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202. Spatial and Frequency Selective Plasmonic Metasurface for Long Wavelength Infrared Spectral Region

Author

Pan, Xiaohang, primary, Xu, Hao, additional, Gao, Yanqing, additional, Zhang, Yafeng, additional, Sun, Liaoxin, additional, Li, Dan, additional, Wen, Zhengji, additional, Li, Shimin, additional, Yu, Weiwei, additional, Huang, Zhiming, additional, Wang, Jianlu, additional, Zhang, Bo, additional, Sun, Yan, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, Chen, Xin, additional, Dagens, Béatrice, additional, Hao, Jiaming, additional, Shen, Yue, additional, Dai, Ning, additional, and Chu, Junhao, additional

Published
2018
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203. Ferroelectric PVDF films and graphene-based composites

Author

Bystrov, Vladimir, primary, Bdikin, Igor, additional, Silibin, Maxim, additional, Meng, Xiangjian, additional, Tian, Bobo, additional, Wang, Jianlu, additional, Karpysky, Dmitry, additional, Bystrova, Anna, additional, and Paramonova, Ekaterina, additional

Published
2018
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207. Optoelectronics: High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure (Small 9/2018)

Author

Chen, Yan, primary, Wang, Xudong, additional, Wu, Guangjian, additional, Wang, Zhen, additional, Fang, Hehai, additional, Lin, Tie, additional, Sun, Shuo, additional, Shen, Hong, additional, Hu, Weida, additional, Wang, Jianlu, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2018
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208. Graphene Dirac point tuned by ferroelectric polarization field

Author

Wang, Xudong, primary, Chen, Yan, additional, Wu, Guangjian, additional, Wang, Jianlu, additional, Tian, Bobo, additional, Sun, Shuo, additional, Shen, Hong, additional, Lin, Tie, additional, Hu, Weida, additional, Kang, Tingting, additional, Tang, Minghua, additional, Xiao, Yongguang, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2018
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209. The ambipolar evolution of a high-performance WSe2 transistor assisted by a ferroelectric polymer

Author

Li, Dan, primary, Wang, Xudong, additional, Chen, Yan, additional, Zhu, Sixin, additional, Gong, Fan, additional, Wu, Guangjian, additional, Meng, Caimin, additional, Liu, Lan, additional, Wang, Lin, additional, Lin, Tie, additional, Sun, Shuo, additional, Shen, Hong, additional, Wang, Xingjun, additional, Hu, Weida, additional, Wang, Jianlu, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2018
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211. A ferroelectric relaxor polymer-enhanced p-type WSe2transistor

Author

Yin, Chong, primary, Wang, Xudong, additional, Chen, Yan, additional, Li, Dan, additional, Lin, Tie, additional, Sun, Shuo, additional, Shen, Hong, additional, Du, Piyi, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, Chu, Junhao, additional, Wong, Hon Fai, additional, Leung, Chi Wah, additional, Wang, Zongrong, additional, and Wang, Jianlu, additional

Published
2018
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214. High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics

Author

Wang, Haoliang, primary, Chen, Yan, additional, Lim, Engliang, additional, Wang, Xudong, additional, Yuan, Sijian, additional, Zhang, Xin, additional, Lu, Haizhou, additional, Wang, Jiao, additional, Wu, Guangjian, additional, Lin, Tie, additional, Sun, Shuo, additional, Wang, Jianlu, additional, Zhan, Yiqiang, additional, Shen, Hong, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2018
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216. Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection

Author

Wang, Peng, Liu, Shanshan, Luo, Wenjin, Fang, Hehai, Gong, Fan, Guo, Nan, Chen, Zhi Gang, Zou, Jin, Huang, Yan, Zhou, Xiaohao, Wang, Jianlu, Chen, Xiaoshuang, Lu, Wei, Xiu, Faxian, Hu, Weida, Wang, Peng, Liu, Shanshan, Luo, Wenjin, Fang, Hehai, Gong, Fan, Guo, Nan, Chen, Zhi Gang, Zou, Jin, Huang, Yan, Zhou, Xiaohao, Wang, Jianlu, Chen, Xiaoshuang, Lu, Wei, Xiu, Faxian, and Hu, Weida

