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A simple approach is developed to identify the layer number of 2D MoS₂ sheets. By using an optical imaging method combined with image analysis software, a high-contrast image of the MoS₂ sheets can be extracted from the red (R) channel of the color optical microscopy image. The value of the intensity difference in the grayscale image of the R channel between MoS₂ sheets (1-3 layers) and the SiO₂ substrate can be used to identify the layer number of the sheet.

First-step nucleation growth has an important impact on the two-step growth of high-quality mid-infrared emissive InAs/InGaAs/InP quantum dots (QDs). It has been found that an optimized growth rate for first-step nucleation is critical for forming QDs with narrow size distribution, high dot density and high crystal quality. High growth temperature has an advantage in removing defects in the QDs formed, but the dot density will be reduced. Contrasting behavior in forming InAs QDs using metal-organic vapor phase epitaxy (MOVPE) by varying the input flux ratio of group-V versus group-III source (V/III ratio) in the first-step nucleation growth has been observed and investigated. High-density, 2.5 × 10(10) cm(-2), InAs QDs emitting at2.15 µm have been formed with narrow size distribution, ∼1 nm standard deviation, by reducing the V/III ratio to zero in first-step nucleation growth.

We report the first study of argon (Ar)-plasma-enhanced intermixing of InAs/InGaAs/InP self-assembled quantum dots (QDs) in an inductively coupled plasma reactive ion etch system. The Ar-plasma exposure creates point defects, which propagate into the QD structure and enhance the intermixing between the QDs and their barrier layers, hence tuning the energy bandgap of the QDs. By optimizing the plasma exposure time and the annealing temperature, we observe (i) a blueshift of 160 nm and an increase in the photoluminescence (PL) intensity of the QD samples immediately after Ar-plasma exposure for 90 s, and (ii) a further increase in the blueshift of 330 nm, accompanied by 2.5-times increase in the PL intensity and 37 nm narrowing in the PL linewidth after subsequent rapid thermal annealing at 720 °C. The ability to generate a large blueshift without degrading the material quality shows that Ar-plasma exposure is an efficient post-growth technique for tuning the energy bandgap of QD structures.

CuInSe2 (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)3 with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm–2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)2 in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ~ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer–Emmett–Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m2 g − 1, which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m2 g − 1) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices. Accepted version

The chemical reaction between Ag nanoparticles (Ag NPs) and 7,7',8,8'- tetracycanoquinodimethane (TCNQ) microparticles (MPs) in aqueous solution for the formation of Ag-NP-decorated Ag-TCNQ nanowires is reported. Based on the results obtained by UV-vis spectroscopy and scanning electron microscopy (SEM), it is proposed that the reaction between Ag NPs and TCNQ MPs includes three stages, namely, aggregation of NPs and MPs, diffusion and reaction between NPs and MPs, and formation of Ag-TCNQ nanowires. The as-synthesized semiconducting Ag-TCNQ nanowires show good performance in nonvolatile memory devices with multiple write-read-erase-read (WRER) cycles in air.

Reduced graphene oxide (rGO) electrodes can be applied for the electrochemical deposition of various semiconductor oxides. In this study, we demonstrate the electrochemical deposition of Cl-doped n-type Cu2O (Cl–Cu2O) on rGO electrodes. The structure and properties of the deposited Cl–Cu2O have been investigated extensively. Moreover, the effect of Cl doping on the carrier concentration and photocurrent of Cl–Cu2O has also been investigated. Our study shows significant implications in tailoring the properties of materials deposited on rGO electrodes by using electrochemical methods. Accepted version

Coronene nanowires were prepared through the reprecipitation method. The as-prepared one-dimensional (1D) nanostructures were characterized by UV-vis, fluorescence spectra, X-ray diffraction (XRD), optical microscopy, field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). We found that coronene nanowires in aqueous solution emitted strong green light instead of blue light for coronene molecules in THF solution. Moreover, the thin film of coronene nanowires on rGO/SiO2/Si electrode produced a strong photocurrent response upon irradiation. In addition, a heterojunction light emitting diode (LED) device with the structure of quartz/ITO/p-coronene nanowires/n-SiC/Ti (10 nm)/Au (120 nm) has been fabricated. The strong electroluminescence (EL) emission centered at 430 nm was detected with a forward bias at 20 V. Our result showed that the use of organic nanowires as the p-type hole injection layer could produce diodes with performance better than those with only inorganic thin-film structures. Accepted version

