Search

Your search keyword '"Qasrawi A"' showing total 2,050 results
Start Over Author "Qasrawi A"
2,050 results on '"Qasrawi A"'

204. RAB27B Drives a Cancer Stem Cell Phenotype in NSCLC Cells Through Enhanced Extracellular Vesicle Secretion

Author

Kayleah M. Meneses, Prita Pandya, Jennifer A. Lindemann, Dania S. Al-Qasrawi, Ryan A. Argo, Celeste M. Weems, Danielle J. Beetler, Geraldine V. Vijay, Irene K. Yan, Joy Wolfram, Tushar Patel, and Verline Justilien

Abstract

Cancer stem cells (CSC) within non–small cell lung carcinoma (NSCLC) tumors drive NSCLC progression, metastasis, relapse, and intrinsic chemoresistance. Understanding the mechanisms that support the malignant phenotypes of NSCLC CSCs may provide insights for improved NSCLC therapeutic interventions. Here, we report that expression of RAB27B, a small GTPase, is significantly upregulated in NSCLC CSCs when compared with bulk cancer cells (BCC). Short hairpin RNA–mediated knockdown of RAB27B leads to a loss of stem cell marker gene expression and reduced NSCLC spheroid growth, clonal expansion, transformed growth, invasion, and tumorigenicity. We find that NSCLC CSCs secrete significantly more extracellular vesicles (EV) than BCCs, and that this is RAB27B-dependent. Furthermore, CSC-derived EVs, but not BCC-derived EVs, induce spheroid growth, clonal expansion, and invasion in BCCs. Finally, RAB27B is required for CSC-derived EV-induced stemness in BCCs. Taken together, our results indicate that RAB27B is required for maintenance of a highly tumorigenic, cancer-initiating, invasive stem-like cell population in NSCLC and RAB27B is involved in propagating EV-mediated communication from NSCLC CSCs to BCCs. Our findings further suggest that inhibition of RAB27B-dependent EV secretion may be a potential therapeutic strategy for NSCLC. Significance: Expression of RAB27B in CSCs leads to elevated levels of EVs that mediate communication between CSCs and BCCs that maintains a stem-like phenotype in NSCLC cells.

Published
2023
Full Text
View/download PDF

205. Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

Author

Latifah Hamad Khalid Alfhaid, A. F. Qasrawi, and Sabah E. AlGarni

Subjects
InSe/Sb2Te3, dielectric, band offset, Drude-Lorentz model, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique. The structural, optical, dielectric and photoelectric properties of InSe/Sb2Te3 heterojunctions are explored by X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The structural analyses revealed the preferred growth of polycrystalline hexagonal Sb2Te3 onto amorphous InSe as a major phase. Optically, the coating of Sb2Te3 onto InSe enhanced the light absorbability of InSe by more than 18 times, redshifts the energy band gap, increased the dielectric constant by ~5 times and increased the optical conductivity by 35 times in the NIR range of light. A conduction and valance band offsets of 0.40 and 0.68 eV are determined for the InSe/Sb2Te3 heterojunction devices. In addition, the Drude-Lorentz fittings of the optical conductivity indicated a remarkable increase in the plasmon frequency values upon depositing of Sb2Te3 onto InSe. The illumination intensity and time dependent photocurrent measurements resulted in an enhancement in the photocurrent values by one order of magnitude. The response time of the devices is sufficiently short to nominate the InSe/Sb2Te3 heterojunction devices as fast responding NIR sensors suitable for optoelectronic applications.

Published
2021
Full Text
View/download PDF

220. Induced crystallization and enhanced light absorption and optical conduction in WO3 films via pulsed laser welding technique

Author

Latifah Hamad Khalid Alfhaid, A. F. Qasrawi, İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
WO3 Thin Films, Enhanced Absorption, Induced Crystallization, Electrical and Electronic Engineering, Pulsed Laser Welding, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Abstract

Herein amorphous WO3 thin films prepared by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar are treated via pulsed laser welding technique (PLW) in an argon atmosphere. An induced crystallization process within one second for a spot of diameter of 2 mm is achieved via this technique. The crystalline films exhibited hexagonal structure and showed cuboid grains of dimensions of (length × width) 4.6 × 1.1 (μm)2. In addition, the PLW treated tungsten oxide thin films exhibited enhanced light absorbability reaching 90 times at 3.09 eV. Moreover in addition to the existing indirect energy band gap (3.50 eV) of WO3 films, the PLW treatment resulted in formation of another direct energy band gap of value of 1.92 eV. The pulsed laser welding of the WO3 films increased the optical conductivity of the films by 66 times and shifted the plasmon frequency from 0.19 to 6.99 GHz. The free charge carrier density also increased by two orders of magnitude. On the other hand, the impedance spectroscopy studies have shown domination of negative capacitance effect in samples treated with PLW technique. The conversion of the structure of the films from amorphous to polycrystalline that is associated with enhanced light absorption and improved optical conduction which is achieved within 41 s for a large area of 1.25 cm2 of the films is accounted as a smart new approach for improving the physical properties of thin films. WOS:000957590800001 Q2

Published
2023
Full Text
View/download PDF

221. Formation and characterization of MgSe alloys by pulsed laser welding technique

Author

Almotiri, R. A., Qasrawi, Atef Fayez, İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
Layered Structure, 5G Technology, MgSe Alloys, Microwave, Pulsed Laser Welding
Abstract

Herein, MgSe alloys with different compositions are fabricated using laser welding techniques within a couple of minutes in an argon atmosphere. The optimum laser welding parameters, which reveal the correct compositional ratios, are determined by varying arc voltage, pulse width, welding frequency, and laser beam diameter. The structure of the MgSe alloy is monoclinic. Additionally, scanning electron microscopy studies have shown that MgSe alloys are least porous and have a layered structure. The electrical resistance of the welded alloys depends on the Mg content in the samples. Measurements from impedance spectroscopy have shown that the alloys can function as band filters, displaying cutoff frequency values of ≈16 GHz for AC signals propagating at a driving frequency of 1.0 GHz with an amplitude of 0.10 V. The properties of the MgSe alloys make them attractive for use in 5G/6G technology applications as band filters. King Abdulaziz University

