I-22100 Como, Italy, Politecnico di Milano [Milan] (POLIMI), and National Research Council of Canada (NRC)

Subjects
Polarization-insensitive, 02 engineering and technology, Communications system, lcsh:Technology, 7. Clean energy, 01 natural sciences, law.invention, lcsh:Chemistry, Engineering (all), Mid-infrared, Photonic integrated circuits, Materials Science (all), Instrumentation, Process Chemistry and Technology, Computer Science Applications1707 Computer Vision and Pattern Recognition, Fluid Flow and Transfer Processes, law, General Materials Science, Wideband, Rayleigh scattering, lcsh:QH301-705.5, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Photonic integrated circuit, General Engineering, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Computer Science Applications, Wavelength, symbols, Optoelectronics, Astrophysics::Earth and Planetary Astrophysics, 0210 nano-technology, Materials science, Astrophysics::Cosmology and Extragalactic Astrophysics, 010309 optics, symbols.namesake, 0103 physical sciences, Astrophysics::Galaxy Astrophysics, Birefringence, lcsh:T, business.industry, Laser, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Photonics, lcsh:Engineering (General). Civil engineering (General), business, lcsh:Physics
Abstract

The recent development of quantum cascade lasers, with room-temperature emission in the mid-infrared range, opened new opportunities for the implementation of ultra-wideband communication systems. Specifically, the mid-infrared atmospheric transparency windows, comprising wavelengths between 3&ndash, 5 &micro, m and 8&ndash, 14 &micro, m, have great potential for free-space communications, as they provide a wide unregulated spectrum with low Mie and Rayleigh scattering and reduced background noise. Despite the great efforts devoted to the development of mid-infrared sources and detectors, little attention is dedicated to the management of polarization for signal processing. In this work, we used Ge-rich SiGe alloys to build a wideband and polarization-insensitive mid-infrared photonic platform. We showed that the gradual index change in the SiGe alloys enabled the design of waveguides with remarkably low birefringence, below 2 &times, 10&minus, 4, over ultra-wide wavelength ranges within both atmospheric transparency windows, near wavelengths of 3.5 &micro, m and 9 &micro, m. We also report on the design of a polarization-independent multimode interference device achieving efficient power splitting in an unprecedented 4.5-&micro, m bandwidth at around 10-&micro, m wavelength. The ultra-wideband polarization-insensitive building blocks presented here pave the way for the development of high-performance on-chip photonic circuits for next-generation mid-infrared free-space communication systems.

Published
2018

256. Ultrafast terahertz detectors based on three-dimensional meta-atoms

Author

Alexander Giles Davies, Gangyi Xu, Paul Crozat, Hanond Nong, S. Pirotta, Sukhdeep Dhillon, Stéphane Guilet, Raffaele Colombelli, Bruno Paulillo, Edmund H. Linfield, Lianhe Li, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Pierre Aigrain (LPA), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), School of Electronic and Electrical Engineering, University of Leeds (University of Leeds), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), and University of Leeds

Subjects
Infrared, Electromagnetic spectrum, Terahertz radiation, FOS: Physical sciences, Physics::Optics, Photodetector, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, 7. Clean energy, OCIS codes: (2300250) Optoelectronics, Resonator, 0103 physical sciences, (3207080) Ultrafast devices, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Physics, (0402235) Far infrared or terahertz, business.industry, Loop antenna, Detector, Physics - Applied Physics, (1603918) Metamaterials, 021001 nanoscience & nanotechnology, (0400040) Detectors, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Optoelectronics, 0210 nano-technology, business, Ultrashort pulse
Abstract

International audience; Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this relatively unexplored region of the electromagnetic spectrum. In particular, semiconductor-based ultrafast THz receivers are required for compact, ultrafast spectroscopy and communication systems, and to date, quantum-well infrared photodetectors (QWIPs) have proved to be an excellent technology to address this, given their intrinsic picosecond-range response. However, with research focused on diffraction-limited QWIP structures (λ∕2), RC constants cannot be reduced indefinitely, and detection speeds are bound to eventually meet an upper limit. The key to an ultra-fast response with no intrinsic upper limit even at tens of gigahertz (GHz) is an aggressive reduction in device size, below the diffraction limit. Here we demonstrate sub-wavelength (λ∕10) THz QWIP detectors based on a 3D split-ring geometry, yielding ultra-fast operation at a wavelength of around 100 μm. Each sensing meta-atom pixel features a suspended loop antenna that feeds THz radiation in the ∼20 μm 3 active volume (V eff ∼3 × 10 −4 λ∕2 3). Arrays of detectors as well as single-pixel detectors have been implemented with this new architecture, with the latter exhibiting ultra-low dark currents below the nA level. This extremely small resonator architecture leads to measured optical response speeds-on arrays of 300 devices-of up to ∼3 GHz and an expected device operation of up to tens of GHz, based on the measured S parameters on single devices and arrays.

Published
2017

257. Non-equilibrium edge-channel spectroscopy in the integer quantum Hall regime

Author

Carles Altimiras, Dominique Mailly, H. Le Sueur, Ulf Gennser, Antonella Cavanna, F. Pierre, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N)

Subjects
FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, Quantum Hall effect, Edge (geometry), 01 natural sciences, Gapless playback, Quantum spin Hall effect, Quantum mechanics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Spectroscopy, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], [PHYS]Physics [physics], Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 3. Good health, Flow (mathematics), 0210 nano-technology, Energy (signal processing), Integer (computer science)
Abstract

Heat transport has large potentialities to unveil new physics in mesoscopic systems. A striking illustration is the integer quantum Hall regime, where the robustness of Hall currents limits information accessible from charge transport. Consequently, the gapless edge excitations are incompletely understood. The effective edge states theory describes them as prototypal one-dimensional chiral fermions - a simple picture that explains a large body of observations and calls for quantum information experiments with quantum point contacts in the role of beam splitters. However, it is in ostensible disagreement with the prevailing theoretical framework that predicts, in most situations, additional gapless edge modes. Here, we present a setup which gives access to the energy distribution, and consequently to the energy current, in an edge channel brought out-of-equilibrium. This provides a stringent test of whether the additional states capture part of the injected energy. Our results show it is not the case and thereby demonstrate regarding energy transport, the quantum optics analogy of quantum point contacts and beam splitters. Beyond the quantum Hall regime, this novel spectroscopy technique opens a new window for heat transport and out-of-equilibrium experiments., Comment: 13 pages including supplementary information, Nature Physics in print

Published
2009

258. Accelerating polariton relaxation in a two beam experiment

Author

Pascale Senellart, Régis André, Le Si Dang, B. Sermage, Jacqueline Bloch, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), CNET, France Télécom, Laboratoire de Spectrométrie Physique (LSP), and Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Physics, education.field_of_study, Condensed matter physics, Scattering, Exciton, Relaxation (NMR), Population, 01 natural sciences, Brillouin zone, 0103 physical sciences, Polariton, Atomic physics, education, ComputingMilieux_MISCELLANEOUS, Excitation, Beam (structure)
Abstract

We have performed a two-beam experiment on a II–VI microcavity in the strong coupling regime. A pulsed non-resonant excitation creates a transient population of excitons of large in-plane wave-vector and a very weak polariton population at k‖ = 0, center of the Brillouin zone. A cw laser beam resonantly injects polaritons at the inflexion point of the lower polariton branch and efficiently populates the k‖ = 0 via polariton-polariton scattering. In the presence of the two laser beams, we observe a strong increase of the transient emission at k‖ = 0 associated to a drastic modification of the emission dynamics. The signal gain can reach 200. We show that the key parameter controlling the gain is the cw polariton population at k‖ = 0, which stimulates the polariton relaxation from large k states toward k‖ = 0. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2005