In this study, we use solution-processable crystalline TiO(2) nanoparticles as a buffer layer between the active layer and aluminum cathode to fabricate the P3HT:PCBM-based bulk heterojunction (BHJ) organic photovoltaic (OPV) devices. The employment of the presynthesized TiO(2) nanoparticles simplifies the fabrication of OPV devices because of the elimination of an additional hydrolysis step of precursors in air. The fabricated OPV devices with the thermally stable TiO(2) buffer layer are subjected to the further postdeposition thermal annealing, resulting in a power conversion efficiency (PCE) as high as 3.94%. The improved device performance could be attributed to the electron transporting and hole blocking capabilities due to the introduced TiO(2) buffer layer.

Owing to their unique thickness-dependent electronic properties, together with perfect flexibility and transparency, graphene and its relatives make fantastic material for use in both active channel and electrodes in various electronic devices. On the other hand, the electronic sensors based on graphene show high potential in detection of both chemical and biological species with high sensitivity. In this contribution, we report the fabrication of all-reduced graphene oxide (rGO) thin film transistors by a combination of solution-processed rGO electrodes with a micropatterned rGO channel, and then study their applications in biosensing. Our all-rGO devices are cost-effective, highly reproducible, and reliable. The fabricated electronic sensor is perfectly flexible with high transparency, showing good sensitivity in detecting proteins in the physiological buffer. As a proof of concept, fibronectin as low as 0.5 nM was successfully detected, which is comparable with the previously reported protein sensors based on single-layer pristine graphene obtained from mechanical cleavage. The specific detection of avidin by using biotinylated all-rGO sensor is also successfully demonstrated.

The nucleation mechanism of electrochemical deposition of Cu on reduced graphene oxide (rGO) electrodes has been systematically studied on the basis of the cyclic voltammetry, Tafel plot, and chronoamperometry. Our results show that the experimental parameters including electrolyte concentration, deposition potential, solution pH, and the presence of background electrolyte can determine the nucleation mechanism. Scanning electron microscopy is employed to study the nucleation and growth of Cu on rGO electrodes. This study is significant in development of the electrochemical method in practical applications based on the rGO electrodes.

We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6×10 10 cm −2 at 4 monolayers InAs layer.

The chemically reduced graphene oxide (rGO) was transferred onto polyethylene terephthalate (PET) substrates and then used as transparent and conductive electrodes for flexible organic photovoltaic (OPV) devices. The performance of the OPV devices mainly depends on the charge transport efficiency through rGO electrodes when the optical transmittance of rGO is above 65%. However, if the transmittance of rGO is less than 65%, the performance of the OPV device is dominated by the light transmission efficiency, that is, the transparency of rGO films. After the tensile strain (∼2.9%) was applied on the fabricated OPV device, it can sustain a thousand cycles of bending. Our work demonstrates the highly flexible property of rGO films, which provide the potential applications in flexible optoelectronics.

Being free from the harsh post-growth treatments in strong acids, long time sonication, etc., directly grown single-walled carbon nanotubes (SWCNTs) preserve their pristine structures and intrinsic properties, which make them ideal for highperformance electronic devices. [ 1–9 ] Integration of directly grown SWCNTs into such addressable devices is a crucial step and requirement for both fundamental studies and applications. Two strategies, i.e., fabrication of metal electrodes on CNTs [ 5 , 7 , 10 ] and direct growth of CNTs between the pre-fabricated electrodes, [ 3 , 4 , 11 ] are normally used to fabricate the directly grown CNT-based devices. Although the fi rst strategy is popular and commonly used, the shadow mask and/or the use of photoresist may contaminate or destroy CNTs, leading to a low performance or even failure of devices. [ 3 ] The second strategy possesses some advantages, such as no CNT purifi cation and no photolithography required. This could be a better choice to produce clean and high-performance CNT-based devices, since the pristine structures and intrinsic properties of the grown CNTs are preserved. Despite the fact that many attempts have been reported, [ 3 , 4 , 9 , 11 ]