Published
2023

222. Enhancement of the electrical properties of Au/MgSe/Au microwave resonators via pulsed laser welding of MgSe and Au nanosheets

Author

R. A. Almotiri, A. F. Qasrawi, B. S. Agha, İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
4G Technology, General Materials Science, General Chemistry, Pulsed Laser Welding, Microwave, MgAuSe Alloy, MgSe Nanosheets
Abstract

Herein, stacked nanosheets of Au (50 nm) and MgSe (100 nm) are fabricated by the thermal evaporation technique and welded by pulsed lasers of wavelengths of 1064 nm within few seconds. Au/MgSe (AMA) and welded Au/MgSe (PLW) interfaces are coated with another Au point contact and employed as microwave resonators. It is observed that both AMA and PLW devices are of amorphous structure. The laser welding technique resulted in formation clusters composed of very dense grains of Mg1.37AuSe1.18 and other clusters composed of Mg1.16Se. In addition, the impedance spectroscopy measurements on these nano-thick devices have shown their novel ability to perform as negative capacitance sources and as band-stop filters. The pulsed laser welding of these microwave resonators increased their ac conductivities by increasing the hopping sites in the devices. The density of localized states near the Fermi level is increased by ~ 21% and the scattering time constant between hopping sites is shortened via laser welding. As microwave resonators, the pulsed laser welding process shifted the notch frequency from 1.0 to 2.16 GHz, improved the negativity of the capacitance, increased the return loss values and lowered the voltage standing wave ratios to 1.0. The features of the AMA microwave resonators before and after the pulsed laser welding nominate them for use as band-stop filters and as negative capacitance sources. WOS:000958325900002 Q2

Published
2023

223. Growth and characterization of lanthanum germanide thin films by the thermal evaporation technique

Author

Alkhamisi, Manal M., Qasrawi, Atef Fayez, Khanfar, Hazem K., İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
Terahertz, Orthorhombic, La6Ge Thin Films, Thermal Evaporation Technique
Abstract

Lanthanum germanide (La6Ge) thin films are successfully fabricated using the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The resulting films display an orthorhombic structure, characterized by lattice parameters of a = 8.725 Å, b = 8.063 Å, and c = 5.569 Å. Optical analysis of the La6Ge thin films reveal their high transparency, with an energy bandgap of 3.75±0.04 eV. The bandgap exhibits indirect allowed transitions and featured energy band tails with widths measuring (1.64±0.14) eV. In addition, dielectric dispersion analyses indicate the presence of two dominant dielectric resonance peaks centered at 3.15 and 2.08 eV. Moreover, the La6Ge films demonstrate a terahertz (THz) cutoff frequency of 1.0 THz when illuminated with infrared and visible light. This cutoff frequency increases to 45.6 THz in the ultraviolet range. Furthermore, by utilizing the Drude–Lorentz method, the investigation of optical conductivity parameters reveals that the lanthanum germanide optical filters can achieve free hole density and drift mobility values of 14.44 cm2 V−1 s−1 and 2.8×1018 cm−3, respectively, under infrared light irradiation. The outstanding optical and dielectric properties exhibited by the La6Ge thin films make them excellent candidates for highly transparent optical filters suitable for terahertz technology. King Abdulaziz University

Published
2023

224. Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources

Author

Qasrawi, Atef Fayez, Khanfar, Hazem K., İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
X-ray, Ag/Ge/SeO2/Ag, Negative Conductance, MOS, Negative Capacitance
Abstract

Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators. WOS:000954282900001 Q4

Published
2023

225. Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Author

Manal M Alkhamisi, A F Qasrawi, Hazem K Khanfar, İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
Pb/WO3, 5G Technology, Optical Filters, Terahertz, Condensed Matter Physics, Microwave, Mathematical Physics, Atomic and Molecular Physics, and Optics
Abstract

Herein amorphous tungsten oxide thin films of thicknesses of 300 nm are coated onto semitransparent Pb films (100 nm) by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. Optical investigations in these films have shown that Pb nanosheets enhances the light absorbability in the visible and infrared ranges of light without significant change in the energy band gap value. In addition deep analyses of the optical conductivity and terahertz cutoff frequency spectra of the Pb/WO3 optical filters revealed that the cutoff frequency value in the visible range of light is invariant with light signal energy indicating the possibly of filtering none-monochromatic light signals. On the other hand imposing an ac signal between the terminals of Pb/WO3/Au devices has proofed the ability of the device to perform as low pass and as band stop filters workable in the microwave frequency domain. The microwave cutoff frequency for this device reached ∼9 GHz nominating it for use in 5 G mobile technology. The current study showed that coating of tungsten oxide onto semitransparent Pb substrate and coverage small area of the top contact with Au can allow functioning the device as gigahertz/terahertz band filters suitable for communication technology.

Published
2023

235. Preparation and Characterization of CdO/In6Se7 Thin Film Transistors

Author

Sabah E. AlGarni and A. F. Qasrawi

Subjects
CdO/InSe, annealing, thin film transistor, band filter, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

Abstract In this study, the design and characterization of CdO/InSe thin film transistors (TFT) that are grown onto Au substrates are investigated. The devices are also subjected to a vacuum annealing process at 300 oC to enhance the structure and electrical performance. It was observed that the growth of polycrystalline monoclinic In6Se7 phase of InSe is preferred at this annealing temperature when coated onto Au/CdO substrates. Electrically, noisy negative capacitance effect accompanied with resonance-antiresonance phenomena is observed in the capacitance spectra of the as prepared TFT devices. The annealing of the TFT devices reduced the noise in the capacitance, conductance, impedance, and reflection coefficient and return loss spectral responses. The heat treated TFT devices displayed low bandpass, high bandpass and bandstop filter characteristics in the studied frequency domain (0.01-1.80 GHz) indicating the applicability of these devices as radio wave-microwave resonators.

