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773 results on '"Masuda, Atsushi"'

210. Balloon-assisted Catheterization Technique under Proximal Flow Control with Balloon Guiding Catheter in Endovascular Treatment of Cerebral Aneurysm

Author

Minami, Hiroaki, primary, Hanayama, Hiroaki, additional, Okada, Takashi, additional, Matsumoto, Hiroaki, additional, Sakurai, Yasuo, additional, Masuda, Atsushi, additional, Tominaga, Shogo, additional, Miyaji, Katsuya, additional, Yamaura, Ikuya, additional, Hirata, Yutaka, additional, and Yoshida, Yasuhisa, additional

Published
2017
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211. Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H2 system

Author

Umemoto, Hironobu, Ohara, Kentaro, Morita, Daisuke, Nozaki, Yoshitaka, Matsumura, Hideki, and Masuda, Atsushi

Subjects
Silicon -- Chemical properties, Hydrogen -- Chemical properties, Chemical vapor deposition -- Research, Physics
Abstract

The absolute densities of H atoms produced in catalytic chemical vapor deposition (Cat-CVD or hot-wire CVD) processes are investigated by using two-photon laser-induced fluorescence and vacuum ultraviolet absorption techniques. The results suggest that the radical densities in the gas phase strongly depend on the chamber wall conditions.

Published
2002

212. Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests

Author

Yamaguchi, Seira, Yamamoto, Chizuko, Ohdaira, Keisuke, Masuda, Atsushi, Yamaguchi, Seira, Yamamoto, Chizuko, Ohdaira, Keisuke, and Masuda, Atsushi

Abstract

This letter deals with the potential-induced degradation (PID) of silicon heterojunction(SHJ) photovoltaic (PV) modules. After rapid indoor PID tests applying a voltage of −1000 V at 85 ◦C, the modules exhibited a significant reduction in short-circuit current density (J_). On the other hand, the dark current density–voltage characteristics of the modules were intact after the PID tests, indicating that the reduction in J_ is attributed not to carrier recombination but to optical loss. A degraded module slightly recovered its performance loss upon applying a positive bias but complete recovery was not observed, showing that the PID of SHJ PV modules is not reversible. A module with an ionomer encapsulant showed high PID resistance, revealing that the degradation of SHJ PV modules can be prevented by the use of ionomer encapsulants.

Published
2016

213. Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations

Author

Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Yamaguchi, Seira, Masuda, Atsushi, and Ohdaira, Keisuke

Abstract

This paper deals with the dependence of the potential-induced degradation (PID) of flat, p-type mono-crystalline silicon solar cell modules on the surface orientation of solar cells. The investigated modules were fabricated from p-type mono-crystalline silicon cells with a (100) or (111) surface orientation using a module laminator. PID tests were performed by applying a voltage of −1000 V to shorted module interconnector ribbons with respect to an Al plate placed on the cover glass of the modules at 85 ◦C. A decrease in the parallel resistance of the (100)-oriented cell modules is more significant than that of the (111)-oriented cell modules. Hence, the performance of the (100)-oriented-cell modules drastically deteriorates, compared with that of the (111)-oriented-cell modules. This implies that (111)-oriented cells offer a higher PID resistance.

Published
2016

214. Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation

Author

Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Yamaguchi, Seira, Masuda, Atsushi, and Ohdaira, Keisuke

Abstract

This study addresses the potential-induced degradation (PID) of n-type single-crystalline silicon (sc-Si) photovoltaic (PV) modules with a rear-side emitter. The n-type rear-emitter module configurations were fabricated using n-type bifacial sc-Si solar cells by module lamination with the p+ emitter side down. After the PID tests applying -1000 V, the modules show a rapid decrease in the open-circuit voltage (Voc), followed by relatively slower reductions in the fill factor and the short-circuit current density (Jsc). Their dark current density-voltage (J-V) data and external quantum efficiencies (EQEs) indicate that the drop in Voc is caused by an increase in the saturation current density due to the enhanced surface recombination of minority carriers. In contrast, the modules exhibit slight degradation under +1000 V, which is characterized by only slight decreases in Voc and Jsc. The EQE measurement reveals that these decreases are also attributed to the enhanced surface recombination of minority carriers. This behavior is almost identical tothat of the polarization effect in n-type interdigitated back contact PV modules reported in a previous study. By comparing the PID resistance with that of other types of modules, the n-type rear-emitter PV modules are relatively resistant to PID. This may become an advantage of the n-type rear-emitter PV modules., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/15343

