Search

Your search keyword '"Rizzi G"' showing total 802 results
Start Over Author "Rizzi G"
802 results on '"Rizzi G"'

225. [Comparison of MR and CT in a radiological study of Cushing's syndrome. A report on 16 cases]

Author

Avataneo, T., Potenzoni, F., Cesarani, F., Isaia, Giovanni Carlo, and Rizzi, G.

Subjects
Adenoma, Adult, Male, Adrenocortical Hyperfunction, Adolescent, Carcinoma, Adrenal Gland Neoplasms, Middle Aged, Magnetic Resonance Imaging, Humans, Female, Tomography, X-Ray Computed, Cushing Syndrome, Aged
Abstract

In 16 patients with high cortisol plasma levels MRI and CT investigation of adrenal gland region was performed; 13 also had the pituitary region examined. CT and MRI results in Cushing's Syndrome due to adrenal glands etiology (8 cases) are overlapping. The morphological criteria utilized consist in the radiological finding of bilateral adrenal hyperplasia or adrenal mass (adenoma, carcinoma). The great amount of retroperitoneal fat increases the normal contrast with both techniques. In the pituitary Cushing's Syndrome MRI was more sensible than CT as far as it concerns ACTH producing pituitary lesion assessment; this technique may show 5 mm diameter adenomas for their high signal intensity.

Published
1990

234. Effect of Interfacial SiOxDefects on the Functional Properties of Si-Transition Metal Oxide Photoanodes for Water Splitting

Author

Ragonese, P., Kalinic, B., Franco, L., Girardi, L., Fernández Peréz, B. M., Carbonera, D., Mattei, G., Rizzi, G.-A., and Maurizio, C.

Abstract

The transfer of photogenerated charges through interfaces in heterojunction photoanodes is a key process that controls the efficiency of solar water splitting. Considering Co3O4/SiOx/Si photoanodes prepared by physical vapor deposition as a representative case study, it is shown that defects normally present in the native SiOxlayer dramatically affect the onset of the photocurrent. Electron paramagnetic resonance indicates that the signal of defects located in dangling bonds of trivalent Si atoms at the Si/SiOxinterface vanishes upon vacuum annealing at 850 °C. Correspondingly, the photovoltage of the photoanode increases to ≈500 mV. Similar results are obtained for NiO/SiOx/Si photoanodes. Photoelectrochemical analysis and impedance spectroscopy (in solution and in the solid state) indicate how the defect annealing modifies the Co3O4/SiOx/Si junction. This work shows that defect annealing at the solid–solid interface in composite photoanodes strongly improves the efficiency of charge transfer through interfaces, which is the basis for effective solar-to-chemical energy conversion.

Published
2023
Full Text
View/download PDF

248. Glass-Ceramics as Coatings for Prostheses

Author

Dubini, B., primary, Krajewski, A., additional, Mazzocchi, M., additional, Bossi, M.G. Ponzi, additional, Ravaglioli, A., additional, Rizzi, G., additional, Rustichelli, F., additional, Stanic, V., additional, Giardino, R., additional, Nicoli-Aldini, N., additional, Verné, Enrica, additional, and Vitale-Brovarone, Chiara, additional

Published
2000
Full Text
View/download PDF

250. A PE-MOCVD route to V2O5 nanostructured thin films

Author

Barreca, D., primary, Battiston, G. A., additional, Caccavalec, F., additional, di Noto, V., additional, Gerbasi, R., additional, Gregori, A., additional, Rizzi, G. A., additional, Tiziani, A., additional, and Tondello, E., additional

Published
1999
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results