Published
2020
Full Text
View/download PDF

236. Optical Dynamics at the Au/ZnPc Interfaces

Author

A. F. Qasrawi and Hadeel M. Zyoud

Subjects
Au/ZnPc, X-ray diffraction, optical absorption, band gap, dielectric dispersion, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

In this work, the optical dynamics and the structural properties of the zinc phthalocyanine which are coated onto 150 nm thick Au substrates are studied by the X-ray diffraction and optical spectrophotometry techniques. The Au/ZnPc interfaces appears to be strongly affected by the large lattice mismatches at the interface. It is observed that the coating ZnPc onto Au substrates increases the light absorbability by 4.7 and 128.2 times in the visible and infrared regions of light, respectively. Au substrates activated the free carrier absorption mechanism in the ZnPc thin films in the infrared range of light. In addition, the transparent Au substrates forced narrowing the energy band gap in both of the Q and B bands. It also increased the dielectric constant value by ~3.5 times in the IR range. The enhancements in the optical properties of ZnPc that resulted from the thin Au substrates make the ZnPc more suitable for optoelectronic, nonlinear optical applications and for electromagnetic energy storage in the infrared range of light.

Published
2020
Full Text
View/download PDF

237. Indium slabs induced structural phase transitions and their effects on the electrical and optical properties of stacked layers of the thermally annealed Cu2O thin films

Author

Sabah E. AlGarni and A.F. Qasrawi

Subjects
Cu2O/In/Cu2O, Annealing, Phase transitions, Electronic resistivity, Optical transitions, Physics, QC1-999
Abstract

In this work, the effects of the structural evolutions caused by the insertion of indium slabs (100 nm) between layers of cupric oxide on the electrical and optical properties are investigated. The stacked layers of Cu2O/Cu2O (CC) which are thermally annealed at 500 °C in a vacuum media is observed to comprise both of the CuO (45.9%) and Cu2O (54.1%) phases in its structure. The major structural phase of CuO and Cu2O are monoclinic and orthorhombic, respectively. Insertion of indium slabs which is followed by thermal annealing reduced the content of CuO to 29.2% and enriched the content of Cu2O to 70.8%. The CC samples exhibited structural phase transitions from monoclinic CuO to hexagonal Cu2O in the presence of indium and under thermal annealing. The insertion of indium slabs in the samples increased the crystallite size and enhanced the optical transmittance. It also decreased the microstrain, the defect density and the electrical resistivity. The donor states are shifted deeper below the conduction band edge. The nature of optical transitions also changed from direct allowed to direct forbidden with a decrease in the energy band gap values from 2.05 to 0.85 eV upon indium slabs insertion followed by annealing process.

Published
2020
Full Text
View/download PDF

238. Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors

Author

Najla M. Khusayfan, A.F. Qasrawi, and Hazem K. Khanfar

Subjects
Physics, QC1-999
Abstract

In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal κ-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 °C in a vacuum media. The coating of the κ-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal–oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01–1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies. Keywords: k-In2Se3, Orthorhombic indium selenide, Double Schottky, Impedance, MOSFET

Published
2018
Full Text
View/download PDF

239. Pt/PbSe optoelectronic receivers designed for 6G and terahertz communication technologies

Author

Manal M. Alkhamisi, A. F. Qasrawi, Hazem K. Khanfar, Sabah E. Algarni, İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, and Atef Fayez Qasrawi / 6603962677

Subjects
6G Technology, PbSe, Electrical and Electronic Engineering, Microwave, Negative Capacitance, Atomic and Molecular Physics, and Optics, Thermal Evaporation, Electronic, Optical and Magnetic Materials
Abstract

Herein PbSe thin films are coated onto glass and semitransparent platinum substrates. The films which are treated as optoelectronic signal receivers are deposited by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The structural investigations have shown that (glass, Pt)/PbSe films are of polycrystalline nature. Optically, Pt substrates increased the transparency and reflectivity of PbSe films. The energy band gap of PbSe is also increased by 0.12 eV when films are coated onto Pt substrates. In addition the dielectric constant also increased as a result of strong interaction between Pt plasmonic particles and lead selenide. On the other hand, fitting of the imaginary part of the dielectric constant using Drude–Lorentz model has shown that coating of PbSe onto semitransparent Pt substrates increased the drift mobility of lead selenide by four times. Pt substrates resulted in a decrease in the density of free charge carriers and increases the scattering time constant at femtosecond levels. (Glass, Pt)/PbSe optoelectronic receivers displayed plasmon frequencies up to ~ 13 GHz and showed terahertz cutoff frequency of ~ 1.0 THz. In addition, allowing the propagation of an ac signal of low amplitude in the Pt/PbSe/Pt receivers has shown that the devices exhibit wide range of resistance tunability. The microwave cutoff frequency also reached 14 GHz. Both of the optical and electrical measurements proved the suitability of the Pt/PbSe devices for 6G and terahertz communication technologies. WOS:000906194600002 Q2

Published
2022
Full Text
View/download PDF

240. G Protein-Coupled Receptor-Dependent Development of Human Frontal Cortex

Author

Piao, Xianhua, Hill, R. Sean, Bodell, Adria, Chang, Bernard S., Basel-Vanagaite, Lina, Straussberg, Rachel, Dobyns, William B., Qasrawi, Bassam, Winter, Robin M., Innes, A. Micheil, Voit, Thomas, Ross, M. Elizabeth, Michaud, Jacques L., Déscarie, Jean-Claude, Barkovich, A. James, and Walsh, Christopher A.