259. Silicene spintronics: Fe(111)/silicene system for efficient spin injection

Author

Xiaoyang Lin, Jiaqi Zhou, Weisheng Zhao, Arnaud Bournel, Yue Zhang, Yin Wang, Fert Beijing Institute, Beihang University (BUAA), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Department of Physics and Center for Theoretical and Computational Physics, The University of Hong Kong (HKU), and Fert Beijing Institute and School of Electronic and Information Engineering

Subjects
Electron mobility, Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Spectral line, law.invention, symbols.namesake, Ab initio quantum chemistry methods, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Spintronics, Condensed matter physics, Silicene, Fermi level, Transistor, 021001 nanoscience & nanotechnology, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology
Abstract

Silicene is an emerging 2D material with advantages of high carrier mobility, compatibility with the silicon-based semiconductor industry, and the tunable gap by a vertical electrical field due to the buckling structure. In this work, we report a first-principles investigation on the spin injection system, which consists of a Fe(111)/silicene stack as the spin injector and pure silicene as the spin channel. An extremely high spin injection efficiency (SIE) close to 100% is achieved. The partial density of states of Fe layers in the Fe(111)/silicene stack shows that spin-down states dominate above the Fermi level, resulting in a negligible spin-up current and high SIE. The transmission spectra have been investigated to analyze the spin-resolved properties. The spin injection system based on silicene is promising for the efficient silicon-based spintronics devices such as switching transistors.

Published
2017

260. A review of selected topics in physics based modeling for tunnel field-effect transistors

Author

Tommaso Rollo, Pierpaolo Palestri, Marco G. Pala, Cem Alper, David Esseni, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Università degli Studi di Udine - University of Udine [Italie]

Subjects
02 engineering and technology, Integrated circuit, 01 natural sciences, Modelling, Schrödinger equation, law.invention, Electronic switch, symbols.namesake, law, Quantum mechanics, 0103 physical sciences, energy efficient switches, Materials Chemistry, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, semi-classical transport, Electrical and Electronic Engineering, Quantum, ComputingMilieux_MISCELLANEOUS, quantum transport, Quantum tunnelling, 010302 applied physics, Physics, modeling and simulations, van-der-Waals transistors, Tunnel FETs, Modelling, energy efficient switches, tunnel FETs, modeling and simulations, quantum transport, semi-classical transport, van-der-Waals transistors, Transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Tunnel FETs, symbols, 0210 nano-technology, Hamiltonian (quantum mechanics), Efficient energy use
Abstract

The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrodinger equation problems. We will then address models that solve the open-boundary Schrodinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

Published
2017

261. Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

Author

Philippe Coquet, Umar Saleem, Noelle Gogneau, Hong Wang, Muhammad Danang Birowosuto, Maria Tchernycheva, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), CNRS International NTU THALES Research Alliance (UMI CINTRA), THALES-Nanyang Technological University [Singapour]-Centre National de la Recherche Scientifique (CNRS), and University of South Carolina [Columbia]

Subjects
010302 applied physics, Photoluminescence, Materials science, business.industry, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, Luminescence, business, Single crystal, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy, Wurtzite crystal structure
Abstract

The low pressure chemical vapor deposition (LPCVD) method is used to synthesize GaN nanowires. It is an alternative technique to the more conventional molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE). Nanowires grown by LPCVD are shown to have a single-crystal Wurtzite structure and present a strong luminescence at a near-band-gap energy. A sub-band-gap defect-related luminescence is also observed in the visible range. Identified as yellow (YL) and green (GL) luminescences, these emissions are very similar to the one reported from bulk and thin 2D GaN film samples and may be attributed to comparable defects. In this work, using photoluminescence (PL) spectroscopy with an above-band-gap excitation and a time-resolved PL with a below-band-gap excitation, we investigate whether these luminescences originate from bulk and/or surface defects. We demonstrate that the YL defect-related band can be significantly suppressed by 88% after passivating the surface of nanowires with aluminum oxide. This suppression is in favor of the localized surface defects responsible for the yellow luminescence, while the green luminescence band originates from deeper bulk defects.

Published
2017

262. Nanocontact based spin torque oscillators with two free layers

Author

Thibaut Devolder, W. Van Roy, Sébastien Petit-Watelot, J-V Kim, Mauricio Manfrini, R. Soucaille, L. Lagae, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), and Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Similarity (geometry), Acoustics and Ultrasonics, Field (physics), Condensed matter physics, Dynamics (mechanics), Spin valve, Spin torque oscillators, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Vortex, Extinction (optical mineralogy), [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

We study a spin torque oscillator based on magnetic vortices hosted by a pseudo spin valve, and generated and confined by a nanocontact configuration. In addition to the standard functioning modes of such spin torque oscillators, we present evidence for field and current conditions leading to a novel extinction regime, where the oscillator response is transiently quenched. We model the dynamics analytically for two non-interacting vortices, one in each magnetic layer. The similarity of their trajectories makes them prone to interact. We argue that they can synchronize and then follow identical orbits, which leads to the extinction of the RF voltage emission.

Published
2017

263. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Author

José Alvarez, Daniel Bouchier, Dominique Mangelinck, Marion Descoins, Géraldine Hallais, Laetitia Vincent, Charles Renard, James P. Connolly, Timothée Molière, Alexandre Jaffré, Denis Mencaraglia, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Université Pierre et Marie Curie - Paris 6 (UPMC), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), ANR-11-PRGE-0009,MULTISOLSI,Cellules solaires multispectrales sur silicium cristallin(2011), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay

Subjects
III-V semiconductors, Materials science, Silicon, GaAs on Si, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Chemical beam epitaxy, chemistry.chemical_compound, symbols.namesake, Photovoltaics, 0103 physical sciences, Doping, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Trimethylgallium, Photoluminescence, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], 010302 applied physics, Dopant, business.industry, 021001 nanoscience & nanotechnology, Semiconductor, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, Optoelectronics, 0210 nano-technology, Raman spectroscopy, business
Abstract

International audience; The monolithic integration of III-V semiconductors on silicon and particularly of GaAs has aroused great interest since the 1980s. Potential applications are legion, ranging from photovoltaics to high mobility channel transistors. By using a novel integration method, we have shown that it is possible to achieve heteroepitaxial integration of GaAs crystals (typical size 1 lm) on silicon without any structural defect such as antiphase domains, dislocations, or stress, usually reported for direct GaAs heteroepitaxy on silicon. However, concerning their electronic properties, conventional free carrier characterization methods are impractical due to the micrometric size of GaAs crystals. In order to evaluate the GaAs material quality for optoelectronic applications, a series of indirect analyses such as atom probe tomography, Raman spectroscopy, and micro-photoluminescence as a function of temperature were performed. These revealed a high content of partially electrically active carbon originating from the trimethylgallium used as the Ga precursor. Nevertheless, the very good homogeneity observed by this doping mechanism and the attractive properties of carbon as a dopant once controlled to a sufficient degree are a promising route to device doping.

