477 results on '"Voelskow, M."'
Search Results
202. Investigation of ion-implantation induced damage in 6H-SiC by RBS/C and Positron Annihilation Spectroscopy
203. Formation of buried layers of (SiC)1-x(AlN)x in 6H-SiC using ion-beam synthesis
204. Kristallgitter-Einbau implantierter Ionen in 6H-SiC
205. Computer-simulation and RBS/C studies of high-dose N+ and Al+ co-implantation in 6H-SiC
206. Structural studies of buried (SiC)1-x(AlN)x layers fabricated by co-implantation of nitrogen and aluminium ions in 6H-SiC
207. Density and structural changes of SiC after amorphization and annealing
208. Visokotemperaturnaja implantazia ionov N+ i Al+ v 6H-SiC pri visokich dosach
209. Computer-simulation and RBS/C studies of high-dose N+ and Al+ co-implantation in 6H-SiC
210. Ion beam synthesis and characterization of buried (SiC)1-x(AlN)x layers in 6H-SiC
211. Superconductor-insulator transition controlled by annealing in Ga implanted Si
212. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations
213. Superconducting films fabricated by high-fluence Ga implantation in Si
214. Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2
215. On-chip superconductivity via gallium overdoping of silicon
216. Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
217. Superconductivity in thin-film germanium in the temperature regime around 1 K
218. Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas
219. Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-dopedSiO2layers
220. Investigating the role of hydrogen in indium oxide tubular nanostructures as a donor or oxygen vacancy passivation center
221. Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures
222. Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure
223. Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
224. Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere
225. Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal enriched Er-dopedSiO2layers
226. SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
227. Enhanced blue-violet emission by inverse energy transfer to the Ge-related oxygen deficiency centers via Er3+ ions in metal-oxide semiconductor structures
228. The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ion implantation and subsequent hydrogen transfer
229. Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
230. Structure and Lattice Location of Ge Implanted 4H-SiC
231. Millisecond processing beyond chip technology: From electronics to photonics
232. Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film
233. Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy
234. Ion beam synthesis of 4H-(Si1-xC1-y)Gex+ysolid solutions
235. Millisecond Annealing with Flashlamps: Tool and Process Challenges
236. Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass
237. Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates
238. Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions
239. Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
240. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
241. Enhancement of the Probability of Occurrence for Off-Shore Wind Farm Power Forecast.
242. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
243. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing.
244. Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge+ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing
245. Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields
246. The influence of the implantation sequence on the (SiC)1−x(AlN)x formation
247. Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation.
248. Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
249. A novel (SiC)1−x(AlN)x compound synthesized using ion beams
250. RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation
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