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We report the observation of commensurability oscillations of hole-flux composite fermions near filling factor $\nu=1/2$ in a high-mobility two-dimensional hole system confined to a GaAs quantum well, and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The oscillations, which are consistent with ballistic transport of fully spin-polarized composite fermions in a weak periodic effective magnetic field, are surprisingly strong and exhibit up to third-order minima. We extract a ballistic mean-free-path of about 0.2 $\mu$m for the hole-flux composite fermions., Comment: 5 pages, 3 figures

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes., Comment: 5 pages, 4 figures

Measurements in clean two-dimensional electron systems confined to wide GaAs quantum wells in which two electric subbands are occupied reveal an unexpected rotation of the orientation of the stripe phase observed at a half-filled Landau level. Remarkably, the reorientation is sensitive to the spin of the half-filled Landau level and the symmetry of the charge distribution in the quantum well.

We report on quantum magneto-oscillations in an ultra-high mobility GaAs/AlGaAs quantum well at very high tilt angles. Unlike previous studies, we find that the spin and cyclotron splittings become equal over a continuous range of angles, but only near certain, angle-dependent filling factors. At high enough tilt angles, Shubnikov-de Haas oscillations reveal a prominent beating pattern, indicative of consecutive level crossings, all occurring at the same angle. We explain these unusual observations by an in-plane field-induced increase of the carrier mass, which leads to accelerated, filling factor-driven crossings of spin sublevels in tilted magnetic fields.

Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory.

The integer and fractional quantum Hall states are known to break down at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the \nu = 2, 3, 4, 5 integer and the \nu = 4/3 and 5/3 fractional states in a quantum point contact (QPC) of lithographic width ~600 nm. Dependence of the critical current on magnetic field, QPC gate voltage, and QPC width are presented. Of particular interest, the critical current of the 4/3 and 5/3 fractional states shows the opposite dependence on QPC width compared to the integer states. This previously unobserved result is not explained by current theories of breakdown.

The low-lying neutral excitation spectrum of the incompressible quantum Hall fluid at $\nu=5/2$ is investigated by inelastic light scattering. Gapped modes are observable only in a very narrow filling factor range centered at 5/2 at energies that overlap estimates from transport activation gaps. The modes are interpreted as critical points in the wave-vector dispersion of excitations that preserve spin orientation. For very small changes $|\delta\nu|\lesssim 0.01$ the gapped modes disappear and a continuum of low-lying excitations takes over indicating the transition from an incompressible fluid at 5/2 to a compressible state. Observations of spin wave modes indicate spin polarization of the 5/2 and 2+1/3 quantum Hall fluids., Comment: 4 pages, 3 figures

Non-Abelian e/4 quasiparticles at 5/2 filling factor in a correlated two-dimensional electron gas have a proposed specific property in an interference measurement of their edge propagation: encircling an even number of localized e/4 quasiparticles allows expression of e/4 Aharonov-Bohm (A-B) oscillations, but suppression of these oscillations will occur with an odd number encircled. This picture is tested explicitly here in multiple interferometers of different areas. The encircled localized e/4 quasiparticle number near 5/2 filling factor is changed by sweeping B-field, and oscillations are observed in resistance near 5/2 of period specific to that device area for each interferometer. The product of the measured interferometric area of each device and the respective 5/2 resistance oscillation period is found to agree with the expected flux quanta addition needed for parity change in the localized e/4 number. This result shows a highly specific non-Abelian property of the quasiparticle excitations at 5/2 filling expressed in multiple interferometers., Comment: 18 pages, 5 figures

We have carried out tilt magnetic field (B) studies of the \nu=12/5 fractional quantum Hall state in an ultra-high quality GaAs quantum well specimen. Its diagonal magneto-resistance Rxx shows a non-monotonic dependence on tilt angle (\theta). It first increases sharply with increasing \theta, reaches a maximal value of ~ 70 ohms at \theta ~ 14^o, and then decreases at higher tilt angles. Correlated with this dependence of Rxx on \theta, the 12/5 activation energy (\Delta_{12/5}) also shows a non-monotonic tilt dependence. \Delta_{12/5} first decreases with increasing \theta. Around \theta = 14^{o}, \Delta_{12/5} disappears as Rxx becomes non-activated. With further increasing tilt angles, \Delta_{12/5} reemerges and increases with \theta. This tilt B dependence at \nu=12/5 is strikingly different from that of the well-documented 5/2 state and calls for more investigations on the nature of its ground state.

