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Full-wave analysis is employed to determine the far-field pattern and input impedance of a dipole-fed horn antenna in a ground plane, and the theoretical results are compared with mm-wave and microwave data. The theoretical work exploits the Green's function corresponding to the horn structure and the method of moments. It is determined that the horn should have 70 sections/wavelength and 50 secondary modes for optimized accuracy, and certain dipole positions can reduce the resonance to zero. The experimentally derived impedance and radiation patterns agree with the constraints developed theoretically. The 70-degree flare-angle horn with selected dipole positions and horn apertures yields good radiation patterns, cross-polarization levels, and resonant dipole impedances. The conclusions are of interest to the development of the horn antennas etched in Si/GaAs for applications to zero-visibility tracking, radio astronomy, plasma diagnostics, and remote sensing.

A novel monolithic power meter has been developed for submillimeter-wave applications (100 GHz to 10 THz). The detector is a large-area bismuth bolometer integrated on a 1.2-micron-thick dielectric membrane. This approach results in a wide-band, high-responsivity detector. The power meter is simple to fabricate, is inexpensive, and can be easily calibrated using a low-frequency network. Quasi-optical measurements at 90, 140, and 240 GHz show that the bolometer is polarization-independent and could be modeled by a simple transmission line model. Absolute power measurements at 90, 140, and 240 GHz show a + or - 5 percent accuracy and agree well with a calibrated Anritsu power meter at 90 GHz. Potential application areas are power calibration, antenna coupling efficiency measurements, and absolute power measurements from solid-state devices and far-infrared lasers at submillimeter wavelengths. Absolute output power measurements on a 220-280 GHz tripler using the quasi-optical power meter are presented as an application example.

An integrated corner-reflector antennas has been designed, fabricated, and measured at millimeter-wave frequencies. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane, and suspended in a longitudinal cavity etched in a silicon wafer. A novel traveling wave antenna design, the modified-bend antenna, with an antenna length of 1.2 lambda and spacing 0.96 lambda from the apex, results in a wideband input impedance centered at 140 Ohm and low cross-polarization levels. Measurements at 180-270 GHz show a well-defined pattern with low sidelobe levels, and a main-beam efficiency of 93 percent and 83 percent at 180 and 222 GHz, respectively. The monolithic approach allows the integration of a matching network and a Schottky-diode or SIS detector at the base of the antenna to yield a low-noise monolithic millimeter-wave receiver.

An integrated corner-cube antenna has been designed, fabricated, and measured at 119 microns. The structure consists of a traveling-wave antenna integrated on a 1-micron dielectric membrane and suspended in a longitudinal cavity etched in silicon wafers. The patterns at 119 microns agree well with millimeter-wave patterns measured on a scaled antenna at 222 GHz. A directivity of 18 +/- 0.5 dB is calculated from E- and H-plane measurements. This work demonstrates that high-efficiency integrated corner-cube antennas are easily scalable to terahertz frequencies and could be used for radio-astronomical and plasma-diagnostic applications.

A dual-polarized two-dimensional imaging array was designed for millimeter-wave applications. The dual-polarized design consists of two dipoles perpendicular to each other and suspended on the same membrane inside a pyramidal cavity etched in silicon. The dual-polarized antenna is fully monolithic with room available for processing electronics. The IF or video signals are taken out through a novel bias and feeding structure. The measured polarization isolation is better than 20 dB at 92 GHz, and the orthogonal channels show identical far-field patterns. The antenna is well suited for millimeter-wave polarimetric synthetic-aperture radars (SARs) and high-efficiency balanced-mixer receivers.

A high-gain monolithic millimeter-wave antenna has been designed, fabricated, and tested at 222 GHz. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane and suspended in a longitudinal cavity etched in a silicon wafer. A new traveling-wave antenna design yields a wideband input impedance and a low cross-polarization component in the E- and quasi-H-plane patterns. A directivity of 17.7 dB and a main-beam efficiency of 88.5 percent are calculated from the 222-GHz pattern measurements. The integrated corner-reflector antenna is well suited for millimeter- and submillimeter-wave imaging applications in large f-number systems.