Published
2004

248. Worldwide trends in body-mass index, underweight, overweight, and obesity from 1975 to 2016: a pooled analysis of 2416 population-based measurement studies in 128·9 million children, adolescents, and adults

Author

Abarca-Gómez, Leandra, Abdeen, Ziad A, Hamid, Zargar Abdul, Abu-Rmeileh, Niveen M, Acosta-Cazares, Benjamin, Acuin, Cecilia, Adams, Robert J, Aekplakorn, Wichai, Afsana, Kaosar, Aguilar-Salinas, Carlos A, Agyemang, Charles, Ahmadvand, Alireza, Ahrens, Wolfgang, Ajlouni, Kamel, Akhtaeva, Nazgul, Al-Hazzaa, Hazzaa M, Al-Othman, Amani Rashed, Al-Raddadi, Rajaa, Al Buhairan, Fadia, Al Dhukair, Shahla, Ali, Mohamed M, Ali, Osman, Alkerwi, Ala'a, Alvarez-Pedrerol, Mar, Aly, Eman, Amarapurkar, Deepak N, Amouyel, Philippe, Amuzu, Antoinette, Andersen, Lars Bo, Anderssen, Sigmund A, Andrade, Dolores S, Ängquist, Lars H, Anjana, Ranjit Mohan, Aounallah-Skhiri, Hajer, Araújo, Joana, Ariansen, Inger, Aris, Tahir, Arlappa, Nimmathota, Arveiler, Dominique, Aryal, Krishna K, Aspelund, Thor, Assah, Felix K, Assunção, Maria Cecília F, Aung, May Soe, Avdicová, Mária, Azevedo, Ana, Azizi, Fereidoun, Babu, Bontha V, Bahijri, Suhad, Baker, Jennifer L, Balakrishna, Nagalla, Bamoshmoosh, Mohamed, Banach, Maciej, Bandosz, Piotr, Banegas, José R, Barbagallo, Carlo M, Barceló, Alberto, Barkat, Amina, Barros, Aluisio JD, Barros, Mauro VG, Bata, Iqbal, Batieha, Anwar M, Batista, Rosangela L, Batyrbek, Assembekov, Baur, Louise A, Beaglehole, Robert, Romdhane, Habiba Ben, Benedics, Judith, Benet, Mikhail, Bennett, James E, Bernabe-Ortiz, Antonio, Bernotiene, Gailute, Bettiol, Heloisa, Bhagyalaxmi, Aroor, Bharadwaj, Sumit, Bhargava, Santosh K, Bhatti, Zaid, Bhutta, Zulfiqar A, Bi, Hongsheng, Bi, Yufang, Biehl, Anna, Bikbov, Mukharram, Bista, Bihungum, Bjelica, Dusko J, Bjerregaard, Peter, Bjertness, Espen, Bjertness, Marius B, Björkelund, Cecilia, Blokstra, Anneke, Bo, Simona, Bobak, Martin, Boddy, Lynne M, Boehm, Bernhard O, Boeing, Heiner, Boggia, Jose G, Boissonnet, Carlos P, Bonaccio, Marialaura, Bongard, Vanina, Bovet, Pascal, Braeckevelt, Lien, Braeckman, Lutgart, Bragt, Marjolijn CE, Brajkovich, Imperia, Branca, Francesco, Breckenkamp, Juergen, Breda, João, Brenner, Hermann, Brewster, Lizzy M, Brian, Garry R, Brinduse, Lacramioara, Bruno, Graziella, Bueno-de-Mesquita, H B(as), Bugge, Anna, Buoncristiano, Marta, Burazeri, Genc, Burns, Con, de León, Antonio Cabrera, Cacciottolo, Joseph, Cai, Hui, Cama, Tilema, Cameron, Christine, Camolas, José, Can, Günay, Cândido, Ana Paula C, Capanzana, Mario, Capuano, Vincenzo, Cardoso, Viviane C, Carlsson, Axel C, Carvalho, Maria J, Casanueva, Felipe F, Casas, Juan-Pablo, Caserta, Carmelo A, Chamukuttan, Snehalatha, Chan, Angelique W, Chan, Queenie, Chaturvedi, Himanshu K, Chaturvedi, Nishi, Chen, Chien-Jen, Chen, Fangfang, Chen, Huashuai, Chen, Shuohua, Chen, Zhengming, Cheng, Ching-Yu, Chetrit, Angela, Chikova-Iscener, Ekaterina, Chiolero, Arnaud, Chiou, Shu-Ti, Chirita-Emandi, Adela, Chirlaque, María-Dolores, Cho, Belong, Cho, Yumi, Christensen, Kaare, Christofaro, Diego G, Chudek, Jerzy, Cifkova, Renata, Cinteza, Eliza, Claessens, Frank, Clays, Els, Concin, Hans, Confortin, Susana C, Cooper, Cyrus, Cooper, Rachel, Coppinger, Tara C, Costanzo, Simona, Cottel, Dominique, Cowell, Chris, Craig, Cora L, Crujeiras, Ana B, Cucu, Alexandra, D'Arrigo, Graziella, d'Orsi, Eleonora, Dallongeville, Jean, Damasceno, Albertino, Damsgaard, Camilla T, Danaei, Goodarz, Dankner, Rachel, Dantoft, Thomas M, Dastgiri, Saeed, Dauchet, Luc, Davletov, Kairat, De Backer, Guy, De Bacquer, Dirk, De Curtis, Amalia, de Gaetano, Giovanni, De Henauw, Stefaan, de Oliveira, Paula Duarte, De Ridder, Karin, De Smedt, Delphine, Deepa, Mohan, Deev, Alexander D, Dehghan, Abbas, Delisle, Hélène, Delpeuch, Francis, Deschamps, Valérie, Dhana, Klodian, Di