We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5 x 10^{11} to 3 x 10^{11} cm^{-2}, the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. For the 8/3 state, however, its energy gap first decreases with increasing density, almost vanishes at n ~ 0.8 x 10^{11} cm^{-2}, and then turns around and increases with increasing density, clearly demonstrating a spin transition., Comment: Accepted for publication in Phys. Rev. Lett

Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $\nu = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle $0 < \theta < 25^\circ$ (corresponding to an in-plane magnetic field 0 $<$ $B_\parallel$ $< 0.8$ T). In the same range of $\theta$ the activation gaps of both the 7/3 and the 8/3 states are found to increase with tilt. The 5/2 state transforms into a compressible Fermi liquid upon tilt angle $\theta > 60^\circ$, and the composite fermion series [2+$p/(2p\pm1)$], $p =$ 1, 2 can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at $\nu = 5/2$ associated with small Zeeman energy in wide quantum wells, as proposed by W$\acute{\text o}$js $et$ $al$., Phys. Rev. Lett. 104, 086801 (2010)., Comment: 5+ pages, 3 figures, accepted for by Phy. Rev. Lett

Coulomb drag is a process whereby the repulsive interactions between electrons in spatially separated conductors enable a current flowing in one of the conductors to induce a voltage drop in the other. If the second conductor is part of a closed circuit, a net current will flow in that circuit. The drag current is typically much smaller than the drive current owing to the heavy screening of the Coulomb interaction. There are, however, rare situations in which strong electronic correlations exist between the two conductors. For example, bilayer two-dimensional electron systems can support an exciton condensate consisting of electrons in one layer tightly bound to holes in the other. One thus expects "perfect" drag; a transport current of electrons driven through one layer is accompanied by an equal one of holes in the other. (The electrical currents are therefore opposite in sign.) Here we demonstrate just this effect, taking care to ensure that the electron-hole pairs dominate the transport and that tunneling of charge between the layers is negligible., Comment: 12 pages, 4 figures

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$ K. Unlike the zero-field resistivity which saturates at $T \simeq 2 $ K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections.

Some models of the 5/2 fractional quantum Hall state predict that the quasi-particles, which carry the charge, have non-Abelian statistics: exchange of two quasi-particles changes the wave function more dramatically than just the usual change of phase factor. Such non-Abelian statistics would make the system less sensitive to decoherence, making it a candidate for implementation of topological quantum computation. We measure quasi-particle tunneling as a function of temperature and DC bias between counter-propagating edge states. Fits to theory give e*, the quasi-particle effective charge, close to the expected value of e/4 and g, the strength of the interaction between quasi-particles, close to 3/8. Fits corresponding to the various proposed wave functions, along with qualitative features of the data, strongly favor the Abelian 331 state.

We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor {\nu} = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at {\nu} = 2/3 a tunneling charge of (2/3)e and a single charged edge., Comment: related papers at http://marcuslab.harvard.edu

We report on experimental studies of magnetoresistance oscillations that originate from the resonant interaction of two-dimensional electrons with thermal transverse-acoustic phonons in very high-mobility GaAs/AlGaAs quantum wells. We find that the oscillation maxima consistently occur when a frequency of a phonon with twice the Fermi momentum exceeds an integer multiple of the cyclotron frequency. This observation is in contrast to to all previous experiments associating resistance maxima with magnetophonon resonance and its harmonics. Our experimentally obtained resonant condition is in excellent quantitative agreement with recent theoretical proposals.

Theories of microwave-induced resistance oscillations in high-mobility two-dimensional electron gas predict that with decreasing oscillation order $n$ or with increasing frequency $\omega$ the photoresistance maxima should appear closer to the cyclotron resonance harmonics due to increased Landau level separation. In this experimental study we demonstrate that while for a given $\omega$ the peaks do move towards the harmonics with decreasing $n$, there is no corresponding movement with increasing $\omega$ for a given $n$. These findings show that the positions of the photoresistance maxima cannot be directly linked to the Landau level separation challenging our current understanding of the phenomenon.