Published
2016

215. Progression of rapid potential-induced degradation of n-type single-crystalline silicon photovoltaic modules

Author

Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Yamaguchi, Seira, Masuda, Atsushi, and Ohdaira, Keisuke

Abstract

This study addresses the progression of potential-induced degradation (PID) of photovoltaic modules using n-type single-crystalline silicon cells. In a PID test in which a voltage of −1000 V was applied to the cells, the modules started to degrade within 10 s, and degradation saturated within 120 s, suggesting that PID is caused by positive charge accumulation in the front passivation films. We propose that these positive charges originate from positively charged K centers formed by extracting electrons from K centers, which explains the rapid degradation and its saturation behavior. We obtained some simulated and experimental results supporting this hypothesis., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/16131

Published
2016

231. Multi angle laser light scattering evaluation of field exposed thermoplastic photovoltaic encapsulant materials

Author

Kempe, Michael D., primary, Miller, David C., additional, Wohlgemuth, John H., additional, Kurtz, Sarah R., additional, Moseley, John M., additional, Nobles, Dylan L., additional, Stika, Katherine M., additional, Brun, Yefim, additional, Samuels, Sam L., additional, Shah, Qurat (Annie), additional, Tamizhmani, Govindasamy, additional, Sakurai, Keiichiro, additional, Inoue, Masanao, additional, Doi, Takuya, additional, Masuda, Atsushi, additional, and Vanderpan, Crystal E., additional

Published
2016
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234. Potential-induced degradation of Cu(In,Ga)Se_2 photovoltaic modules

Author

Yamaguchi, Seira, Jonai, Sachiko, Hara, Kohjiro, Komaki, Hironori, Shimizu-Kamikawa, Yukiko, Shibata, Hajime, Niki, Shigeru, Kawakami, Yuji, Masuda, Atsushi, Yamaguchi, Seira, Jonai, Sachiko, Hara, Kohjiro, Komaki, Hironori, Shimizu-Kamikawa, Yukiko, Shibata, Hajime, Niki, Shigeru, Kawakami, Yuji, and Masuda, Atsushi

Abstract

Potential-induced degradation (PID) of Cu(In,Ga)Se_2 (CIGS) photovoltaic (PV) modules fabricated from integrated submodules is investigated. PID tests were performed by applying a voltage of −1000 V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na^+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. A degraded module can recover from its performance losses by applying +1000 V to connected submodule interconnector ribbons from an Al plate placed on the test module.

Published
2015

235. Field testing of thermoplastic encapsulants in high‐temperature installations

Author

Kempe, Michael D., primary, Miller, David C., additional, Wohlgemuth, John H., additional, Kurtz, Sarah R., additional, Moseley, John M., additional, Shah, Qurat A., additional, Tamizhmani, Govindasamy, additional, Sakurai, Keiichiro, additional, Inoue, Masanao, additional, Doi, Takuya, additional, Masuda, Atsushi, additional, Samuels, Sam L., additional, and Vanderpan, Crystal E., additional

Published
2015
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236. Annual trends of indoor output measurement results from photovoltaic modules exposed outdoors in Tosu city, Japan

Author

Chiba, Yasuo, Ishii, Tetsuyuki, Sato, Ritsuko, Choi, Sungwoo, Akitomi, Minoru, and Masuda, Atsushi

Abstract

Annual trends of indoor output measurement (Pmax(stc)) results from photovoltaic modules exposed outdoors in Tosu city from 2012 to 2022 were investigated. The Pmax(stc)of mono-Si (E-1A), as conventional Si modules, was almost unchanged from 2012 to 2022; however, that of mono-Si (E-1B), as conventional Si modules, decreased after 2019. In the case of Si heterojunction modules, a moderate degradation rate is expected with prolonged exposure. In the case of passivated emitter and rear cell modules, it was found that characteristics due to light and elevated-temperature induced degradation were observed with good reproducibility in 2021 and 2022.

Published
2023
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243. Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Author

Mishina, Ken, primary, Ogishi, Atsufumi, additional, Ueno, Kiyoshi, additional, Jonai, Sachiko, additional, Ikeno, Norihiro, additional, Saruwatari, Tetsuya, additional, Hara, Kohjiro, additional, Ogura, Atsushi, additional, Yamazaki, Toshiharu, additional, Doi, Takuya, additional, Shinohara, Makoto, additional, and Masuda, Atsushi, additional

Published
2015
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