Published
2017

264. Highly Crystalline Urchin-like ordered arrays of Ultra-thin Zinc Oxide Nanowires : Towards Solar Cell fabrication

Author

Gokarna, Anisha, Parize, Romain, Kadiri, Hind, Nomenyo, Komla, Patriarche, Gilles, Miska, Patrice, Selopal, G., Milan, R., Concina, I., Vomiero, Alberto, Lerondel, Gilles, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Luleå University of Technology (LUT), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and VU VAN, Jean-Baptiste

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

265. Quantum Limit of Heat Flow Across a Single Electronic Channel

Author

Ulf Gennser, A. Anthore, Antonella Cavanna, Sébastien Jezouin, Yong Jin, F. Pierre, François Parmentier, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, Thermal conductance quantum, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Amplitude damping channel, Quantum, Condensed Matter - Statistical Mechanics, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], [PHYS]Physics [physics], Quantum Physics, Multidisciplinary, Condensed matter physics, Statistical Mechanics (cond-mat.stat-mech), Condensed Matter - Mesoscale and Nanoscale Physics, Chemistry, Quantum limit, Conductance, 021001 nanoscience & nanotechnology, Universality (dynamical systems), Conductance quantum, 0210 nano-technology, Quantum Physics (quant-ph), Fermi Gamma-ray Space Telescope
Abstract

Quantum physics predicts that there is a fundamental maximum heat conductance across a single transport channel, and that this thermal conductance quantum $G_Q$ is universal, independent of the type of particles carrying the heat. Such universality, combined with the relationship between heat and information, signals a general limit on information transfer. We report on the quantitative measurement of the quantum limited heat flow for Fermi particles across a single electronic channel, using noise thermometry. The demonstrated agreement with the predicted $G_Q$ establishes experimentally this basic building block of quantum thermal transport. The achieved accuracy of below 10\% opens access to many experiments involving the quantum manipulation of heat., manuscript (5 pages, 3 figures) and supplementary materials (8 pages, 9 figures, 1 table)

Published
2013

266. Top-down and bottom-up growth of patterned multi-functional ZnO

Author

Parize, Romain, Rumyantseva, Anna, Kadiri, Hind, Gwiazda, Agnieszka, Nomenyo, Komla, Patriarche, Gilles, Gokarna, Anisha, Lerondel, Gilles, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2013

267. Chargeless Heat Transport in the Fractional Quantum Hall Regime

Author

Carles Altimiras, Antonella Cavanna, Ulf Gennser, A. Anthore, Dominique Mailly, F. Pierre, H. Le Sueur, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N)

Subjects
[PHYS]Physics [physics], Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Filling factor, FOS: Physical sciences, General Physics and Astronomy, Coulomb blockade, 02 engineering and technology, Quantum Hall effect, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, 7. Clean energy, Quantum dot, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Quasiparticle, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Current (fluid), 010306 general physics, 0210 nano-technology, Quantum, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract

We demonstrate a direct approach to investigate heat transport in the fractional quantum Hall regime. At filling factor of 4/3, we inject power at quantum point contacts and detect the related heating from the activated current through a quantum dot. The experiment reveals a chargeless heat transport from a significant heating that occurs upstream of the power injection point, in the absence of a concomitant electrical current. By tuning in-situ the edge path, we show that the chargeless heat transport does not follow the reverse direction of the electrical current path along the edge. This unexpected heat conduction demonstrates a novel aspect, yet to be elucidated, of the physics in fractional quantum Hall systems., Manuscript (5 pages, 3 figures) and supplementary material (8 pages, 9 figures); v2 includes additional supplementary material and references; to be published in Phys. Rev. Lett

Published
2012

268. Quantum coherence engineering in the integer quantum Hall regime

Author

Giancarlo Faini, Werner Wegscheider, Ulf Gennser, Patrice Roche, H. Le Sueur, P. A. Huynh, Dominique Mailly, F. Pierre, Fabien Portier, Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Solid State Physics Laboratory, Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), Anjou Recherche, Veolia Environnement Recherche et Innovation, Chemin de la Digue, BP 76, 78603 Maisons-Laffitte Cedex, and affiliation inconnue

Subjects
Coherence time, General Physics and Astronomy, FOS: Physical sciences, 02 engineering and technology, Quantum phases, Degree of coherence, Quantum Hall effect, 01 natural sciences, Quantum spin Hall effect, Quantum error correction, Quantum mechanics, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Physics, [PHYS]Physics [physics], Quantum Physics, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, 021001 nanoscience & nanotechnology, Coherence length, 0210 nano-technology, Quantum Physics (quant-ph), Coherence (physics)
Abstract

We present an experiment where the quantum coherence in the edge states of the integer quantum Hall regime is tuned with a decoupling gate. The coherence length is determined by measuring the visibility of quantum interferences in a Mach-Zehnder interferometer as a function of temperature, in the quantum Hall regime at filling factor two. The temperature dependence of the coherence length can be varied by a factor of two. The strengthening of the phase coherence at finite temperature is shown to arise from a reduction of the coupling between co-propagating edge states. This opens the way for a strong improvement of the phase coherence of Quantum Hall systems. The decoupling gate also allows us to investigate how inter-edge state coupling influence the quantum interferences' dependence on the injection bias. We find that the finite bias visibility can be decomposed into two contributions: a Gaussian envelop which is surprisingly insensitive to the coupling, and a beating component which, on the contrary, is strongly affected by the coupling., Comment: 4 pages, 5 figures

Published
2012
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269. Strong back-action of a linear circuit on a single electronic quantum channel

Author

Ulf Gennser, A. Anthore, Antonella Cavanna, Sébastien Jezouin, Dominique Mailly, François Parmentier, F. Pierre, H. Le Sueur, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Quantum point contact, FOS: Physical sciences, General Physics and Astronomy, Hardware_PERFORMANCEANDRELIABILITY, Quantum channel, 01 natural sciences, 010305 fluids & plasmas, Quantum mechanics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Amplitude damping channel, Quantum, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], [PHYS]Physics [physics], Physics, Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Quantum wire, Conductance, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Conductance quantum, Quantum Physics (quant-ph), Hardware_LOGICDESIGN, Linear circuit
Abstract

What are the quantum laws of electricity in mesoscopic circuits? This very fundamental question has also direct implications for the quantum engineering of nanoelectronic devices. Indeed, when a quantum coherent conductor is inserted into a circuit, its transport properties are modified. In particular, its conductance is reduced because of the circuit back-action. This phenomenon, called environmental Coulomb blockade, results from the granularity of charge transfers across the coherent conductor. Although extensively studied for a tunnel junction in a linear circuit, it is only fully understood for arbitrary short coherent conductors in the limit of small circuit impedances and small conductance reduction. Here, we investigate experimentally the strong back-action regime, with a conductance reduction of up to 90%. This is achieved by embedding a single quantum channel of tunable transmission in an adjustable on-chip circuit of impedance comparable to the resistance quantum $R_K=h/e^2$ at microwave frequencies. The experiment reveals important deviations from calculations performed in the weak back-action framework, and matches with recent theoretical results. From these measurements, we propose a generalized expression for the conductance of an arbitrary quantum channel embedded in a linear circuit., 11 pages including supplementary information, to be published in Nature Physics

Published
2011
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270. Electro-osmotic propulsion of helical nanobelt swimmers

Author

Gilgueng Hwang, Remy Braive, Antonella Cavanna, Abdelkarim Ouerghi, Isabelle Robert-Philip, Alexios Beveratos, Sinan Haliyo, Isabelle Sagnes, Stephane Regnier, Haliyo, Sinan, Institut des Systèmes Intelligents et de Robotique (ISIR), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2011

271. Energy relaxation in the integer quantum Hall regime

Author

Ulf Gennser, Carles Altimiras, Antonella Cavanna, H. Le Sueur, Dominique Mailly, F. Pierre, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N)

Subjects
General Physics and Astronomy, FOS: Physical sciences, 02 engineering and technology, Quantum channel, Quantum Hall effect, 01 natural sciences, 7. Clean energy, symbols.namesake, Quantum spin Hall effect, Ballistic conduction, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Fermi–Dirac statistics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Amplitude damping channel, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Physics, [PHYS]Physics [physics], Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Filling factor, 021001 nanoscience & nanotechnology, Quasiparticle, symbols, 0210 nano-technology
Abstract

