691 results on '"Brandt, Oliver"'
Search Results
252. Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy
253. Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
254. Excitation polarization anisotropy of the spontaneous emission from anM-plane GaN film: Competition between hole relaxation and exciton recombination
255. Auger recombination as the dominant nonradiative recombination channel in InN
256. Das elektronische Pollentagebuch
257. Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
258. Polarity-Induced Selective Area Epitaxy of GaN Nanowires.
259. (Al,Ga)O x Microwire Ensembles on Si Exhibiting Luminescence over the Entire Visible Wavelength Range.
260. Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity
261. Growth of wurtzite InN on bulk In2O3(111) wafers
262. Direct experimental determination of the spontaneous polarization of GaN
263. Effects of Ga on the growth of InN on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy
264. Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
265. A Comparative Proteomic Study of Human Skin Suction Blister Fluid from Healthy Individuals Using Immunodepletion and iTRAQ Labeling
266. Raman scattering by wave-vector-dependent coupled plasmon/LO-phonon modes inn-type InN
267. Structural properties of InN films grown on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy
268. Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy
269. Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
270. Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy
271. Epitaxial Interfaces between Crystallographically Mismatched Materials
272. GaN/Fe core/shell nanowires for nonvolatile spintronics on Si
273. GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy
274. Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications
275. Nitride nanowire structures for LED applications
276. “Cube-on-hexagon” orientation relationship for Fe onGaN(0001¯): The missing link in bcc/hcp epitaxy
277. Collector Phase Transitions during Vapor−Solid−Solid Nucleation of GaN Nanowires
278. Unpinning the Fermi level of GaN nanowires by ultraviolet radiation
279. Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
280. Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes
281. Advances in Group-III-Nitride Photodetectors
282. Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
283. Thermal stability of epitaxial Fe films on GaN(0001)
284. X-ray diffraction of epitaxial films with arbitrarily correlated dislocations: Monte Carlo calculation and experiment
285. HLA-DR+ leukocytes acquire CD1 antigens in embryonic and fetal human skin and contain functional antigen-presenting cells
286. (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on6H-SiC(0001)
287. Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1–xN/GaNAxial Nanowire Heterostructures.
288. Electronic properties of axial In $$_x$$ Ga $$_{1-x}$$ N insertions in GaN nanowires.
289. Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles.
290. Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations.
291. The benefit of disorder
292. Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
293. Gianotti-Crosti syndrome
294. Halo dermatitis followed by the development of vitiligo associated with Sutton's nevi
295. Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
296. Polarization filtering by nonpolar M-plane GaN films on LiAlO2
297. Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001)
298. Ga adsorption and desorption kinetics onM-plane GaN
299. Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy
300. Erratum: Nonpolar InxGa1-xN/GaN(11¯00) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306(R) (2003)]
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