662 results on '"Zhuravlev, K. S."'
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202. Electro- and Photoluminescence of CdS Nanoparticles Deposited on Carbon Nanotubes
203. Blue photoluminescence from high-dose Si+- and Ge+-implanted silicon-dioxide layers
204. Photo-luminescence from SiO2 layers implanted with Si+ and annealed in a pulse regime
205. Annealing effects in light emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating
206. Visible and near-infrared luminescence from Si nanostructures formed by ion implantation and pulse annealing
207. Influence of electric field on the photoluminescence of silicon nanocrystals
208. Interaction of excitons with carriers accelerated by the electric field of a surface acoustic wave in type-II GaAs/AlAs superlattices
209. Room temperature 1.5 μm light-emitting silicon diode with embedded β-FeSi2 nanocrystallites
210. Spin relaxation of negatively charged excitons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment
211. Influence of shape of GaN/AlN quantum dots on luminescence decay law
212. Enhancement of the photoluminescence of silicon nanocrystals under the influence of electric field
213. Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment
214. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature
215. Impact exerted by fractal pattern of ionized shallow-level donor impurity distribution on specific resistance of active layer of structure of field-effect transistor
216. Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix
217. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots
218. The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures
219. Materials for photodetectors based on intersubband transitions in GaN/AlGaN quantum dots
220. Observation of the zero-magnetic-field exciton spin splitting in high quality bulk GaAs and AlGaAs
221. Microstructure of quantum dots ensembles by EXAFS spectroscopy
222. Reversal of spin polarization direction in excitonic photoluminescence of AlGaAs
223. Modeling the operation of field-effect transistors based on GaAs/AlGaAs heterostructures
224. Nonradiative recombination in GaN quantum dots formed in the AlN matrix
225. LINEARLY POLARIZED PHOTOLUMINESCENCE FROM GaN QUANTUM DOTS EMBEDDED IN AIN MATRIX
226. Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing
227. Atomic and energy structure of InAs/AlAs quantum dots
228. Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia
229. Photoluminescence of a single InAs/AlAs quantum dot
230. Luminescence and energy structure of ultrathin InAs/AlAs quantum wells
231. Optical properties of photodetectors based on wurtzite quantum dot arrays
232. Correlation between optical properties of MBE films of AlN and morphology of their surface
233. Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties
234. Negative spin polarization in AlGaAs photoluminescence
235. Deep levels and electron transport in AlGaN/GaN heterostructures
236. Structural and optical properties of Si/β-FeSi 2 /Si heterostructures fabricated by Fe ion implantation and Si MBE
237. High Power Pseudomorphic Hemts' with Doped Channel
238. New IR Photodetector Based on GaN QWs' or QDs' Located in Barrier of AlGaN/GaN Hemt Structure
239. Morphological, structural and luminescence properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE
240. Continuous order-disorder phase transition (2×2)→(1×1) on the (0001)AlN surface
241. Photoluminescence dynamics in GaAs along an optically induced Mott transition
242. Pauli blockade of the electron spin flip in bulk GaAs
243. Application of XAFS spectroscopy to studying the microstructure and electronic structure of quantum dots
244. Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices
245. Effect of electric field on recombination of self-trapped excitons in silicon nanocrystals
246. Effect of external electric field on photoluminescence of silicon nanocrystals
247. Effect of an electric field on photoluminescence kinetics of type II GaAs/AlAs superlattices
248. k-Dependence of the Electron Spin-Flip Time in GaAs
249. Surface polariton spectroscopy of AlN films grown by ammonia MBE on (0001) Al2O3 substrate.
250. Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.
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