Abstract

Wafer-scale multilayer GaSe was directly deposited on n-type GaSb substrates with a layer-by-layer epitaxial growth mode, which formed a vertical heterostructure of a dual-band photodetector. Indium (In) as the electrodes was formed on the surface of GaSe and GaSb, as the anode and cathode. To better demonstrate the vertical stacking process of the heterojunction structure, ab initio simulations were performed for GaSe nanosheet grown on the GaSb substrate.

Published
2017

217. Response analysis of monopulse radar under retrodirective and non-retrodirective cross-eye jamming

Author

Zhang Yang, Cui Jianling, Wang Jianlu, and Dai Huanyao

Subjects
020301 aerospace & aeronautics, genetic structures, Computer science, Acoustics, Amplitude-Comparison Monopulse, Response analysis, fungi, Jamming, 02 engineering and technology, 010502 geochemistry & geophysics, Interference (wave propagation), 01 natural sciences, Signal, humanities, eye diseases, 0203 mechanical engineering, Monopulse radar, Distortion, Electronic engineering, sense organs, Beam (structure), 0105 earth and related environmental sciences
Abstract

With the development of the ECM technology, cross-eye jamming technique becomes more and more practical. In order to study ECCM method for this jamming, retrodirective cross-eye and non-retrodirective cross-eye were studied and analyzed. The mathematical model of monopulse radar's sum signal and difference signal under cross-eye jamming is established and simulated. The simulation results show that the retrodirective cross-eye jamming will not affect the response shape of sum beam, while non-retrodirective cross-eye will lead to zero in sum beam. Both retrodirective cross-eye and non-retrodirective cross-eye jamming will lead to distortion of received difference beam pattern of monopulse radar, resulting in abnormal monopulse ratio. The closer the distance between interference source and monopulse radar, the decoying ability of cross-eye jamming is stronger, and the angle range of abnormal monopulse ratio will be greater.

Published
2016

218. An architecture for frequency hopping cognitive radio networks

Author

Shen Xujian, Dai Huanyao, Kong Depei, Zhou Bo, and Wang Jianlu

Subjects
0209 industrial biotechnology, Engineering, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Software-defined radio, 020901 industrial engineering & automation, Cognitive radio, Radio-frequency engineering, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Frequency-hopping spread spectrum, Digital radio frequency memory, Radio frequency, Architecture, business, Limited resources
Abstract

The radio frequency (RF) spectrum is a limited resource. Spectrum allotment disputes stem from this scarcity as many radio devices are confined to a fixed frequency or frequency sequence. One alternative is to incorporate cognition within a reconfigurable radio platform, therefore enabling the radio to adapt to dynamic RF spectrum environments. In this way, the radio is able to actively observe the RF spectrum, orient itself to the current RF environment, decide on a mode of operation, and act accordingly, thereby sharing the spectrum and operating in more flexible manner. This research presents a novel framework for incorporating several techniques for the purpose of adapting radio operation to the current RF environment.

Published
2016

219. Materials Experiment on Tiangong-2 Space Laboratory

Author

Jiang Hongxiang, Wang Binbin, Hua Zile, Lu Ye, Wang Reng, Xie Wen-Jun, Luo Xinghong, Wei Bing-Bo, Liu Xiangyang, XU Guisheng, Meng Xiang-Jian, Yin Zhigang, LI Xiao-Ya, Chen Lidong, Pan Mingxiang, Li Hong, Zhao Jiuzhou, Shi Jianlin, Zhang Haifeng, Liu Jinfeng, Wang Jianlu, and Zhang Xingwang