We investigate the energy exchanges along an electronic quantum channel realized in the integer quantum Hall regime at filling factor $\nu_L=2$. One of the two edge channels is driven out-of-equilibrium and the resulting electronic energy distribution is measured in the outer channel, after several propagation lengths $0.8~\mu$m$\leq L\leq30~\mu$m. Whereas there are no discernable energy transfers toward thermalized states, we find efficient energy redistribution between the two channels without particle exchanges. At long distances $L\geq10~\mu$m, the measured energy distribution is a hot Fermi function whose temperature is lower than expected for two interacting channels, which suggests the contribution of extra degrees of freedom. The observed short energy relaxation length challenges the usual description of quantum Hall excitations as quasiparticles localized in one edge channel., Comment: To be published in PRL, 10 pages including supplementary material

Published
2010

272. Experimental Test of the Dynamical Coulomb Blockade Theory for Short Coherent Conductors

Author

Dominique Mailly, F. Pierre, Antonella Cavanna, Ulf Gennser, Carles Altimiras, Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001))

Subjects
Fano factor, Quantum point contact, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, Plateau (mathematics), 01 natural sciences, Quantum mechanics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Quantum, Electrical conductor, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], [PHYS]Physics [physics], Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Shot noise, Coulomb blockade, Conductance, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 3. Good health, 0210 nano-technology
Abstract

We observed the recently predicted quantum suppression of dynamical Coulomb blockade on short coherent conductors by measuring the conductance of a quantum point contact embedded in a tunable on-chip circuit. Taking advantage of the circuit modularity we measured most parameters used by the theory. This allowed us to perform a reliable and quantitative experimental test of the theory. Dynamical Coulomb blockade corrections, probed up to the second conductance plateau of the quantum point contact, are found to be accurately normalized by the same Fano factor as quantum shot noise, in excellent agreement with the theoretical predictions., 4 pages, 4 figures, accepted for publication in Physical Review Letters

Published
2007

273. Monitoring the dynamics of a coherent cavity polariton population

Author

Pascale Senellart, B. Sermage, Régis André, Le Si Dang, Jacqueline Bloch, M. Perrin, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), CNET, France Télécom, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Spectrométrie Physique (LSP), and Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Condensed Matter::Quantum Gases, Physics, [PHYS]Physics [physics], education.field_of_study, Condensed matter physics, Condensed Matter::Other, Exciton, Population, Relaxation (NMR), Center (category theory), Physics::Optics, 02 engineering and technology, Rate equation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, 0103 physical sciences, Polariton, Stimulated emission, 010306 general physics, 0210 nano-technology, education, Excitation, ComputingMilieux_MISCELLANEOUS
Abstract

We report on time-resolved photoluminescence measurements on a II-VI $\mathrm{Cd}\mathrm{Te}∕\mathrm{Cd}\mathrm{Mn}\mathrm{Te}$ semiconductor microcavity in the strong-coupling regime. Under nonresonant excitation, we observe the buildup of a large population in the polariton states close to the Brillouin-zone center with occupation factors larger than 10. A spectacular spectral narrowing is measured, together with a strong acceleration of the polariton relaxation. A simple rate equation model describing the stimulated polariton-polariton scatterings toward the lowest-energy polariton states gives a good overall description of the measured dynamic.

Published
2005

274. Direct Observation of Dynamical Bifurcation between Two Driven Oscillation States of a Josephson Junction

Author

Michel Devoret, M. Metcalfe, F. Pierre, R. Vijay, Chad Rigetti, Irfan Siddiqi, Luigi Frunzio, Denis Vion, Daniel Esteve, Robert Schoelkopf, Christopher Wilson, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Yale Quantum Institute, Yale University [New Haven], Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche sur la Fusion par confinement Magnétique (IRFM), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Superconductivity, Josephson effect, Physics, [PHYS]Physics [physics], Condensed matter physics, Oscillation, Amplifier, Phase (waves), General Physics and Astronomy, Plasma oscillation, 01 natural sciences, 010305 fluids & plasmas, Pi Josephson junction, Nonlinear system, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract

We performed a novel phase-sensitive microwave reflection experiment which directly probes the dynamics of the Josephson plasma resonance in both the linear and the nonlinear regime. When the junction was driven below the plasma frequency into the nonlinear regime, we observed for the first time the transition between two different dynamical states predicted for nonlinear systems. In our experiment, this transition appears as an abrupt change in the reflected signal phase at a critical excitation power. This controlled dynamical switching can form the basis of a sensitive amplifier, in particular, for the readout of superconducting qubits.

Published
2005

275. RF-Driven Josephson Bifurcation Amplifier for Quantum Measurement

Author

R. Vijay, Christopher Wilson, Irfan Siddiqi, F. Pierre, Michel Devoret, Chad Rigetti, M. Metcalfe, Luigi Frunzio, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Yale Quantum Institute, and Yale University [New Haven]

Subjects
Josephson effect, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Superconductivity (cond-mat.supr-con), Pi Josephson junction, Quantum amplifier, Bifurcation theory, Condensed Matter::Superconductivity, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Superconductivity, Physics, [PHYS]Physics [physics], Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Oscillation, Amplifier, Condensed Matter - Superconductivity, Dissipation, 021001 nanoscience & nanotechnology, Optoelectronics, 0210 nano-technology, business
Abstract

We have constructed a new type of amplifier whose primary purpose is the readout of superconducting quantum bits. It is based on the transition of an RF-driven Josephson junction between two distinct oscillation states near a dynamical bifurcation point. The main advantages of this new amplifier are speed, high-sensitivity, low back-action, and the absence of on-chip dissipation. Pulsed microwave reflection measurements on nanofabricated Al junctions show that actual devices attain the performance predicted by theory., 5 Figures

Published
2004

276. Revealing the Band Structure of FAPI Quantum Dot Film and Its Interfaces with Electron and Hole Transport Layer Using Time Resolved Photoemission

Author

Bertille Martinez, Dylan Amelot, Sang-Soo Chee, Abdelkarim Ouerghi, Mayank Goyal, Francesco Andrea Bresciani, Hervé Cruguel, Charlie Gréboval, Nadine Witkowski, Angshuman Nag, Xiang Zhen Xu, Emmanuel Lhuillier, Nicolas Casaretto, Mathieu G. Silly, Junling Qu, Audrey Chu, Clément Livache, Prachi Rastogi, Christophe Méthivier, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Indian Institute of Science Education and Research Pune (IISER Pune), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique et d'Etude des Matériaux (LPEM), ESPCI ParisTech-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Réactivité de Surface (LRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), ANR-11-IDEX-0004-02/10-LABX-0067,MATISSE,MATerials, InterfaceS, Surfaces, Environment(2011), ANR: copin, ANR: frontal, ANR: graskop,graskop, European Project: 756225,blackQD, Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-11-IDEX-0004,SUPER,Sorbonne Universités à Paris pour l'Enseignement et la Recherche(2011), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), and ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019)

Subjects
Materials science, Field (physics), business.industry, Halide, 02 engineering and technology, Electron, [CHIM.MATE]Chemical Sciences/Material chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, General Energy, Nanocrystal, Quantum dot, Optoelectronics, Physical and Theoretical Chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Electronic band structure, business, Perovskite (structure), Diode
Abstract

International audience; Lead halide perovskite nanocrystals have attracted attention in the field of nanocrystal-based light-emitting diode and solar cells, because their devices showed high performances in only a few years. Among them, CsPbI3 is a promising candidate for solar cell design in spite of a too wide band gap and severe structural stability issue. Its hybrid organic–inorganic counterpart (NH2)2CHPbI3 (FAPI), where the Cs is replaced with formamidinium (FA), presents a smaller band gap and also an improved structural stability. Here, we have investigated the energy landscape of pristine FAPI, and the interface of FAPI with electron and hole selective layers using transport, photoemission, and noncontact surface photovoltage by means of time-resolved photoemission. We have found from transport and photoemission that its Fermi level is deeply positioned in the band gap, enabling the material to be almost intrinsic. Time-resolved photoemission has revealed that the interface of pristine FAPI is bended toward downward side, which is consistent with a p-type nature for the interface (i.e., hole as majority carrier). Using TiOx and MoOx contacts, as a model for the electron and hole transport layer, respectively, allows the electron transfer from the TiOx to the FAPI and from the FAPI to the MoOx. The latter is revealed by time-resolved photoemission showing inverted band bending for the two interfaces. From these results, we clearly present the energy landscape of FAPI and its interfaces with TiOx and MoOx in the dark and under illumination. These insights are of utmost interest for the future design of FAPI-based solar cell.