A facile route for the generation of the dual patterns of metal oxide nanomaterials, for example, ZnO and CuO, has been developed by printing the oxide seeds through a combination of microcontact printing (microCP) and microfluidic (microF) techniques, followed by the simultaneous growth of the two metal oxide nanomaterials in a one-step solution reaction based on hydrothermal, seed-mediated selective growth. The obtained dual patterns of ZnO nanorods and CuO nanoneedles show a sharp boundary between them, indicating well-defined dual-pattern generation. Also, the simultaneous growth of metal oxide nanomaterials is highly material-selective for the specific seeds prepatterned on substrates, resulting in the selective growth of ZnO nanorods and CuO nanoneedles on the ZnO and CuO seeds, respectively. Moreover, the generation of high-quality dual patterns has been similarly realized on a flexible poly(ethylene terephthalate) (PET) wafer. This study demonstrates the well-controlled hydrothermal growth of different metal oxide nanomaterials in the same reaction solution on the preprinted oxide seeds on the target substrates. It opens up an avenue to develop multifunctional devices of different metal oxides with the combination of microCP and microF techniques.

Flexible, transparent, and conductive electrodes are prepared by reduction of the graphene oxide (GO) films which were spin-coated on the polyethylene terephthalate (PET) substrates. On the reduced graphene oxide (rGO) films, ZnO nanorods, as well as p-type and n-type Cu2O films with good crystallinity have been electrochemically deposited and then characterized. Meanwhile, the effect of pH value of the deposition bath on the morphology, structure, and semiconducting property of the electrochemical deposited Cu2O has been studied. Our results provide a possible way to replace the indium tin oxide (ITO) and fluorine tin oxide (FTO) electrodes with rGO films in the electrochemical synthesis, and make it promising to synthesize semiconductor oxides on rGO films for future flexible photovoltaic applications.

Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 degrees C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance ( approximately 160-500 Omega sq(-1)) and higher conductivity (26 S cm(-1)) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large "effective reduction depth" in the GO films (1.46 microm) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write-once-read-many-times effect and a high ON/OFF current ratio of 10(6).

Recently, the field-effect transistors (FETs) with graphene as the conducting channels have been used as a promising chemical and biological sensors. However, the lack of low cost and reliable and large-scale preparation of graphene films limits their applications. In this contribution, we report the fabrication of centimeter-long, ultrathin (1-3 nm), and electrically continuous micropatterns of highly uniform parallel arrays of reduced graphene oxide (rGO) films on various substrates including the flexible polyethylene terephthalate (PET) films by using the micromolding in capillary method. Compared to other methods for the fabrication of graphene patterns, our method is fast, facile, and substrate independent. In addition, we demonstrate that the nanoelectronic FETs based on our rGO patterns are able to label-freely detect the hormonal catecholamine molecules and their dynamic secretion from living cells.

Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO(2) substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squares, triangles, and zigzags can be easily fabricated. By using the GO patterns as templates, the hybrid GO-Ag nanoparticle patterns were obtained. Our study provides a flexible, simple, convenient method for generating GO patterns on solid substrates, which could be useful for graphene material-based device applications.

Monocrystalline ZnO nanorods (NRs) with high donor concentration are electrochemically deposited on highly conductive reduced graphene oxide (rGO) films on quartz. The film thickness, optical transmittance, sheet resistance, and roughness of rGO films are systematically studied. The obtained ZnO NRs on rGO films are characterized by X-ray diffraction, transmission electron microscopy, photoluminescence, and Raman spectra. As a proof-of-concept application, the obtained ZnO NRs on rGO are used to fabricate inorganic-organic hybrid solar cells with layered structure of quartz/rGO/ZnO NR/poly(3-hexylthiophene)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (P3HT/PEDOT:PSS)/Au. The observed power conversion efficiency (PCE, eta), approximately 0.31%, is higher than that reported in previous solar cells by using graphene films as electrodes. These results clearly demonstrate that rGO films with a higher conductivity have a smaller work function and show a better performance in the fabricated solar cells.

The technique to pattern aminosilanes on hydroxyl-terminated substrates will open up extensive applications in many fields. There are some existing methods to pattern aminosilanes, in particular, (3-aminopropyl)triethoxysilane (APTES) on SiO(2) and glass substrates through indirect routes. However, few reports focus on the direct patterning of APTES by microcontact printing (microCP), due to the volatility of "inks" which consist of APTES and organic solvents. This report shows that high-quality APTES patterns on hydroxyl-terminated substrates can be directly obtained by microCP using an APTES aqueous solution as "ink". Gold nanoparticles (Au NPs) have been used to verify the presence and quality of APTES patterns on which they are selectively adsorbed. Thus-obtained Au NP patterns can serve as templates for the growth of ZnO nanostructures. Lectins are also successfully immobilized on the APTES patterns, with glutaraldehyde as linker. We believe that our method will serve as a general approach and find a wide range of applications in the fabrication of patterns and devices.