Subjects
Materials science, Complementary and alternative medicine, business.industry, 0103 physical sciences, Pharmaceutical Science, Pharmacology (medical), Aerospace engineering, 010306 general physics, business, Space (mathematics), 01 natural sciences, 010305 fluids & plasmas
Published
2018

221. Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Author

Liu, Lan, primary, Wang, Xudong, additional, Han, Li, additional, Tian, Bobo, additional, Chen, Yan, additional, Wu, Guangjian, additional, Li, Dan, additional, Yan, Mengge, additional, Wang, Tao, additional, Sun, Shuo, additional, Shen, Hong, additional, Lin, Tie, additional, Sun, Jinglan, additional, Duan, Chungang, additional, Wang, Jianlu, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2017
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226. Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe 2 channels

Author

Wang, Xudong, primary, Liu, Chunsen, additional, Chen, Yan, additional, Wu, Guangjian, additional, Yan, Xiao, additional, Huang, Hai, additional, Wang, Peng, additional, Tian, Bobo, additional, Hong, Zhenchen, additional, Wang, Yutao, additional, Sun, Shuo, additional, Shen, Hong, additional, Lin, Tie, additional, Hu, Weida, additional, Tang, Minghua, additional, Zhou, Peng, additional, Wang, Jianlu, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, Chu, Junhao, additional, and Li, Zheng, additional

Published
2017
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227. Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection

Author

Wang, Peng, primary, Liu, Shanshan, additional, Luo, Wenjin, additional, Fang, Hehai, additional, Gong, Fan, additional, Guo, Nan, additional, Chen, Zhi-Gang, additional, Zou, Jin, additional, Huang, Yan, additional, Zhou, Xiaohao, additional, Wang, Jianlu, additional, Chen, Xiaoshuang, additional, Lu, Wei, additional, Xiu, Faxian, additional, and Hu, Weida, additional

Published
2017
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229. Interfacial memristors in Al–LaNiO3heterostructures

Author

Tian, Bobo, primary, Nukala, Pavan, additional, Hassine, Mohamed Ben, additional, Zhao, Xiaolin, additional, Wang, Xudong, additional, Shen, Hong, additional, Wang, Jianlu, additional, Sun, Shuo, additional, Lin, Tie, additional, Sun, Jinglan, additional, Ge, Jun, additional, Huang, Rong, additional, Duan, Chungang, additional, Reiss, Thomas, additional, Varela, Maria, additional, Dkhil, Brahim, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2017
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231. Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

Author

Chen, Yan, primary, Wang, Xudong, additional, Wang, Peng, additional, Huang, Hai, additional, Wu, Guangjian, additional, Tian, Bobo, additional, Hong, Zhenchen, additional, Wang, Yutao, additional, Sun, Shuo, additional, Shen, Hong, additional, Wang, Jianlu, additional, Hu, Weida, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2016
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232. XPC Ala499Val and XPG Asp1104His polymorphisms and digestive system cancer risk: a meta-analysis based on model-free approach

Author

Yu, Guangsheng, Wang, Jianlu, Dong, Jiahong, and Liu, Jun

Subjects
Original Article
Abstract

Many studies have reported the association between XPC Ala499Val and XPG Asp1104His polymorphisms and digestive system cancer susceptibility, but the results were inconclusive. We performed a meta-analysis, using a comprehensive strategy based on the allele model and a model-free approach, to derive a more precise estimation of the relationship between XPC Ala499Val and XPG Asp1104His polymorphisms with digestive system cancer risk. For XPC Ala499Val, no significant cancer risk was found in the allele model (OR = 0.98, 95% CI: 0.86-1.11) and with model-free approach (ORG = 0.97, 95% CI: 0.83-1.13). For XPG Asp1104His, there was also no association between this polymorphism and cancer risk in the allele model (OR = 1.03, 95% CI: 0.96-1.11) and with the model-free approach (ORG = 1.04, 95% CI: 0.95-1.14). Therefore, this meta-analysis suggests that the XPC Ala499Val and XPG Asp1104His polymorphisms were not associated with digestive system cancer risk. Further large and well-designed studies are needed to confirm these findings.