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277. A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Author

Demetrio Logoteta, Jean Choukroun, Marco G. Pala, Philippe Dollfus, Giuseppe Iannaccone, University of Pisa - Università di Pisa, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)

Subjects
010302 applied physics, Physics, Nanostructure, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Transistor, FOS: Physical sciences, Thermionic emission, 01 natural sciences, 7. Clean energy, Electronic, Optical and Magnetic Materials, law.invention, Nanoribbon, MoS2, MOSFET, steep-slope, law, Logic gate, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, MOSFET, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high ION/IOFF ratios, compatible with electronic applications, albeit biased at ultralow voltages of around 0.1 V., 4 pages, 5 figures

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278. Advanced and reliable GaAs/AlGaAs ICP-DRIE etching for optoelectronic, microelectronic and microsystem applications

Author

Raffaele Colombelli, Etienne Herth, Pierre-Baptiste Vigneron, N. Isac, F. Joint, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique (LERMA (UMR_8112)), Sorbonne Université (SU)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), and Institut d'électronique fondamentale (IEF)

Subjects
Materials science, Fabrication, 02 engineering and technology, Photoresist, 7. Clean energy, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, Microelectronics, Deep reactive-ion etching, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Plasma etching, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optoelectronics, Dry etching, Inductively coupled plasma, 0210 nano-technology, business
Abstract

We investigate the parameter optimization for micron-scale etching by Inductive Coupled Plasma - Deep Reactive Ion Etching (ICP-DRIE) of GaAs/AlGaAs semiconductor heterostructures. Although dry etching approaches have been reported in the literature using a broad variety of plasma etch tools, there is still need to meet the majority of microsystems dry etching requirements. The etch process family studied here, is dominated by the relative pressures of BCl3 (Boron trichloride) and Cl2 (Chlorine) gases. The influence of using a BCl3/Cl2/Ar/N2 mixture at different pressures has been investigated: A small addition of N2 (Nitrogen) is very effective inducing sidewall protection when using photoresist masks. The etch profile quality has been characterized as a function of the plasma process and of the etched feature sizes. The desired etch characteristics for GaAs/AlGaAs heterostructures can be achieved by controlling the various process parameters with good reliability, high selectivity, and – simultaneously – high etch rates and sidewall verticality. Etch rates from 1 to over 5.5 μm/min have been obtained. The selectivity with optical photoresist varies from 2.3 to 16. The presented results can be valuable for a wide range of applications involving fabrication of micro-electro-mechanical-systems or Micro Optoelectronic Mechanical Systems.

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279. Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

Author

J. Przybytek, Ulf Gennser, Abdelkarim Ouerghi, Marta Gryglas-Borysiewicz, S. Lewinska, Michał Baj, Benoit Jouault, Institute of Experimental Physics [Warsaw] (IFD), Faculty of Physics [Warsaw] (FUW), University of Warsaw (UW)-University of Warsaw (UW), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Silicon, Condensed matter physics, General Physics and Astronomy, chemistry.chemical_element, Gaas alas, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Symmetry (physics), Condensed Matter::Materials Science, chemistry, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Quantum tunnelling, Quantum well
Abstract

39th Conference on the Physics of Semiconductors, Jaszowied Int Sch, Krynica-Zdroj, POLAND, JUN 19-24, 2010; Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon delta-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

280. High-performance waveguide photodetectors based on lateral Si/Ge/Si heterojunction

Author

Delphine Marris-Morini, Xavier Le Roux, Farah Amar, Laurent Vivien, Bayram Karakus, Eric Cassan, Frederic Boeuf, Charles Baudot, Bertrand Szelag, Christophe Kopp, Jean-Marc Fedeli, Daniel Benedikovic, Guy Aubin, Carlos Alonso-Ramos, P. Crozat, Léopold Virot, Jean-Michel Hartmann, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
Materials science, Fabrication, Silicon, Optical communication, Photodetector, Silicon on insulator, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, Responsivity, 020210 optoelectronics & photonics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business.industry, responsivity, dark current, semiconductormicro-electronics, Photodiode, silicon-on-insulator, germanium, chemistry, group-IV nanophotonics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, photodetectors, Optoelectronics, high-speed optical communications, business
Abstract

International audience; On-chip light detection is universally regarded as a key functionality that enables myriad of applications, including optical communications, sensing, health monitoring or object recognition, to name a few. Silicon is widely used in the microelectronics industry. However, its electronics bandgap precludes the fabrication of high-performance photodetectors that operate at wavelengths longer that 1.1 µm, a spectral range harnessed by optical communication windows of low fiber attenuation and dispersion. Conversely, Germanium, a group-IV semiconductor as Silicon, with a cutoff wavelength of ~1.8 µm, yields efficient light detection at near-infrared wavelengths. Germanium-based photodetectors are mature building blocks in the library of silicon nanophotonic devices, with a low dark-current, a fast response, a high responsivity and low power consumption with an established fabrication flow. In this work, we report on the design, fabrication and operation of waveguide pin photodetectors that advantageously exploit lateral Silicon/Germanium/Silicon heterojunctions. Devices were fabricated on 200 mm silicon-on-insulator substrates using standard microelectronics production tools and processes. This photodetector architecture takes advantage of the compatibility with contact process steps of silicon modulators, thereby offering substantially reduced fabrication complexity for transmitters and receivers, while providing improved optical characteristics. More specifically, at a low-bias reverse voltage of-1 V, we experimentally achieved dark-currents lower that 10 nA, a device photo-responsivity up to 1.1 A/W, and large 3-dB opto-electrical bandwidths over 50 GHz. In addition, high-speed data rate transmission measurements via eye diagram inspection have been conducted, with pin photodetector operation at the conventional 10 Gbps up to the future 40 Gbps link speeds.

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281. Parametric instability in coupled nonlinear microcavities

Author

S. R. K. Rodriguez, Alberto Amo, N. Carlon Zambon, Jacqueline Bloch, Aristide Lemaître, L. Le Gratiet, I. Sagnes, Sylvain Ravets, A. Harouri, P. St-Jean, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), FOM Institute for Atomic and Molecular Physics (AMOLF), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Centre National de la Recherche Scientifique (CNRS)-Université de Lille, Université de Lille-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and ANR-16-CE30-0021,QFL,Fluides Quantiques de Lumière(2016)

Subjects
[PHYS]Physics [physics], Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Field (physics), Sideband, FOS: Physical sciences, Semiclassical physics, Physics::Optics, Laser, 01 natural sciences, 010305 fluids & plasmas, law.invention, Nonlinear system, law, Quantum electrodynamics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Optical parametric oscillator, 010306 general physics, Realization (systems), ComputingMilieux_MISCELLANEOUS, Excitation, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Optics (physics.optics), Physics - Optics
Abstract