We report on experimental and theoretical studies of microwave-induced resistance oscillations in a two-dimensional electron gas over a wide range of microwave intensities. We observe a distinct crossover from linear to sublinear power dependence of the oscillation amplitude and a concomitant narrowing of the oscillation extrema. To explain our observations we propose a theory based on the quantum kinetic equation at arbitrary microwave power. Taken together, these findings demonstrate a crucial role of multiphoton processes at elevated microwave intensities.

In this paper, we report on the study of Abelian and non-Abelian statistics through Fabry-Perot interferometry of fractional quantum Hall (FQH) systems. Our detection of phase slips in quantum interference experiments demonstrates a powerful, new way of detecting braiding of anyons. We confirm the Abelian anyonic braiding statistics in the $\nu = 7/3$ FQH state through detection of the predicted statistical phase angle of $2\pi/3$, consistent with a change of the anyonic particle number by one. The $\nu = 5/2$ FQH state is theoretically believed to harbor non-Abelian anyons which are Majorana, meaning that each pair of quasiparticles contain a neutral fermion orbital which can be occupied or unoccupied and hence can act as a qubit. In this case our observed statistical phase slips agree with a theoretical model where the Majoranas are strongly coupled to each other, and strongly coupled to the edge modes of the interferometer. In particular, an observed phase slip of approximately $\pi$ is interpreted as a sudden flip of a qubit, or entry of a neutral fermion into the interferometer. Our results provide compelling support for the existence of non-Abelian anyons., Comment: 15 pages with supplemental information

Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3 and 5/3 in the constrictions are compared to corresponding oscillations near integer quantum Hall (IQH) filling factors in the constrictions, appearing in the same devices and at the same gate voltages. Two-dimensional plots of resistance versus gate voltage and magnetic field indicate that all oscillations are Coulomb dominated. Applying a Coulomb charging model yields an effective tunneling charge e* \approx e/3 for all FQH constrictions and e* \approx e for IQH constrictions. Surprisingly, we find a common characteristic temperature for FQH oscillations and a different common characteristic temperature for IQH oscillations.

Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors $\nu=4/5$ and 6/5. These states are not seen at low densities and become more prominent with increasing density and in wider wells. Our data suggest a close competition between different types of Wigner crystal states near these fillings. We also observe an intriguing disappearance and reemergence of the $\nu=4/5$ fractional quantum Hall effect with increasing density.

We present a study of the exchange bias in different configurations of V2O3 thin films with ferromagnetic layers. The exchange bias is accompanied by a large vertical shift in the magnetization. These effects are only observed when V2O3 is grown on top of Ni80Fe20 permalloy. The magnitude of the vertical shift is as large as 60% of the total magnetization which has never been reported in any system. X-Ray diffraction studies show that the growth conditions promote the formation of a ferrimagnetic Fe3O4 interlayer. The change in the easy magnetization axis of Fe3O4 across the Verwey transition at 120 K is correlated with the appearance of exchange bias and vertical shift in magnetization. Both phenomena disappear above 120 K, indicating for the first time a direct relationship between the magnetic signature of the Verwey transition and exchange bias., Comment: Accepted for publication Physical Review B

We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear temperature dependence below 10 K and the exponential temperature dependence above 40 K agree with existing theory of electron-phonon scattering, a field induced resistivity saturation behaviour characterized by an almost complete suppression of the temperature dependence is observed from approximately 20 to 40 K, which is in sharp contrast to the phenomenology observed when the current is parallel to the field. Possible origins of this intriguing intermediate temperature phenomenon are discussed., Comment: 5 pages, 3 figures

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

We compare the energy gap of the \nu=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder., Comment: PRL 106, 206806 (2011)

We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.

We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt-angle, or symmetry of the charge distribution. When the charge distribution is strongly asymmetric, there is a remarkable persistence of a resistance minimum near $\nu=7/2$ when two Landau levels belonging to the two subbands cross at the Fermi energy. The field position of this minimum tracks the 5/2 filling of the symmetric subband, suggesting a pinning of the crossing levels and a developing 5/2 FQHS in the symmetric subband even when the antisymmetric level is partially filled.