Castelnuovo, Augusto F, Dias-da-Costa, Juvenal Soares, Diaz, Alejandro, Dika, Zivka, Djalalinia, Shirin, Do, Ha TP, Dobson, Annette J, Donati, Maria Benedetta, Donfrancesco, Chiara, Donoso, Silvana P, Döring, Angela, Dorobantu, Maria, Dorosty, Ahmad Reza, Doua, Kouamelan, Drygas, Wojciech, Duan, Jia Li, Duante, Charmaine, Duleva, Vesselka, Dulskiene, Virginija, Dzerve, Vilnis, Dziankowska-Zaborszczyk, Elzbieta, Egbagbe, Eruke E, Eggertsen, Robert, Eiben, Gabriele, Ekelund, Ulf, El Ati, Jalila, Elliott, Paul, Engle-Stone, Reina, Erasmus, Rajiv T, Erem, Cihangir, Eriksen, Louise, Eriksson, Johan G, la Peña, Jorge Escobedo-de, Evans, Alun, Faeh, David, Fall, Caroline H, Sant'Angelo, Victoria Farrugia, Farzadfar, Farshad, Felix-Redondo, Francisco J, Ferguson, Trevor S, Fernandes, Romulo A, Fernández-Bergés, Daniel, Ferrante, Daniel, Ferrari, Marika, Ferreccio, Catterina, Ferrieres, Jean, Finn, Joseph D, Fischer, Krista, Flores, Eric Monterubio, Föger, Bernhard, Foo, Leng Huat, Forslund, Ann-Sofie, Forsner, Maria, Fouad, Heba M, Francis, Damian K, Franco, Maria do Carmo, Franco, Oscar H, Frontera, Guillermo, Fuchs, Flavio D, Fuchs, Sandra C, Fujita, Yuki, Furusawa, Takuro, Gaciong, Zbigniew, Gafencu, Mihai, Galeone, Daniela, Galvano, Fabio, Garcia-de-la-Hera, Manoli, Gareta, Dickman, Garnett, Sarah P, Gaspoz, Jean-Michel, Gasull, Magda, Gates, Louise, Geiger, Harald, Geleijnse, Johanna M, Ghasemian, Anoosheh, Giampaoli, Simona, Gianfagna, Francesco, Gill, Tiffany K, Giovannelli, Jonathan, Giwercman, Aleksander, Godos, Justyna, Gogen, Sibel, Goldsmith, Rebecca A, Goltzman, David, Gonçalves, Helen, González-Leon, Margot, González-Rivas, Juan P, Gonzalez-Gross, Marcela, Gottrand, Frederic, Graça, Antonio Pedro, Graff-Iversen, Sidsel, Grafnetter, Dušan, Grajda, Aneta, Grammatikopoulou, Maria G, Gregor, Ronald D, Grodzicki, Tomasz, Grøntved, Anders, Grosso, Giuseppe, Gruden, Gabriella, Grujic, Vera, Gu, Dongfeng, Gualdi-Russo, Emanuela, Guallar-Castillón, Pilar, Guan, Ong Peng, Gudmundsson, Elias F, Gudnason, Vilmundur, Guerrero, Ramiro, Guessous, Idris, Guimaraes, Andre L, Gulliford, Martin C, Gunnlaugsdottir, Johanna, Gunter, Marc, Guo, Xiuhua, Guo, Yin, Gupta, Prakash C, Gupta, Rajeev, Gureje, Oye, Gurzkowska, Beata, Gutierrez, Laura, Gutzwiller, Felix, Hadaegh, Farzad, Hadjigeorgiou, Charalambos A, Si-Ramlee, Khairil, Halkjær, Jytte, Hambleton, Ian R, Hardy, Rebecca, Kumar, Rachakulla Hari, Hassapidou, Maria, Hata, Jun, Hayes, Alison J, He, Jiang, Heidinger-Felso, Regina, Heinen, Mirjam, Hendriks, Marleen Elisabeth, Henriques, Ana, Cadena, Leticia Hernandez, Herrala, Sauli, Herrera, Victor M, Herter-Aeberli, Isabelle, Heshmat, Ramin, Hihtaniemi, Ilpo Tapani, Ho, Sai Yin, Ho, Suzanne C, Hobbs, Michael, Hofman, Albert, Hopman, Wilma M, Horimoto, Andrea RVR, Hormiga, Claudia M, Horta, Bernardo L, Houti, Leila, Howitt, Christina, Htay, Thein Thein, Htet, Aung Soe, Htike, Maung Maung Than, Hu, Yonghua, Huerta, José María, Petrescu, Constanta Huidumac, Huisman, Martijn, Husseini, Abdullatif, Huu, Chinh Nguyen, Huybrechts, Inge, Hwalla, Nahla, Hyska, Jolanda, Iacoviello, Licia, Iannone, Anna G, Ibarluzea, Jesús M, Ibrahim, Mohsen M, Ikeda, Nayu, Ikram, M Arfan, Irazola, Vilma E, Islam, Muhammad, Ismail, Aziz al-Safi, Ivkovic, Vanja, Iwasaki, Masanori, Jackson, Rod T, Jacobs, Jeremy M, Jaddou, Hashem, Jafar, Tazeen, Jamil, Kazi M, Jamrozik, Konrad, Janszky, Imre, Jarani, Juel, Jasienska, Grazyna, Jelakovic, Ana, Jelakovic, Bojan, Jennings, Garry, Jeong, Seung-Lyeal, Jiang, Chao Qiang, Jiménez-Acosta, Santa Magaly, Joffres, Michel, Johansson, Mattias, Jonas, Jost B, Jørgensen, Torben, Joshi, Pradeep, Jovic, Dragana P, Józwiak, Jacek, Juolevi, Anne, Jurak, Gregor, Jureša, Vesna, Kaaks, Rudolf, Kafatos, Anthony, Kajantie, Eero O, Kalter-Leibovici, Ofra, Kamaruddin, Nor