We report the observation of a parametric instability in the out-of-equilibrium steady state of two coupled Kerr microresonators coherently driven by a laser. Using a resonant excitation, we drive the system into an unstable regime, where we observe the appearance of intense and well resolved sideband modes in the emission spectrum. This feature is a characteristic signature of self-sustained oscillations of the intracavity field. We comprehensively model our findings using semiclassical Langevin equations for the cavity field dynamics combined with a linear stability analysis. The inherent scalability of our semiconductor platform, enriched with a strong Kerr nonlinearity, is promising for the realization of integrated optical parametric oscillator networks operating in a few-photon regime., 6 pages, 3 figures

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282. Immunity of intersubband polaritons to inhomogeneous broadening

Author

Iacopo Carusotto, Giorgio Biasiol, Ngoc-Linh Tran, Raffaele Colombelli, Jean-Michel Manceau, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratorio TASC (IOM CNR), Consiglio Nazionale delle Ricerche (CNR), INO-CNR BEC, and Università degli Studi di Trento (UNITN)

Subjects
FOS: Physical sciences, Physics::Optics, Intersubband polariton, 02 engineering and technology, 01 natural sciences, law.invention, Laser linewidth, law, 0103 physical sciences, Polariton, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Absorption (electromagnetic radiation), Plasmon, ComputingMilieux_MISCELLANEOUS, Physics, Coupling, Condensed matter physics, Condensed Matter::Other, business.industry, 021001 nanoscience & nanotechnology, Laser, Condensed Matter - Other Condensed Matter, Photonics, 0210 nano-technology, business, Other Condensed Matter (cond-mat.other)
Abstract

We demonstrate that intersubband (ISB) polaritons are robust to inhomogeneous effects originating from the presence of multiple quantum wells (MQWs). In a series of samples that exhibit mid-infrared ISB absorption transitions with broadenings varying by a factor of 5 (from 4 meV to 20meV), we have observed polariton linewidths always lying in the 4 - 7 meV range only. We have experimentally verified the dominantly inhomogeneous origin of the broadening of the ISB transition, and that the linewidth reduction effect of the polariton modes persists up to room-temperature. This immunity to inhomogeneous broadening is a direct consequence of the coupling of the large number of ISB oscillators to a single photonic mode. It is a precious tool to gauge the natural linewidth of the ISB plasmon , that is otherwise masked in such MQWs system , and is also beneficial in view of perspective applications such as intersubband polariton lasers.

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283. Design and integration of an O-band silicon nitride AWG for CWDM applications

Author

Delphine Marris-Morini, Laurent Vivien, Nathalie Vulliet, Diego Perez-Galacho, Sylvain Guerber, Carlos Alonso-Ramos, Sebastien Cremer, Xavier Le Roux, Charles Baudot, Frederic Boeuf, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
Coarse Wavelength Division Multiplexing, Materials science, 02 engineering and technology, 01 natural sciences, Flattening, law.invention, Crosstalk, chemistry.chemical_compound, Arrayed Waveguide Grating, 020210 optoelectronics & photonics, law, Wavelength-division multiplexing, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, 010302 applied physics, business.industry, Silicon Nitride, Polarization (waves), Arrayed waveguide grating, Photonics, Silicon nitride, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business
Abstract

International audience; Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported. Specificity of low order array has been explored through multiple devices among which insertion loss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral response flattening is obtained.

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284. Polariton parametric amplification in semiconductor microcavities

Author

V. Thierry-Mieg, Régis André, Benoit Deveaud, Cristiano Ciuti, Jacqueline Bloch, A. Mura, Jl Staehli, Michele Saba, Giovanni Bongiovanni, S. Kundermann, Le Si Dang, Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratoire d'Optoélectronique Quantique, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire de Spectrométrie Physique (LSP), and Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Photon, DEVICES, QUANTUM-WELLS, NONLINEAR EMISSION, Physics::Optics, 02 engineering and technology, 01 natural sciences, COHERENT, Parametric process, Quantum mechanics, 0103 physical sciences, Polariton, SCATTERING, 010306 general physics, Quantum well, ComputingMilieux_MISCELLANEOUS, Physics, Optical amplifier, [PHYS]Physics [physics], Condensed Matter::Quantum Gases, Condensed matter physics, business.industry, Condensed Matter::Other, STRONG-COUPLING REGIME, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, EXCITON-EXCITON SCATTERING, LUMINESCENCE, STIMULATED, PHOTOLUMINESCENCE, Matter wave, Photonics, GAIN, 0210 nano-technology, business, Coherence (physics)
Abstract

Modifying the photonic environment of a semiconductor quantum well by embedding it in a high-reflectivity microcavity gives rise to new fundamental optical excitations, half-quantum well excitons, half-photons. These particles, called polaritons, have a light mass, as cavity photons, meaning that they have a large De Broglie wavelength. On the other hand, polaritons, like excitons, are subject to Coulomb interaction, a feature generating strong optical nonlinearities. Such properties favour quantum degeneracy and collective phenomena related to the bosonic statistics of polaritons. We review experiments on stimulated scattering of polaritons. In particular we concentrate on the resonant excitation of polaritons somewhere on the dispersion curve and the stimulation of their scattering into the fundamental state by means of an optical probe beam. The process is called polariton parametric amplification and results in very large and ultrafast optical amplification of the probe beam. The model, based on a Hamiltonian of interacting bosons, suggests that the amplification is related to the coherence between polaritons. We demonstrate that in clearly designed samples, this coherence can be preserved almost up to room temperature, so that intersting applications of this phenomenon can be conceived. At the same time we have been able to improve dramatically the efficiency of the parametric process, making the microcavity an unprecedented optical amplifier.

285. Spectroscopy of a single Si donor by the resonant tunnelling experiment

Author

Ulf Gennser, M. Gryglas, Michał Baj, D. K. Maude, Antonella Cavanna, Benoit Jouault, Giancarlo Faini, Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Institute of Experimental Physics [Warsaw] (IFD), Faculty of Physics [Warsaw] (FUW), University of Warsaw (UW)-University of Warsaw (UW), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Condensed matter physics, Phonon, General Physics and Astronomy, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, X-VALLEYS, STATES, Impurity, Excited state, Condensed Matter::Superconductivity, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Atomic physics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Spectroscopy, Fermi gas, Quantum tunnelling, Common emitter
Abstract

Resonant tunnelling via single impurities placed in AlAs layer in GaAs/AlAs/GaAs heterostructure was experimentally investigated. The experiments were performed on submicrometer mesas, at very low mK temperature. For very small mesas, the number of impurities within the junction is small enough to see the contribution of single impurities in the tunnelling current. The investigations on the tunnelling via 0-dimensional states [1], as well as our previous results [2], show that the resonant tunnelling in such systems is a powerful tool to study the properties of the electron gas, i.e. it allows to perform the spectroscopy of electron density of states. In this paper, we show that by means of resonant tunnelling via 0-dimensional states, it is possible to investigate not only the electron gas in the emitter, but also the properties of the resonant level itself. In the current-voltage characteristics of one of the mesas studied, two groups of peaks are clearly resolved. The first group, at about –0.8V reflects the resonant tunnelling from the disordered emitter via a single impurity [2]. The other structure, at about –1.2V comes most probably from the tunnelling via an excited state of the same impurity. Also other structures possibly related to the tunnelling via ground and excited states of other impurities are resolved. All these issues will be discussed in detail, taking into account the possible phonon participation.