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $\nu=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $\nu=5/2$ on Landau level mixing., Comment: PRB 84, R121305 (2011)

We find unexpected low energy excitations of fully spin-polarized composite-fermion ferromagnets in the fractional quantum Hall liquid, resulting from a complex interplay between a topological order manifesting through new energy levels and a magnetic order due to spin polarization. The lowest energy modes, which involve spin reversal, are remarkable in displaying unconventional negative dispersion at small momenta followed by a deep roton minimum at larger momenta. This behavior results from a nontrivial mixing of spin-wave and spin-flip modes creating a spin-flip excitonic state of composite-fermion particle-hole pairs. The striking properties of spin-flip excitons imply highly tunable mode couplings that enable fine control of topological states of itinerant two-dimensional ferromagnets., Comment: 4 pages, 4 figures

Electrons in artificial lattices enable explorations of the impact of repulsive Coulomb interactions in a tunable system. We have trapped two-dimensional electrons belonging to a gallium arsenide quantum well in a nanofabricated lattice with honeycomb geometry. We probe the excitation spectrum in a magnetic field identifying novel collective modes that emerge from the Coulomb interaction in the artificial lattice as predicted by the Mott-Hubbard model. These observations allow us to determine the Hubbard gap and suggest the existence of a novel Coulomb-driven ground state. This approach offers new venues for the study of quantum phenomena in a controllable solid-state system., Comment: 10 pages, 10 figures

We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy ($E_F$) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once $E_F$ moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample., Comment: 4 pages, 5 figures, prepared with LaTex2e

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK.

Recent experiments on microwave-irradiated high-mobility two-dimensional electron systems revealed a novel photoresistivity peak in the vicinity of the second cyclotron resonance harmonic. Here we report on the nonlinear transport measurements and demonstrate that the peak can be induced by modest dc fields and that its position is not affected even by strong dc fields, in contrast to microwave-induced resistance oscillations that shift to higher magnetic fields. These findings reinforce the notion that the peak cannot be described by existing models and provides important constraints for further theoretical considerations., Comment: 4 pages, 3 figures

We report the observation of a remarkably strong microwave photoresistivity effect in a high-mobility two-dimensional electron system subject to a weak magnetic field and low temperature. The effect manifests itself as a giant microwave-induced resistivity peak which, in contrast to microwave-induced resistance oscillations, appears only near the second harmonic of the cyclotron resonance and only at sufficiently high microwave frequencies. Appearing in the regime linear in microwave intensity, the peak can be more than an order of magnitude stronger than the microwave-induced resistance oscillations and cannot be explained by existing theories., Comment: 4 pages, 4 figures

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility metallic phase at low field is consistent with the established Fermi liquid transport theory including phonon scattering, whereas the insulating phase at higher field shows a large negative temperature dependence at resistances much smaller than the quantum of resistance, $h/e^2$. We argue that this observation is a direct manifestation of a quantum-classical crossover arising predominantly from the magneto-orbital coupling between the finite width of the 2DEG and the in-plane magnetic field., Comment: 4 pages, 2 figures

We have studied the effect of an in-plane magnetic field on Hall field-induced resistance oscillations in high mobility two-dimensional electron systems. We have found that the oscillation frequency depends only on the perpendicular component of the magnetic field but the oscillation amplitude decays exponentially with an in-plane component. While these findings cannot be accounted for by existing theories of nonlinear transport, our analysis suggests that the decay can be explained by an in-plane magnetic field-induced modification of the quantum scattering rate., Comment: 4 pages, 3 figures

We demonstrate that counterflowing electrical currents can move through the bulk of the excitonic quantized Hall phase found in bilayer two-dimensional electron systems (2DES) even as charged excitations cannot. These counterflowing currents are transported by neutral excitons which are emitted and absorbed at the inner and outer boundaries of an annular 2DES sample via an Andreev reflection process., Comment: 4+ pages, 4 figures. Revised version as accepted for publication in Physical Review Letters

Evidence is presented for the finite wave vector crossing of the two lowest one-dimensional spin-split subbands in quantum point contacts fabricated from two-dimensional hole gases with strong spin-orbit interaction. This phenomenon offers an elegant explanation for the anomalous sign of the spin polarization filtered by a point contact, as observed in magnetic focusing experiments. Anticrossing is introduced by a magnetic field parallel to the channel or an asymmetric potential transverse to it. Controlling the magnitude of the spin-splitting affords a novel mechanism for inverting the sign of the spin polarization., Comment: 4 pages, 3 figures