Published
2015

233. Spatial Polarization Characteristic Analysis of Monopulse Radar Seeker Antenna

Author

Zhou Bo Zhou Bo, Mo Cuiqiong, Wang Zheng, Wang Jianlu, and Dai Huanyao

Subjects
Physics, Conical scanning, Directional antenna, business.industry, Amplitude-Comparison Monopulse, Antenna measurement, Astrophysics::Instrumentation and Methods for Astrophysics, Choke ring antenna, Radome, Periscope antenna, law.invention, Optics, Monopulse radar, law, business, Computer Science::Information Theory
Abstract

Monopulse radar antenna is one of the most exact electronic directional techonolgies now, and it is extensively used in microwave and millimeter wave tracking, survellian, communication, measurement and astronomical system. However, in order to protect the radar antenna from environment's influence, lots of monopulse antennas all use radome, which will induce affect on antenna's polarization characteristic. Taking the typical parabolic reflector monopulse radar seeker antenna as an example, the influence of radome on monopulse antenna cross polarization characteristic is simulated in different cases, and the reason of cross polarization induced by the antenna radome is analyzed, which provides the important theory basis for research on cross polarization electronic attacking technology to controdict monopulse tracking.

Published
2015

235. Ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition.

Author

Shao, Qianqian, Wang, Xudong, Jiang, Wei, Chen, Yan, Zhang, Xiaoyu, Tu, Luqi, Lin, Tie, Shen, Hong, Meng, Xiangjian, Liu, Aiyun, and Wang, Jianlu

Subjects
PULSED laser deposition, THIN films, FERROELECTRIC thin films, NANOFILMS, FERROELECTRIC materials, SCANNING transmission electron microscopy
Abstract

A HfO2-based thin film is a nanoscale ferroelectric material with a high-k dielectric and CMOS compatibility, which make it a promising candidate for high-performance electronics. Here, we demonstrate the synthesis of a ferroelectric Y-doped HfO2 (HYO) thin film by pulsed laser deposition. This HYO thin film is gradient doped by alternately depositing a HfO2 ceramic target and a Y2O3 ceramic target. In the films, the orthorhombic phase, ferroelectric phase, is proved by grazing incidence x-ray diffraction and scanning transmission electron microscopy measurements. Moreover, the HYO thin film embraces outstanding ferroelectric and dielectric properties, its remanent polarization is up to 10.5 μC/cm2, and the dielectric constant is 27. The 180° inversion of the domain can be observed in a piezoelectric power microscopy image, while the phase contrast of the write domain fades with time. Therefore, this work provides a reliable approach to obtain a ferroelectric HYO thin film, which enables great potential in future high-performance nanoelectronics. [ABSTRACT FROM AUTHOR]

Published
2019
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239. When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors

Author

Zheng, Dingshan, Wang, Jianlu, Hu, Weida, Liao, Lei, Fang, Hehai, Guo, Nan, Wang, Peng, Gong, Fan, Wang, Xudong, Fan, Zhiyong, Wu, Xing, Meng, Xiangjian, Chen, Xiaoshuang, Lu, Wei, Zheng, Dingshan, Wang, Jianlu, Hu, Weida, Liao, Lei, Fang, Hehai, Guo, Nan, Wang, Peng, Gong, Fan, Wang, Xudong, Fan, Zhiyong, Wu, Xing, Meng, Xiangjian, Chen, Xiaoshuang, and Lu, Wei

Abstract

One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D{*}) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D{*} up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.