286. Emergence of criticality through a cascade of delocalization transitions in quasiperiodic chains

Author

Goblot, V. (V.), Štrkalj, A. (A.), Pernet, N. (N.), Lado, J.L. (J. L.), Dorow, C. (C.), Lemaitre, A. (A.), Gratiet, L.L. (L. Le), Harouri, A. (A.), Sagnes, I. (I.), Ravets, S. (S.), Amo, A. (A.), Bloch, J. (J.), Zilberberg, O. (O.), Centre de Nanosciences et Nanotechnologies [C2N (UMR_9001)], Institute for Theoretical Physics [ETH Zürich] [ITP], and Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]

287. Parametric instability in coupled nonlinear microcavities

Author

Zambon, N.C. (N. Carlon), Rodriguez, S.R.K. (S. R. K.), Lemaitre, A. (A.), Harouri, A. (A.), Gratiet, L.L. (L. Le), Sagnes, I. (I.), St-Jean, P. (P.), Ravets, S. (S.), Amo, A. (A.), Bloch, J. (J.), Centre de Nanosciences et Nanotechnologies [C2N (UMR_9001)], FOM Institute for Atomic and Molecular Physics [AMOLF], and Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]

288. MIS STRUCTURES FOR SOLAR CELLS PERIMETER PASSIVATION

Author

Amaury Delamarre, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Jean-François Guillemoles, Guillemoles, Jean-François, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Tokyo NextPV, Research Center for Advanced Science and Technology [Tokyo] (RCAST), The University of Tokyo (UTokyo), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social]

Subjects
Passivation, [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], Gallium Arsenide Based cells, [SPI.NRJ]Engineering Sciences [physics]/Electric power, III-V Semiconductors, Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices, 7. Clean energy, Concentrator Cells, III-V and Related Compound Semiconductor Based Devices, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

36th European Photovoltaic Solar Energy Conference and Exhibition; 615-617, Perimeter recombination takes place in all photovoltaic architectures, its detrimental effect increasing with the perimeter to area ratio. A new efficient passivation method is introduced here, inspired by the working principle of MOSFETs. It consists in a Metal Insulator stack, deposited on top of the Semiconductor structure. As a transistor, it acts as a switch to prevent the flow of majority carriers towards the defective side walls. Simulation results show that the detrimental effect of perimeter recombination can be reduced by half in the particular case of a GaAs solar cell under one sun illumination. Because no chemical treatment is involved, our MIS based passivation solution can be adapted to various photovoltaic materials as a perspective. A possible additional application will be devices working under intense illumination, where resistive effects are a limiting factor.

289. Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls

Author

Gilles Patriarche, Philippe Caroff, J.P. Nys, Tao Xu, Adrian Díaz Álvarez, Bruno Grandidier, Philipp Ebert, Nathali Alexandra Franchina Vergel, Nemanja Peric, Jean-Christophe Harmand, Maxime Berthe, Sebastien Plissard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Peter Grünberg Institute, Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association, University of Shanghai [Shanghai], Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), AcknowledgmentsThis work was financially supported by the European Community’s Seventh Framework Program (Grant No. PITN-GA-2012-316751, Nanoembrace project), the H2020 program(Grant No. PITN-GA-2016-722176, Indeed Project), theFrench state funds managed by the ANR within theFigure 7. STM image of the {110} sidewall of a In-catalyzed InAsNWs after the removal of the As capping layer at 315 °C–325 °C.Tunneling conditions: V sample = +2.5 V, I tunneling = 10 pA.Figure 8. Sequence of temperature-dependent STEM images of anAu-catalyzed GaAs NW capped with a thin As cap. The annealingtemperature is indicated in the images. 7Nanotechnology 30 (2019) 324002 A Díaz Álvarez et alInvestissements d’Avenir programme (Grant No. ANR-11-EQPX-0015, EQUIPEX Excelsior, Grant No. ANR-10-EQPX-0050), EQUIPEX Tempos), the French National ResearchAgency (ANR-16-CE24-0007-01, Dirac III-V project) and theRENATECH network and the Deutsche For-schungsgemeinschaft (Grant No. 390247238). T Xuacknowledges the supports of the National Natural ScienceFoundation of China (Grant No. 61775130). The authors thankC Coinon and X Wallart for the growth of the As capped bulksamples and C Domke, M Heinrich, M Simon, and C Dzeja forparticipating in some of the measurements leading to figure 4, RENATECH network, ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010), and ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016)

Subjects
Materials science, Annealing (metallurgy), Nucleation, Nanowire, Bioengineering, 02 engineering and technology, Surface finish, 010402 general chemistry, 01 natural sciences, law.invention, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], law, Vacancy defect, Scanning transmission electron microscopy, [CHIM.CRIS]Chemical Sciences/Cristallography, surface morphology, General Materials Science, Electrical and Electronic Engineering, roughness, {110} sidewall, Condensed matter physics, business.industry, point defect, Mechanical Engineering, III-V semiconductor nanowires, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], scanning tunneling microscopy, Scanning tunneling microscope, 0210 nano-technology, business
Abstract

International audience; The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a function of the NW composition and the nature of the seed particles are intimately related to the formation and reaction of surface point defects. Langmuir evaporation close to the congruent evaporation temperature causes the formation of vacancies which nucleate and form vacancy islands on {110} sidewalls of self-catalyzed InAs NWs. However, for annealing temperatures much smaller than the congruent temperature, a new phenomenon occurs: group III vacancies form and are filled by excess As atoms, leading to surface As Ga antisites. The resulting Ga adatoms nucleate with excess As atoms at the NW edges, producing monoatomic-step islands on the {110} sidewalls of GaAs NWs. Finally, when gold atoms diffuse from the seed particle onto the {110} sidewalls during evaporation of the protective As cap, Langmuir evaporation does not take place, leaving the sidewalls of InAsSb NWs atomically flat.

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290. Quantum well infrared photo-detectors operating in the strong light-matter coupling regime

Author

Pierre-Baptiste Vigneron, S. Pirotta, Jean-Michel Manceau, Iacopo Carusotto, Ngoc-Linh Tran, Raffaele Colombelli, Adel Bousseksou, Giorgio Biasiol, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), CNR Istituto di Fotonica e Nanotecnologie [Trento] (IFN), Consiglio Nazionale delle Ricerche [Roma] (CNR), Laboratorio Nazionale TASC, and CNR-INFM

Subjects
010302 applied physics, Physics, Condensed Matter::Quantum Gases, Physics and Astronomy (miscellaneous), Infrared, Condensed Matter::Other, Detector, Photodetector, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, Transfer function, Coupling (physics), semiconductors, electromagnetism, photodetectors, Quantum mechanics, 0103 physical sciences, Polaritonics, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

We report quantum well mid-infrared photo-detectors operating in the strong light-matter coupling regime. We claim that this is an ideal system to elucidate the elusive problem in intersubband polaritonics of the injection of electrons (single-particle fermionic states) into polaritonic modes (bosonic excitations). By reversing the perspective and focusing on the electron extraction, we have obtained experimental information on the transfer function between a polaritonic system and an electronic reservoir. In addition to its interest for fundamental science, this approach also opens promising avenues in view of adding previously unavailable functionalities to quantum well detectors and improving their performance.

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291. Ge-rich graded SiGe waveguides and interferometers from 5 to 11 µm wavelength range

Author

Xavier Le Roux, Vladyslav Vakarin, Andrea Barzaghi, Laurent Vivien, Qiankun Liu, Andrea Ballabio, Miguel Montesinos-Ballester, Giovanni Isella, Jacopo Frigerio, Carlos Alonso-Ramos, Delphine Marris-Morini, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Politecnico di Milano [Milan] (POLIMI)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Doping, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, 010309 optics, Secondary ion mass spectrometry, Wavelength, Optics, 0103 physical sciences, Spectral width, Photonics, Free carrier absorption, 0210 nano-technology, Absorption (electromagnetic radiation), business
Abstract

International audience; The mid-infrared (mid-IR) wavelength range hosts unique vibrational and rotational resonances of a broad variety of substances that can be used to unambiguously detect the molecular composition in a non-intrusive way. Mid-IR photonic-integrated circuits (PICs) are thus expected to have a major impact in many applications. Still, new challenges are posed by the large spectral width required to simultaneously identify many substances using the same photonic circuit. Ge-rich graded SiGe waveguides have been proposed as a broadband platform approach for mid-IR PICs. In this work, ultra-broadband waveguides are experimentally demonstrated within unprecedented wavelength range, efficiently guiding light from 5 to 11 µm. Interestingly, losses from 0.5 to 1.2 dB/cm are obtained between 5.1 and 8 µm wavelength, and values below 3 dB/cm are measured from 9.5 to 11.2 µm wavelength. An increase of propagation losses is seen between 8 and 9.5 µm; however, values stay below 4.6 dB/cm in the entire wavelength range. A detailed analysis of propagation losses is reported, supported by secondary ion mass spectrometry measurement, and different contributions are analyzed: silicon substrate absorption, oxygen impurities, free carrier absorption by residual doping, sidewall roughness and multiphonon absorption. Finally, Mach-Zehnder interferometers are characterized, and wideband operation is experimentally obtained from 5.5 to 10.5 µm wavelength.

