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We have used an atomistic {\it ab initio} approach with no adjustable parameters to compute the lattice thermal conductivity of Si$_{0.5}$Ge$_{0.5}$ with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact Green's function calculation of the nanoparticle scattering rates, we find that embedding Ge nanoparticles in $\text{Si}_{0.5}\text{Ge}_{0.5}$ provides 20% lower thermal conductivities than embedding Si nanoparticles. This contrasts with the Born approximation which predicts an equal amount of reduction for the two cases, irrespective of the sign of the mass difference. Despite these differences, we find that the Born approximation still performs remarkably well, and it permits investigation of larger nanoparticle sizes, up to 60 nm in diameter, not feasible with the exact approach., Comment: 13 pages, 5 figures, Accepted for publication in Physical Review B

If a linear combination of k smooth vector fields is zero at a point, then, generically, near this point there are small cycles comprised of segments from the flow of each vector field. This answers a question posed in arXiv:math/0504365., Comment: 4 pages, no figures. Answers question posed in arXiv:math/0504365

We demonstrate the first operation of CdZnTe room-temperature detectors in a liquid scintillator environment. This work follows conceptually the Heusser-type detector method of operating HPGe detectors in liquid nitrogen and liquid argon but instead for a far more practical room-temperature ensemble with the aim of achieving ultra-low background levels for radiation detection., Comment: 7 pages, 1 figure

We present methods to improve the energy resolution of single-channel, room-temperature Cadmium-Zinc-Telluride (CZT) detectors. A new preamplifier design enables the acquisition of the actual transient current from the crystals and straightforward data analysis methods yield unprecedented energy resolution for our test-detectors. These consist of an eV-CAPture Plus crystal as standard and 1 cm cube Frisch collar crystals created in-house from low-grade coplanar grid detectors. Energy resolutions of 1.9% for our collar detectors and 0.8% for the eV crystal at 662 keV were obtained. The latter compares favourably to the best existing energy resolution results from pixel detectors., Comment: 12 pages, 10 figures, 1 table, submitted to Journal of Instrumentation

Four 1cm^3 CdZnTe semiconductor detectors were operated in the Gran Sasso National Laboratory to explore the feasibility of such devices for double beta decay searches as proposed for the COBRA experiment. The research involved background studies accompanied by measurements of energy resolution performed at the surface. Energy resolutions sufficient to reduce the contribution of two-neutrino double beta decay events to a negligible level for a large scale experiment have already been achieved and further improvements are expected. Using activity measurements of contaminants in all construction materials a background model was developed with the help of Monte Carlo simulations and major background sources were identified. A total exposure of 4.34 kg.days of underground data has been accumulated allowing a search for neutrinoless double beta decay modes of seven isotopes found in CdZnTe. Half-life limits (90% C.L.) are presented for decays to ground and excited states. Four improved lower limits have been obtained, including zero neutrino double electron capture transitions of Zn64 and Te120 to the ground state, which are 1.19*10^{17} years and 2.68*10^{15} years respectively., Comment: 8 pages, 7 figures

The design task of creating an efficient radiation shield for the new COBRA double-beta decay experiment led to a comprehensive study of commercially available shielding materials. The aim was to find the most efficient combination of materials under the constraints of an extreme low-background experiment operating in a typical underground laboratory. All existing shield configurations for this type of experiment have been found to perform sub-optimally in comparison to the class of multilayered configurations proposed in this study. The method used here to create a specific shield configuration should yield a close to optimal result when applied to any experiment utilising a radiation shield. In particular, the survey of single material response to a given radiation source turns out to give a guideline for the construction of efficient multilayer shields., Comment: 19 pages, 15 figures

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the spin polarization is primarily determined by the electronic and atomic structure of the ferromagnet/insulator interfaces rather than by their bulk properties. First, we consider a simple tight-binding model which demonstrates that the existence of interface states and their contribution to the tunneling current depend on the degree of hybridization between the orbitals on metal and insulator atoms. The decisive role of the interfaces is further supported by studies of spin-dependent tunneling within realistic first-principles models of Co/vacuum/Al, Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs. We find that variations in the atomic potentials and bonding strength near the interfaces have a profound effect resulting in the formation of interface resonant states, which dramatically affect the spin polarization and TMR. The strong sensitivity of the tunneling spin polarization and TMR to the interface atomic and electronic structure dramatically expands the possibilities for engineering optimal MTJ properties for device applications., Comment: 22 pages

Generically, every fixed point for the differential inclusion x' in ConvexHull{f_1,f_2} can be approximated by an arbitrarily small two-cycle for the inclusion x' in {f_1,f_2}, where f_1, f_2 are a C^1 flows on R^n.

Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple sharp peaks in the infrared, visible, and ultraviolet ranges. The operation of such devices in the nanoscale regime leads to unusual size effects, where the photocurrent scales linearly and oscillates with device length. The oscillations can be related to the density of states in the valence band, a factor that also determines the relative magnitude of the photoresponse for different bands., Comment: 5 pages, 4 figures, submitted

We demonstrate that the factorization of the tunneling transmission into the product of two surface transmission functions and a vacuum decay factor allows one to generalize Julliere's formula and explain the meaning of the ``tunneling density of states'' in some limiting cases. Using this factorization we calculate spin-dependent tunneling from clean and oxidized fcc Co surfaces through vacuum into Al using the principal-layer Green's function approach. We demonstrate that a monolayer of oxygen on the Co (111) surface creates a spin-filter effect due to the Co-O bonding which produces an additional tunneling barrier in the minority-spin channel. This changes the minority-spin dominated conductance for the clean Co surface into a majority spin dominated conductance for the oxidized Co surface., Comment: 7 pages, revtex4, 4 embedded eps figures

The temperature dependence of Coulomb blockade peak height correlation is used to investigate how adding electrons to a quantum dot alters or "scrambles" its electronic spectrum. Deviations from finite-temperature random matrix theory with an unchanging spectrum indicate spectral scrambling after a small number of electrons are added. Enhanced peak-to-peak correlations at low temperature are observed. Peak height statistics show similar behavior in several dot configurations despite significant differences in correlations., Comment: related papers at http://www.stanford.edu/group/MarcusLab/grouppubs.html

We have studied the ground and excited state spectra of a semiconductor quantum dot for successive numbers of electron occupancy using linear and nonlinear magnetoconductance measurements. We present the first observation of direct correlation between the mth excited state of the N electron system and the ground state of the N+m electron system for m up to 4. Results are consistent with a non-spin-degenerate single particle picture of the filling of levels. Electron-electron interaction effects are also observed as a perturbation to this model. Magnetoconductance fluctuations of ground states are shown as anticrossings where wavefunction characteristics are exchanged between adjacent levels., Comment: 8 pages pdf; gzipped ps available at http://www-leland.stanford.edu/group/MarcusLab/grouppubs.html

Distributions of Coulomb blockade peak spacing are reported for large ensembles of both unbroken (magnetic field B = 0) and broken (B <> 0) time reversal symmetry in GaAs quantum dots. Both distributions are symmetric and roughly gaussian with a width ~ 2-6% of the average spacing, with broad, non-gaussian tails. The distribution is systematically wider at B = 0 by a factor of ~ 1.2 +- 0.1. No even-odd spacing correlations or bimodal structure in the spacing distribution is found, suggesting an absence of spin-degeneracy. There is no observed correlation between peak spacing and peak height., Comment: To appear in PRL; 13 pages, one table, 3 figures; pdf available at http://www-leland.stanford.edu/group/MarcusLab/papers/Patel_peakspacing.pdf