Azmi, Kapantais, Efthymios, Karki, Khem B, Kasaeian, Amir, Katz, Joanne, Kauhanen, Jussi, Kaur, Prabhdeep, Kavousi, Maryam, Kazakbaeva, Gyulli, Keil, Ulrich, Boker, Lital Keinan, Keinänen-Kiukaanniemi, Sirkka, Kelishadi, Roya, Kelleher, Cecily, Kemper, Han CG, Kengne, Andre P, Kerimkulova, Alina, Kersting, Mathilde, Key, Timothy, Khader, Yousef Saleh, Khalili, Davood, Khang, Young-Ho, Khateeb, Mohammad, Khaw, Kay-Tee, Khouw, Ilse MSL, Kiechl-Kohlendorfer, Ursula, Kiechl, Stefan, Killewo, Japhet, Kim, Jeongseon, Kim, Yeon-Yong, Klimont, Jeannette, Klumbiene, Jurate, Knoflach, Michael, Koirala, Bhawesh, Kolle, Elin, Kolsteren, Patrick, Korrovits, Paul, Kos, Jelena, Koskinen, Seppo, Kouda, Katsuyasu, Kovacs, Viktoria A, Kowlessur, Sudhir, Koziel, Slawomir, Kratzer, Wolfgang, Kriemler, Susi, Kristensen, Peter Lund, Krokstad, Steinar, Kromhout, Daan, Kruger, Herculina S, Kubinova, Ruzena, Kuciene, Renata, Kuh, Diana, Kujala, Urho M, Kulaga, Zbigniew, Kumar, R Krishna, Kunešová, Marie, Kurjata, Pawel, Kusuma, Yadlapalli S, Kuulasmaa, Kari, Kyobutungi, Catherine, La, Quang Ngoc, Laamiri, Fatima Zahra, Laatikainen, Tiina, Lachat, Carl, Laid, Youcef, Lam, Tai Hing, Landrove, Orlando, Lanska, Vera, Lappas, Georg, Larijani, Bagher, Laugsand, Lars E, Lauria, Laura, Laxmaiah, Avula, Bao, Khanh Le Nguyen, Le, Tuyen D, Lebanan, May Antonnette O, Leclercq, Catherine, Lee, Jeannette, Lee, Jeonghee, Lehtimäki, Terho, León-Muñoz, Luz M, Levitt, Naomi S, Li, Yanping, Lilly, Christa L, Lim, Wei-Yen, Lima-Costa, M Fernanda, Lin, Hsien-Ho, Lin, Xu, Lind, Lars, Linneberg, Allan, Lissner, Lauren, Litwin, Mieczyslaw, Liu, Jing, Loit, Helle-Mai, Lopes, Luis, Lorbeer, Roberto, Lotufo, Paulo A, Lozano, José Eugenio, Luksiene, Dalia, Lundqvist, Annamari, Lunet, Nuno, Lytsy, Per, Ma, Guansheng, Ma, Jun, Machado-Coelho, George LL, Machado-Rodrigues, Aristides M, Machi, Suka, Maggi, Stefania, Magliano, Dianna J, Magriplis, Emmanuella, Mahaletchumy, Alagappan, Maire, Bernard, Majer, Marjeta, Makdisse, Marcia, Malekzadeh, Reza, Malhotra, Rahul, Rao, Kodavanti Mallikharjuna, Malyutina, Sofia, Manios, Yannis, Mann, Jim I, Manzato, Enzo, Margozzini, Paula, Markaki, Anastasia, Markey, Oonagh, Marques, Larissa P, Marques-Vidal, Pedro, Marrugat, Jaume, Martin-Prevel, Yves, Martin, Rosemarie, Martorell, Reynaldo, Martos, Eva, Marventano, Stefano, Masoodi, Shariq R, Mathiesen, Ellisiv B, Matijasevich, Alicia, Matsha, Tandi E, Mazur, Artur, Mbanya, Jean Claude N, McFarlane, Shelly R, McGarvey, Stephen T, McKee, Martin, McLachlan, Stela, McLean, Rachael M, McLean, Scott B, McNulty, Breige A, Yusof, Safiah Md, Mediene-Benchekor, Sounnia, Medzioniene, Jurate, Meirhaeghe, Aline, Meisfjord, Jørgen, Meisinger, Christa, Menezes, Ana Maria B, Menon, Geetha R, Mensink, Gert BM, Meshram, Indrapal I, Metspalu, Andres, Meyer, Haakon E, Mi, Jie, Michaelsen, Kim F, Michels, Nathalie, Mikkel, Kairit, Miller, Jody C, Minderico, Cláudia S, Miquel, Juan Francisco, Miranda, J Jaime, Mirkopoulou, Daphne, Mirrakhimov, Erkin, Mišigoj-Durakovic, Marjeta, Mistretta, Antonio, Mocanu, Veronica, Modesti, Pietro A, Mohamed, Mostafa K, Mohammad, Kazem, Mohammadifard, Noushin, Mohan, Viswanathan, Mohanna, Salim, Yusoff, Muhammad Fadhli Mohd, Molbo, Drude, Møllehave, Line T, Møller, Niels C, Molnár, Dénes, Momenan, Amirabbas, Mondo, Charles K, Monterrubio, Eric A, Monyeki, Kotsedi Daniel K, Moon, Jin Soo, Moreira, Leila B, Morejon, Alain, Moreno, Luis A, Morgan, Karen, Mortensen, Erik Lykke, Moschonis, George, Mossakowska, Malgorzata, Mostafa, Aya, Mota, Jorge, Mota-Pinto, Anabela, Motlagh, Mohammad Esmaeel, Motta, Jorge, Mu, Thet Thet, Muc, Magdalena, Muiesan, Maria Lorenza, Müller-Nurasyid, Martina, Murphy, Neil, Mursu, Jaakko, Murtagh, Elaine M, Musil, Vera, Nabipour, Iraj, Nagel, Gabriele, Naidu, Balkish