A miniature dosage meter for toxic gas is developed based on TaS2 nanosheets, which is capable of indicating the toxic dosage of trace level NO at room temperature. The TaS2 film-based chemiresistor shows an irreversible current response against the exposure of NO. The unique non-recovery characteristic makes the TaS2 film-based device an ideal indicator of total dosage of chronicle exposure.

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers. Published version

In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by LP-MOCVD. Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum have been investigated. The five band k(DOT)p formalism in the PL spectrum and frequency shift in Raman spectrum have been performed. The theoretical calculations coincide with our experiment results well. The density of InAs quantum dots at 4 ML InAs is the maximum (1.6X10 10 cm MIN2 ).

In this paper, we deposited high quality ZnO film by plasma-assisted Metal-organic Chemical Vapor Deposition (MOCVD). A dominant peak at 34.6 degree due to (002) ZnO was observed indicating strongly C-oriented. The full-width at half-maximum (FWHM) of the (-rocking curve was 0.56 degree showing relatively small mosaicity. Transmission spectrum showed that the bandgap of ZnO film was about 3.31 eV at room temperature. Photoluminescence (PL) measurement was performed at both room temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. The resistivity of ZnO film was increased after annealing under Oxygen while its optical quality decreased.

Graphene has attracted increasing attention due to its unique electrical, optical, optoelectronic, and mechanical properties, which have opened up huge numbers of opportunities for applications. An overview of the recent research on graphene and its derivatives is presented, with a particular focus on synthesis, properties, and applications in solar cells.

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

A facile, environmentally friendly, and economical synthetic route for production of large-amounts (gram scale) of two-dimensional (2D) layered SnS2 nanoplates is presented. The electrode fabricated from the SnS2 nanoplate exhibits excellent lithium-ion battery performance with highly reversible capacity, good cycling stability and excellent capacity retention after 30 cycles.

Hollow hierarchical spheres self-organized from the ultrathin nanosheets of α-Fe2O3 were prepared by a simple process. These ultrathin nanosheet subunits possess an average thickness of around 3.5 nm and show preferential exposure of (110) facets. Their Li ion storage and visible-light photocatalytic water oxidation performance are tested. Such hierarchical nanostructures show high Li storage properties with good cycling stability and excellent rate capabilities. The water oxidation catalytic activity is 70 μmol h−1 g−1 for O2 evolution under visible light irradiation and can be maintained for 15 hours. The structural features of these α-Fe2O3 nanocrystals are considered to be important to lead to the attractive properties in both Li storage and photocatalytic water oxidation, e.g. hollow interior, ultrathin thickness and largely exposed active facets.

Nanoelectrode ensembles (NEEs) have been fabricated by the electrodeposition of Au nanoparticles (AuNPs) on single-layer graphene oxide (GO) sheets coated on a glassy carbon electrode (GCE). The fabricated NEEs show a typical sigmoidal shaped voltammetric profile, arising from the low coverage density of AuNPs on GCE and large distance among them, which can be easily controlled by varying the electrodeposition time. As a proof of concept, after the probe HS-DNA is immobilized on the NEEs through the Au–S bonding, the target DNA is detected with the methylene blue intercalator. Our results show that the target DNA can be detected as low as 100 fM, i.e. 0.5 amol DNA in 5 μL solution.

A bifunctional Fe(3)O(4)-Pt/reduced graphene oxide (rGO) composite, i.e. Fe(3)O(4) nanoparticles (~4.8 nm in size) and Pt nanoparticles (~5 nm in size) loaded on a rGO surface, has been synthesized. It shows great catalytic performance for the reduction of methylene blue. Recycling of the composite can be achieved by simply applying an external magnetic field. In addition, the Fe(3)O(4)-Pt/rGO composite exhibits a higher catalytic activity and selectivity for aqueous-phase aerobic oxidation of benzyl alcohol than does the FeO(x)-Pt on carbon nanotubes (i.e. FeO(x)-Pt/CNT composite). Moreover, the approach for the synthesis of Fe(3)O(4)-Pt/rGO composite is simple, and can be widely employed to produce other rGO-based composites with special properties. Our work indicates that the rGO-based bifunctional composite has great potential for practical applications in various fields, such as catalytic reaction, electrochemical sensing, clean energy, etc.

