201. Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers.
- Author
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Greenhill, C., Chang, A. S., Zech, E. S., Clark, S., Balakrishnan, G., and Goldman, R. S.
- Subjects
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QUANTUM dots , *SCANNING transmission electron microscopy , *AUDITING standards , *ATOM-probe tomography , *INFRARED equipment , *QUANTUM rings - Abstract
We examine the influence of quantum dot (QD) morphology on the optical properties of two-dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional nanostructures. Using nanostructure sizes from scanning transmission electron microscopy and local Sb compositions from local-electrode atom-probe tomography as input into self-consistent Schrödinger–Poisson simulations based on 8 × 8 k·p theory, we compute confinement energies for QDs, circular arrangements of smaller QDs, termed QD-rings, and 2D layers on GaAs substrates. The computed confinement energies and the measured photoluminescence emission energies increase from QDs to QD-rings to 2D layers, enabling direct association of nanostructure morphologies with the optical properties of the GaSb/GaAs multilayers. This work opens up opportunities for tailoring near to far infrared optoelectronic devices by varying the QD morphology. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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