M, Nakamura, Harunobu, Námešná, Jana, Nang, Ei Ei K, Nangia, Vinay B, Nankap, Martin, Narake, Sameer, Nardone, Paola, Navarrete-Muñoz, Eva Maria, Neal, William A, Nenko, Ilona, Neovius, Martin, Nervi, Flavio, Nguyen, Chung T, Nguyen, Nguyen D, Nguyen, Quang Ngoc, Nieto-Martínez, Ramfis E, Ning, Guang, Ninomiya, Toshiharu, Nishtar, Sania, Noale, Marianna, Noboa, Oscar A, Norat, Teresa, Norie, Sawada, Noto, Davide, Nsour, Mohannad Al, O'Reilly, Dermot, Obreja, Galina, Oda, Eiji, Oehlers, Glenn, Oh, Kyungwon, Ohara, Kumiko, Olafsson, Örn, Olinto, Maria Teresa Anselmo, Oliveira, Isabel O, Oltarzewski, Maciej, Omar, Mohd Azahadi, Onat, Altan, Ong, Sok King, Ono, Lariane M, Ordunez, Pedro, Ornelas, Rui, Ortiz, Ana P, Osler, Merete, Osmond, Clive, Ostojic, Sergej M, Ostovar, Afshin, Otero, Johanna A, Overvad, Kim, Owusu-Dabo, Ellis, Paccaud, Fred Michel, Padez, Cristina, Pahomova, Elena, Pajak, Andrzej, Palli, Domenico, Palloni, Alberto, Palmieri, Luigi, Pan, Wen-Harn, Panda-Jonas, Songhomitra, Pandey, Arvind, Panza, Francesco, Papandreou, Dimitrios, Park, Soon-Woo, Parnell, Winsome R, Parsaeian, Mahboubeh, Pascanu, Ionela M, Patel, Nikhil D, Pecin, Ivan, Pednekar, Mangesh S, Peer, Nasheeta, Peeters, Petra H, Peixoto, Sergio Viana, Peltonen, Markku, Pereira, Alexandre C, Perez-Farinos, Napoleon, Pérez, Cynthia M, Peters, Annette, Petkeviciene, Janina, Petrauskiene, Ausra, Peykari, Niloofar, Pham, Son Thai, Pierannunzio, Daniela, Pigeot, Iris, Pikhart, Hynek, Pilav, Aida, Pilotto, Lorenza, Pistelli, Francesco, Pitakaka, Freda, Piwonska, Aleksandra, Plans-Rubió, Pedro, Poh, Bee Koon, Pohlabeln, Hermann, Pop, Raluca M, Popovic, Stevo R, Porta, Miquel, Portegies, Marileen LP, Posch, Georg, Poulimeneas, Dimitrios, Pouraram, Hamed, Pourshams, Akram, Poustchi, Hossein, Pradeepa, Rajendra, Prashant, Mathur, Price, Jacqueline F, Puder, Jardena J, Pudule, Iveta, Puiu, Maria, Punab, Margus, Qasrawi, Radwan F, Qorbani, Mostafa, Bao, Tran Quoc, Radic, Ivana, Radisauskas, Ricardas, Rahman, Mahfuzar, Rahman, Mahmudur, Raitakari, Olli, Raj, Manu, Rao, Sudha Ramachandra, Ramachandran, Ambady, Ramke, Jacqueline, Ramos, Elisabete, Ramos, Rafel, Rampal, Lekhraj, Rampal, Sanjay, Rascon-Pacheco, Ramon A, Redon, Josep, Reganit, Paul Ferdinand M, Ribas-Barba, Lourdes, Ribeiro, Robespierre, Riboli, Elio, Rigo, Fernando, de Wit, Tobias F Rinke, Rito, Ana, Ritti-Dias, Raphael M, Rivera, Juan A, Robinson, Sian M, Robitaille, Cynthia, Rodrigues, Daniela, Rodríguez-Artalejo, Fernando, del Cristo Rodriguez-Perez, María, Rodríguez-Villamizar, Laura A, Rojas-Martinez, Rosalba, Rojroongwasinkul, Nipa, Romaguera, Dora, Ronkainen, Kimmo, Rosengren, Annika, Rouse, Ian, Roy, Joel GR, Rubinstein, Adolfo, Rühli, Frank J, Ruiz-Betancourt, Blanca Sandra, Russo, Paola, Rutkowski, Marcin, Sabanayagam, Charumathi, Sachdev, Harshpal S, Saidi, Olfa, Salanave, Benoit, Martinez, Eduardo Salazar, Salmerón, Diego, Salomaa, Veikko, Salonen, Jukka T, Salvetti, Massimo, Sánchez-Abanto, Jose, Sandjaja, Sans, Susana, Marina, Loreto Santa, Santos, Diana A, Santos, Ina S, Santos, Osvaldo, dos Santos, Renata Nunes, Santos, Rute, Saramies, Jouko L, Sardinha, Luis B, Sarrafzadegan, Nizal, Saum, Kai-Uwe, Savva, Savvas, Savy, Mathilde, Scazufca, Marcia, Rosario, Angelika Schaffrath, Schargrodsky, Herman, Schienkiewitz, Anja, Schipf, Sabine, Schmidt, Carsten O, Schmidt, Ida Maria, Schultsz, Constance, Schutte, Aletta E, Sein, Aye Aye, Sen, Abhijit, Senbanjo, Idowu O, Sepanlou, Sadaf G, Serra-Majem, Luis, Shalnova, Svetlana A, Sharma, Sanjib K, Shaw, Jonathan E, Shibuya, Kenji, Shin, Dong Wook, Shin, Youchan, Shiri, Rahman, Siani, Alfonso, Siantar, Rosalynn, Sibai, Abla M, Silva, Antonio M, Silva, Diego Augusto Santos, Simon, Mary, Simons, Judith, Simons, Leon A, Sjöberg, Agneta, Sjöström, Michael, Skovbjerg, Sine, Slowikowska-Hilczer, Jolanta, Slusarczyk, Przemyslaw, Smeeth, Liam, Smith, Margaret