Published
2016

240. Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect

Author

Huang, Hai, primary, Wang, Jianlu, additional, Hu, Weida, additional, Liao, Lei, additional, Wang, Peng, additional, Wang, Xudong, additional, Gong, Fan, additional, Chen, Yan, additional, Wu, Guangjian, additional, Luo, Wenjin, additional, Shen, Hong, additional, Lin, Tie, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, Chen, Xiaoshuang, additional, and Chu, Junhao, additional

Published
2016
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242. Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

Author

Wu, Guangjian, primary, Wang, Xudong, additional, Wang, Peng, additional, Huang, Hai, additional, Chen, Yan, additional, Sun, Shuo, additional, Shen, Hong, additional, Lin, Tie, additional, Wang, Jianlu, additional, Zhang, Shangtao, additional, Bian, Lifeng, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, and Chu, Junhao, additional

Published
2016
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243. High-Sensitivity Floating-Gate Phototransistors Based on WS2and MoS2

Author

Gong, Fan, primary, Luo, Wenjin, additional, Wang, Jianlu, additional, Wang, Peng, additional, Fang, Hehai, additional, Zheng, Dingshan, additional, Guo, Nan, additional, Wang, Jingli, additional, Luo, Man, additional, Ho, Johnny C., additional, Chen, Xiaoshuang, additional, Lu, Wei, additional, Liao, Lei, additional, and Hu, Weida, additional

Published
2016
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246. When Nanowires Meet Ultrahigh Ferroelectric Field–High-Performance Full-Depleted Nanowire Photodetectors

Author

Zheng, Dingshan, primary, Wang, Jianlu, additional, Hu, Weida, additional, Liao, Lei, additional, Fang, Hehai, additional, Guo, Nan, additional, Wang, Peng, additional, Gong, Fan, additional, Wang, Xudong, additional, Fan, Zhiyong, additional, Wu, Xing, additional, Meng, Xiangjian, additional, Chen, Xiaoshuang, additional, and Lu, Wei, additional

Published
2016
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247. Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

Author

Huang, Hai, primary, Wang, Xudong, additional, Wang, Peng, additional, Wu, Guangjian, additional, Chen, Yan, additional, Meng, Caimin, additional, Liao, Lei, additional, Wang, Jianlu, additional, Hu, Weida, additional, Shen, Hong, additional, Lin, Tie, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, Chen, Xiaoshuang, additional, and Chu, Junhao, additional

Published
2016
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248. Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (Adv. Mater. 42/2015)

Author

Wang, Xudong, primary, Wang, Peng, additional, Wang, Jianlu, additional, Hu, Weida, additional, Zhou, Xiaohao, additional, Guo, Nan, additional, Huang, Hai, additional, Sun, Shuo, additional, Shen, Hong, additional, Lin, Tie, additional, Tang, Minghua, additional, Liao, Lei, additional, Jiang, Anquan, additional, Sun, Jinglan, additional, Meng, Xiangjian, additional, Chen, Xiaoshuang, additional, Lu, Wei, additional, and Chu, Junhao, additional

Published
2015
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250. Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions.

Author

Cao, Xinran, Meng, Caimin, Li, Jing, Wang, Jun, Yuan, Yafei, Su, Jing, Liu, Chunmin, Zhang, Xintong, Zhang, Hao, and Wang, Jianlu

Abstract

In this study, bipolar memristive behaviors were systematically characterized in Ag/Sb2Te3/Ag hetero-junctions. By using in situ Raman and photoluminescence spectroscopy, a direct observation of the bonding environment and band structure confirmed that resistive switches are strongly related to the electronic valence changes in Sb2Te3 and the formation of Schottky barriers at Ag/Sb2Te3 interfaces. Band movement of Sb2Te3 acquired by first-principles calculations also supports the electrostatic barrier charging as a memristive mechanism of Ag/Sb2Te3/Ag heterocells. Independent resistance-switching behaviors that can be utilized in both amorphous and crystalline Sb2Te3 lead to multiple resistance values with a large memory window (104–105) and low read voltage (∼0.2 V), giving rise to a unique multi-level memory concept. This study based on Ag/Sb2Te3/Ag hetero-junctions offers a significant understanding to promote the use of Sb2Te3 and other chalcogenide memristors as promising candidates for compatible high-density memory applications. [ABSTRACT FROM AUTHOR]

Published
2018
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