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292. Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Author

Michel Ramonda, Jean-Baptiste Rodriguez, Laurent Cerutti, M. Rio Calvo, Eric Tournié, Gilles Patriarche, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centrale de Technologie en Micro et Nanoélectronique CTM-­LMCP, Université de Montpellier (UM), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, business.industry, Relaxation (NMR), Nucleation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Inorganic Chemistry, Electron diffraction, 0103 physical sciences, Materials Chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Nanometre, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Layer (electronics), Vicinal, Molecular beam epitaxy
Abstract

International audience; We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-two-dimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dimensional growth within a few nanometers. Moreover, reflexion high-energy electron diffraction revealed a fast relaxation of GaAs on Si and of GaSb on GaAs. The GaSb layer quality was better than that of similar layers grown on Si through AlSb nucleation layers.

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293. Strong coupling of ionizing transitions

Author

Erika Cortese, Simone De Liberato, Iacopo Carusotto, Raffaele Colombelli, School of Physics and Astronomy [Southampton], University of Southampton, CNR Istituto di Fotonica e Nanotecnologie [Trento] (IFN), Consiglio Nazionale delle Ricerche [Roma] (CNR), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Photon, Exciton, FOS: Physical sciences, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Quantum well, Physics, Quantum Physics, Continuum (measurement), Condensed Matter - Mesoscale and Nanoscale Physics, Doping, Cavity quantum electrodynamics, Observable, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Scanning tunneling microscope, Atomic physics, 0210 nano-technology, Quantum Physics (quant-ph), Optics (physics.optics), Physics - Optics
Abstract

We demonstrate that a ionising transition can be strongly coupled to a photonic resonance. The strong coupling manifests itself with the appearance of a narrow optically active resonance below the ionisation threshold. Such a resonance is due to electrons transitioning into a novel bound state created by the collective coupling of the electron gas with the vacuum field of the photonic resonator. Applying our theory to the case of bound-to-continuum transitions in microcavity-embedded doped quantum wells, we show how those strong-coupling features can be exploited as a novel knob to tune both optical and electronic properties of semiconductor heterostructures., 10 pages, 7 figures

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294. Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe 2 over LaF 3 as Case Study

Author

Abdelkarim Ouerghi, Ulrich Nguétchuissi Noumbé, Emmanuel Lhuillier, Jean-Francois Dayen, Bernard Doudin, Charlie Gréboval, Clément Livache, Thibault Brulé, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), HORIBA Europe Research Center [Palaiseau] (Horiba), HORIBA Scientific [France], Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0067,MATISSE,MATerials, InterfaceS, Surfaces, Environment(2010), ANR-15-CE24-0016,H2DH,Hétérostructures bi-dimendionnelles hybrides pour l'optoélectronique(2015), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-18-CE30-0023,IPER-Nano2,Nanocristaux de perovskite inorganique pour la nanophotonique(2018), European Project: 756225,blackQD, lhuillier, emmanuel, MATerials, InterfaceS, Surfaces, Environment - - MATISSE2010 - ANR-10-LABX-0067 - LABX - VALID, Hétérostructures bi-dimendionnelles hybrides pour l'optoélectronique - - H2DH2015 - ANR-15-CE24-0016 - AAPG2015 - VALID, Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge - - COPIN2019 - ANR-19-CE24-0022 - AAPG2019 - VALID, Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides - - GRaSkop2019 - ANR-19-CE09-0026 - AAPG2019 - VALID, Nanocristaux Colloïdaux Dopés Infrarouges - - FRONTAL2019 - ANR-19-CE09-0017 - AAPG2019 - VALID, APPEL À PROJETS GÉNÉRIQUE 2018 - Nanocristaux de perovskite inorganique pour la nanophotonique - - IPER-Nano22018 - ANR-18-CE30-0023 - AAPG2018 - VALID, ERC blackQD - blackQD - 756225 - INCOMING, Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Ionic bonding, 02 engineering and technology, Electrolyte, Gating, 010402 general chemistry, 01 natural sciences, Capacitance, Ion, law.invention, two dimensional material, Biomaterials, field effect transistor), law, Electrochemistry, photodetector, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], business.industry, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Photodiode, phototransistor, ionic glass, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat]
Abstract

International audience; Modulating the carrier density of 2D materials is pivotal to tailor their electrical properties, with novel physical phenomena expected to occur at a higher doping level. Here, the use of ionic glass as a high capacitance gate is explored to develop a 2D material–based phototransistor operated with a higher carrier concentration up to 5 × 1013 cm−2, using MoSe2 over LaF3 as an archetypal system. Ion glass gating reveals to be a powerful technique combining the high carrier density of electrolyte gating methods while enabling direct optical addressability impeded with usual electrolyte technology. The phototransistor demonstrates ION/IOFF ratio exceeding five decades and photoresponse times down to 200 µs, up to two decades faster than MoSe2 phototransistors reported so far. Careful phototransport analysis reveals that ionic glass gating of 2D materials allows tuning the nature of the carrier recombination processes, while annihilating the traps' contribution in the electron injection regime. This remarkable property results in a photoresponse that can be modulated electrostatically by more than two orders of magnitude, while at the same time increasing the gain bandwidth product. This study demonstrates the potential of ionic glass gating to explore novel photoconduction processes and alternative architectures of devices.

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295. Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes

Author

Nan Guan, François H. Julien, Junkang Wang, Martin Foldyna, Subrata Das, Maria Tchernycheva, Nuño Amador-Mendez, Christophe Durand, Akanksha Kapoor, Noelle Gogneau, Sudipta Som, Joël Eymery, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), National Institute for Interdisciplinary Science and Technology (CSIR), National Institute for Interdisciplinary Science and Technology [India], Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), National Taiwan University [Taiwan] (NTU), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, business.industry, Nanowire, Phosphor, Gallium nitride, 02 engineering and technology, Nitride, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, White light, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We demonstrate flexible nanowire white light-emitting-diodes (LEDs) with an optimized colour quality. The devices consist of flexible InGaN/GaN nanowire LEDs acting as pumps, capped with removable phosphor-doped polydimethylsiloxane membranes. Five different phosphors with tens of microns in grain size emitting from green to orange are investigated using both violet-blue and a blue-green nanowire-based LED pumps. In addition, a flexible nanowire white LED with a warm white emission is demonstrated using two layers of different phosphors. Compared to the previous realizations of flexible nanowire white LEDs, these novel LEDs improve the colour rendering index from 54 to 86 and show a colour tuneable from a bluish cool white colour to natural white and finally to warm white. The flexibility tests show that the LEDs can be bent down to 1.5 cm curvature radius without significant degradation. Therefore, the replacement of the nano-phosphors used in the previous realization by relatively inexpensive micro-phosphors does not degrade the good mechanical flexibility of the white nanowire LEDs.

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