Coulomb exchange interactions of electrons in the nu=3 quantum Hall state are determined from two inter-Landau level spin-flip excitations measured by resonant inelastic light scattering. The two coupled collective excitations are linked to inter-Landau level spin-flip transitions arising from the N=0 and N=1 Landau levels. The strong repulsion between the two spin-flip modes in the long-wave limit is clearly manifested in spectra displaying Coulomb exchange contributions that are comparable to the exchange energy for the quantum Hall state at nu=1. Theoretical calculations within the Hartree-Fock approximation are in a good agreement with measured energies of spin-flip collective excitations., Comment: 5 pages, 3 figures, to appear in PRB Rapid Communications

Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy., Comment: 8 pages, 6 figures

We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude > 300% of the MIRO, and a typical FWHM ~50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and smooth disorder. Alternatively, the spike may be interpreted as a manifestation of quantum interference between the quadrupole resonance and the higher-order cyclotron transition in well-separated Landau levels., Comment: 4pages, 4figures

GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns. Here we study how disorder affects the spatial structure of electron transport by imaging electron flow in three different GaAs/AlGaAs 2DEGs, whose mobilities range over an order of magnitude. As expected, electrons flow along narrow branches that we find remain straight over a distance roughly proportional to the mean free path. We also observe two unanticipated phenomena in high-mobility samples. In our highest-mobility sample we observe an almost complete absence of sharp impurity or defect scattering, indicated by the complete suppression of quantum coherent interference fringes. Also, branched flow through the chaotic potential of a high-mobility sample remains stable to significant changes to the initial conditions of injected electrons., Comment: 22 pages, 4 figures, 1 table

We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through the system thus varies as a function of the distance between the QPC and SGM tip. We characterize how temperature, electron wavelength, cavity length, and reflectivity of the QPC barrier affect the interferometer. We report checkerboard interference patterns near the QPC and, when injecting electrons above or below the Fermi energy, effects of dephasing., Comment: Text and supplementary information. Text: 4 pages, 4 figures. Supplementary information: 5 pages, 2 figures

Calculations of the single particle density of states (SPDOS) of electron liquids have long predicted that there exist two distinct charged excitations: the usual quasiparticle consisting of an electron or hole screened by a correlation hole, and a "plasmaron" consisting of a hole resonantly bound to real plasmons in the Fermi sea(1,2). Using tunneling spectroscopy to measure the SPDOS of a two-dimensional electronic system, we demonstrate the first detection of the plasmaron in a system in which electrons have mass. We monitor the evolution of the plasmaron with applied magnetic field and discover unpredicted "magnetoplasmarons" which appear in spectra as negative index Landau levels. These sharp features corresponding to long-lived quasiparticles appear at high energies where SPDOS structure is ordinarily broadened by electron-electron interactions.

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor $\nu=2+6/13$. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.omposite fermion model. However, the weaker 2+2/5 and 2+6/13 states deviate significantly suggesting that these states are of exotic origin.

Using an ultra-low temperature, high magnetic field scanning probe microscope, we have measured electric potentials of a deeply buried two dimensional electron gas (2DEG). Relying on the capacitive coupling between the 2DEG and a resonant tip/cantilever structure, we can extract electrostatic potential information of the 2DEG from the dynamics of the oscillator. We present measurements using a quartz tuning fork oscillator and a 2DEG with a cleaved edge overgrowth structure. The sensitivity of the quartz tuning fork as force sensor is demonstrated by observation of Shubnikov de Haas oscillations at a large tip-2DEG separation distance of more than 500 nm.

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

We report on a state characterized by a zero differential resistance observed in very high Landau levels of a high-mobility two-dimensional electron system. Emerging from a minimum of Hall field-induced resistance oscillations at low temperatures, this state exists over a continuous range of magnetic fields extending well below the onset of the Shubnikov-de Haas effect. The minimum current required to support this state is largely independent on the magnetic field, while the maximum current increases with the magnetic field tracing the onset of inter-Landau level scattering.