Sb based alloy nanostructures have attracted much attention due to their many promising applications, e.g. as battery electrodes, thermoelectric materials and magnetic semiconductors. In many cases, these applications require controlled growth of Sb based alloys with desired sizes and shapes to achieve enhanced performance. Here, we report a flexible catalyst-free chemical vapor deposition (CVD) process to prepare Cu–Sb nanostructures with tunable shapes (e.g. nanowires and nanoparticles) by transporting Sb vapor to react with copper foils, which also serve as the substrate. By simply controlling the substrate temperature and distance, various Sb–Cu alloy nanostructures, e.g. Cu11Sb3 nanowires (NWs), Cu2Sb nanoparticles (NPs), or pure Sb nanoplates, were obtained. We also found that the growth of Cu11Sb3 NWs in such a catalyst-free CVD process was dependent on the substrate surface roughness. For example, smooth Cu foils could not lead to the growth of Cu11Sb3 nanowires while roughening these smooth Cu foils with rough sand papers could result in the growth of Cu11Sb3 nanowires. The effects of gas flow rate on the size and morphology of the Cu–Sb alloy nanostructures were also investigated. Such a flexible growth strategy could be of practical interest as the growth of some Sb based alloy nanostructures by CVD may not be easy due to the large difference between the condensation temperature of Sb and the other element, e.g. Cu or Co. Accepted version

We report a method for fabrication of an efficient surface enhanced Raman scattering (SERS) substrate by combination of metallic nanostructures and graphene, which shows dramatic Raman enhancement and efficient adsorption of aromatic molecules. As an example, the fabricated Ag or Au nanoparticle (NP)-decorated reduced graphene oxide (rGO) on Si substrate is used as an efficient SERS substrate to detect the adsorbed aromatic molecules with a low detection limit at nM level. Systematic studies on the effects of NP size and substrate morphology on Raman enhancement are presented. This method might be useful for the future application in detection of biomolecules, such as DNA and proteins. Accepted version

Organic nanowires of 9,10-dibromoanthracene (DBA) and 9,10-dicyanoanthracene (DCNA) were obtained by adding the THF solution of DBA/DCNA into water containing P123 surfactants. The as-prepared nanowires were characterized by UV-vis, fluorescence spectra, Field Emission Scanning Electron Microscopy (FESEM), and Transmission Electron Microscopy (TEM). We found that DBA and DCNA nanowires emitted green light rather than blue light for molecules in THF solution. The red-shift UV and fluorescent spectra of DBA and DCNA nanowires implied that these nanowires were formed through J-aggregation. The photoconducting study of DBA/DCNA nanowire-based network on rGO/SiO(2)/Si shows different photocurrent behaviors upon irradiation, which displayed that electron transfer from DCNA nanowire to rGO was stronger than that of DBA nanowires to rGO.

Self-assembled InAs quantum dots (QDs) grown on different InxGa1−xAs∕InP matrixes by metal-organic chemical vapor deposition with fast nucleation rate and atomic layer epitaxy in pure nitrogen ambient have been studied. It has been found that the InAs QD formation efficiency is enhanced when the dots are grown on the strained InxGa1−xAs∕InP matrix compared with the dots grown on an unstrained InxGa1−xAs∕InP matrix. By changing the indium composition x of the InxGa1−xAs barrier from 0.53 to 0.72, the 77K photoluminescence (PL) emission wavelength of the InAs QD structures is redshifted by 220–300nm. The transition energy of the InAs∕InGaAs∕InP QD structure has been calculated by using the eight-band k∙p theory with consideration of the strain effect from QD’s upper InxGa1−xAs barrier layer. The calculated E1-HH1 transition energies agree with the measured PL emission peaks quite well.

Spontaneous CuPt ordering is observed in AlxIn1−xP layers grown by metal-organic vapor-phase epitaxy in pure nitrogen ambient with tertiarybutylphosphine as phosphorus precursor. Changes of the degree of ordering of the AlxIn1−xP epilayer versus annealing temperature have been investigated by using photoluminescence and transmission electron diffraction. The degree of ordering of the AlxIn1−xP layers is reduced after annealing the sample at a temperature higher than the sample growth temperature. It becomes completely disordered when the annealing temperature reaches 900°C and above.