C, Snijder, Marieke B, So, Hung-Kwan, Sobngwi, Eugène, Söderberg, Stefan, Soekatri, Moesijanti YE, Solfrizzi, Vincenzo, Sonestedt, Emily, Song, Yi, Sørensen, Thorkild IA, Soric, Maroje, Jérome, Charles Sossa, Soumare, Aicha, Spinelli, Angela, Spiroski, Igor, Staessen, Jan A, Stamm, Hanspeter, Starc, Gregor, Stathopoulou, Maria G, Staub, Kaspar, Stavreski, Bill, Steene-Johannessen, Jostein, Stehle, Peter, Stein, Aryeh D, Stergiou, George S, Stessman, Jochanan, Stieber, Jutta, Stöckl, Doris, Stocks, Tanja, Stokwiszewski, Jakub, Stratton, Gareth, Stronks, Karien, Strufaldi, Maria Wany, Suárez-Medina, Ramón, Sun, Chien-An, Sundström, Johan, Sung, Yn-Tz, Sunyer, Jordi, Suriyawongpaisal, Paibul, Swinburn, Boyd A, Sy, Rody G, Szponar, Lucjan, Tai, E Shyong, Tammesoo, Mari-Liis, Tamosiunas, Abdonas, Tan, Eng Joo, Tang, Xun, Tanser, Frank, Tao, Yong, Tarawneh, Mohammed Rasoul, Tarp, Jakob, Tarqui-Mamani, Carolina B, Tautu, Oana-Florentina, Braunerová, Radka Taxová, Taylor, Anne, Tchibindat, Félicité, Theobald, Holger, Theodoridis, Xenophon, Thijs, Lutgarde, Thuesen, Betina H, Tjonneland, Anne, Tolonen, Hanna K, Tolstrup, Janne S, Topbas, Murat, Topór-Madry, Roman, Tormo, María José, Tornaritis, Michael J, Torrent, Maties, Toselli, Stefania, Traissac, Pierre, Trichopoulos, Dimitrios, Trichopoulou, Antonia, Trinh, Oanh TH, Trivedi, Atul, Tshepo, Lechaba, Tsigga, Maria, Tsugane, Shoichiro, Tulloch-Reid, Marshall K, Tullu, Fikru, Tuomainen, Tomi-Pekka, Tuomilehto, Jaakko, Turley, Maria L, Tynelius, Per, Tzotzas, Themistoklis, Tzourio, Christophe, Ueda, Peter, Ugel, Eunice E, Ukoli, Flora AM, Ulmer, Hanno, Unal, Belgin, Uusitalo, Hannu MT, Valdivia, Gonzalo, Vale, Susana, Valvi, Damaskini, van der Schouw, Yvonne T, Van Herck, Koen, Van Minh, Hoang, van Rossem, Lenie, Van Schoor, Natasja M, van Valkengoed, Irene GM, Vanderschueren, Dirk, Vanuzzo, Diego, Vatten, Lars, Vega, Tomas, Veidebaum, Toomas, Velasquez-Melendez, Gustavo, Velika, Biruta, Veronesi, Giovanni, Verschuren, WM Monique, Victora, Cesar G, Viegi, Giovanni, Viet, Lucie, Viikari-Juntura, Eira, Vineis, Paolo, Vioque, Jesus, Virtanen, Jyrki K, Visvikis-Siest, Sophie, Viswanathan, Bharathi, Vlasoff, Tiina, Vollenweider, Peter, Völzke, Henry, Voutilainen, Sari, Vrijheid, Martine, Wade, Alisha N, Wagner, Aline, Waldhör, Thomas, Walton, Janette, Bebakar, Wan Mohamad Wan, Mohamud, Wan Nazaimoon Wan, Wanderley, Rildo S, Jr., Wang, Ming-Dong, Wang, Qian, Wang, Ya Xing, Wang, Ying-Wei, Wannamethee, S Goya, Wareham, Nicholas, Weber, Adelheid, Wedderkopp, Niels, Weerasekera, Deepa, Whincup, Peter H, Widhalm, Kurt, Widyahening, Indah S, Wiecek, Andrzej, Wijga, Alet H, Wilks, Rainford J, Willeit, Johann, Willeit, Peter, Wilsgaard, Tom, Wojtyniak, Bogdan, Wong-McClure, Roy A, Wong, Justin YY, Wong, Jyh Eiin, Wong, Tien Yin, Woo, Jean, Woodward, Mark, Wu, Frederick C, Wu, Jianfeng, Wu, Shouling, Xu, Haiquan, Xu, Liang, Yamborisut, Uruwan, Yan, Weili, Yang, Xiaoguang, Yardim, Nazan, Ye, Xingwang, Yiallouros, Panayiotis K, Yngve, Agneta, Yoshihara, Akihiro, You, Qi Sheng, Younger-Coleman, Novie O, Yusoff, Faudzi, Yusoff, Muhammad Fadhli M, Zaccagni, Luciana, Zafiropulos, Vassilis, Zainuddin, Ahmad A, Zambon, Sabina, Zampelas, Antonis, Zamrazilová, Hana, Zdrojewski, Tomasz, Zeng, Yi, Zhao, Dong, Zhao, Wenhua, Zheng, Wei, Zheng, Yingfeng, Zholdin, Bekbolat, Zhou, Maigeng, Zhu, Dan, Zhussupov, Baurzhan, Zimmermann, Esther, Cisneros, Julio Zuñiga, Bentham, James, Di Cesare, Mariachiara, Bilano, Ver, Bixby, Honor, Zhou, Bin, Stevens, Gretchen A, Riley, Leanne M, Taddei, Cristina, Hajifathalian, Kaveh, Lu, Yuan, Savin, Stefan, Cowan, Melanie J, Paciorek, Christopher J, Kengne, Andre Pascal, Zhu, Aubrianna, and Ezzati, Majid

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results